Subject

Subjects : GaN-Based

  • Articles (49)
  • Patents (0)
  • R&D Reports (8)
논문 검색결과
Type Year Title Cited Download
Journal 2025 Demonstration of GaN-Based HEMTs Using Extremely Thin h-BN Passivation Layer and Air Spacer for the RF Performance Improvement   Sungjae Chang  Advanced Electronic Materials, v.11, no.20, pp.1-10 0 원문
Journal 2025 Spatial Distribution Control of Room-Temperature Single Photon Emitters in the Telecom Range from GaN Thin Films Grown on Patterned Sapphire Substrates   김혜민  Advanced Quantum Technologies, v.8, no.2, pp.1-6 0 원문
Conference 2024 Employment of 3 nm-thick h-BN passivation layer for RF performance improvement in GaN-based HEMTs   Sungjae Chang  International Workshop on Nitride Semiconductors (IWN) 2024, pp.1-2
Journal 2024 H2HSR: Hologram-to-Hologram Super-Resolution with Deep Neural Network   노유찬  IEEE Access, v.12, pp.90900-90914 2 원문
Conference 2024 Impact of T-gate head size on the device performance and radiation tolerance in LG = 0.15 m GaN-based HEMTs   Sungjae Chang  International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2024, pp.283-283
Conference 2023 Impact of Parasitic Gate Capacitance on RF Performance in GaN-based HEMTs for X-band Applications   Sungjae Chang  The Electrochemical Society (ECS) Meeting 2023, pp.1-1
Conference 2023 Threshold Voltage Shift Mechanisms Induced by γ-ray and Proton Irradiation in GaN-based MIS-HEMTS for Satellite Communication System   Sungjae Chang  한국통신학회 종합 학술 발표회 (하계) 2023, pp.1-3
Journal 2023 Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer   이준혁  Micromachines, v.14, no.6, pp.1-10 5 원문
Journal 2023 Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer   Jeonggil Kim  Micromachines, v.14, no.6, pp.1-10 5 원문
Journal 2023 Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator   Sungjae Chang  Nanomaterials, v.13, no.5, pp.1-13 2 원문
Journal 2023 25–31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications   안현배  IEEE Microwave and Wireless Technology Letters, v.33, no.1, pp.47-50 15 원문
Conference 2022 Mechanisms of Device Degradation Induced by Proton Irradiation in the GaN-based MIS-HEMTs   Sungjae Chang  International Conference on Accelerators and Beam Utilizations (ICABU) 2022, pp.45-45
Conference 2022 Conditional GAN based Collaborative Filtering with Data Augmentation for Cold-Start User   Sungpil Woo  International Conference on Information and Communication Technology Convergence (ICTC) 2022, pp.1756-1761 1 원문
Conference 2022 Conditional GAN based Collaborative Filtering with Data Augmentation for Cold-Start User   Muhammad Zubair  International Conference on Information and Communication Technology Convergence (ICTC) 2022, pp.1756-1761 1 원문
Conference 2022 Impact of T-Gate Head Size on Frequency Properties in GaN-based HEMTs   Sungjae Chang  International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1
Journal 2021 Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors   Sungjae Chang  Crystals, v.11, no.11, pp.1-10 9 원문
Conference 2021 Recent Progress of GaN-based Semiconductor Device Technologies in ETR   Hyung Seok Lee  Europe-Korea Conference on Science and Technology (EKC) 2021, pp.1-1
Conference 2021 On Constructing Vessel Dataset Structure Using GAN-based Data Augmentation   Oh Ah Reum  International Conference on Information and Communication Technology Convergence (ICTC) 2021, pp.1700-1702 1 원문
Journal 2021 Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates   Kim Zin-Sig  Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 원문
Conference 2021 Study of Threshold Voltage Shift Mechanism Corresponding to the Proton Radiation Energy in GaN-based MIS-HEMTs   Sungjae Chang  대한전자공학회 학술 대회 (하계) 2021, pp.93-96
Journal 2020 Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer   Sungjae Chang  Nanomaterials, v.10, no.11, pp.1-11 14 원문
Conference 2020 G03-1728 - Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs   Sungjae Chang  PRiME 2020, pp.1-3
Conference 2020 Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs   Sungjae Chang  PRiME 2020 (ECS Transactions 98), v.98, no.5, pp.519-526 3 원문
Conference 2020 Unmanned Aerial Vehicle Identification Success Probability with LoRa Communication Approach   Jinhyung Oh  International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC) 2020, pp.1-6 6 원문
Journal 2020 Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact   도재원  Journal of the Korean Physical Society, v.76, no.9, pp.837-842 0 원문
Journal 2020 Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact   Jung Hyunwook  Journal of the Korean Physical Society, v.76, no.9, pp.837-842 0 원문
Conference 2020 Thermal Behavior of AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrate   Kim Zin-Sig  한국 반도체 학술 대회 (KCS) 2020, pp.783-783
Journal 2019 Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs   Sungjae Chang  ECS Journal of Solid State Science and Technology, v.8, no.12, pp.245-248 11 원문
Journal 2019 Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect   황인태  Applied Sciences, v.9, no.17, pp.1-13 6 원문
Journal 2019 Multiple flow‐based knowledge transfer via adversarial networks   Yeo Doyeob  Electronics Letters, v.55, no.18, pp.989-992 4 원문
Conference 2019 Improvement of Proton Radiation Hardness through Bi-layer Gate Insulating System in GaN-based MIS-HEMTs   Sungjae Chang  Internatinoal Conference on Nitride Semiconductors (ICNS) 2019, pp.119-119
Journal 2019 GaN MIS-HEMT PA MMICs for 5G Mobile Devices   Kim Seong-Il  Journal of the Korean Physical Society, v.74, no.2, pp.196-200 5 원문
Journal 2018 High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier   이준혁  IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186 41 원문
Journal 2018 Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation   Sungjae Chang  ECS Journal of Solid State Science and Technology, v.7, no.6, pp.86-90 10 원문
Journal 2018 Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching   손동혁  Solid-State Electronics, v.141, pp.7-12 9 원문
Journal 2018 Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching   조영우  Solid-State Electronics, v.141, pp.7-12 9 원문
Conference 2018 스트레스가 질화갈륨 기반 HEMT 소자의 특성에 미치는 영향   Sungjae Chang  한국 반도체 학술 대회 (KCS) 2018, pp.648-648
Journal 2018 Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric   Maruf A. Bhuiyan  IEEE Transactions on Nuclear Science, v.65, no.1, pp.46-52 26 원문
Conference 2016 Total Ionizing Dose Effects on GaN-based HEMTs and MOSHEMTs: Effects of Channel Thickness and Epitaxial MgCaO as Gate Dielectric   M. Bhuiyan  Semiconductor Interface Specialists Conference (SISC) 2016, pp.1-2
Journal 2016 Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate   Hyung Sup Yoon  IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 29 원문
Journal 2016 Sputter Deposition of Sn-doped ZnO/Ag/Sn-doped ZnO Transparent Contact Layer for GaN LED Applications   Rae-Man Park  Materials Letters, v.180, pp.72-76 14 원문
Journal 2015 A Simplified Circuit Model for GaN-Based MIM Capacitor   Lee Sang-Heung  Information : An International Interdisciplinary Journal, v.18, no.4, pp.1249-1254 0
Conference 2014 Anticrossing Effect in GaN-Based Laser Diodes and Optimum Waveguide Structures in Ultraviolet Laser Diodes   Dong Churl Kim  International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.84-84
Conference 2014 An Equivalent Circuit Model for GaN-based MIM Capacitor   Lee Sang-Heung  International Symposium on Advanced and Applied Convergence (ISAAC) 2014, pp.1-4
Conference 2014 Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess   Park Young Rak  International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2
Journal 2014 Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate   Hokyun Ahn  Solid-State Electronics, v.95, pp.42-45 18 원문
Journal 2013 Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures   Bae Sung-Bum  Microelectronic Engineering, v.109, pp.10-12 6 원문
Conference 2013 Effects of Various Field Plates for Normally-Off GaN MISFETs   Woojin Chang  International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2013, pp.332-333
Journal 2011 Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures   류한열  IEEE Photonics Technology Letters, v.23, no.24, pp.1866-1868 25 원문
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연구보고서 검색결과
Type Year Research Project Primary Investigator Download
Annual Report 2024 Development of GaN-based Process Technology and RF Components for 28GHz 5G Base Stations Dong Min Kang
Annual Report 2023 Development of GaN-based Process Technology and RF Components for 28GHz 5G Base Stations Dong Min Kang
Final Report 2023 Develoment of GaN-based Power Module for Hydrogen Generation to Applying on Desalination System of Seewater Kim Zin-Sig
Annual Report 2022 Development of GaN-based Process Technology and RF Components for 28GHz 5G Base Stations Dong Min Kang
Annual Report 2021 Development of GaN-based Process Technology and RF Components for 28GHz 5G Base Stations Dong Min Kang
Final Report 2018 Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations Jong-Won Lim
Annual Report 2017 Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations Jong-Won Lim
Annual Report 2016 Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations Jong-Won Lim