Subject

Subjects : Nonvolatile memory (NVM)

  • Articles (57)
  • Patents (5)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Conference 2022 CapOS: Capacitor Error Resilience for Energy Harvesting Systems   최종욱  International Conference on Embedded Software (EMSOFT) 2022 / IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, pp.4539-4550 14 원문
Conference 2022 CapOS: Capacitor Error Resilience for Energy Harvesting Systems   Joe Hyunwoo  International Conference on Embedded Software (EMSOFT) 2022 / IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, pp.4539-4550 14 원문
Journal 2022 Improvement in nonvolatile memory operations for metal-ferroelectric-insulator-semiconductor capacitors using HfZrO2 and ZrO2 thin films as ferroelectric and insulator layers   Yeriaron Kim  Journal of Physics D : Applied Physics, v.55, no.33, pp.1-9 1 원문
Journal 2022 Double-Gate and Body-Contacted Nonvolatile Oxide Memory Thin-Film Transistors for Fast Erase Programming   Yang Jong-Heon  IEEE Transactions on Electron Devices, v.69, no.1, pp.120-126 1 원문
Journal 2021 Fast and Secure Global-Heap for Memory-Centric Computing   Cha Myung Hoon  Journal of Supercomputing, v.77, no.11, pp.13262-13291 1 원문
Journal 2020 Ferroelectric Switching in Trilayer Al2O3/HfZrOx/Al2O3 Structure   Im Solyee  Micromachines, v.11, no.10, pp.1-10 9 원문
Journal 2020 Trend of Intel Nonvolatile Memory Technology   Lee Yong Seob  전자통신동향분석, v.35, no.3, pp.55-65 원문
Conference 2019 Achieving Stagnation-Free Intermittent Computation with Boundary-Free Adaptive Execution   최종욱  Real-Time and Embedded Technology and Applications Symposium (RTAS) 2019, pp.331-344 44 원문
Conference 2018 Nonvolatile Memory Devices of ReS2 Nanosheets- Polyvinylalcohol Composites   Junjae Yang  International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2018, pp.1-1
Journal 2018 Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface   Kim Tae Yoon  ACS Applied Materials & Interfaces, v.10, no.31, pp.26405-26412 14 원문
Journal 2018 Solution-Processed Flexible NiO Resistive Random Access Memory Device   김수정  Solid-State Electronics, v.142, pp.56-61 9 원문
Journal 2016 Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption   김경아  IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401 5 원문
Journal 2016 Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption   Byun Chunwon  IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401 5 원문
Journal 2015 Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate   Soon-Won Jung  Journal of Vacuum Science and Technology B, v.33, no.5, pp.1-4 18 원문
Conference 2015 Flexible Nonvolatile Memory Transistors Using IGZO-Channel and Organic Ferroelectric Polymer P(VDF-TrFE) Fabricated on Elastomer Substrate   Soon-Won Jung  European Materials Research Society (E-MRS) Meeting 2015 (Spring), pp.1-1
Journal 2015 Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer   Soon-Won Jung  Organic Electronics, v.16, pp.46-53 50 원문
Journal 2013 Nonvolatile memory performance improvements for solution-processed thin-film transistors with composition-modified In–Zn–Ti–O active channel and ferroelectric copolymer gate insulator   박준용  Organic Electronics, v.14, no.9, pp.2148-2157 7 원문
Conference 2012 A Non-Volatile Memory Management Scheme for Automotive Electronic Control Units   Ju Seok Shin  International Conference on Connected Vehicles and Expo (ICCVE) 2012, pp.237-238 2 원문
Conference 2012 Printed Indium Zinc Oxide Nonvolatile Memory Thin-film Transistors with P(VDF-TrFE) Gate Insulator     Asian Meeting on Ferroelectrics (AMF) 2012, pp.1-1
Conference 2012 Nonvolatile Memory Operations of Solution-Processed In-Zn-Ti-O Thin-Film Transistors with Ferroelectric Copolymer Gate Insulator     MRS Meeting 2012 (Fall), pp.1-1
Conference 2012 Transparent Nonvolatile Memory Device using Silicon Quantum Dots   Rae-Man Park  International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1
Conference 2012 Nonvolatile Memory Thin-Film Transistors using Organic Ferroelectric Gate Insulator     Optics+Photonics 2012, pp.1-1
Conference 2012 Organic Nonvolatile Memory TFTs with P(VDF-TrFE) Dielectrics on Plastic Substrate   Soon-Won Jung  International Conference on Solid Films and Surfaces (ICSFS) 2012, pp.1-1
Journal 2012 Organic Nonvolatile Memory Devices Fabricated by Using an Inkjet Printing Method   Yong Suk Yang  Journal of the Korean Physical Society, v.60, no.10, pp.1504-1507 6 원문
Journal 2011 Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory   손대호  Thin Solid Films, v.519, no.18, pp.6174-6177 0 원문
Journal 2011 Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor   Yoon Sung Min  IEEE Transactions on Electron Devices, v.58, no.7, pp.2135-2142 21 원문
Journal 2011 Self-Aligned Formation of Nanoscale Phase Change Materials for Nonvolatile Memory Application   이승윤  Japanese Journal of Applied Physics, v.50, no.6 PART 2, pp.1-5 0 원문
Journal 2011 Bending Characteristics of Ferroelectric Poly(Vinylidene Fluoride Trifluoroethylene) Capacitors Fabricated on Flexible Polyethylene Naphthalate Substrate   Yoon Sung Min  Current Applied Physics, v.11, no.3 SUPPL., pp.S219-S224 15 원문
Journal 2011 “See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel   Yoon Sung Min  Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499 2 원문
Journal 2011 Nonvolatile Memory Thin-Film Transistors Using an Organic Ferroelectric Gate Insulator and an Oxide Semiconducting Channel   Yoon Sung Min  Semiconductor Science and Technology, v.26, no.3, pp.1-25 42 원문
Journal 2010 Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications   Kim Jongyun  Nano Letters, v.10, no.11, pp.4381-4386 547 원문
Journal 2010 Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications   Hu Young Jeong  Nano Letters, v.10, no.11, pp.4381-4386 547 원문
Journal 2010 Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)   Yoon Sung Min  Organic Electronics, v.11, no.11, pp.1746-1752 18 원문
Journal 2010 Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices   정후영  Advanced Functional Materials, v.20, no.22, pp.3912-3917 175 원문
Journal 2010 Nonvolatile Memory Organic Field Effect Transistor Induced by the Steric Hindrance Effects of Organic Molecules   Jung Mi Hee  Journal of Materials Chemistry, v.20, no.37, pp.8016-8020 25 원문
Conference 2010 Flexible Nonvolatile Memory Thin-Film Transistors Using Oxide Semiconductor Active Channel and Organic Ferroelectric Gate Insulator   윤성민  Asian Meeting on Ferroelectricity (AMF) 2010 / Asian Meeting on Electroceramics (AMEC) 2010, pp.321-321
Journal 2010 Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer   Yoon Sung Min  Journal of the Electrochemical Society, v.157, no.7, pp.H771-H778 3 원문
Journal 2010 Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors   Yoon Sung Min  Japanese Journal of Applied Physics, v.49, no.4 PART 2, pp.1-6 20 원문
Journal 2010 Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C   Yoon Sung Min  Advanced Functional Materials, v.20, no.6, pp.921-926 108 원문
Journal 2010 Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell   Yoon Sung Min  IEEE Electron Device Letters, v.31, no.2, pp.138-140 14 원문
Journal 2010 Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator   Yoon Sung Min  Electrochemical and Solid-State Letters, v.13, no.5, pp.H141-H143 17 원문
Conference 2010 Fabrication and Characterization of “See-Through” Nonvolatile Memory Transistors Using Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) and Transparent Oxide Semiconductor   윤성민  한국 반도체 학술 대회 (KCS) 2010, pp.61-62
Journal 2009 Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer   Yoon Sung Min  Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6 32 원문
Conference 2009 Device Design Schemes and Electrical Characterization of Nonvolatile Memory Thin-Film Transistors with the Gate Structure of Al/P(VDF-TrFE)/Al2O3/ZnO   Yoon Sung Min  International Conference on Solid State Devices and Materials (SSDM) 2009, pp.280-281
Journal 2009 Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications   Yoon Sung Min  Japanese Journal of Applied Physics, v.48, no.9, pp.1-4 3 원문
Journal 2009 Improvement of operational stability in SET states of phase-change-type nonvolatile memory devices using Sb-rich phase of Ge–Sb–Te alloys   Yoon Sung Min  Solid-State Electronics, v.53, no.5, pp.557-561 6 원문
Conference 2009 Characterization of P(VDF-TrFE) Copolymer Films with Al2O3 Buffer Layer for Nonvolatile Memory Applications   Jung Soonwon  한국반도체 학술 대회 (KCS) 2009, pp.1-2
Journal 2008 Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures   Yoon Sung Min  Microelectronic Engineering, v.85, no.12, pp.2334-2337 11 원문
Journal 2008 Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti-Si-N Heating Layers   Yoon Sung Min  Journal of the Electrochemical Society, v.155, no.6, pp.H421-H425
Journal 2007 Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films   Yoon Sung Min  Japanese Journal of Applied Physics, v.46, no.11, pp.7225-7231 17 원문
Journal 2007 Nanoscale Observations of the Operational Failure for Phase-change-type Nonvolatile Memory Devices using Ge2Sb2Te5 Chalcogenide Thin Films   Yoon Sung Min  Applied Surface Science, v.254, no.1, pp.316-320 50 원문
Journal 2007 Silicon-based Thin Films as Bottom Electrodes in Chalcogenide Nonvolatile Memories   Lee Seung-Yun  Applied Surface Science, v.254, no.1, pp.312-315 3 원문
Journal 2007 Time Dependent Resistance Change of Amorphous Phase in Phase-Change Nonvolatile Memories   Yoon Sung Min  Integrated Ferroelectrics, v.93, no.1, pp.83-89 2 원문
Journal 2007 Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5   Yoon Sung Min  Japanese Journal of Applied Physics, v.46, no.4, pp.L99-L102 18 원문
Journal 2006 Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations   Yoon Sung Min  IEEE Electron Device Letters, v.27, no.6, pp.445-447 112 원문
Conference 2005 Research and Development on Next-Generation Nonvolatile Memory in ETRI   Byoung Gon Yu  Symposium on Semiconductors and Integrated Circuits Technology, pp.1-4
Journal 2005 Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications   Yoon Sung Min  Japanese Journal of Applied Physics, v.44, no.24-27, pp.L869-L872 36 원문
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2010 NONVOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME UNITED STATES
Registered 2013 THE TRANSPARENT NON-VOLATILE MEMORY CELL COMPOSED OF THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR AND MEMORY TRANSISTOR USING ORGANIC FERROELECTRIC THIN FILM AND THE MANUFACTURING METHOD THEREOF UNITED STATES
Registered 2008 PHASE-CHANGE NONVOLATILE MEMORY DEVICE USING Sb-Zn ALLOY AND MANUFACTURING METHOD THEREOF UNITED STATES
Registered 2009 TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME UNITED STATES
Registered 2012 TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME UNITED STATES
연구보고서 검색결과
Type Year Research Project Primary Investigator Download
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