Subjects : dry etching

Articles (43)
Patents (1)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2024	Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode Lee Hun Ki JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.42, no.4, pp.1-10	2
Journal	2021	Interfacial barrier free organic-inorganic hybrid electrolytes for solid state batteries Lee Myeong Ju Energy Storage Materials, v.37, pp.306-314	58
Journal	2021	Interfacial barrier free organic-inorganic hybrid electrolytes for solid state batteries Shin Dong Ok Energy Storage Materials, v.37, pp.306-314	58
Journal	2020	Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175
Conference	2019	Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218
Journal	2019	Origin of the Dry Etch Damage in the Short-channel Oxide Thin-film Transistors for High Resolution Display Application Ji Hun Choi Thin Solid Films, v.674, pp.71-75	7
Conference	2018	A Study on the Effect of Dry Etching Damage in BCE Oxide Thin-Film Transistors Ji Hun Choi International Meeting on Information Display (IMID) 2018, pp.134-134
Journal	2018	Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17	9
Journal	2017	Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364	2
Conference	2017	Normally-off AlGaN/GaN Field Effect Transistors with Recessed Gate using Ultra-low Rate Dry Etching Conditions Kim Zin-Sig 한국 반도체 학술 대회 (KCS) 2017, pp.1-1
Conference	2016	Ultra-low Rate Dry Etching Conditions for Fabrication of Normally-off Field Effect Transistor on AlGaN/GaN Heterostructure Kim Zin-Sig International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
Conference	2014	Novel technique for PDMS micro patterning using dry etching and photolithography H.W. Kim International Microprocesses and Nanotechnology Conference (MNC) 2014, pp.1-2
Conference	2014	Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2
Conference	2014	Dual-Focus Microlens Array and Fresnel Lens Array Fabricated by Dry Etching Lee Jong-Moo Photonics West 2014, pp.301-301
Conference	2013	A Surface Micromachined MEMS Capacitive Microphone with Back-Plate Supporting Pillars Chang Han Je SENSORS 2013, pp.1-4	6
Journal	2013	Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment Jong-Won Lim Thin Solid Films, v.547, pp.106-110	10
Journal	2013	Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma Woo Jong Chang Transactions on Electrical and Electronic Materials, v.14, no.4, pp.216-220	1
Journal	2013	The Dry Etching of TiN Thin Films Using Inductively Coupled CF4/Ar Plasma Woo Jong Chang Transactions on Electrical and Electronic Materials, v.14, no.2, pp.67-70
Journal	2013	Micromachined stress-free TSV hole for AlGaN/GaN-on-Si (1 1 1) platform-based devices Sang Choon Ko Journal of Micromechanics and Microengineering, v.23, no.3, pp.1-7	3
Journal	2013	Fabrication of Dual-focus Dual-layered Microlens Lee Jong-Moo Optics Communications, v.289, pp.69-74	15
Conference	2012	Fabrication of Dual-Focus Dual-Layered Microlens Array Lee Jong-Moo Photonics Conference 2012, pp.188-189
Conference	2012	Dual-Focus Dual-Layered Microlens Array Lee Jong-Moo Opto-Electronics and Communications Conference (OECC) 2012, pp.889-890	1
Journal	2011	Dry Etching of TiN in N2/Cl2/Ar Adaptively Coupled Plasma Kim Dong -Pyo Vacuum, v.86, no.4, pp.380-385	5
Conference	2011	Highly Efficient Organic Light Emitting Diodes with NanoStructured Substrate Shin Jin Wook International Meeting on Information Display (IMIT) 2011, pp.1-2
Journal	2011	Sub-30 nm Gate Template Fabrication for Nanoimprint Lithography Using Spacer Patterning Technology Park Kun Sik Journal of Nanoscience and Nanotechnology, v.11, no.2, pp.1625-1628	4
Conference	2009	Sub-30 nm Gate Template Fabrications for Nanoimprint Lithography using Spacer Patterning Technology Park Kun Sik International Conference on Nano Science and Nano Technologya (ICNSN) 2009, pp.1-4
Journal	2009	High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators Cheong Woo-Seok Japanese Journal of Applied Physics, v.48, no.4, pp.1-15	16
Journal	2008	Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures Yoon Sung Min Microelectronic Engineering, v.85, no.12, pp.2334-2337	11
Conference	2008	Dry Etching Process for the Fabrication of Transparent InGaZnO TFTs Yoon Sung Min International Meeting on Information Display (IMID) 2008, pp.222-225	0
Journal	2008	New fabrication of a strained Si/Si1−yGey dual channel on a relaxed Si1−xGex virtual substrate using a Ge-rich layer formed by oxidation Kim Sang Hoon Applied Surface Science, v.254, no.19, pp.6025-6029	1
Conference	2007	High-Frequency Characteristics of 40Gb/s Electroabsorption Modulator-Integrated DFB Lasers: Effect of Traveling-Wave Electrode and Tilted Facet Kwon Yong-Hwan Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4	4
Journal	2007	Fabrication of Oxide TFTs with Al2O3/ZnO Gate Stacks Patterned Using a Dry Etching Method Yoon Sung Min Electrochemical and Solid-State Letters, v.11, no.2, pp.J15-J18	9
Conference	2007	Novel Process for the Electrodes of Microbolometer Ryu Hojun International Conference on Sensor Technologies and Applications (SENSORCOMM) 2007, pp.10-13	1
Journal	2007	40 Gbps Electroabsorption Modulated DFB Laser with Tilted Facet Formed by Dry Etching Choe Joong-Seon Semiconductor Science and Technology, v.22, no.7, pp.802-805	9
Conference	2007	40 Gbps Electroabsorption Modulated DFB Laser with Tilted Facet Formed by Dry Etching Choe Joong-Seon International Conference on Indium Phosphide and Related Materials (IPRM) 2007, pp.267-270	1
Journal	2007	Patterning of Parallel Nanobridge Structures by Reverse Nanostencil Lithography using an Edge-patterned Stencil Park Chan Woo Nanotechnology, v.18, no.4, pp.1-5	8
Journal	2006	Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer Jong-Won Lim Journal of the Korean Physical Society, v.49, no.3, pp.S774-S779
Journal	2006	Dry Etching of Ge2Sb2Te5 Thin Films into Nanosized Patterns Using TiN Hard Mask Yoon Sung Min Japanese Journal of Applied Physics, v.45, no.40, pp.1080-1083	21
Journal	2006	Formation of a Self-Aligned Hard Mask using Hydrogen Silsesquioxane Kiju Im Applied Physics Letters, v.88, no.15, pp.1-3	3
Journal	2006	Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process Jong-Won Lim Japanese Journal of Applied Physics, v.45, no.4B, pp.3358-3363	0
Conference	2006	Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer Jong-Won Lim 한국반도체 학술 대회 (KCS) 2006, pp.1-2
Conference	2005	Monolithic electronic nose system fabricated by post CMOS micromachining Seong-Mok Cho SENSORS 2005, pp.420-423	2
Journal	2005	A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs Jong-Won Lim ETRI Journal, v.27, no.3, pp.304-311	8

특허 검색결과
Status	Year	Patent Name	Country	Family Pat.	KIPRIS
Registered	2006	METHOD OF FABRICATING T-GATE	UNITED STATES

연구보고서 검색결과
Type	Year	Research Project	Primary Investigator	Download
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