Journal
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2025 |
The morphological control of PEDOT:PSS top electrode for transparent organic light-emitting diodes
Hyunsu Cho Journal of Industrial and Engineering Chemistry, v.권호미정, pp.1-10 |
0 |
원문
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Journal
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2025 |
The morphological control of PEDOT:PSS top electrode for transparent organic light-emitting diodes
남혁진 Journal of Industrial and Engineering Chemistry, v.권호미정, pp.1-10 |
0 |
원문
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Journal
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2024 |
β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV
Kyu Jun Cho Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5 |
2 |
원문
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Journal
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2024 |
Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography
Sung Chihun IEEE Electron Device Letters, v.45, no.6, pp.1020-1023 |
1 |
원문
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Journal
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2024 |
Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer
Choi Kyunghee ACS Applied Materials & Interfaces, v.16, no.18, pp.23459-23466 |
2 |
원문
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Journal
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2023 |
Automatic Tuning Receiver for Improved Efficiency and EMI Suppression in Spread Spectrum Wireless Power Transfer
Saidul Alam Chowdhury IEEE Transactions on Industrial Electronics, v.70, no.1, pp.352-363 |
20 |
원문
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Journal
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2022 |
A robust and scalable electron transparent multi-stacked graphene gate for effective electron-beam convergence in field emission digital X-ray sources
Kim Seong Jun Applied Surface Science, v.604, pp.1-9 |
3 |
원문
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Journal
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2022 |
A robust and scalable electron transparent multi-stacked graphene gate for effective electron-beam convergence in field emission digital X-ray sources
Yujung Ahn Applied Surface Science, v.604, pp.1-9 |
3 |
원문
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Conference
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2022 |
Microwave-Assisted Synthesis of Novel Nanoparticles for the detection of Phosphate Ions. Turn-off and Turn-on Sensing Examples
오진성 MNE Eurosensors (MNE-ES) 2022, pp.1-1 |
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Journal
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2021 |
Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors
Chihun Sung IEEE Electron Device Letters, v.42, no.9, pp.1327-1330 |
7 |
원문
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Journal
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2020 |
Design and Characterization of N-MCT with Low Vth Off-FET for High Current-drive Capability
Sungkyu Kwon Journal of Semiconductor Technology and Science, v.20, no.6, pp.533-542 |
2 |
원문
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Conference
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2020 |
Structural Design and Simulation of MOS Controlled Thyristor with 0V Turn-off Capability
Sungkyu Kwon 대한전자공학회 학술 대회 (추계) 2020, pp.157-160 |
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Conference
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2020 |
1700 V Full-SiC Half-bridge Power Module with Low Switching Loss
Jung Dong Yun Electronic System-Integration Technology Conference (ESTC) 2020, pp.1-4 |
1 |
원문
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Journal
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2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
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원문
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Journal
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2019 |
Investigation of Improved Performance for Organic Rectifying Diodes via Electrical Annealing
Kang Chan-Mo IEEE Access, v.7, pp.84082-84090 |
2 |
원문
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Journal
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2019 |
Partially Pyridine-functionalized Quantum Dots for Efficient Red, Green, and Blue Light-emitting Diodes
Sukyung Choi Journal of Materials Chemistry C, v.7, no.12, pp.3429-3435 |
22 |
원문
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Journal
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2017 |
1- $\mu \text{m}$ Short-Channel Oxide Thin-Film Transistors With Triangular Gate Spacer
Ji Hun Choi IEEE Electron Device Letters, v.38, no.10, pp.1398-1400 |
13 |
원문
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Journal
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2017 |
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
Lee Hyun Soo Journal of Semiconductor Technology and Science, v.17, no.3, pp.354-362 |
1 |
원문
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Journal
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2017 |
Control of PN-Junction Turn-on Voltage in 4H-SiC merged PiN Schottky Diode
Junbo Park Applied Physics Letters, v.110, no.14, pp.1-5 |
7 |
원문
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Journal
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2016 |
InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors With High Mobility and High Uniformity
Ji Hun Choi IEEE Electron Device Letters, v.37, no.10, pp.1295-1298 |
36 |
원문
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Conference
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2016 |
Common-Source Inductance Reduction in GaN Cascode FET for High- Speed Switching and High-Efficiency Operation
Woojin Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Conference
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2015 |
Double-Channel InZnO/AlSnZnInO Thin-Film Transistors with Ultra High Mobility
Choi Ji Hoon International Display Workshops (IDW) 2015, pp.189-190 |
1 |
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Journal
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2015 |
0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
Lee Hyun Soo IEEE Electron Device Letters, v.36, no.11, pp.1132-1134 |
51 |
원문
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Conference
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2015 |
Strong Visible Light Emission from Silicon Nanocrystals Embedded into a Silicon Carbide Film
Huh Chul International Conference on Quantum, Nano and Micro Technologies (ICQNM) 2015, pp.5-6 |
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Conference
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2015 |
700 V / 20 A Double AlGaN/GaN Lateral Schottky Barrier Diodes with Recessed Anode Structure on Silicon Substrate
나제호 International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2 |
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Journal
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2015 |
Strong Visible Electroluminescence from Silicon Nanocrystals Embedded in a Silicon Carbide Film
Huh Chul Applied Physics Letters, v.106, no.21, pp.1-4 |
15 |
원문
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Conference
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2015 |
The Highly Stable InGaZnO TFTs Deposited by High Density Plasma Sputtering
Cho Sung Haeng International Thin-Film Transistor Conference (ITC) 2015, pp.17-18 |
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Journal
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2014 |
Enhanced Performances in Inverted Bottom-Emission Organic Light-Emitting Diodes with KBH4-Doped Electron-Injection Layer
Hyunkoo Lee Physica Status Solidi (A), v.211, no.8, pp.1807-1811 |
4 |
원문
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Journal
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2014 |
Characterization of ZnO–SnO2 nanocomposite thin films deposited by pulsed laser ablation and their field effect electronic properties
Su Jae Lee Materials Letters, v.122, pp.94-97 |
20 |
원문
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Journal
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2013 |
Comparative studies on electrical bias temperature instabilities of In–Ga–Zn–O thin film transistors with different device configurations
Ryu Min Ki Solid-State Electronics, v.89, pp.171-176 |
21 |
원문
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Conference
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2013 |
Analysis of Forward Characteristics in AlGan/GaN SBD with Schottky Contact Lying on Mesa Edge
Park Young Rak International Conference on Solid State Devices and Materials (SSDM) 2013, pp.144-145 |
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원문
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Conference
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2013 |
High Mobility Oxide TFT for Large Area High Resolution AMOLED
Park Sang-Hee Society for Information Display (SID) International Symposium 2013, pp.18-21 |
10 |
원문
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Journal
|
2013 |
Double-Layered Passivation Film Structure of Al2O3/SiNx for High Mobility Oxide Thin Film Transistors
Park Sang-Hee Journal of Vacuum Science and Technology B, v.31, no.2, pp.1-6 |
30 |
원문
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Conference
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2012 |
Low Temperature Fabrication of Aqueous Solution Processed Flexible Indium Oxide Transparent Thin-Film Transistors on a Plastic Substrate
황영환 International Meeting on Information Display (IMID) 2012, pp.681-682 |
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Journal
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2012 |
Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation
Oh Himchan ETRI Journal, v.34, no.2, pp.280-283 |
16 |
원문
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Journal
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2011 |
Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance
Yang Shinhyuk IEEE Electron Device Letters, v.32, no.12, pp.1692-1694 |
60 |
원문
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Journal
|
2011 |
Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor
Yoon Sung Min IEEE Transactions on Electron Devices, v.58, no.7, pp.2135-2142 |
21 |
원문
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Journal
|
2010 |
Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator
Yoon Sung Min Electrochemical and Solid-State Letters, v.13, no.5, pp.H141-H143 |
17 |
원문
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Journal
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2009 |
Al-Zn-Sn-O thin Film Transistors with Top and Bottom Gate Structure for AMOLED
Cho Doo-Hee IEICE Transactions on Electronics, v.E92-C, no.11, pp.1340-1346 |
8 |
원문
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Conference
|
2009 |
P‐8: Effects of Active Thickness in Oxide Semiconductor TFTs
Hwang Chi-Sun Society for Information Display (SID) International Symposium 2009, pp.1107-1109 |
10 |
원문
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Conference
|
2008 |
Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
Cho Doo-Hee International Display Workshops (IDW) 2008, pp.1625-1628 |
0 |
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Journal
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2008 |
Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature
Cho Doo-Hee Applied Physics Letters, v.93, no.14, pp.1-3 |
152 |
원문
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Journal
|
2006 |
The Effect of Channel Length on Turn-on Voltage in Pentacene-Based Thin Film Transistor
Koo Jae Bon Synthetic Metals, v.156, no.7-8, pp.533-536 |
25 |
원문
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Journal
|
2006 |
The Effects of Surface Treatment on Device Performance in Pentacene-based thin Film Transistor
Koo Jae Bon Synthetic Metals, v.156, no.2-4, pp.99-103 |
38 |
원문
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Journal
|
2006 |
Field Emission from Ni-Disilicide Nanorods Formed by using Implantation of Ni in Si Coupled with Laser Annealing
옥영우 Applied Physics Letters, v.88, no.4, pp.1-3 |
26 |
원문
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Journal
|
2002 |
필드에미터 어레이 적용을 위한 미세 탄소나노튜브 픽셀의 특성연구
Cho Young-Rae Japanese Journal of Applied Physics, v.41, no.1, pp.1532-1535 |
27 |
원문
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