Journal
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2025 |
Efficient pitch‐estimation network for edge devices
Jeong Chi Yoon ETRI Journal, v.47, no.1, pp.112-122 |
0 |
원문
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Conference
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2024 |
Design and Simulation of Enhanced Power Devices: Integrating GaN FinFETs with NiO for Improved Performance
문수영 한국LED·광전자학회 학술대회 2024, pp.1-2 |
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Conference
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2024 |
2kV vertical GaN PiN Diode for High Power Device Applications
Hyung Seok Lee 한국반도체 학술대회 (KCS) 2024, pp.1-2 |
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Conference
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2023 |
GaN Power Devices for high temperature and high voltage applications
Hyung Seok Lee Korean International Semiconductor Conference on Manufacturing Technology (KISM) 2023, pp.1-1 |
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Journal
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2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
Jeonggil Kim Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
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Journal
|
2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
이준혁 Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
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Journal
|
2022 |
Thermal shock reliability of micro–nano bimodal Cu–Ag sintered joints
Son Kirak Journal of Materials Science : Materials in Electronics, v.33, pp.17493-17501 |
2 |
원문
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Journal
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2021 |
Technical Trends in GaN RF Electronic Device and Integrated Circuits for 5G Mobile Telecommunication
Jongmin Lee 전자통신동향분석, v.36, no.3, pp.53-64 |
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원문
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Journal
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 |
5 |
원문
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Journal
|
2020 |
Privacy-Preserving Lightweight Authentication Protocol for Demand Response Management in Smart Grid Environment
유성진 Applied Sciences, v.10, no.5, pp.1-26 |
38 |
원문
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Journal
|
2020 |
Application of Aluminum Flat Heat Pipe for Dry Cooling near the Hot Spot of a Radar Array with a Multiscale Structure
Moon Seok-Hwan Applied Thermal Engineering, v.169, pp.1-9 |
17 |
원문
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Journal
|
2019 |
Conductive adhesive with transient liquid‐phase sintering technology for high‐power device applications
Eom Yong Sung ETRI Journal, v.41, no.6, pp.820-828 |
10 |
원문
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Journal
|
2019 |
Technical Trends in Next-Generation GaN RF Power Devices and Integrated Circuits
Lee Sang-Heung 전자통신동향분석, v.34, no.5, pp.71-80 |
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원문
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Conference
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2019 |
GaN Device Technology for High Voltage and RF Power Application
Hyung Seok Lee 한러 과학기술의 날 2019, pp.1-1 |
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Conference
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2018 |
A Solution of Aluminum Flat Heat Pipe for Dry Cooling the Ladar Array
Suhyun Hong International Heat Transfer Conference (IHTC) 2018, pp.1-8 |
0 |
원문
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Conference
|
2017 |
Current Status of ETRI's GaN Power Device Technology
Mun Jae Kyoung International Conference on Advanced Electromaterials (ICAE) 2017, pp.1-1 |
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Conference
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2017 |
Towards Protected Firmware Verification in Low-power Devices
Moon Yong Hyuk International Conference on Emerging Security Information, Systems and Technologies (SECURWARE) 2017, pp.177-179 |
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Conference
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2017 |
Low-temperature Sintering Behavior of Ternary Solder and Copper Powder for High-Power Device Packaging
Eom Yong Sung European Microelectronics and Packaging Conference (EMPC) 2017, pp.1-4 |
0 |
원문
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Conference
|
2017 |
A High Voltage GaN Impulse Generator for Human Detection UWB Radar Sensor
Kim Kisu International Conference on Ubiquitous Robots and Ambient Intelligence (URAI) 2017, pp.527-528 |
2 |
원문
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Journal
|
2017 |
Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices
Doohyung Cho IEICE Transactions on Electronics, v.E100.C, no.5, pp.439-445 |
0 |
원문
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Conference
|
2016 |
Global R&D Trend of High Efficiency and Low Loss GaN Power Semiconductor Technology
Mun Jae Kyoung 대한전자공학회 학술 대회 (추계) 2016, pp.939-942 |
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Journal
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2015 |
Integrated Sliding-Mode Sensorless Driver with Pre-driver and Current Sensing Circuit for Accurate Speed Control of PMSM
Sewan Heo ETRI Journal, v.37, no.6, pp.1154-1164 |
5 |
원문
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Journal
|
2015 |
Power Trench Gate MOSFET with an Integrated 6-Pack Configuration for a 3-Phase Inverter
Won Jong Il Journal of the Korean Physical Society, v.67, no.7, pp.1214-1221 |
2 |
원문
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Conference
|
2015 |
GaN High Power Devices and Their Applications
Mun Jae Kyoung The Electrochemical Society (ECS) Meeting 2015 (ECS Transactions 66), v.66, no.1, pp.79-83 |
0 |
원문
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Journal
|
2014 |
Practical RSA-PAKE for Low-Power Device in Imbalanced Wireless Networks
Taek-Young Youn International Journal of Distributed Sensor Networks, v.2014, pp.1-6 |
3 |
원문
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Journal
|
2013 |
Negative-Differential-Resistance-Switching Si-Transistor Operated by Power Pulse and Identity of Zener Breakdown
Hyun-Tak Kim Applied Physics Letters, v.103, no.17, pp.1-3 |
2 |
원문
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Journal
|
2013 |
Micromachined stress-free TSV hole for AlGaN/GaN-on-Si (1 1 1) platform-based devices
Sang Choon Ko Journal of Micromechanics and Microengineering, v.23, no.3, pp.1-7 |
3 |
원문
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Conference
|
2013 |
Development of the Backside Via Holes Process for SiC Power Device
Sang Choon Ko 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Journal
|
2012 |
A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation
Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556 |
2 |
원문
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Journal
|
2010 |
Linearity enhanced 2.4 GHz WLAN HBT power amplifier using digitally-controlled tunable output matching network with pHEMT switch in GaAs BiFET technology
윤상웅 Electronics Letters, v.46, no.23, pp.1573-1574 |
6 |
원문
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Conference
|
2010 |
Mini Piezoelectric Power Generator with Multi-Frequency Response
Sang Choon Ko Eurosensors 2010, pp.770-773 |
1 |
원문
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Conference
|
2008 |
Excavating to Add Unlicensed FACS Service in Korea
Jahng Jae-Hyouk European Regional Conference of the International Telecommunications Society (ITS) 2008, pp.1-11 |
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Conference
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2003 |
5 GHz 대역 단일전압, 고선형성, 고효율 PHEMT 전력 소자 및 전력 증폭기 특성
Min Park European Microwave Conference (EuMC) 2003, pp.371-374 |
9 |
원문
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Journal
|
2003 |
Trenched-Sinker LDMOSFET (TS-LDMOS) Structure for 2 GHz Power Amplifiers
Kim Cheon Soo ETRI Journal, v.25, no.3, pp.195-202 |
4 |
원문
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Conference
|
2003 |
Experiments on radio interference between wireless LAN and other radio devices on a 2.4 GHz ISM band
Park Jina Vehicular Technology Conference (VTC) 2003 (Spring), pp.1798-1801 |
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원문
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