Subject

Subjects : oscillation frequency

  • Articles (37)
  • Patents (5)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2024 Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications   Sungjae Chang  ETRI Journal, v.46, no.6, pp.1090-1102 2 원문
Conference 2024 0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band   Junhyung Jeong  International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457 0 원문
Journal 2024 A 19‐GHz low‐phase‐noise frequency synthesizer for a K‐band FMCW radar sensor of detecting micro unmanned aerial vehicles   Lee Ja Yol  Electronics Letters, v.60, no.2, pp.1-3 0 원문
Journal 2021 Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications   문석호  ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592 13 원문
Journal 2021 Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors   Sungjae Chang  Crystals, v.11, no.11, pp.1-10 6 원문
Journal 2021 Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates   Kim Zin-Sig  Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 원문
Journal 2020 W‐Band MMIC chipset in 0.1‐μm mHEMT technology   Jongmin Lee  ETRI Journal, v.42, no.4, pp.549-561 6 원문
Journal 2019 Low-phase-noise Self-sustaining Amplifier IC with Parallel Capacitance Cancellation for Low-Q Piezoelectric Resonator   김형섭  Microsystem Technologies, v.25, no.5, pp.2041-2050 4 원문
Journal 2017 Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing   Hyung Sup Yoon  Journal of the Korean Physical Society, v.71, no.6, pp.360-364 2 원문
Journal 2017 Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications   Jongmin Lee  Journal of the Korean Physical Society, v.71, no.6, pp.365-369 7 원문
Journal 2016 Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate   Hyung Sup Yoon  IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 28 원문
Journal 2015 DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2   Hyung Sup Yoon  Journal of the Korean Physical Society, v.67, no.4, pp.654-657 3 원문
Journal 2013 Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment   Jong-Won Lim  Thin Solid Films, v.547, pp.106-110 10 원문
Journal 2013 Low-Voltage, High Speed Inkjet-Printed Flexible Complementary Polymer Electronic Circuits   백강준  Organic Electronics, v.14, no.5, pp.1407-1418 64 원문
Journal 2012 Laser-Assisted Control of Electrical Oscillation in VO2 Thin Films Grown by Pulsed Laser Deposition   Kim Bongjun  Japanese Journal of Applied Physics, v.51, no.10, pp.1-5 9 원문
Journal 2012 Photo-Assisted Electrical Oscillation in Two-Terminal Device Based on Vanadium Dioxide Thin Film   Seo Giwan  IEEE/OSA Journal of Lightwave Technology, v.30, no.16, pp.2718-2724 14 원문
Journal 2011 Charge Injection Engineering of Ambipolar Field-Effect Transistors for High-Performance Organic Complementary Circuits   Kang-Jun Baeg  ACS Applied Materials & Interfaces, v.3, no.8, pp.3205-3214 154 원문
Journal 2011 Dependences of the Characteristics of an InGaP/GaAs HBT for Applications in Power Amplifiers on the Structural Parameters   Min Byoung-Gue  Journal of the Korean Physical Society, v.59, no.21, pp.435-438 2 원문
Journal 2011 High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductors   Kang-Jun Baeg  Journal of Polymer Science Part B : Polymer Physics, v.49, no.1, pp.62-67 103 원문
Journal 2010 Linear Characteristics of a Metal-Insulator Transition Voltage and Oscillation Frequency in VO2 Devices   Kim Bongjun  IEEE Electron Device Letters, v.31, no.11, pp.1314-1316 11 원문
Journal 2009 Fabrication of Transimpedance Amplifier Module and Post-Amplifier Module for 40 Gb/s Optical Communication Systems   Jongmin Lee  ETRI Journal, v.31, no.6, pp.749-754 3 원문
Journal 2009 Frequency-Controllable Room-Temperature Electrical Oscillation in Two-Terminal Device Based on VO2 Thin Film   Lee Yongwook  Journal of the Korean Physical Society, v.55, no.1, pp.134-139 1 원문
Conference 2008 Current reuse cross-coupling CMOS VCO using the center-tapped transformer in LC tank for digitally controlled oscillator   Lee. Young-Jae  Radio Frequency Integrated Circuits Symposium (RFIC) 2008, pp.549-552 2 원문
Journal 2008 Metal-insulator Transition-induced Electrical Oscillation in Vanadium Dioxide Thin Film   Lee Yongwook  Applied Physics Letters, v.92, no.16, pp.1-3 100 원문
Conference 2007 A 9.1-to-11.5-GHz Four-Band PLL for X-Band Satellite & Optical Communication Applications   Lee Ja Yol  Radio Frequency Integrated Circuits Symposium (RFIC) 2007, pp.233-236 5 원문
Conference 2007 A 15-GHz 7-channel SiGe:C PLL for 60-GHz WPAN Application   Lee Ja Yol  Radio Frequency Integrated Circuits Symposium (RFIC) 2007, pp.537-540 6 원문
Conference 2007 Development of Local Oscillators for COMS Communications Payload   Shin Dong Hwan  AIAA International Communications Satellite Systems Conference (ICSSC) 2007, pp.1-5 0
Journal 2007 Packaged Broadband Amplifier for 40-Gb/s Optical Transmission Systems in InP HBT Technology   Jongmin Lee  Journal of the Korean Physical Society, v.50, no.3, pp.871-874 2 원문
Conference 2007 Q - Enhanced 5GHz CMOS VCO Using 4-port Transformer   Lee. Young-Jae  Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2007, pp.119-122 10 원문
Journal 2006 Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer   Jong-Won Lim  Journal of the Korean Physical Society, v.49, no.3, pp.S774-S779
Journal 2006 Dependence of the DC and the RF Characteristics of InGaAs /InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness   Kim Yong Won  Journal of the Korean Physical Society, v.49, no.3, pp.1202-1206
Journal 2006 Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process   Jong-Won Lim  Japanese Journal of Applied Physics, v.45, no.4B, pp.3358-3363 0 원문
Journal 2006 Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies   Lee Seung-Yun  Solid-State Electronics, v.50, no.3, pp.333-339 4 원문
Conference 2006 Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer   Jong-Won Lim  한국반도체 학술 대회 (KCS) 2006, pp.1-2
Conference 2005 A Comparative Study on the DC, RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors with Different Collector Layer Thickness   Kim Yong Won  Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4 0 원문
Journal 2005 An X-Band Carbon-Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator   김영기  ETRI Journal, v.27, no.1, pp.75-80 5 원문
Conference 2002 RF performance tradeoffs of SiGe HBT fabricated by reduced pressure chemical vapor deposition   Bongki Mheen  International Microwave Symposium (IMS) 2002, pp.413-416 3 원문
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2017 국부발진 주파수 특성 정합을 위한 레이더 시스템 및 이의 구동방법 KOREA KIPRIS
Registered 2012 Receiving Apparatus and Method of User Equipment for Scalable Bandwidth UNITED STATES
Registered 2009 RECEIVER AND RECEIVING METHOD FOR SCALABLE BANDWIDTH UNITED STATES
Registered 2006 LOW PHASE NOISE DIFFERENTIAL LC TANK VCO WITH CURRENT NEGATIVE FEEDBACK UNITED STATES
Registered 2010 A Voltage Controlled Oscillator with a stabilized oscillation frequency for the conducted EMI noises on supply voltage UNITED STATES
연구보고서 검색결과
Type Year Research Project Primary Investigator Download
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