Subjects : gate bias

Articles (43)
Patents (0)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Conference	2024	An 8.9-17.3 GHz Low Noise Amplifier in Enhancement-Mode GaAs 0.15-um pHEMT process Kong Sunwoo Asia-Pacific Microwave Conference (APMC) 2024, pp.1-3	0
Journal	2024	Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography Sung Chihun IEEE Electron Device Letters, v.45, no.6, pp.1020-1023	1
Conference	2023	Oxide Semiconductor Thin-Film Transistors with Deep Submicron Channel Fabricated with Hyperlithography Sung Chihun Society for Information Display (SID) International Symposium 2023, pp.692-694	0
Journal	2022	Effects of DC and AC Stress on the VT Shift of AlGaN/GaN MIS-HEMTs Kang Soo Cheol Current Applied Physics, v.39, pp.128-132	0
Journal	2021	Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction Lim Jungwook Materials, v.14, no.24, pp.1-8	4
Journal	2020	Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9	5
Journal	2020	A dual‐path high linear amplifier for carrier aggregation Kang Dongwoo ETRI Journal, v.42, no.5, pp.773-780	1
Journal	2020	Transparent Phototransistor with High Responsivity, Sensitivity, and Detectivity from Heterojunction Metal Oxide Semiconductors 이종찬 Applied Physics Letters, v.117, no.11, pp.1-5	18
Journal	2019	GaN MIS-HEMT PA MMICs for 5G Mobile Devices Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200	5
Journal	2017	Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/GaN HFET Minki Kim ETRI Journal, v.39, no.2, pp.292-299	5
Journal	2017	Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT Jung Hyunwook ECS Journal of Solid State Science and Technology, v.6, no.4, pp.184-186	1
Journal	2017	Hopping Conduction and Random Telegraph Signal in an Exfoliated Multilayer MoS2 field-effect Transistor 리리준 Nanotechnology, v.28, no.7, pp.1-7	6
Journal	2015	Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning Cho Sung Haeng IEEE Transactions on Electron Devices, v.62, no.11, pp.3653-3657	37
Journal	2015	Power Trench Gate MOSFET with an Integrated 6-Pack Configuration for a 3-Phase Inverter Won Jong Il Journal of the Korean Physical Society, v.67, no.7, pp.1214-1221	2
Journal	2015	Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process Kim Jeong-Jin Japanese Journal of Applied Physics, v.54, no.3, pp.1-3	1
Conference	2015	The Highly Stable InGaZnO TFTs Deposited by High Density Plasma Sputtering Cho Sung Haeng International Thin-Film Transistor Conference (ITC) 2015, pp.17-18
Conference	2014	33.3: High Mobility and Highly Stable Aluminum‐doped Indium Zinc Tin Oxide Thin‐Film Transistors Cho Sung Haeng Society for Information Display (SID) International Symposium 2014, v.45, no.1, pp.473-475	5
Journal	2014	CMOS Doherty Amplifier With Variable Balun Transformer and Adaptive Bias Control for Wireless LAN Application Nam Sik Ryu IEEE Journal of Solid-State Circuits, v.49, no.6, pp.1356-1365	35
Journal	2014	Influence of Gate Dielectric/Channel Interface Engineering on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Cho Sung Haeng Physica Status Solidi (A), v.211, no.9, pp.2126-2133	21
Conference	2014	Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1
Journal	2012	Effect of In-Ga-Zn-O Active Layer Channel Composition on Process Temperature for Flexible Oxide Thin-film Transistors 박준용 Journal of Vacuum Science and Technology B, v.30, no.4, pp.1-5	20
Journal	2011	Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance Yang Shinhyuk IEEE Electron Device Letters, v.32, no.12, pp.1692-1694	60
Conference	2011	Drain Bias Induced Instability Characteristics in Oxide Thin Film Transistors Yang Shinhyuk International Meeting on Information Display (IMIT) 2011, pp.115-116
Journal	2011	Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory 손대호 Thin Solid Films, v.519, no.18, pp.6174-6177	0
Journal	2011	Enhanced Bias Illumination Stability of Oxide Thin Film Transistor through Insertion of Ultrathin Positive Charge Barrier into Active Material Oh Himchan Applied Physics Letters, v.99, no.2, pp.1-3	36
Journal	2011	Light Response of Top Gate InGaZnO Thin Film Transistor Park Sang-Hee Japanese Journal of Applied Physics, v.50, no.3S, pp.1-4	7
Journal	2011	Transition of Dominant Instability Mechanism Depending on Negative Gate Bias under Illumination in Amorphous In-Ga-Zn-O Thin Film Transistor Oh Himchan Applied Physics Letters, v.98, no.3, pp.1-3	98
Journal	2010	Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors Yoon Sung Min Japanese Journal of Applied Physics, v.49, no.4 PART 2, pp.1-6	20
Journal	2009	Impact of Sn/Zn Ratio on the Gate Bias and Temperature-Induced Instability of Zn-In-Sn-O thin Film Transistors Ryu Min Ki Applied Physics Letters, v.95, no.17, pp.173508-1-173508-3	105
Journal	2009	Ku-Band Power Amplifier MMIC Chipset with On-Chip Active Gate Bias Circuit Youn Sub Noh ETRI Journal, v.31, no.3, pp.247-253	9
Journal	2009	Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications 백강준 Solid-State Electronics, v.53, no.11, pp.1165-1168	23
Journal	2009	Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors Jaeheon Shin ETRI Journal, v.31, no.1, pp.62-64	189
Conference	2008	Ku-band MMIC Power Amplifier with On-chip Compensation Gate Bias Circuit Youn Sub Noh Asia-Pacific Microwave Conference (APMC) 2008, pp.1-4	2
Journal	2008	Polarity Effects of Polymer Gate Electrets on Non‐Volatile Organic Field‐Effect Transistor Memory Back Gangjoon Advanced Functional Materials, v.18, no.22, pp.3678-3685	264
Journal	2008	Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor 전재홍 Journal of the Korean Physical Society, v.53, no.1, pp.412-415	8
Conference	2008	P‐22: Electrical Stability of ZnO TFT during Gate‐Bias Stress 김태현 Society for Information Display (SID) International Symposium 2008, pp.1250-1253	1
Conference	2006	The Abnormal Degradation Behavior of ZnO TFT Under Gate Bias Stress Hwang Chi-Sun The Electrochemical Society (ECS) Meeting 2006, pp.301-305	2
Conference	2006	Broadband 60 GHz Power Amplifier MMIC with Excellent Gain-Flatness Woojin Chang International Conference on Solid State Devices and Materials (SSDM) 2006, pp.614-615
Journal	2006	Significance of Gate Oxide Thinning below 1.5 nm on 1/ f Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress Bongki Mheen Japanese Journal of Applied Physics, v.45, no.6A, pp.4943-4947	0
Journal	2003	Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic Contacts to AlxGa1-xAs/InGaAs (x = 0.75) Pseudomorphic High Electron Mobility Transistor Kyoung Jin Choi Journal of the Korean Physical Society, v.43, no.2, pp.253-258	8
Journal	2002	Active-Matrix Field Emission Display with Amorphous Silicon Thin-Film Transistors and Mo-Tip Field Emitter Arrays Yoon-Ho Song ETRI Journal, v.24, no.4, pp.290-298	26
Journal	2002	액티브-매트릭스 캐소드를 위한 비정질 실리콘 박막 트랜지스터와 Mo-팁의 집적화 및 특성 분석 Kim Do-Hyung IEEE Transactions on Electron Devices, v.49, no.7, pp.1136-1142	3
Journal	2000	A semianalytical parameter extraction of a SPICE BSIM3v3 for RF MOSFET's using S-parameters Seonghearn Lee IEEE Transactions on Microwave Theory and Techniques, v.48, no.3, pp.412-416	26

특허 검색결과
Status	Year	Patent Name	Country	Family Pat.	KIPRIS
No search results.

연구보고서 검색결과
Type	Year	Research Project	Primary Investigator	Download
No search results.