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Journal
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2025 |
Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging
Junhyung Kim Electronics Letters, v.61, no.1, pp.1-4 |
0 |
원문
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Conference
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2024 |
A Ku-Band Low-Noise Amplifier MMIC Using 0.15-µm GaN HEMT Technology
Woojin Chang International Symposium on Antennas and Propagation (ISAP) 2024, pp.1-2 |
0 |
원문
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Journal
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2024 |
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors
Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8 |
0 |
원문
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Conference
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2024 |
Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs
Jung Hyunwook International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444 |
0 |
원문
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Conference
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2024 |
Electrical characteristics of regrown AlGaN/GaN HEMT for implementation of current aperture vertical electron transistors
Kwak Hyeontak 한국LED·광전자학회 학술대회 2024, pp.1-1 |
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Journal
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2024 |
Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
Jung Hyunwook Materials Science in Semiconductor Processing, v.170, pp.1-5 |
2 |
원문
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Conference
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2023 |
Novel T-Shaped Gate Structure of AlGaN/GaN HEMTs on Si for RF Application
Jung Hyunwook The Electrochemical Society (ECS) Meeting 2023, pp.1-1 |
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Conference
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2022 |
Effect of T-gate Structure on RF Characteristic in AlGaN/GaN HEMTs
Jung Hyunwook International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
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Journal
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2021 |
Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
문석호 ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592 |
13 |
원문
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Conference
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2020 |
Frequency characteristics change according to the source and drain spacing of AlGaN / GaN HEMT device
Kang Soo Cheol 한국전자파학회 종합 학술 대회 (하계) 2020, pp.543-543 |
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Conference
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2020 |
Characteristics of AlGaN/GaN HEMT with Selective Internal Inactive Area
Jongmin Lee 대한전자공학회 학술 대회 (하계) 2020, pp.488-489 |
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Conference
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2020 |
Ohmic Contacts with Recess-etched and TMAH-treated Nanometer-scale Patterns for Improved Performance and Reliability in AlGaN/GaN HEMTs
Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2020, pp.790-790 |
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Journal
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2018 |
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure
곽현탁 Applied Sciences, v.8, no.6, pp.1-14 |
25 |
원문
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Journal
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2017 |
6-GHz-to-18-GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance
Shin Dong Hwan ETRI Journal, v.39, no.5, pp.737-745 |
13 |
원문
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Journal
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
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Conference
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2017 |
Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate
Sungjae Chang International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89 |
4 |
원문
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Conference
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2017 |
X-Band GaN MMIC Power Amplifier for the SSPA of a SAR System
Shin Dong Hwan International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.93-95 |
26 |
원문
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Conference
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2017 |
DC and RF Characterization of AlGaN/GaN HEMTs Devices Fabricated Using Digital Gate Recessing
Hyung Sup Yoon 한국전기전자재료학회 학술 대회 (하계) 2017, pp.1-1 |
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Journal
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2017 |
High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161 |
15 |
원문
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Journal
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2016 |
Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire
Sungjae Chang ECS Journal of Solid State Science and Technology, v.5, no.12, pp.N102-N107 |
6 |
원문
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Journal
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2016 |
Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 |
28 |
원문
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Conference
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2016 |
Characterization of 0.18 μm Gate-Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Conference
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2016 |
Surface Treatment for Recessed Gate and its Effects on the Performance of Enhancement-mode AlGaN/GaN HEMTs
Jae Won Do International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Conference
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2016 |
Backside Process of AlGaN/GaN HEMT on SiC with Optimized Via-Hole Etching Conditions
Min Byoung-Gue International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Conference
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2016 |
The Characterization of High Power Density 0.15 μm AlGaN/GaN HEMTs for Their MMIC
Hae Cheon Kim Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) 2016, pp.W17-W18 |
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Conference
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2016 |
GaN HEMT Modeling for X-band Applications
Kim Seong-Il 대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560 |
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Conference
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2016 |
A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT
Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
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Conference
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2016 |
Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate
Jongmin Lee 한국 반도체 학술 대회 (KCS) 2016, pp.1-2 |
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Conference
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2016 |
X-band 5W AlGaN/GaN HEMT Power MMICs
Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
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Journal
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2016 |
0.25 μm AlGaN/GaN HEMT Devices and 9 GHz Power Amplifier
Dong Min Kang 한국전자파학회논문지, v.27, no.1, pp.76-79 |
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원문
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Journal
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2015 |
Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole
Min Byoung-Gue Journal of the Korean Physical Society, v.67, no.4, pp.718-722 |
2 |
원문
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Journal
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2015 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Kyu Jun Cho Journal of the Korean Physical Society, v.67, no.4, pp.682-686 |
3 |
원문
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Journal
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2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
원문
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Conference
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2015 |
Variations of DC Properties of AlGaN/GaN HEMT by Process Enhancement of Gate Recess
Min Byoung-Gue 대한전자공학회 종합 학술 대회 (하계) 2015, pp.192-195 |
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Conference
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2015 |
Wide Head T-Shaped Gate Process for Low-Noise AlGaN/GaN HEMTs
Hyung Sup Yoon International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2015, pp.363-366 |
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Conference
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2015 |
X-band 40W Pulsed Power Amplifier using 0.2um AlGaN/GaN HEMT
Dong Min Kang 한국 반도체 학술 대회 (KCS) 2015, pp.192-192 |
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Conference
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2015 |
Low-Noise Microwave Performance of AlGaN/GaN HEMTs on SiC with Wide Head T-Shaped Gate
Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2015, pp.191-191 |
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Conference
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2014 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Kyu Jun Cho International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.131-131 |
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Conference
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2014 |
100W Pulsed SSPA Using 25W AlGaN/GaN HEMT Technology at 9.2 - 9.5 GHz
Dong Min Kang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.75-75 |
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Conference
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2014 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Recessed Gate by ICP Etching of BCl3/SF6
Hyung Sup Yoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.81-81 |
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Journal
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2014 |
Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests
Jongmin Lee Journal of the Korean Physical Society, v.64, no.10, pp.1446-1450 |
3 |
원문
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Conference
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2014 |
Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts
Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1 |
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Journal
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2014 |
X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology
Woojin Chang Microwave and Optical Technology Letters, v.56, no.1, pp.96-99 |
9 |
원문
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Conference
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2013 |
X-Band Low Noise Amplifier MMIC Using AlGaN/GaN HEMT Technology on SiC Substrate
Woojin Chang Asia-Pacific Microwave Conference (APMC) 2013, pp.681-684 |
7 |
원문
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Conference
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2013 |
Packaged AlGaN/GaN HEMT with 100 W Output Power at 3 GHz
Jong-Won Lim 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Conference
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2013 |
Characteristics of 30W AlGaN/GaN HEMT Device for X-Band Applications
Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Journal
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2012 |
Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106 |
1 |
원문
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Conference
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2012 |
Characteristics of 6W AlGaN/GaN HEMT device for X-band application
Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2012, pp.381-382 |
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Conference
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2010 |
Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications
Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987 |
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Journal
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2003 |
High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz
Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567 |
15 |
원문
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