Journal
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2025 |
Millisecond Pulsed Light Annealing for Improving Performance of Top-Gate Self-Aligned a-IGZO TFT
김희태 IEEE Transactions on Electron Devices, v.72, no.5, pp.2399-2405 |
0 |
원문
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Conference
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2018 |
Top Gate MoSe2 FET with Low Damage Deposition of Al2O3 Gate Dielectric
채현준 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2018, pp.1-1 |
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Conference
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2018 |
Transparent Triple-layer Oxide TFT for Enhanced Photo Switching Characteristics
Lee Jongchan International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2018, pp.1-3 |
2 |
원문
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Journal
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2018 |
High Performance Self-gating Graphene/MoS2 Diode Enabled by Asymmetric Contacts
무하마드칸 Nanotechnology, v.29, no.39, pp.1-6 |
7 |
원문
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Journal
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2018 |
Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy
Choi Kyunghee ACS Applied Materials & Interfaces, v.10, no.24, pp.20213-20218 |
8 |
원문
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Journal
|
2018 |
Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy
이기문 ACS Applied Materials & Interfaces, v.10, no.24, pp.20213-20218 |
8 |
원문
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Journal
|
2018 |
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
무하마드 칸 Chemistry of Materials, v.30, no.3, pp.1011-1016 |
22 |
원문
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Journal
|
2018 |
Ion-Gel-Gated Graphene Optical Modulator with Hysteretic Behavior
Jin Tae Kim ACS Applied Materials & Interfaces, v.10, no.2, pp.1836-1845 |
38 |
원문
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Journal
|
2017 |
Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters
이한솔 ACS Applied Materials & Interfaces, v.9, no.18, pp.15592-15598 |
31 |
원문
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Journal
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2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption
김경아 IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401 |
5 |
원문
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Journal
|
2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption
Byun Chunwon IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401 |
5 |
원문
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Conference
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2015 |
Electrical Performance of ZITO:Er Thin Film Transistors with Top Gate
Yang Jiwoong International Conference on Advanced Electromaterials (ICAE) 2015, pp.1-1 |
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Journal
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2015 |
Thickness Modulation Effects of Al2O3 Capping Layers on Device Performance for the Top-Gate Thin-Film Transistors Using Solution-Processed Poly(4-Vinyl Phenol)/Zn-Sn-O Gate Stacks
김경아 Journal of Vacuum Science and Technology B, v.33, no.3, pp.1-7 |
1 |
원문
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Journal
|
2015 |
Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
박준용 Scientific Reports, v.5, pp.1-5 |
34 |
원문
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Journal
|
2013 |
Comparative studies on electrical bias temperature instabilities of In–Ga–Zn–O thin film transistors with different device configurations
Ryu Min Ki Solid-State Electronics, v.89, pp.171-176 |
21 |
원문
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Journal
|
2012 |
Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits
Kang-Jun Baeg ACS Applied Materials & Interfaces, v.4, no.11, pp.6176-6184 |
82 |
원문
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Journal
|
2012 |
Top-gate staggered poly(3,3″′-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes
Minseok Kim Applied Physics Letters, v.101, no.13, pp.1-5 |
19 |
원문
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Journal
|
2012 |
Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors
박준용 ACS Applied Materials & Interfaces, v.4, no.10, pp.5369-5374 |
27 |
원문
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Conference
|
2012 |
Oxygen Vacancy Effect for the Illumination Instability of In-Ga-O Transparent Thin Film Transistors
Ryu Hojun International Meeting on Information Display (IMID) 2012, pp.1-2 |
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Journal
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2012 |
Effect of Curing Temperature on Nano-Silver Paste Ink for Organic Thin-Film Transistors
Minseok Kim Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3272-3275 |
7 |
원문
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Conference
|
2011 |
Improvement of Top-Gate Staggered OTFT with Short Channel length using Reverse Offset Printing Technology
Minseok Kim International Conference on Advanced Electromaterials (ICAE) 2011, pp.1-1 |
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Journal
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2011 |
Electrical Properties of Top-Gate Oxide Thin-Film Transistors with Double-Channel Layers
Cheong Woo-Seok Journal of Crystal Growth, v.326, no.1, pp.186-190 |
9 |
원문
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Journal
|
2011 |
Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor
Yoon Sung Min IEEE Transactions on Electron Devices, v.58, no.7, pp.2135-2142 |
21 |
원문
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Journal
|
2011 |
Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing
Minseok Kim Electrochemical and Solid-State Letters, v.14, no.8, pp.H333-H336 |
38 |
원문
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Journal
|
2011 |
Low-voltage-operated Top-gate Polymer Thin-film Transistors with High-capacitance P(VDF-TrFE)/PVDF-blended Dielectrics
Soon-Won Jung Current Applied Physics, v.11, no.3 Suppl., pp.S213-S218 |
44 |
원문
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Journal
|
2011 |
Light Response of Top Gate InGaZnO Thin Film Transistor
Park Sang-Hee Japanese Journal of Applied Physics, v.50, no.3S, pp.1-4 |
7 |
원문
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Journal
|
2011 |
High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductors
Kang-Jun Baeg Journal of Polymer Science Part B : Polymer Physics, v.49, no.1, pp.62-67 |
103 |
원문
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Journal
|
2010 |
Low-Voltage-Operated Top-Gate Polymer Thin-Film Transistors with high Capacitance Poly(Vinylidene Fluoride-Trifluoroethylene)/Poly(Methyl Methacrylate) Dielectrics
Soon-Won Jung Journal of Applied Physics, v.108, no.10 |
45 |
원문
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Journal
|
2010 |
High Mobility Top-Gated Poly(3-hexylthiophene) Field-Effect Transistors with High Work-Function Pt Electrodes
백강준 Thin Solid Films, v.518, no.14, pp.4024-4029 |
56 |
원문
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Journal
|
2010 |
Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer
Soon-Won Jung Current Applied Physics, v.10, no.1 SUPPL., pp.e58-e61 |
31 |
원문
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Journal
|
2009 |
Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors
Cheong Woo-Seok ETRI Journal, v.31, no.6, pp.660-666 |
26 |
원문
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Journal
|
2009 |
Channel Protection Layer Effect on the Performance of Oxide TFTs
Park Sang-Hee ETRI Journal, v.31, no.6, pp.653-659 |
77 |
원문
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Journal
|
2009 |
Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics
이정민 Applied Physics Letters, v.94, no.22, pp.1-4 |
109 |
원문
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Journal
|
2009 |
Al-Zn-Sn-O thin Film Transistors with Top and Bottom Gate Structure for AMOLED
Cho Doo-Hee IEICE Transactions on Electronics, v.E92-C, no.11, pp.1340-1346 |
8 |
원문
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Conference
|
2009 |
Oxide TFT Structure Affecting the Device Performance
Park Sang-Hee 한국정보디스플레이학회 학술 대회 2009, pp.385-388 |
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Journal
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2009 |
Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors
Jae Kyeong Jeong Applied Physics Letters, v.95, no.12, pp.123505-1-123505-3 |
58 |
원문
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Conference
|
2009 |
Protective Layer on Active Layer of Al-Zn-Sn-O Thin Film Transistors for Transparent AMOLED
Cho Doo-Hee International Meeting on Information Display (IMID) 2009, pp.318-321 |
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Journal
|
2009 |
Controlling Electron and Hole Charge Injection in Ambipolar Organic Field‐Effect Transistors by Self‐Assembled Monolayers
X. Cheng Advanced Functional Materials, v.19, no.15, pp.2407-2415 |
221 |
원문
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Conference
|
2009 |
Effect of Channel/Insulator Interface Formation Process on the Oxide TFT Performance
Park Sang-Hee Society for Information Display (SID) International Symposium 2009, pp.276-279 |
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Journal
|
2009 |
Optimization of an Amorphous In-Ga-Zn-Oxide Semiconductor for a Top-Gate Transparent Thin-Film Transistor
Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.5, pp.1879-1884 |
9 |
원문
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Journal
|
2009 |
Process development of ITO source/drain electrode for the top-gate indium–gallium–zinc oxide transparent thin-film transistor
Cheong Woo-Seok Thin Solid Films, v.517, no.14, pp.4094-4099 |
23 |
원문
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Journal
|
2009 |
High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators
Cheong Woo-Seok Japanese Journal of Applied Physics, v.48, no.4, pp.1-15 |
16 |
원문
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Journal
|
2009 |
Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors
Yong-Young Noh Organic Electronics, v.10, no.1, pp.174-180 |
121 |
원문
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Journal
|
2009 |
Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors
Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477 |
1 |
원문
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Journal
|
2009 |
Combinatorial Approach to the Fabrication of Zinc-Tin-Oxide Transparent Thin-Film Transistors
Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.544-548 |
9 |
원문
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Conference
|
2008 |
Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
Cho Doo-Hee International Display Workshops (IDW) 2008, pp.1625-1628 |
0 |
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Conference
|
2008 |
Top Gate ZnO-TFT Driving AM-OLED Fabricated on a Plastic Substrate
Hwang Chi-Sun International Meeting on Information Display (IMID) 2008, pp.1466-1469 |
0 |
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Conference
|
2008 |
Effect of Deposition Method of Source/Drain Electrode on a Top Gate ZnO TFT Performance
Park Sang-Hee International Meeting on Information Display (IMID) 2008, pp.254-257 |
0 |
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Journal
|
2007 |
Novel Organic Inverters with Dual-Gate Pentacene Thin-Film Transistor
Koo Jae Bon Organic Electronics, v.8, no.5, pp.552-558 |
58 |
원문
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Journal
|
2007 |
Device Characteristics of Pentacene Dual-Gate Organic Thin-Film Transistor
Koo Jae Bon Japanese Journal of Applied Physics, v.46, no.8A, pp.5062-5066 |
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Journal
|
2006 |
Threshold voltage control of pentacene thin‐film transistor with dual‐gate structure
Koo Jae Bon Journal of Information Display, v.7, no.3, pp.27-30 |
7 |
원문
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Journal
|
2006 |
Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure
Koo Jae Bon Electrochemical and Solid-State Letters, v.9, no.11, pp.G320-G322 |
9 |
원문
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