Journal
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2024 |
Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography
Sung Chihun IEEE Electron Device Letters, v.45, no.6, pp.1020-1023 |
1 |
원문
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Journal
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2021 |
Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors
Chihun Sung IEEE Electron Device Letters, v.42, no.9, pp.1327-1330 |
7 |
원문
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Journal
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2021 |
Optimizing Oxide Mixing Ratio for Achieving Energy‐Efficient Oxide Thin‐Film Transistors
Jaehyun Moon Physica Status Solidi (A) - Applications and Materials Science, v.218, no.16, pp.1-5 |
1 |
원문
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Journal
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2018 |
원자층 증착법을 이용한 고이동도 초박막 결정질 인듐 옥사이드 박막 트랜지스터
Lee Jongchan Applied Physics Letters, v.113, no.11, pp.1-5 |
58 |
원문
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Conference
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2017 |
P‐10: High‐Density Plasma Sputtered InZnSnO Thin‐Film Transistors Fabricated by Back Channel Etching Method on Flexible Polyimide Substrate
Cho Sung Haeng Society for Information Display (SID) International Symposium 2017, pp.1262-1264 |
5 |
원문
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Conference
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2015 |
Effects of Er Doping on the Electrical Characteristics of Bottom Gate ZITO Thin Film Transistors
Yang Jiwoong International Conference on Advanced Electromaterials (ICAE) 2015, pp.1-1 |
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Journal
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2015 |
Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning
Cho Sung Haeng IEEE Transactions on Electron Devices, v.62, no.11, pp.3653-3657 |
37 |
원문
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Conference
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2015 |
The Highly Stable InGaZnO TFTs Deposited by High Density Plasma Sputtering
Cho Sung Haeng International Thin-Film Transistor Conference (ITC) 2015, pp.17-18 |
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Conference
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2014 |
33.3: High Mobility and Highly Stable Aluminum‐doped Indium Zinc Tin Oxide Thin‐Film Transistors
Cho Sung Haeng Society for Information Display (SID) International Symposium 2014, v.45, no.1, pp.473-475 |
5 |
원문
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Journal
|
2014 |
Influence of Gate Dielectric/Channel Interface Engineering on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
Cho Sung Haeng Physica Status Solidi (A), v.211, no.9, pp.2126-2133 |
21 |
원문
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Journal
|
2013 |
Comparative studies on electrical bias temperature instabilities of In–Ga–Zn–O thin film transistors with different device configurations
Ryu Min Ki Solid-State Electronics, v.89, pp.171-176 |
21 |
원문
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Journal
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2012 |
Improved Thin Film Transistor Performance of Solution-Processed-Zinc-Oxide Nanorods with Spin-on-Glass Capping Layer
Musarrat Hasan Current Applied Physics, v.12, no.SUPPL. 1, pp.e18-e23 |
4 |
원문
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Journal
|
2011 |
Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor
Yoon Sung Min IEEE Transactions on Electron Devices, v.58, no.7, pp.2135-2142 |
21 |
원문
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Journal
|
2011 |
Improved Performance Uniformity of Inkjet Printed N-channel Organic Field-effect Transistors and Complementary Inverters
Kang-Jun Baeg Organic Electronics, v.12, no.4, pp.634-640 |
66 |
원문
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Journal
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2010 |
High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability
Yang Shinhyuk IEEE Electron Device Letters, v.31, no.2, pp.144-146 |
67 |
원문
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Journal
|
2009 |
Al-Zn-Sn-O thin Film Transistors with Top and Bottom Gate Structure for AMOLED
Cho Doo-Hee IEICE Transactions on Electronics, v.E92-C, no.11, pp.1340-1346 |
8 |
원문
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Conference
|
2009 |
Oxide TFT Structure Affecting the Device Performance
Park Sang-Hee 한국정보디스플레이학회 학술 대회 2009, pp.385-388 |
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Journal
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2009 |
Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors
Jae Kyeong Jeong Applied Physics Letters, v.95, no.12, pp.123505-1-123505-3 |
58 |
원문
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Conference
|
2009 |
21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane
Cho Doo-Hee Society for Information Display (SID) International Symposium 2009, pp.280-283 |
29 |
원문
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Conference
|
2009 |
Effect of Channel/Insulator Interface Formation Process on the Oxide TFT Performance
Park Sang-Hee Society for Information Display (SID) International Symposium 2009, pp.276-279 |
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Journal
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2009 |
Transparent Oxide Thin-Film Transistors Composed of Al and Sn-Doped Zinc Indium Oxide
Cho Doo-Hee IEEE Electron Device Letters, v.30, no.1, pp.48-50 |
18 |
원문
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Journal
|
2009 |
Passivation of Bottom-Gate IGZO Thin Film Transistors
Cho Doo-Hee Journal of the Korean Physical Society, v.54, no.1, pp.531-534 |
43 |
원문
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Conference
|
2008 |
Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
Cho Doo-Hee International Display Workshops (IDW) 2008, pp.1625-1628 |
0 |
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Journal
|
2008 |
Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature
Cho Doo-Hee Applied Physics Letters, v.93, no.14, pp.1-3 |
152 |
원문
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Journal
|
2008 |
Transparent Thin-film Transistors with Zinc Oxide Semiconductor Fabricated by Reactive Sputtering using Metallic Zinc target
Cheong Woo-Seok Thin Solid Films, v.516, no.22, pp.8159-5164 |
12 |
원문
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Conference
|
2008 |
P‐20: Post‐Annealing and Passivations of Transparent Bottom Gate IGZO Thin Film Transistors
Cho Doo-Hee Society for Information Display (SID) International Symposium 2008, pp.1243-1246 |
6 |
원문
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Conference
|
2008 |
AMOLED Panel Using Transparent Bottom Gate IGZO TFT
Cho Doo-Hee 한국전기전자재료학회 학술 대회 (춘계) 2008, pp.39-40 |
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Journal
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2007 |
Novel Organic Inverters with Dual-Gate Pentacene Thin-Film Transistor
Koo Jae Bon Organic Electronics, v.8, no.5, pp.552-558 |
58 |
원문
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Journal
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2007 |
Device Characteristics of Pentacene Dual-Gate Organic Thin-Film Transistor
Koo Jae Bon Japanese Journal of Applied Physics, v.46, no.8A, pp.5062-5066 |
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Journal
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2006 |
Threshold voltage control of pentacene thin‐film transistor with dual‐gate structure
Koo Jae Bon Journal of Information Display, v.7, no.3, pp.27-30 |
7 |
원문
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