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Journal
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2025 |
The morphological control of PEDOT:PSS top electrode for transparent organic light-emitting diodes
Hyunsu Cho Journal of Industrial and Engineering Chemistry, v.권호미정, pp.1-10 |
0 |
원문
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Journal
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2025 |
The morphological control of PEDOT:PSS top electrode for transparent organic light-emitting diodes
남혁진 Journal of Industrial and Engineering Chemistry, v.권호미정, pp.1-10 |
0 |
원문
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Conference
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2024 |
Enhancing Ohmic Contacts in GaN HEMT through Optimization of Ramp-up Rate in Annealing Process
Junhyung Kim International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1104-1105 |
0 |
원문
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Journal
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2024 |
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors
Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8 |
0 |
원문
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Journal
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2023 |
Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications
조홍래 ACS Applied Materials & Interfaces, v.15, no.44, pp.51339-51349 |
7 |
원문
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Conference
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2023 |
Fabrication of AlGaN/GaN Heterostructure FET using Multi-Step Ohmic Annealing Process
Kim Zin-Sig 한국반도체 학술대회 (KCS) 2023, pp.746-746 |
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Journal
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2020 |
Employing Vanadium Dioxide Nanoparticles for Flexible Metasurfaces with Switchable Absorption Properties at Near-infrared Frequencies
Trevon Badloe Journal of Optics, v.22, no.11, pp.1-7 |
27 |
원문
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Journal
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2020 |
Employing Vanadium Dioxide Nanoparticles for Flexible Metasurfaces with Switchable Absorption Properties at Near-infrared Frequencies
Ko Byoung Su Journal of Optics, v.22, no.11, pp.1-7 |
27 |
원문
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Journal
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2020 |
High quality GaAs epitaxially grown on Si(001) substrate through AlAs nucleation and thermal cycle annealing
Young-Ho Ko Solid-State Electronics, v.166, pp.1-5 |
5 |
원문
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Journal
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2020 |
Synthesis and Gas Sensing Properties of WS2 Nanocrystallites Assembled Hierarchical WS2 Fibers by Electrospinning
Youn Doo Hyeb Nanotechnology, v.31, no.10, pp.1-12 |
24 |
원문
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Journal
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2018 |
High Performance SONOS Flash Memory with In-Situ Silicon Nanocrystals Embedded in Silicon Nitride Charge Trapping Layer
임재갑 Solid-State Electronics, v.140, pp.134-138 |
13 |
원문
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Journal
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2017 |
Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing
남윤성 Journal of Luminescence, v.188, pp.595-599 |
5 |
원문
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Journal
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2017 |
The role of oxygen in dramatically enhancing the electrical properties of solution-processed Zn–Sn–O thin-film transistors
Chosy Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.26, pp.6521-6526 |
15 |
원문
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Journal
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2017 |
Pre-Annealing Effect for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors
Kang Chan-Mo Journal of Nanoscience and Nanotechnology, v.17, no.5, pp.3293-3297 |
3 |
원문
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Journal
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2016 |
Low-temperature, Solution-processed Indium-oxide Thin-film Transistors Fabricated by Using an Ultraviolet-ozone Treatment
Kim Hoon Journal of the Korean Physical Society, v.68, no.8, pp.971-974 |
4 |
원문
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Conference
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2016 |
Athermal and Wavelength-Trimmable Silicon MZI
Lee Jong-Moo Optical Fiber Communication Conference (OFC) 2016, pp.1-3 |
2 |
원문
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Journal
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2016 |
Postfabrication Trimming of CMOS-Compatible Athermal MZI by Thermal Annealing
Lee Jong-Moo IEEE/OSA Journal of Lightwave Technology, v.34, no.4, pp.1288-1292 |
6 |
원문
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Journal
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2014 |
Generation and Detection of Terahertz Waves Using Low- Temperature-Grown GaAs with an Annealing Process
Moon Kiwon ETRI Journal, v.36, no.1, pp.159-162 |
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Journal
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2014 |
Improved Surface Passivation Using Dual-Layered a-Si:H for Silicon Heterojunction Solar Cells
Lee Kyu Sung ECS Solid State Letters, v.3, no.3, pp.P33-P36 |
17 |
원문
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Journal
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2013 |
The Observation of Electrical Hysteric Behavior in Synthesized V2O5 Nanoplates by Recrystallization
김창희 Journal of Nanomaterials, v.2013, pp.1-8 |
4 |
원문
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Conference
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2013 |
A Novel Super-Junction Trench Gate MOSFET Fabricated Using High Aspect-Ratio Trench Etching and Boron Lateral Diffusion Technologies
Kim Sang Gi International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2013, pp.233-236 |
5 |
원문
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Journal
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2013 |
Liquid Crystal Devices Incorporating Transparent Zn, Sn Co-Doped In2O3 Electrodes Prepared by Direct Inkjet-Printing of Nanosized Particles
박경원 Journal of Physics D : Applied Physics, v.46, no.14, pp.1-6 |
11 |
원문
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Journal
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2012 |
Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors
박준용 ACS Applied Materials & Interfaces, v.4, no.10, pp.5369-5374 |
27 |
원문
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Journal
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2011 |
Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs
Jun Myungsim Semiconductor Science and Technology, v.26, no.12, pp.1-4 |
0 |
원문
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Conference
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2011 |
Developmoent of High-temperature Endurable CNT Emitter for a Cold Cathode X-ray Tube
Kim Jae-Woo International Vacuum Nanoelectronics Conference (IVNC) 2011, pp.1-2 |
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Journal
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2011 |
Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes
Tae-Youb Kim Japanese Journal of Applied Physics, v.50, no.4 PART 2, pp.1-3 |
4 |
원문
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Journal
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2010 |
Effects of Thermal Annealing on the Efficiency of Bulk-Heterojunction Organic Photovoltaic Devices
정진욱 Current Applied Physics, v.10, no.3 SUPPL., pp.S520-S524 |
8 |
원문
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Journal
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2009 |
Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique
문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624 |
6 |
원문
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Journal
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2009 |
Fabrication of P-Type ZnO Thin Films Using Rf-Magnetron Sputter Deposition
Jun Kwan Kim Electrochemical and Solid-State Letters, v.12, no.4, pp.H109-H112 |
15 |
원문
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Journal
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2009 |
Vanadium Dioxide and Vanadium Sesquioxide Thin Films Fabricated on (0001) or (10 10)Al2O3 by Reactive RF-Magnetron Sputter Deposition and Subsequent Annealing Processes
Sun Jin Yun Japanese Journal of Applied Physics, v.48, no.4, pp.1-4 |
9 |
원문
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Journal
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2008 |
Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions
신진욱 IEEE Electron Device Letters, v.29, no.12, pp.1336-1339 |
4 |
원문
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Conference
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2008 |
VO2 and V2O3 Films Fabricated on (1000) or (1010)Al2O3 by Reactive RF-Magnetron Sputter Deposition and Annealing Processes
Sun Jin Yun International Conference on Solid State Devices and Materials (SSDM) 2008, pp.1-2 |
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Journal
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2008 |
Characteristics of Vanadium Dioxide Films Deposited by RF-magnetron Sputter Deposition Technique using V-metal Target
Sun Jin Yun Physica B : Condensed Matter, v.403, no.5-9, pp.1381-1383 |
20 |
원문
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Journal
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2008 |
A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET
Chang-Geun Ahn Materials Science and Engineering B, v.147, no.2-3, pp.183-186 |
4 |
원문
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Journal
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2008 |
E ects of the Crystalline Properties on the Dielectric Performances in Ba0:5Sr0:5TiO3 Thin Films
S H Hong Journal of the Korean Physical Society, v.52, no.2, pp.421-426 |
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Journal
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2006 |
Field Emission from Ni-Disilicide Nanorods Formed by using Implantation of Ni in Si Coupled with Laser Annealing
옥영우 Applied Physics Letters, v.88, no.4, pp.1-3 |
26 |
원문
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