Subject

Subjects : gate length

  • Articles (31)
  • Patents (0)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Conference 2024 GaAs mHEMT Technology Achieving a High Cut-off Frequncy of 446 GHz with a Gate Length of 75 nm   Park Jongyul  International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1468-1469 0 원문
Conference 2024 Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs   Jung Hyunwook  International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444 0 원문
Journal 2023 Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process   Min Byoung-Gue  ETRI Journal, v.45, no.1, pp.171-179 4 원문
Journal 2017 Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing   Hyung Sup Yoon  Journal of the Korean Physical Society, v.71, no.6, pp.360-364 2 원문
Journal 2017 Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications   Jongmin Lee  Journal of the Korean Physical Society, v.71, no.6, pp.365-369 7 원문
Journal 2016 Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate   Hyung Sup Yoon  IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 28 원문
Journal 2016 Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET   Hokyun Ahn  ETRI Journal, v.38, no.4, pp.675-684 5 원문
Conference 2016 GaN HEMT Modeling for X-band Applications   Kim Seong-Il  대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560
Conference 2016 Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate   Jongmin Lee  한국 반도체 학술 대회 (KCS) 2016, pp.1-2
Journal 2015 Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs   Kyu Jun Cho  Journal of the Korean Physical Society, v.67, no.4, pp.682-686 3 원문
Conference 2015 X-Band Power Amplifier Using 40W GaN-on-SiC HEMT   Dong Min Kang  대한전자공학회 종합 학술 대회 (하계) 2015, pp.231-234
Conference 2015 Variations of DC Properties of AlGaN/GaN HEMT by Process Enhancement of Gate Recess   Min Byoung-Gue  대한전자공학회 종합 학술 대회 (하계) 2015, pp.192-195
Journal 2015 X‐band 100 W solid‐state power amplifier using a 0.25 μM GaN HEMT technology   Dong Min Kang  Microwave and Optical Technology Letters, v.57, no.1, pp.212-216 6 원문
Conference 2014 100W Pulsed SSPA Using 25W AlGaN/GaN HEMT Technology at 9.2 - 9.5 GHz   Dong Min Kang  International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.75-75
Conference 2014 Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts   Hyung Sup Yoon  한국 반도체 학술 대회 (KCS) 2014, pp.1-1
Journal 2011 Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs   Jun Myungsim  Semiconductor Science and Technology, v.26, no.12, pp.1-4 0 원문
Conference 2011 Design of 220 GHz-band Amplifier Using InP HEMT Technology   Woojin Chang  International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2011, pp.1120-1122
Journal 2011 High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm   Jun Myungsim  Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4 1 원문
Conference 2010 Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications   Woojin Chang  대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987
Journal 2008 A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET   Chang-Geun Ahn  Materials Science and Engineering B, v.147, no.2-3, pp.183-186 4 원문
Journal 2007 Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates   Hyung Sup Yoon  Journal of the Korean Physical Society, v.50, no.3, pp.889-892 4 원문
Conference 2006 Numerical Analysis and IR Scan Test for Thermal Resistance of GaAs MMIC in a Communications Satellite   Kwak Changsoo  Asia-Pacific Microwave Conference (APMC) 2006, pp.1011-1014 0 원문
Journal 2005 30-nm recessed S/D SOI MOSFET with an ultrathin body and a low SDE resistance   Chang-Geun Ahn  IEEE Electron Device Letters, v.26, no.7, pp.486-488 16 원문
Conference 2005 EBL Patterning of Sub-10 nm Line Using HSQ with Plasma Etching Process and Fabricating of Triple-Gate MOS Transistors with 6 nm Gate Length   Baek In Bok  Silicon Nanoelectronics Workshop (SNW) 2005, pp.16-17
Conference 2005 A CMOS Burst-Mode Up-Stream Transmitter For Fiber-Optic Gigabit Ethernet Applications   오영훈  International Conference on Advanced Communication Technology (ICACT) 2005, pp.1283-1286 원문
Conference 2004 Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance   Chang Geun Ahn  International SOI Conference 2004, pp.207-208 원문
Journal 2004 Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique   Cho Wonju  IEEE Electron Device Letters, v.25, no.6, pp.366-368 35 원문
Journal 2004 The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs   Youn Doo Hyeb  IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789 15 원문
Journal 2002 High Transconductance Modulation-doped SiGe pMOSFETs by RPCVD   Young Joo Song  Electronics Letters, v.38, no.23, pp.1479-1480 3 원문
Conference 2002 The Effects of Plasma Induced Damage on The Channel Layers of Ion Implanted GaAs MESFETs during Reactive Ion Etching(RIE) and Plasma Ashing Processes   Hokyun Ahn  Materials Research Society (MRS) Meeting 2002 (Spring), v.720, pp.67-72 1 원문
Journal 2001 A new technique to extract channel mobility in submicron MOSFETs using inversion charge slope obtained from measured S-parameters   Seonghearn Lee  IEEE Transactions on Electron Devices, v.48, no.4, pp.784-788 12 원문
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