Subjects : Gate voltage

Articles (44)
Patents (2)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2024	Benzylphosphonic acid treated ultra-thin ALD-InOx for long term device stability Juhun Lee Journal of Materials Chemistry C, v.12, no.31, pp.11928-11937	1
Journal	2023	Synaptic devices for simulating brain processes in visual-information perception to persisting memory through attention mechanisms Kim Jieun MATERIALS TODAY ADVANCES, v.20, pp.1-8	3
Journal	2023	Novel approach for implementing ternary value logic devices showing negative differential transconductance characteristics by Fowler–Nordheim tunneling Kim Jieun Materials Science in Semiconductor Processing, v.164, pp.1-6	1
Journal	2022	Photo-Synaptic Oxide Transistors with Al2O3/SiOx Stacked Gate Dielectric Exhibiting 1024 Conduction States with Good Linearity Lim Jungwook Advanced Electronic Materials, v.8, no.10, pp.1-5	6
Journal	2022	Effects of DC and AC Stress on the VT Shift of AlGaN/GaN MIS-HEMTs Kang Soo Cheol Current Applied Physics, v.39, pp.128-132	0
Journal	2021	Photoinduced Synaptic Behavior of InxTiyO Thin Film Transistors Lim Jungwook Advanced Electronic Materials, v.7, no.4, pp.1-7	10
Conference	2020	Structural Design and Simulation of MOS Controlled Thyristor with 0V Turn-off Capability Sungkyu Kwon 대한전자공학회 학술 대회 (추계) 2020, pp.157-160
Journal	2020	Electrochromic Infrared Light Modulation in Optical Waveguides Jin Tae Kim Advanced Optical Materials, v.8, no.1, pp.1-8	12
Journal	2018	Facile Fabrication of Self-assembled ZnO Nanowire Network Channels and Its Gate-controlled UV Detection 장호찬 Nanoscale Research Letters, v.13, pp.1-9	13
Journal	2018	High Performance Self-gating Graphene/MoS2 Diode Enabled by Asymmetric Contacts 무하마드칸 Nanotechnology, v.29, no.39, pp.1-6	7
Journal	2014	Low-Voltage-Operated Organic One-Time Programmable Memory Using Printed Organic Thin-Film Transistors and Antifuse Capacitors Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.14, no.11, pp.8167-8170	3
Journal	2014	Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures 이관형 Advanced Functional Materials, v.24, no.32, pp.5157-5163	71
Journal	2014	Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures Yu Young-Jun Advanced Functional Materials, v.24, no.32, pp.5157-5163	71
Journal	2014	Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures 강석주 Advanced Functional Materials, v.24, no.32, pp.5157-5163	71
Journal	2014	Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate Hokyun Ahn Solid-State Electronics, v.95, pp.42-45	18
Journal	2013	Analysis of Failure in Miniature X‐ray Tubes with Gated Carbon Nanotube Field Emitters Kang Jun Tae ETRI Journal, v.35, no.6, pp.1164-1167	18
Journal	2013	Comparative studies on electrical bias temperature instabilities of In–Ga–Zn–O thin film transistors with different device configurations Ryu Min Ki Solid-State Electronics, v.89, pp.171-176	21
Journal	2013	Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures 이관형 ACS Nano, v.7, no.9, pp.7931-7936	1014
Journal	2013	Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor Soon-Won Jung ETRI Journal, v.35, no.4, pp.734-737	18
Journal	2013	Electrical Characteristics of Triple-Gate RSO Power MOSFET (TGRMOS) with Various Gate Configurations and Bias Conditions Na Kyoung Il ETRI Journal, v.35, no.3, pp.425-430	4
Conference	2013	Effects of Various Field Plates for Normally-Off GaN MISFETs Woojin Chang International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2013, pp.332-333
Conference	2013	Simulation Studies of Triple Gate Trench Power MOSFETs (TGRMOSs) by Using Modified Resurf Stepped Oxide (RSO) Process with Various Gate Configuration and its Bias Condition Na Kyoung Il 한국 반도체 학술 대회 (KCS) 2013, pp.1-2
Conference	2012	Highly Efficient Doherty Amplifier with Peaking Cell Controlled Using Optimized Shaped Gate Voltage 김준형 International Microwave Symposium (IMS) 2012, pp.1-3	1
Journal	2012	Subthreshold Characteristics of Pentacene Field-Effect Transistors Influenced by Grain Boundaries Park Jae Hoon Journal of Applied Physics, v.111, no.10, pp.1-6	12
Conference	2011	High-transmission Triode CNT Emitter on Metal Tip for Super-miniature X-ray Tube Kang Jun Tae International Vacuum Nanoelectronics Conference (IVNC) 2011, pp.145-146
Journal	2011	Low-voltage-operated Top-gate Polymer Thin-film Transistors with High-capacitance P(VDF-TrFE)/PVDF-blended Dielectrics Soon-Won Jung Current Applied Physics, v.11, no.3 Suppl., pp.S213-S218	44
Journal	2011	“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel Yoon Sung Min Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499	2
Journal	2010	Low-Voltage-Operated Top-Gate Polymer Thin-Film Transistors with high Capacitance Poly(Vinylidene Fluoride-Trifluoroethylene)/Poly(Methyl Methacrylate) Dielectrics Soon-Won Jung Journal of Applied Physics, v.108, no.10	45
Journal	2010	Modified Ion Sensitive Field Effect Transistor Sensors having an Extended Gate on a Thick Dielectric Chang-Geun Ahn Applied Physics Letters, v.96, no.20, pp.1-3	5
Journal	2010	Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926	108
Journal	2009	Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer Yoon Sung Min Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6	32
Journal	2009	Impact of Sn/Zn Ratio on the Gate Bias and Temperature-Induced Instability of Zn-In-Sn-O thin Film Transistors Ryu Min Ki Applied Physics Letters, v.95, no.17, pp.173508-1-173508-3	105
Conference	2009	Modified ISFETs Having an Extended Gate on the Thick Dielectric Chang-Geun Ahn SENSORS 2009, pp.371-374	0
Journal	2009	Low-Frequency Noise in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors 이정민 IEEE Electron Device Letters, v.30, no.5, pp.505-507	61
Journal	2009	Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477	1
Journal	2009	Charge Storage Effect on In2O3 Nanowires with Ruthenium Complex Molecules Choi Insung Applied Physics Express, v.2, no.1, pp.1-3	0
Journal	2008	Electrostatic Modification of Infrared Response in Gated Structures based on VO2 M. M. Qazilbash Applied Physics Letters, v.92, no.24, pp.1-3	65
Journal	2007	Hysteresis and Threshold Voltage Shift of Pentacene Thin-film Transistors and Inverters with Al2O3 Gate Dielectric Koo Jae Bon Applied Physics Letters, v.90, no.13, pp.1-3	58
Journal	2006	Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732	32
Journal	2005	New Method of Driving an OLED with an OTFT Lim Sang Chul Synthetic Metals, v.151, no.3, pp.197-201	18
Journal	2005	SOI single-electron transistor with low RC delay for logic cells and SET/FET hybrid ICs Kim Dong Kyu IEEE Transactions on Nanotechnology, v.4, no.2, pp.242-248	42
Journal	2003	Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications Jang Moon Gyu IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209	16
Journal	2003	엑시머 레이저 에 의해 형성된 TFT 특성 Kim Yong Hae Thin Solid Films, v.440, no.1-2, pp.169-173	12
Journal	2003	A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing Kim Jongdae IEEE Transactions on Electron Devices, v.50, no.2, pp.378-383	5

특허 검색결과
Status	Year	Patent Name	Country	Family Pat.	KIPRIS
Registered	2007	Multiple-gate MOS transistor and a method for manufacturing the same	UNITED STATES
Registered	2013	CURRENT CONTROLLING DEVICE AND ELECTRIC FIELD EMISSION SYSTEM INCLUDING THE SAME	UNITED STATES

연구보고서 검색결과
Type	Year	Research Project	Primary Investigator	Download
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