Subjects : Current ratio

Articles (46)
Patents (1)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2024	Characteristics of Ultrathin Indium Oxide Thin‐Film Transistors with Diverse Channel Lengths Fabricated by Atomic Layer Deposition Juhun Lee Physica Status Solidi (B): Basic Research, v.261, no.7, pp.1-6	2
Journal	2024	Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography Sung Chihun IEEE Electron Device Letters, v.45, no.6, pp.1020-1023	1
Journal	2024	Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer Choi Kyunghee ACS Applied Materials & Interfaces, v.16, no.18, pp.23459-23466	2
Journal	2023	Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer Jeonggil Kim Micromachines, v.14, no.6, pp.1-10	5
Journal	2023	Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer 이준혁 Micromachines, v.14, no.6, pp.1-10	5
Conference	2022	Performance Analysis of Single Coil and Multi-Coil with Same Cross-Sectional Area Kim Sang-Won International Conference on Information and Communication Technology Convergence (ICTC) 2022, pp.2048-2050	0
Journal	2021	Control of WPT Transmitter Coils for Power Distribution to Two Receiver Coils without Feedback 허준 Energies, v.14, no.20, pp.1-11	3
Journal	2021	Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors Chihun Sung IEEE Electron Device Letters, v.42, no.9, pp.1327-1330	7
Journal	2021	Polyvinylalcohol (PVA)-Assisted Exfoliation of ReS2 Nanosheets and the Use of ReS2-PVA Composites for Transparent Memristive Photosynapse Devices Jung Kwang Hoon ACS Applied Materials & Interfaces, v.13, no.7, pp.8919-8928	14
Journal	2019	Cone-jet Printing of Aligned Silver Nanowire/poly(ethylene oxide) Composite Electrodes for Organic Thin-film Transistors 김경훈 Organic Electronics, v.69, pp.190-199	35
Journal	2019	Cone-jet Printing of Aligned Silver Nanowire/poly(ethylene oxide) Composite Electrodes for Organic Thin-film Transistors Xinlin Li Organic Electronics, v.69, pp.190-199	35
Journal	2018	Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface Kim Tae Yoon ACS Applied Materials & Interfaces, v.10, no.31, pp.26405-26412	14
Journal	2018	Metal-Agglomeration-Suppressed Growth of MoS2 and MoSe2 Films with Small Sulfur and Selenium Molecules for High Mobility Field Effect Transistor Applications Jung Kwang Hoon Nanoscale, v.10, no.32, pp.15213-15221	10
Journal	2018	Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors Yeonwha Oh Science of Advanced Materials, v.10, no.4, pp.518-521
Journal	2018	Low-Temperature Solution-Processed Zinc Oxide Field Effect Transistor by Blending Zinc Hydroxide and Zinc Oxide Nanoparticle in Aqueous Solutions 신현우 Japanese Journal of Applied Physics, v.57, no.5S, pp.1-5	5
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 조영우 Solid-State Electronics, v.141, pp.7-12	9
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 손동혁 Solid-State Electronics, v.141, pp.7-12	9
Journal	2018	Na-Cation-Assisted Exfoliation of MX2 (M = Mo, W; X = S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer-Nanocomposite Memory Applications 연창봉 Small, v.14, no.2, pp.1-10	23
Journal	2017	Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs Sungjae Chang IEEE Electron Device Letters, v.38, no.4, pp.441-444	14
Journal	2014	Device Characteristics of Inkjet-Printed ZnO TFTs by Solution Process Lim Sang Chul Japanese Journal of Applied Physics, v.53, no.5S3, pp.1-5	8
Journal	2013	Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices 최민섭 Nature Communications, v.4, pp.1-7	602
Journal	2012	Pressure Control Organic Vapor Deposition Methods for Fabricating Organic Thin-Film Transistors Seongdeok Ahn ETRI Journal, v.34, no.6, pp.970-973	3
Conference	2012	Electronic Characteristics of ZnO Thin Film Transistors by Low-temperature Process Lim Sang Chul International Meeting on Information Display (IMID) 2012, pp.1-2
Journal	2012	Effect of Curing Temperature on Nano-Silver Paste Ink for Organic Thin-Film Transistors Minseok Kim Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3272-3275	7
Journal	2012	The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors Jang Moon Gyu Thin Solid Films, v.520, no.6, pp.2166-2169	1
Journal	2011	Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs Jun Myungsim Semiconductor Science and Technology, v.26, no.12, pp.1-4	0
Journal	2011	High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4	1
Journal	2011	Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array Kim Byeonghoon IEEE Electron Device Letters, v.32, no.3, pp.324-326	29
Journal	2010	Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor Jang Moon Gyu Journal of Vacuum Science and Technology B, v.28, no.4, pp.799-801	6
Journal	2010	Variations in the Electric Characteristics of an Organic Schottky Diode with the P3HT Thickness Kim Kang Dae Journal of the Korean Physical Society, v.57, no.1, pp.124-127	10
Journal	2010	Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator Yoon Sung Min Electrochemical and Solid-State Letters, v.13, no.5, pp.H141-H143	17
Conference	2009	21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane Cho Doo-Hee Society for Information Display (SID) International Symposium 2009, pp.280-283	29
Journal	2009	Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique 문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624	6
Journal	2009	Fabrication of N- and P-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods 신진욱 Japanese Journal of Applied Physics, v.48, no.4, pp.1-4	0
Journal	2009	Transparent Oxide Thin-Film Transistors Composed of Al and Sn-Doped Zinc Indium Oxide Cho Doo-Hee IEEE Electron Device Letters, v.30, no.1, pp.48-50	18
Journal	2008	Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions 신진욱 IEEE Electron Device Letters, v.29, no.12, pp.1336-1339	4
Journal	2008	Downscaling of Organic Field‐Effect Transistors with a Polyelectrolyte Gate Insulator Lars Herlogsson Advanced Materials, v.20, no.24, pp.4708-4713	140
Journal	2008	20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors Jang Moon Gyu Applied Physics Letters, v.93, no.19, pp.1-3	11
Conference	2008	P‐28: ZnO TFTs Fabricated at Room Temperature by Solution Process Ji-Young Oh Society for Information Display (SID) International Symposium 2008, pp.1274-1276	8
Journal	2008	High-gain and Low-hysteresis Properties of Organic Inverters with an UV-photo Patternable Gate Dielectrics Lim Sangchul Thin Solid Films, v.516, no.12, pp.4330-4333	5
Journal	2008	Three-Dimensionally Stacked Poly-Si TFT CMOS Inverter with High Quality Laser Crystallized Channel on Si Substrate Oh Soon-Young Solid-State Electronics, v.52, no.3, pp.372-376	7
Journal	2007	Characteristics of Pentacene Thin Film Transistor with Al2O3 Gate Dielectrics on Plastic Substrate Lim Jungwook Electrochemical and Solid-State Letters, v.10, no.10, pp.J36-J38	8
Journal	2007	Pentacene Thin-film Transistors and Inverters with Plasma-enhanced Atomic-layer-deposited Al2O3 Gate Dielectric Koo Jae Bon Thin Solid Films, v.515, no.5, pp.3132-3137	26
Journal	2006	Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732	32
Conference	2005	Fabrication of High Performance Low Temperature Poly-Si(LTPS) on Flexible Metal Foil Park Dong Jin International Display Workshops in Conjunction with Asia Display (IDW/AD) 2005, pp.1-4
Journal	2004	고성능 저온 폴리실리콘 소자 특성 Kim Yong Hae IEEE Electron Device Letters, v.25, no.8, pp.550-552	27

특허 검색결과
Status	Year	Patent Name	Country	Family Pat.	KIPRIS
Registered	2010	LOOP FILTER AND PHASE LOCKED LOOP INCLUDING THE SAME	UNITED STATES

연구보고서 검색결과
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