Subject

Subjects : AND gate

  • Articles (38)
  • Patents (1)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2024 Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications   Sungjae Chang  ETRI Journal, v.46, no.6, pp.1090-1102 2 원문
Journal 2024 The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors   Junhyung Kim  ELECTRONICS, v.13, no.20, pp.1-8 0 원문
Conference 2023 Oxide Semiconductor Thin-Film Transistors with Deep Submicron Channel Fabricated with Hyperlithography   Sung Chihun  Society for Information Display (SID) International Symposium 2023, pp.692-694 0 원문
Journal 2023 Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process   Min Byoung-Gue  ETRI Journal, v.45, no.1, pp.171-179 4 원문
Journal 2021 Photoinduced Synaptic Behavior of InxTiyO Thin Film Transistors   Lim Jungwook  Advanced Electronic Materials, v.7, no.4, pp.1-7 10 원문
Journal 2020 Density Matrix Simulation of Quantum Error Correction Codes for Near-term Quantum Devices   Chungheon Baek  Quantum Science and Technology, v.5, no.1, pp.1-11 7 원문
Journal 2019 Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect   황인태  Applied Sciences, v.9, no.17, pp.1-13 6 원문
Journal 2019 Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors   Sooji Nam  Applied Sciences, v.9, no.1, pp.1-8 3 원문
Journal 2018 Comparison of Trapped Charges and Hysteresis Behavior in hBN Encapsulated Single MoS2 Flake based Field Effect Transistors on SiO2 and hBN Substrates   이창희  Nanotechnology, v.29, no.33, pp.1-8 88 원문
Journal 2018 Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface   Kim Tae Yoon  ACS Applied Materials & Interfaces, v.10, no.31, pp.26405-26412 14 원문
Conference 2017 Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate   Sungjae Chang  International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89 4 원문
Journal 2017 The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors   Jae Won Do  Thin Solid Films, v.628, pp.31-35 10 원문
Journal 2016 Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer   Soon-Won Jung  Journal of Nanoscience and Nanotechnology, v.16, no.3, pp.2752-2755 14 원문
Conference 2016 Analysis of High-Density Trench Gate MOSFET using SIde-wall Spacer Technology   Kim Sang Gi  International Conference on Electronics, Information and Communication (ICEIC) 2016, pp.751-752
Journal 2014 Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures   이관형  Advanced Functional Materials, v.24, no.32, pp.5157-5163 71 원문
Journal 2014 Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures   Yu Young-Jun  Advanced Functional Materials, v.24, no.32, pp.5157-5163 71 원문
Journal 2014 Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures   강석주  Advanced Functional Materials, v.24, no.32, pp.5157-5163 71 원문
Journal 2014 Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method   Hwang Chi-Sun  IEEE Electron Device Letters, v.35, no.3, pp.360-362 54 원문
Conference 2014 Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts   Hyung Sup Yoon  한국 반도체 학술 대회 (KCS) 2014, pp.1-1
Journal 2013 Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor   Soon-Won Jung  ETRI Journal, v.35, no.4, pp.734-737 18 원문
Conference 2013 Analysis of CNT Emitter-Based Miniature X-Ray Tubes for Stable and Reliable Operation   Kang Jun Tae  International Vacuum Nanoelectronics Conference (IVNC) 2013, pp.1-2 1 원문
Journal 2013 Fast Bit-Parallel Polynomial Basis Multiplier for <i>GF</i>(2<i><sup>m</sup></i>) Defined by Pentanomials Using Weakly Dual Basis   박선미  IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, v.E96.A, no.1, pp.322-331 1 원문
Journal 2012 Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors   Jongmin Lee  Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106 1 원문
Conference 2012 Oxygen Vacancy Effect for the Illumination Instability of In-Ga-O Transparent Thin Film Transistors   Ryu Hojun  International Meeting on Information Display (IMID) 2012, pp.1-2
Journal 2012 The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors   Jang Moon Gyu  Thin Solid Films, v.520, no.6, pp.2166-2169 1 원문
Conference 2011 Drain Bias Induced Instability Characteristics in Oxide Thin Film Transistors   Yang Shinhyuk  International Meeting on Information Display (IMIT) 2011, pp.115-116
Journal 2010 Device Reliability under Electrical Stress and Photo Response of Oxide TFTs   Park Sang-Hee  Journal of the Society for Information Display, v.18, no.10, pp.779-788 11 원문
Journal 2010 High Mobility Top-Gated Poly(3-hexylthiophene) Field-Effect Transistors with High Work-Function Pt Electrodes   백강준  Thin Solid Films, v.518, no.14, pp.4024-4029 56 원문
Journal 2010 Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors   Yoon Sung Min  Japanese Journal of Applied Physics, v.49, no.4 PART 2, pp.1-6 20 원문
Journal 2010 Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C   Yoon Sung Min  Advanced Functional Materials, v.20, no.6, pp.921-926 108 원문
Journal 2010 Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer   Soon-Won Jung  Current Applied Physics, v.10, no.1 SUPPL., pp.e58-e61 31 원문
Journal 2009 Passivation of Bottom-Gate IGZO Thin Film Transistors   Cho Doo-Hee  Journal of the Korean Physical Society, v.54, no.1, pp.531-534 43 원문
Journal 2008 20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors   Jang Moon Gyu  Applied Physics Letters, v.93, no.19, pp.1-3 11 원문
Conference 2008 Top Gate ZnO-TFT Driving AM-OLED Fabricated on a Plastic Substrate   Hwang Chi-Sun  International Meeting on Information Display (IMID) 2008, pp.1466-1469 0
Journal 2006 Significance of Gate Oxide Thinning below 1.5 nm on 1/ f Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress   Bongki Mheen  Japanese Journal of Applied Physics, v.45, no.6A, pp.4943-4947 0 원문
Journal 2006 The Effect of Channel Length on Turn-on Voltage in Pentacene-Based Thin Film Transistor   Koo Jae Bon  Synthetic Metals, v.156, no.7-8, pp.533-536 25 원문
Journal 2005 Strained-SiGe Complementary MOSFETs Adopting Different Thickness of Silicon Cap Layers for Low Power and High Performance Applications   Bongki Mheen  ETRI Journal, v.27, no.4, pp.439-445 8 원문
Journal 2005 A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs   Jong-Won Lim  ETRI Journal, v.27, no.3, pp.304-311 8 원문
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2005 LOW NOISE AMPLIFIER FOR WIDEBAND TUNABLE MATCHING UNITED STATES
연구보고서 검색결과
Type Year Research Project Primary Investigator Download
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