Subjects : Current-voltage

Articles (51)
Patents (0)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2024	Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode Lee Hun Ki JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.42, no.4, pp.1-10	2
Journal	2022	A robust and scalable electron transparent multi-stacked graphene gate for effective electron-beam convergence in field emission digital X-ray sources Kim Seong Jun Applied Surface Science, v.604, pp.1-9	3
Journal	2022	A robust and scalable electron transparent multi-stacked graphene gate for effective electron-beam convergence in field emission digital X-ray sources Yujung Ahn Applied Surface Science, v.604, pp.1-9	3
Journal	2021	Application of Quantum Dot Down-Conversion Layer in Thin-Film Solar Cells to Increase Short-Wavelength Spectral Response Jonghun Yu ECS Journal of Solid State Science and Technology, v.10, no.5, pp.1-6	2
Journal	2020	Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9	5
Journal	2018	Heterojunction Internal Photoemission of λ ∼ 2.8 μm by Ge/Si Core/Shell Nanowires Suh Dongwoo IEEE Transactions on Electron Devices, v.65, no.12, pp.5406-5411	0
Journal	2018	NDR-effect Vertical-illumination-type Ge-on-Si Avalanche Photodetector Kim Gyungock Optics Letters, v.43, no.22, pp.5583-5586	21
Journal	2018	Observation of Negative Differential Resistance in Mesoscopic Graphene Oxide Devices 이인렬 Scientific Reports, v.8, pp.1-9	26
Journal	2018	Observation of Negative Differential Resistance in Mesoscopic Graphene Oxide Devices Servin Rathi Scientific Reports, v.8, pp.1-9	26
Journal	2018	Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors Yeonwha Oh Science of Advanced Materials, v.10, no.4, pp.518-521
Conference	2016	Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate Jongmin Lee 한국 반도체 학술 대회 (KCS) 2016, pp.1-2
Journal	2014	Influence of a Self-Assembled Monolayer on Indium-Zinc-Oxide Semiconductor Thin-Film Transistors Yong Suk Yang Journal of the Korean Physical Society, v.65, no.10, pp.1555-1558	1
Journal	2014	Post-Annealing Effect on the Reactively Sputter-Grown CIGS Thin Films and its Influence to Solar Cell Performance 김제하 Current Applied Physics, v.14, no.Supplement 1, pp.S63-S68	21
Journal	2013	The Observation of Electrical Hysteric Behavior in Synthesized V2O5 Nanoplates by Recrystallization 김창희 Journal of Nanomaterials, v.2013, pp.1-8	4
Journal	2013	Transparent Non-Volatile Memory Device Using Silicon Quantum Dots Rae-Man Park Electronic Materials Letters, v.9, no.4, pp.467-469	6
Journal	2013	Analytic Treatment of the Distributed Resistance of the Window Layer in Solar Cells with Parallel Grids Lee Kyu-Seok Progress in Photovoltaics : Research and Applications, v.21, no.2, pp.195-201	5
Journal	2012	Organic Nonvolatile Memory Devices Fabricated by Using an Inkjet Printing Method Yong Suk Yang Journal of the Korean Physical Society, v.60, no.10, pp.1504-1507	6
Journal	2011	Green Emission of Silicon Quantum Dot Light-emitting Diodes Caused by Enhanced Carrier Injection 김백현 Journal of the Korean Physical Society, v.59, no.3, pp.L2183-L2186	1
Journal	2011	Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes Tae-Youb Kim Japanese Journal of Applied Physics, v.50, no.4 PART 2, pp.1-3	4
Journal	2010	Electrical Quadruple Hysteresis in Pd-Doped Vanadium Pentoxide Nanowires Due to Water Adsorption Kim Byunghoon Science and Technology of Advanced Materials, v.11, no.6, pp.1-6	4
Journal	2010	Analysis of the Current-Voltage Curves of a Cu(In,Ga)Se2 Thin-Film Solar Cell Measured at Different Irradiation Conditions Lee Kyu-Seok Journal of the Optical Society of Korea, v.14, no.4, pp.321-325	8
Journal	2010	Two-dimensional ZnO–NiO macroporous arrays: Fabrication, structure and electrical properties Jaehyun Moon Electrochimica Acta, v.55, no.22, pp.6849-6856	8
Journal	2010	Temperature Dependency and Carrier Transport Mechanisms of Ti/p-Type InP Schottky Rectifiers V. Janardhanam Journal of Alloys and Compounds, v.504, no.1, pp.146-150	87
Journal	2010	Optical and Electrical Properties of AlxTi1-xO Films Lim Jungwook Journal of the Korean Physical Society, v.56, no.1, pp.96-99	3
Journal	2010	Low Power Consumption and High Sensitive NO2 Micro Gas Sensor based on Co-planar Micro-heater fabricated by using CMOS-MEMS Process Moon Seungeon Journal of the Korean Physical Society, v.56, no.1, pp.434-438	12
Journal	2009	Optical and Electrical Properties of TixSi1-xOy Films Lim Jungwook ETRI Journal, v.31, no.6, pp.675-679	10
Conference	2009	Electrical and Optical Properties of AlTiO Films Lim Jungwook 한국반도체 학술 대회 (KCS) 2009, pp.1-2
Journal	2009	Fabrication and NO2 Sensing Characteristics of an In2O3 Nanowire Gas Sensor Moon Seungeon Journal of the Korean Physical Society, v.54, no.2, pp.830-834
Journal	2009	Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail State Jaeheon Shin Journal of the Korean Physical Society, v.54, no.1, pp.527-530	24
Journal	2008	Energy Gap Modulation in V2O5 Nanowires by Gas Adsorption Kim Byunghoon Applied Physics Letters, v.93, no.23, pp.1-3	29
Journal	2008	Quantum-dot light-emitting diodes utilizing CdSe∕ZnS nanocrystals embedded in TiO2 thin film 강승희 Applied Physics Letters, v.93, no.19, pp.1-3	30
Journal	2008	Electrical Evidence for the Encapsulation of C60 Inside a Carbon Nanotube: Random Telegraph Signal and Hysteric Current-voltage Characteristics Yu Han Young Physical Review B : Condensed Matter and Materials Physics, v.78, no.15, pp.1-5	5
Journal	2008	Electrical Characterization of ZnO Single Nanowire Device for Chemical Sensor Application Kim Eunkyoung Journal of Nanoscience and Nanotechnology, v.8, no.9, pp.4698-4701	8
Journal	2008	Voltage-Regulating Properties of AlxTi1_xOy Films Exhibiting an Abrupt Current Jump Lim Jungwook Electrochemical and Solid-State Letters, v.11, no.11, pp.G55-G57	0
Journal	2008	Micro X-Ray Diffraction Study in VO2 Films - Separation between Metal-Insulator Transition and Structural Phase Transition Kim Bongjun Physical Review B : Condensed Matter and Materials Physics, v.77, no.23, pp.1-18	126
Journal	2008	Schottky Barrier Heights of n/p-type Erbium-silicided Schottky Diodes Jun Myung Sim Microelectronic Engineering, v.85, no.5-6, pp.1395-1398	5
Journal	2008	Organic Field-effect Transistors with Thermal-cured Polyacrylate Gate Dielectric Films Gi Heon Kim Thin Solid Films, v.516, no.7, pp.1574-1577	4
Journal	2008	Analysis of Temperature-dependent Barrier Heights in Erbium-silicided Schottky Diodes Jun Myung Sim Journal of Vacuum Science and Technology B, v.26, no.1, pp.137-140	8
Journal	2007	A statistical method for determining intrinsic electronic transport properties of self-assembled alkanethiol monolayer devices 송현욱 Applied Physics Letters, v.91, no.25, pp.1-3	23
Journal	2007	Fabrication and Atmospheric-Pressure-Dependent Electrical Properties of a ZnO Nanowire Device Kim Eunkyoung Journal of the Korean Physical Society, v.51, pp.S170-S173	15
Journal	2007	Electrical and microstructural properties of low‐resistance Ti/Re/Au ohmic contacts to n‐type GaN V. Rajagopal Reddy Physica Status Solidi (A), v.204, no.10, pp.3392-3397	0
Journal	2007	Statistical analysis of electronic properties of alkanethiols in metal–molecule–metal junctions 김태욱 Nanotechnology, v.18, no.31, pp.1-8	119
Journal	2007	Degradation Analysis in Asymmetric Sampled Grating Distributed Feedback Laser Diodes 주한성 Microelectronics Journal, v.38, no.6-7, pp.740-745	0
Journal	2007	Intermolecular Chain-to-Chain Tunneling in Metal−Alkanethiol−Metal Junctions 송현욱 Journal of the American Chemical Society, v.129, no.13, pp.3806-3807	89
Conference	2006	Atmosphere Pressure Dependent Electrical Properties of the ZnO Nanowire Transistors Kim Eunkyoung Nanotechnology Materials and Devices Conference (NMDC) 2006, pp.1-2
Journal	2006	N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS Jang Moon Gyu IEEE Transactions on Electron Devices, v.53, no.8, pp.1821-1825	28
Journal	2006	Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations Yoon Sung Min IEEE Electron Device Letters, v.27, no.6, pp.445-447	112
Journal	2003	Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications Jang Moon Gyu IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209	16
Journal	2003	Transport and noise properties of ramp-edge junction D.H. Kim IEEE Transactions on Applied Superconductivity, v.13, no.2, pp.3738-3741	0
Journal	2002	Microstructure and Electrical Properties of Low Temperature Processed Ohmic Contacts to p-Type GaN Miran Park ETRI Journal, v.24, no.5, pp.349-359	11
Journal	2001	Fabrication of RS flip-flops using Y-Ba-Cu-O ramp-edge junctions and their operation J. H. Park IEEE Transactions on Applied Superconductivity, v.11, no.1, pp.932-935	4

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