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Subjects : cutoff frequency

  • Articles (45)
  • Patents (1)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Conference 2024 0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band   Junhyung Jeong  International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457 0 원문
Conference 2024 GaAs mHEMT Technology Achieving a High Cut-off Frequncy of 446 GHz with a Gate Length of 75 nm   Park Jongyul  International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1468-1469 0 원문
Conference 2024 Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs   Jung Hyunwook  International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444 0 원문
Journal 2024 Broadband sub-wavelength terahertz subsurface imaging using a solid-immersion lens   Da Hye Choi  Optics and Laser Technology, v.174, pp.1-9 6 원문
Conference 2023 Terahertz Multispectral Sub-Wavelength Tomography using a Solid-Immersion Lens   Da Hye Choi  International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) 2023, pp.1-2 0 원문
Conference 2022 InAlGaN/GaN HEMTs with over cut-off frequency of 160 GHz   Sungjae Chang  International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1
Journal 2021 Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications   문석호  ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592 13 원문
Journal 2021 Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors   Sungjae Chang  Crystals, v.11, no.11, pp.1-10 6 원문
Journal 2021 Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates   Kim Zin-Sig  Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 원문
Journal 2020 W‐Band MMIC chipset in 0.1‐μm mHEMT technology   Jongmin Lee  ETRI Journal, v.42, no.4, pp.549-561 6 원문
Journal 2019 Investigation of Improved Performance for Organic Rectifying Diodes via Electrical Annealing   Kang Chan-Mo  IEEE Access, v.7, pp.84082-84090 2 원문
Conference 2019 GaN Device Technology for High Voltage and RF Power Application   Hyung Seok Lee  한러 과학기술의 날 2019, pp.1-1
Journal 2017 Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing   Hyung Sup Yoon  Journal of the Korean Physical Society, v.71, no.6, pp.360-364 2 원문
Journal 2017 Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications   Jongmin Lee  Journal of the Korean Physical Society, v.71, no.6, pp.365-369 7 원문
Journal 2016 Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate   Hyung Sup Yoon  IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 28 원문
Journal 2015 DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2   Hyung Sup Yoon  Journal of the Korean Physical Society, v.67, no.4, pp.654-657 3 원문
Journal 2013 Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment   Jong-Won Lim  Thin Solid Films, v.547, pp.106-110 10 원문
Journal 2013 Application of VSI-EBG Structure to High-Speed Differential Signals for Wideband Suppression of Common-Mode Noise   Myunghoi Kim  ETRI Journal, v.35, no.5, pp.827-837 11 원문
Journal 2012 On the New Design of a 4-port TEM Waveguide with a Higher Cutoff Frequency and Wider Test Volume   Jeon Sang Bong  ETRI Journal, v.34, no.4, pp.621-624 6 원문
Journal 2011 Dependences of the Characteristics of an InGaP/GaAs HBT for Applications in Power Amplifiers on the Structural Parameters   Min Byoung-Gue  Journal of the Korean Physical Society, v.59, no.21, pp.435-438 2 원문
Conference 2010 Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications   Woojin Chang  대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987
Journal 2010 Partial EBG Structure with DeCap for Ultra-wideband Suppression of Simultaneous Switching Noise in a High-Speed System   Kwon Jong Hwa  ETRI Journal, v.32, no.2, pp.265-272 19 원문
Journal 2009 Fabrication of Transimpedance Amplifier Module and Post-Amplifier Module for 40 Gb/s Optical Communication Systems   Jongmin Lee  ETRI Journal, v.31, no.6, pp.749-754 3 원문
Conference 2009 A 0.13μm CMOS UWB Receiver for Impulse Radio and MB-OFDM Based WPAN Applications   Lee. Young-Jae  European Microwave Integrated Circuits Conference (EuMIC) 2009, pp.37-40
Conference 2009 Modified-Nauta Operational Transconductance Amplifier for 400 MHz High-Q VHF Filter   Park Jungwoo  Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2009, pp.132-135 2 원문
Journal 2008 A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET   Chang-Geun Ahn  Materials Science and Engineering B, v.147, no.2-3, pp.183-186 4 원문
Conference 2007 Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT   Hokyun Ahn  Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4 0 원문
Journal 2007 Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates   Hyung Sup Yoon  Journal of the Korean Physical Society, v.50, no.3, pp.889-892 4 원문
Journal 2007 Packaged Broadband Amplifier for 40-Gb/s Optical Transmission Systems in InP HBT Technology   Jongmin Lee  Journal of the Korean Physical Society, v.50, no.3, pp.871-874 2 원문
Journal 2006 Dependence of the DC and the RF Characteristics of InGaAs /InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness   Kim Yong Won  Journal of the Korean Physical Society, v.49, no.3, pp.1202-1206
Conference 2006 A Ka-Band Coaxial-to-Waveguide Transition Including Coaxial Airline   Youn Sub Noh  AIAA International Communications Satellite Systems Conference (ICSSC) 2006, pp.1-4
Journal 2006 Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors   Shim Jae Yeob  Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 2 원문
Journal 2006 Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process   Jong-Won Lim  Japanese Journal of Applied Physics, v.45, no.4B, pp.3358-3363 0 원문
Journal 2006 Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies   Lee Seung-Yun  Solid-State Electronics, v.50, no.3, pp.333-339 4 원문
Conference 2006 Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer   Jong-Won Lim  한국반도체 학술 대회 (KCS) 2006, pp.1-2
Conference 2006 Influence of T-gate shape on the device characteristics in 0.12um AlGaAs/InGaAs PHEMT   Hokyun Ahn  한국 반도체 학술 대회 (KCS) 2006, pp.1-2
Journal 2005 DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs   Shim Jae Yeob  ETRI Journal, v.27, no.6, pp.685-690 5 원문
Conference 2005 A Comparative Study on the DC, RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors with Different Collector Layer Thickness   Kim Yong Won  Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4 0 원문
Conference 2005 Receiver Block Design for Ultrawideband Applications   Park Bong Hyuk  Vehicular Technology Conference (VTC) 2005 (Fall), pp.1372-1375 0 원문
Journal 2005 A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs   Jong-Won Lim  ETRI Journal, v.27, no.3, pp.304-311 8 원문
Journal 2005 An X-Band Carbon-Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator   김영기  ETRI Journal, v.27, no.1, pp.75-80 5 원문
Journal 2004 The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs   Youn Doo Hyeb  IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789 15 원문
Journal 2003 High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz   Youn Doo Hyeb  Electronics Letters, v.39, no.6, pp.566-567 15 원문
Conference 2002 RF performance tradeoffs of SiGe HBT fabricated by reduced pressure chemical vapor deposition   Bongki Mheen  International Microwave Symposium (IMS) 2002, pp.413-416 3 원문
Journal 2001 Design of high-temperature superconducting low-pass filter for broad-band harmonic rejection   곽민환  IEEE Transactions on Applied Superconductivity, v.11, no.2, pp.4023-4026 9 원문
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2020 RECEIVER FOR REMOVING NOISE GENERATED IN HUMAN BODY COMMUNICATION UNITED STATES
연구보고서 검색결과
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