Subjects : Drain current

Articles (51)
Patents (1)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2023	Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer Jeonggil Kim Micromachines, v.14, no.6, pp.1-10	5
Journal	2023	Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer 이준혁 Micromachines, v.14, no.6, pp.1-10	5
Journal	2023	Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator Sungjae Chang Nanomaterials, v.13, no.5, pp.1-13	1
Journal	2021	Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction Lim Jungwook Materials, v.14, no.24, pp.1-8	4
Journal	2021	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors Sungjae Chang Crystals, v.11, no.11, pp.1-10	6
Journal	2020	W‐Band MMIC chipset in 0.1‐μm mHEMT technology Jongmin Lee ETRI Journal, v.42, no.4, pp.549-561	6
Journal	2020	A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices Min Byoung-Gue Journal of the Korean Physical Society, v.77, no.2, pp.122-126	4
Journal	2020	Study of oxygen plasma induced modulation of photoconductivity in MoS2 field effect transistor Muhammad Atif Khan Superlattices and Microstructures, v.142, pp.1-6	6
Journal	2019	DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess Hyung Sup Yoon 한국전자파학회논문지, v.30, no.4, pp.282-285
Journal	2019	DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure 곽현탁 Journal of Nanoscience and Nanotechnology, v.19, no.4, pp.2319-2322
Journal	2018	DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess Jung Hyunwook ECS Journal of Solid State Science and Technology, v.7, no.4, pp.197-200	2
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 조영우 Solid-State Electronics, v.141, pp.7-12	9
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 손동혁 Solid-State Electronics, v.141, pp.7-12	9
Journal	2017	Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems Jung Dong Yun ETRI Journal, v.39, no.1, pp.62-68	16
Journal	2016	Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption 김경아 IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401	5
Journal	2016	Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption Byun Chunwon IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401	5
Journal	2015	High-Performance Amorphous Multilayered ZnO-SnO2 Heterostructure Thin-Film Transistors: Fabrication and Characteristics Su Jae Lee ETRI Journal, v.37, no.6, pp.1135-1142	28
Journal	2015	Thickness Modulation Effects of Al2O3 Capping Layers on Device Performance for the Top-Gate Thin-Film Transistors Using Solution-Processed Poly(4-Vinyl Phenol)/Zn-Sn-O Gate Stacks 김경아 Journal of Vacuum Science and Technology B, v.33, no.3, pp.1-7	1
Journal	2014	Characterization of Amorphous Multilayered ZnO-SnO2 Heterostructure Thin Films and their Field Effect Electronic Properties Su Jae Lee Applied Physics Letters, v.105, no.20, pp.1-4	14
Journal	2014	Characterization of ZnO–SnO2 nanocomposite thin films deposited by pulsed laser ablation and their field effect electronic properties Su Jae Lee Materials Letters, v.122, pp.94-97	20
Journal	2014	Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests Jongmin Lee Journal of the Korean Physical Society, v.64, no.10, pp.1446-1450	3
Journal	2014	Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate Hokyun Ahn Solid-State Electronics, v.95, pp.42-45	18
Conference	2014	Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1
Journal	2013	Unusual Instability Mode of Transparent All Oxide Thin Film Transistor under Dynamic Bias Condition Oh Himchan Applied Physics Letters, v.103, no.12, pp.1-5	3
Conference	2013	Effects of Various Field Plates for Normally-Off GaN MISFETs Woojin Chang International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2013, pp.332-333
Journal	2013	Light-Exposure Effects on Electrical Characteristics of 6,13-Bis(triisopropylsilylethynyl)Pentacene/CdTe Composite Thin-Film Transistors 박재훈 Japanese Journal of Applied Physics, v.52, no.5 PART 2, pp.1-4	3
Journal	2012	Simulation and Fabrication Studies of Semi-SuperJunction Trench Power MOSFETs by RSO Process with Silicon Nitride Layer Na Kyoung Il ETRI Journal, v.34, no.6, pp.962-965	16
Journal	2012	Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106	1
Journal	2012	Characteristic Variations of Graphene Field-Effect Transistors Induced by CF4 Gas Park Jae Hoon Japanese Journal of Applied Physics, v.51, no.8, pp.1-4	2
Journal	2012	Variation in the Electrical Properties of 100 V/100 a Rated Mesh and Stripe TDMOSFETs (Trench Double-Diffused MOSFETs) for Motor Drive Applications Na Kyoung Il Journal of the Korean Physical Society, v.60, no.10, pp.1508-1512	0
Journal	2012	Current Stress Induced Electrical Instability in Transparent Zinc Tin Oxide Thin-Film Transistors Cheong Woo-Seok Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3421-3424	18
Journal	2011	Electrical Properties of Top-Gate Oxide Thin-Film Transistors with Double-Channel Layers Cheong Woo-Seok Journal of Crystal Growth, v.326, no.1, pp.186-190	9
Journal	2011	A Simple Method for Quantification of Beta-Amyloid Using the Photo-Sensitive Thin Film Transistor Kim Kwan Soo Advanced Materials Research, v.254, pp.58-61	0
Journal	2011	n-Ga-Zn-oxide Thin-film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target Cheong Woo-Seok Journal of the Korean Physical Society, v.58, no.3, pp.608-611	3
Journal	2009	Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors Jae Kyeong Jeong Applied Physics Letters, v.95, no.12, pp.123505-1-123505-3	58
Journal	2009	Optimization of an Amorphous In-Ga-Zn-Oxide Semiconductor for a Top-Gate Transparent Thin-Film Transistor Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.5, pp.1879-1884	9
Journal	2009	Low-Frequency Noise in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors 이정민 IEEE Electron Device Letters, v.30, no.5, pp.505-507	61
Journal	2009	High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators Cheong Woo-Seok Japanese Journal of Applied Physics, v.48, no.4, pp.1-15	16
Journal	2009	Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477	1
Journal	2009	Charge Storage Effect on In2O3 Nanowires with Ruthenium Complex Molecules Choi Insung Applied Physics Express, v.2, no.1, pp.1-3	0
Journal	2008	Downscaling of Organic Field‐Effect Transistors with a Polyelectrolyte Gate Insulator Lars Herlogsson Advanced Materials, v.20, no.24, pp.4708-4713	140
Conference	2007	Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT Hokyun Ahn Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4	0
Journal	2007	Electric Characteristics of Organic Thin-film Transistors and Logic Circuits with a Ferroelectric Gate Insulator Yong Suk Yang Thin Solid Films, v.515, no.19, pp.7688-7691	2
Journal	2006	Significance of Gate Oxide Thinning below 1.5 nm on 1/ f Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress Bongki Mheen Japanese Journal of Applied Physics, v.45, no.6A, pp.4943-4947	0
Journal	2006	Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732	32
Journal	2005	New Method of Driving an OLED with an OTFT Lim Sang Chul Synthetic Metals, v.151, no.3, pp.197-201	18
Journal	2004	The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs Youn Doo Hyeb IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789	15
Journal	2003	Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications Jang Moon Gyu IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209	16
Journal	2003	High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567	15
Journal	2003	A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing Kim Jongdae IEEE Transactions on Electron Devices, v.50, no.2, pp.378-383	5
Journal	2002	Breakdown Voltage Improvement of p-LDMOSFET with an Uneven Racetrack Source for PDP Driver IC Applications Roh Tae Moon ETRI Journal, v.24, no.4, pp.328-331	8

특허 검색결과
Status	Year	Patent Name	Country	Family Pat.	KIPRIS
Registered	2019	SEMICONDUCTOR DEVICE INCLUDING CMOS CIRCUIT AND OPERATION METHOD THEREOF	UNITED STATES

연구보고서 검색결과
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