Conference
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2019 |
Ultralow Power Wireless-Fire-Alarm-System using a VO2-Based Metal-Insulator-Transition Device
Jimin Son International Conference on Sensing, Communication, and Networking (SECON) 2019, pp.1-2 |
1 |
원문
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Journal
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2014 |
Postfabrication Annealing Effects on Insulator-Metal Transitions in VO2 Thin-Film Devices
Servin Rathi ACS Applied Materials & Interfaces, v.6, no.22, pp.19718-19725 |
21 |
원문
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Journal
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2013 |
Negative-Differential-Resistance-Switching Si-Transistor Operated by Power Pulse and Identity of Zener Breakdown
Hyun-Tak Kim Applied Physics Letters, v.103, no.17, pp.1-3 |
2 |
원문
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Conference
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2013 |
Metal-Insulator Transition Mechanism and Sensors Using Mott Insulator VO2
Hyun-Tak Kim NATO Advanced Research Workshop on Nanotechnology in the Security Systems 2013, v.NATO SPC C, pp.205-214 |
0 |
원문
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Journal
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2012 |
Evolution of local work function in epitaxial VO 2 thin films spanning the metal-insulator transition
손아름 Applied Physics Letters, v.101, no.19, pp.1-3 |
33 |
원문
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Journal
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2012 |
Photo-Assisted Bistable Switching Using Mott Transition in Two-Terminal VO2 Device
Seo Giwan Applied Physics Letters, v.100, no.1, pp.1-3 |
57 |
원문
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Journal
|
2011 |
Voltage-Pulse-Induced Switching Dynamics in $ \hbox{VO}_{2}$ Thin-Film Devices on Silicon
Seo Giwan IEEE Electron Device Letters, v.32, no.11, pp.1582-1584 |
36 |
원문
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Journal
|
2010 |
Voltage-induced Current-Jump Assisted by Infrared or Temperature in p-Type GaAs
Choi Sungyoul Journal of the Korean Physical Society, v.57, no.61, pp.1769-1772 |
0 |
원문
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Journal
|
2010 |
Linear Characteristics of a Metal-Insulator Transition Voltage and Oscillation Frequency in VO2 Devices
Kim Bongjun IEEE Electron Device Letters, v.31, no.11, pp.1314-1316 |
11 |
원문
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Journal
|
2010 |
VO2 Thin-Film Varistor Based on Metal-Insulator Transition
Kim Bongjun IEEE Electron Device Letters, v.31, no.1, pp.14-16 |
23 |
원문
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Journal
|
2009 |
Control of Current-Jump Induced by Voltage, Temperature, Light in P-Type GaAs: Programmable Critical Temperature Sensor
Choi Sungyoul Applied Physics Letters, v.95, no.23, pp.1-4 |
4 |
원문
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Journal
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2009 |
Vanadium Dioxide and Vanadium Sesquioxide Thin Films Fabricated on (0001) or (10 10)Al2O3 by Reactive RF-Magnetron Sputter Deposition and Subsequent Annealing Processes
Sun Jin Yun Japanese Journal of Applied Physics, v.48, no.4, pp.1-4 |
9 |
원문
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Journal
|
2008 |
Micro X-Ray Diffraction Study in VO2 Films - Separation between Metal-Insulator Transition and Structural Phase Transition
Kim Bongjun Physical Review B : Condensed Matter and Materials Physics, v.77, no.23, pp.1-18 |
126 |
원문
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Journal
|
2008 |
Metal-insulator Transition-induced Electrical Oscillation in Vanadium Dioxide Thin Film
Lee Yongwook Applied Physics Letters, v.92, no.16, pp.1-3 |
100 |
원문
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Journal
|
2008 |
Characteristics of Vanadium Dioxide Films Deposited by RF-magnetron Sputter Deposition Technique using V-metal Target
Sun Jin Yun Physica B : Condensed Matter, v.403, no.5-9, pp.1381-1383 |
20 |
원문
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Journal
|
2008 |
Preparation of V2O3 Thin Films by the Reduction of VO2 in a Very Low Pressure
Sun Jin Yun Electrochemical and Solid-State Letters, v.11, no.7, pp.H173-H175 |
6 |
원문
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Journal
|
2008 |
Vanadium Dioxide Films Deposited on Amorphous SiO2- and Al2O3-Coated Si Substrates by Reactive RF-Magnetron Sputter Deposition
Sun Jin Yun Japanese Journal of Applied Physics, v.47, no.4, pp.3067-3069 |
22 |
원문
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Journal
|
2008 |
Electrodynamics of the Vanadium Oxides VO2 and V2O3
M.M.Qazilbash Physical Review B : Condensed Matter and Materials Physics, v.77, no.11, pp.1-10 |
260 |
원문
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Journal
|
2007 |
Hole-driven MIT theory, Mott transition in VO2, MoBRiK device
Hyun-Tak Kim Physica C : Superconductivity, v.460-462, pp.1076-1078 |
21 |
원문
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Conference
|
2007 |
Synthesis of VO2 Nanowire and Observation of the Metal-Insulator Transition
Sungyoul Choi International Conference on Solid State Devices and Materials (SSDM) 2007, pp.1-2 |
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Conference
|
2007 |
Abrupt Metal Insulator Transition of TiO2 and AlxTi1-xOy Thin Films
Lim Jungwook International Conference on Solid State Devices and Materials (SSDM) 2007, pp.1-2 |
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Journal
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2007 |
Observation of abrupt first-order metal–insulator transition in Be-doped GaAs
Hyun-Tak Kim Journal of Crystal Growth, v.301-302, pp.252-255 |
4 |
원문
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Journal
|
2007 |
Temperature Dependence of Metal-Insulator Transition in Mn-Doped p-Type GaAs
Sungyoul Choi Journal of the Korean Physical Society, v.50, no.3, pp.844-847 |
4 |
원문
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Journal
|
2007 |
Analysis of the Surface Morphology and the Resistance of VO2 Thin Films on M-Plane Al2O3
Kim Bongjun Journal of the Korean Physical Society, v.50, no.3, pp.653-656 |
23 |
원문
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Journal
|
2007 |
Comparative Analysis of VO2 Thin Films Prepared on Sapphire and SiO2/Si Substrates by the Sol-Gel Process
Chae Byung Gyu Japanese Journal of Applied Physics, v.46, no.2, pp.738-743 |
30 |
원문
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Journal
|
2006 |
Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor
Kim Bong Jun Applied Physics Letters, v.90, no.2, pp.1-4 |
227 |
원문
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Journal
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2006 |
Monoclinic and Correlated Metal Phase in VO 2 as Evidence of the Mott Transition : Coherent Phonon Analysis
Hyun-Tak Kim Physical Review Letters, v.97, no.26, pp.1-4 |
313 |
원문
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Journal
|
2005 |
Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse
Chae Byung Gyu Physica B : Condensed Matter, v.369, no.1-4, pp.76-80 |
132 |
원문
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Journal
|
2005 |
Highly Oriented VO2 Thin Films Prepared by Sol-Gel Deposition
Chae Byung Gyu Electrochemical and Solid-State Letters, v.9, no.1, pp.C12-C14 |
104 |
원문
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