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Journal
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2024 |
Effect of the Post-Annealing Temperature on the Interfacial Reaction Between a High Tc Superconductor and Topological Insulator
Lee Woo Jung Advanced Electronic Materials, v.10, no.7, pp.1-9 |
3 |
원문
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Journal
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2020 |
Optimized Annealing Conditions to Enhance Stability of Polarization in Sputtered HfZrOx Layers for Non-volatile Memory Applications
Kim Yeriaron Current Applied Physics, v.20, no.12, pp.1441-1446 |
16 |
원문
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Journal
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2020 |
Ferroelectric Switching in Trilayer Al2O3/HfZrOx/Al2O3 Structure
Im Solyee Micromachines, v.11, no.10, pp.1-10 |
9 |
원문
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Journal
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2020 |
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
도재원 Journal of the Korean Physical Society, v.76, no.9, pp.837-842 |
0 |
원문
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Journal
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2020 |
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
Jung Hyunwook Journal of the Korean Physical Society, v.76, no.9, pp.837-842 |
0 |
원문
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Journal
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2018 |
Deposition Pressure Dependent Electric Properties of (Hf, Zr)O2 Thin Films Made by RF Sputtering Deposition Method
Moon Seungeon Journal of the Korean Physical Society, v.73, no.11, pp.1712-1715 |
0 |
원문
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Journal
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2018 |
High-performance ZnO:Ga/Ag/ZnO:Ga Multilayered Transparent Electrodes Targeting Large-scale Perovskite Solar Cells
Seong Hyun Lee Solar Energy Materials & Solar Cells, v.186, pp.378-384 |
28 |
원문
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Journal
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2017 |
Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing
남윤성 Journal of Luminescence, v.188, pp.595-599 |
5 |
원문
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Journal
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2017 |
Effects of Ga concentration in Cu(In,Ga)Se 2 thin film solar cells with a sputtered-Zn(O,S) buffer layer
Wi Jae-Hyung Solar Energy, v.145, pp.59-65 |
9 |
원문
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Journal
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2016 |
Solution-processed Indium-free ZnO/SnO2 Bilayer Heterostructures as a Low-temperature Route to High-performance Metal Oxide Thin-film Transistors with Excellent Stabilities
Sooji Nam Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.4, no.47, pp.11298-11304 |
45 |
원문
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Conference
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2016 |
High Performance Solution-processed Indium-free Metal Oxide Thin-film Transistors
Sooji Nam International Meeting on Information Display (IMID) 2016, pp.188-188 |
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Journal
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2016 |
Work Function Engineering of SnO Single Crystal Microplates with Thermal Annealing
도원희 Nanotechnology, v.27, no.33, pp.1-7 |
19 |
원문
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Journal
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2016 |
The Bilayer Structure for Low-Temperature, Solution-Processed Indium Zinc Oxide Thin-Film Transistors
Yeonwha Oh Journal of Nanoscience and Nanotechnology, v.16, no.8, pp.8692-8695 |
2 |
원문
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Conference
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2015 |
Effect of Post-Annealing Temperatures on SnO2/Al2O3 Superlattice Thin Fiim Transistors Grown by Atomic Layer Deposition
Lee Hwanjae International Conference on Advanced Electromaterials (ICAE) 2015, pp.1-1 |
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Journal
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2015 |
Ohmic Contact to AlGaN/GaN Heterostructures on Sapphire Substrates
Kim Zin-Sig Journal of the Korean Physical Society, v.66, no.5, pp.779-784 |
3 |
원문
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Journal
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2014 |
Electrical Properties of Solution-Deposited ZnO Thin-Film Transistors by Low-Temperature Annealing
Lim Sang Chul Journal of Nanoscience and Nanotechnology, v.14, no.11, pp.8665-8670 |
8 |
원문
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Journal
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2014 |
Characteristics of Temperature and Wavelength Dependence of CuInSe2 Thin-Film Solar Cell with Sputtered Zn(O,S) and CdS Buffer Layers
Wi Jae-Hyung Physica Status Solidi (A), v.211, no.9, pp.2172-2176 |
18 |
원문
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Journal
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2014 |
Device Characteristics of Inkjet-Printed ZnO TFTs by Solution Process
Lim Sang Chul Japanese Journal of Applied Physics, v.53, no.5S3, pp.1-5 |
8 |
원문
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Journal
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2014 |
Characterization of ZnO–SnO2 nanocomposite thin films deposited by pulsed laser ablation and their field effect electronic properties
Su Jae Lee Materials Letters, v.122, pp.94-97 |
20 |
원문
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Journal
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2014 |
Triethylene glycol–titanium oxide hydrate hybrid films with high refractive index and surface evenness
Park Seung Koo Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.2, no.22, pp.4468-4475 |
10 |
원문
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Journal
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2013 |
The Observation of Electrical Hysteric Behavior in Synthesized V2O5 Nanoplates by Recrystallization
김창희 Journal of Nanomaterials, v.2013, pp.1-8 |
4 |
원문
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Journal
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2013 |
The effect of structural and chemical bonding changes on the optical properties of Si/Si1−xCx core/shell nanowires
Lee Woo Jung Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.1, no.34, pp.5207-5215 |
4 |
원문
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Journal
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2012 |
Improved Thin Film Transistor Performance of Solution-Processed-Zinc-Oxide Nanorods with Spin-on-Glass Capping Layer
Musarrat Hasan Current Applied Physics, v.12, no.SUPPL. 1, pp.e18-e23 |
4 |
원문
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Journal
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2012 |
Chalcogenide Programmable Switches with SiGeSb Heating Layers
이승윤 Journal of Non-Crystalline Solids, v.358, no.17, pp.2405-2408 |
1 |
원문
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Journal
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2011 |
Self-Aligned Formation of Nanoscale Phase Change Materials for Nonvolatile Memory Application
이승윤 Japanese Journal of Applied Physics, v.50, no.6 PART 2, pp.1-5 |
0 |
원문
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Journal
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2010 |
Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)
Yoon Sung Min Organic Electronics, v.11, no.11, pp.1746-1752 |
18 |
원문
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Journal
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2010 |
Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer
Yoon Sung Min Journal of the Electrochemical Society, v.157, no.7, pp.H771-H778 |
3 |
원문
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Journal
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2010 |
In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO2 Films
최철종 Materials Transactions, v.51, no.4, pp.793-798 |
3 |
원문
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Journal
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2009 |
Electrical, Structural and Optical Characterization of Copper Oxide thin Films as a Function of Post Annealing Temperature
V. Figueiredo Physica Status Solidi (A), v.206, no.9, pp.2143-2148 |
71 |
원문
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Journal
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2009 |
The Characterization of the Si1-xSbx Thin Films for iIfrared Microbolometer
이동근 반도체 및 디스플레이장비학회지, v.8, no.3, pp.13-17 |
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Journal
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2009 |
Annealing-induced Modifications of Carrier Dynamics andPlasmon-phonon Coupling in Low-temperature-grown GaAs
김창섭 Journal of the Korean Physical Society, v.55, no.2, pp.630-635 |
1 |
원문
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Journal
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2009 |
Fabrication and Electrical Properties of Ordered Two-Dimensional Hollow ZnO Shells’ Arrays
Jaehyun Moon Journal of Physics and Chemistry of Solids, v.70, no.8, pp.1166-1170 |
1 |
원문
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Conference
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2009 |
21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane
Cho Doo-Hee Society for Information Display (SID) International Symposium 2009, pp.280-283 |
29 |
원문
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Journal
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2009 |
Fabrication and Characterization of ZnO Nanofibers by Electrospinning
Park Jin Ah Current Applied Physics, v.9, no.3, pp.S210-S212 |
125 |
원문
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Journal
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2009 |
Colloidal Templating for Producing Hollow ZnO Shells: Fabrication, Growth and Electrical Properties
Jaehyun Moon Thin Solid Films, v.517, no.14, pp.3904-3907 |
7 |
원문
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Journal
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2009 |
Fabrication of P-Type ZnO Thin Films Using Rf-Magnetron Sputter Deposition
Jun Kwan Kim Electrochemical and Solid-State Letters, v.12, no.4, pp.H109-H112 |
15 |
원문
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Journal
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2009 |
Vanadium Dioxide and Vanadium Sesquioxide Thin Films Fabricated on (0001) or (10 10)Al2O3 by Reactive RF-Magnetron Sputter Deposition and Subsequent Annealing Processes
Sun Jin Yun Japanese Journal of Applied Physics, v.48, no.4, pp.1-4 |
9 |
원문
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Journal
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2009 |
Characteristics of Metal-Oxide-Semiconductor (MOS) Device with Er Metal Gate on SiO2 Film
최철종 Microelectronics Reliability, v.49, no.4, pp.463-465 |
2 |
원문
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Journal
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2008 |
Properties of Ferroelectric P(VDF-TrFE) 70/30 Copolymer Films as a Gate Dielectric
Jung Soonwon Integrated Ferroelectrics, v.100, no.1, pp.198-205 |
23 |
원문
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Journal
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2008 |
Effect of Co3(PO4)2 coating on Li[Co0.1Ni0.15Li0.2Mn0.55]O2 cathode material for lithium rechargeable batteries
Lee Sang Hyo Journal of Power Sources, v.184, no.1, pp.276-283 |
78 |
원문
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Journal
|
2008 |
Effects of Post-growth Annealing on the Structure and Electro-optical Properties of Low-temperature Grown GaAs
Youn Doo Hyeb Journal of Applied Physics, v.103, no.12, pp.1-5 |
13 |
원문
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Journal
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2008 |
Preparation of V2O3 Thin Films by the Reduction of VO2 in a Very Low Pressure
Sun Jin Yun Electrochemical and Solid-State Letters, v.11, no.7, pp.H173-H175 |
6 |
원문
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Journal
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2007 |
Structural Change and Its Electrooptical Effects on Terahertz Radiation with Post-Growth Annealing of Low-Temperature-Grown GaAs
Youn Doo Hyeb Japanese Journal of Applied Physics, v.46, no.10, pp.6514-6518 |
1 |
원문
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Journal
|
2007 |
Thickness Effect of a Ge Interlayer on the Formation of Nickel Silicides
Choi Chel-Jong Journal of the Electrochemical Society, v.154, no.9, pp.H759-H763 |
11 |
원문
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Journal
|
2007 |
Electrical and Structural Properties of High-k Er-silicate Gate Dielectric Formed by Interfacial Reaction between Er and SiO2 Films
Choi Chel-Jong Applied Physics Letters, v.91, no.1, pp.1-3 |
17 |
원문
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Journal
|
2007 |
Comparative Analysis of VO2 Thin Films Prepared on Sapphire and SiO2/Si Substrates by the Sol-Gel Process
Chae Byung Gyu Japanese Journal of Applied Physics, v.46, no.2, pp.738-743 |
30 |
원문
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Journal
|
2007 |
Photoluminescence Characteristics of Sol–Gel Materials Prepared from Bimetallic Erbium Alkoxides Coordinated by Al or Ti
임미애 Journal of the American Ceramic Society, v.90, no.1, pp.116-119 |
3 |
원문
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Journal
|
2006 |
Charge Transport of Alkanethiol Self-Assembled Monolayers in Micro-Via Hole Devices
김태욱 Journal of Nanoscience and Nanotechnology, v.6, no.11, pp.3487-3490 |
5 |
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Journal
|
2005 |
Structural and Luminescence Characteristics of Post-Annealed ZnO Films on Si (111) in H2O Ambient
이주영 Japanese Journal of Applied Physics, v.44, no.1-7, pp.L205-L207 |
12 |
원문
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Journal
|
2003 |
Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic Contacts to AlxGa1-xAs/InGaAs (x = 0.75) Pseudomorphic High Electron Mobility Transistor
Kyoung Jin Choi Journal of the Korean Physical Society, v.43, no.2, pp.253-258 |
8 |
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