Subjects : device performance

Articles (63)
Patents (2)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Conference	2024	Enhancing Ohmic Contacts in GaN HEMT through Optimization of Ramp-up Rate in Annealing Process Junhyung Kim International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1104-1105	0
Conference	2024	Methods to Improve Energy Efficiency and Availability of IoT Devices in Wireless Environments Choi Min Suk International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.376-378	0
Journal	2024	The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8	0
Journal	2024	Extremely Stable Ag‐Based Photonics, Plasmonic, Optical, and Electronic Materials and Devices Designed with Surface Chemistry Engineering for Anti‐Tarnish 안준혁 Small, v.20, no.31, pp.1-10	2
Conference	2024	Impact of T-gate head size on the device performance and radiation tolerance in LG = 0.15 m GaN-based HEMTs Sungjae Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2024, pp.283-283
Journal	2023	Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator Sungjae Chang Nanomaterials, v.13, no.5, pp.1-13	1
Journal	2023	Highly stable Mo/Al bilayer electrode for stretchable electronics Ji Hun Choi Journal of Information Display, v.24, no.2, pp.137-145	6
Journal	2022	Three-wavelength White Organic Light-emitting Diodes on Silicon for High Luminance and Color Gamut Microdisplays Kang Chan-Mo Journal of Industrial and Engineering Chemistry, v.105, pp.132-137	15
Journal	2022	Three-wavelength White Organic Light-emitting Diodes on Silicon for High Luminance and Color Gamut Microdisplays Lee Seongji Journal of Industrial and Engineering Chemistry, v.105, pp.132-137	15
Journal	2022	Metal Oxide Charge Transfer Complex for Effective Energy Band Tailoring in Multilayer Optoelectronics 김무현 Nature Communications, v.13, pp.1-9	29
Journal	2022	Metal Oxide Charge Transfer Complex for Effective Energy Band Tailoring in Multilayer Optoelectronics Kwon Byoung-Hwa Nature Communications, v.13, pp.1-9	29
Journal	2021	Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications 문석호 ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592	13
Journal	2021	The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors Sooji Nam Physica Status Solidi (A) - Applications and Materials Science, v.218, no.18, pp.1-7	2
Journal	2021	A Systematic Study of the Interactions in the Top Electrode/Capping Layer/Thin Film Encapsulation of Transparent OLEDs Kwon Byoung-Hwa Journal of Industrial and Engineering Chemistry, v.93, pp.237-244	13
Journal	2020	Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Sungjae Chang Nanomaterials, v.10, no.11, pp.1-11	11
Conference	2020	G03-1728 - Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs Sungjae Chang PRiME 2020, pp.1-3
Conference	2020	Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs Sungjae Chang PRiME 2020 (ECS Transactions 98), v.98, no.5, pp.519-526	1
Conference	2020	Unmanned Aerial Vehicle Identification Success Probability with LoRa Communication Approach Jinhyung Oh International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC) 2020, pp.1-6	6
Journal	2019	Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs Sungjae Chang ECS Journal of Solid State Science and Technology, v.8, no.12, pp.245-248	11
Journal	2019	Thermally Evaporated Amorphous InZnO Thin Film Applicable to Transparent Conducting Oxide for Solar Cells Lee Woo Jung Journal of Alloys and Compounds, v.806, pp.976-982	31
Journal	2019	Analysis of Vertical Phase Distribution in Reactively Sputtered Zinc Oxysulfide Thin Films Cho Daehyung Applied Surface Science, v.486, pp.555-560	18
Journal	2019	Origin of the Dry Etch Damage in the Short-channel Oxide Thin-film Transistors for High Resolution Display Application Ji Hun Choi Thin Solid Films, v.674, pp.71-75	7
Journal	2018	Highly Efficient Ag-alloyed Cu(In,Ga)Se2 Solar Cells with Wide Bandgaps and Their Application to Chalcopyrite-based Tandem Solar Cells 김기환 Nano Energy, v.48, pp.345-352	48
Journal	2018	Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation Sungjae Chang ECS Journal of Solid State Science and Technology, v.7, no.6, pp.86-90	8
Journal	2018	DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess Jung Hyunwook ECS Journal of Solid State Science and Technology, v.7, no.4, pp.197-200	2
Journal	2017	3D Printing Based Single-Build Process for Electronic Devices Dang Hyun Woo Journal of Nanoscience and Nanotechnology, v.17, no.10, pp.7259-7263	0
Journal	2017	Highly Efficient Green, Blue, and White Phosphorescent Inverted Organic Light-Emitting Diodes by Improving Charge Injection and Balance Hyunkoo Lee Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.5, no.38, pp.9911-9919	13
Journal	2017	Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369	7
Conference	2017	Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate Sungjae Chang International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89	4
Journal	2017	Thickness-dependent Schottky Barrier Height of MoS2 Field-effect Transistors 김준영 Nanoscale, v.9, no.18, pp.6151-6157	127
Conference	2016	High Performance Solution-processed Indium-free Metal Oxide Thin-film Transistors Sooji Nam International Meeting on Information Display (IMID) 2016, pp.188-188
Journal	2016	Improved Thin-Film Transistor Performance of Low-Temperature, Solution-Processed Indium Oxide by Controlling Solution Temperature Kang Chan-Mo Journal of Nanoscience and Nanotechnology, v.16, no.8, pp.8473-8477	9
Journal	2016	A Comparative Study of the Plasmon Effect in Nanoelectrode THz Emitters: Pulse vs. Continuous-wave Radiation Moon Kiwon Applied Physics Letters, v.109, no.7, pp.1-5	7
Journal	2016	Low-temperature, Solution-processed Indium-oxide Thin-film Transistors Fabricated by Using an Ultraviolet-ozone Treatment Kim Hoon Journal of the Korean Physical Society, v.68, no.8, pp.971-974	4
Journal	2015	Thickness Modulation Effects of Al2O3 Capping Layers on Device Performance for the Top-Gate Thin-Film Transistors Using Solution-Processed Poly(4-Vinyl Phenol)/Zn-Sn-O Gate Stacks 김경아 Journal of Vacuum Science and Technology B, v.33, no.3, pp.1-7	1
Journal	2014	Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures 이관형 Advanced Functional Materials, v.24, no.32, pp.5157-5163	71
Journal	2014	Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures Yu Young-Jun Advanced Functional Materials, v.24, no.32, pp.5157-5163	71
Journal	2014	Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures 강석주 Advanced Functional Materials, v.24, no.32, pp.5157-5163	71
Journal	2014	Growth and Structural Properties of Reactively Co-sputtered CIGS Films and Their Solar Cell Applications 김제하 Journal of the Korean Physical Society, v.64, no.3, pp.465-470	0
Journal	2014	Improved Surface Passivation Using Dual-Layered a-Si:H for Silicon Heterojunction Solar Cells Lee Kyu Sung ECS Solid State Letters, v.3, no.3, pp.P33-P36	17
Journal	2013	Understanding the influence of doping in efficient phosphorescent organic light-emitting diodes with an organic p–i–n homojunction Changhun Yun Organic Electronics, v.14, no.7, pp.1695-1703	22
Journal	2013	Analytic Treatment of the Distributed Resistance of the Window Layer in Solar Cells with Parallel Grids Lee Kyu-Seok Progress in Photovoltaics : Research and Applications, v.21, no.2, pp.195-201	5
Journal	2012	Improved Thin Film Transistor Performance of Solution-Processed-Zinc-Oxide Nanorods with Spin-on-Glass Capping Layer Musarrat Hasan Current Applied Physics, v.12, no.SUPPL. 1, pp.e18-e23	4
Journal	2011	Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs Jun Myungsim Semiconductor Science and Technology, v.26, no.12, pp.1-4	0
Journal	2011	Improved Performance Uniformity of Inkjet Printed N-channel Organic Field-effect Transistors and Complementary Inverters Kang-Jun Baeg Organic Electronics, v.12, no.4, pp.634-640	66
Conference	2010	Mini Piezoelectric Power Generator with Multi-Frequency Response Sang Choon Ko Eurosensors 2010, pp.770-773	1
Conference	2009	Oxide TFT Structure Affecting the Device Performance Park Sang-Hee 한국정보디스플레이학회 학술 대회 2009, pp.385-388
Conference	2009	Improvement of TFT Properties by Hydrogen Defect Passivation for High Performance Flexible Electronics Device Application Musarrat Hasan Trends in Nanotechnology Conference (TNT) 2009, pp.1-2
Journal	2009	Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique 문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624	6
Journal	2008	Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti-Si-N Heating Layers Yoon Sung Min Journal of the Electrochemical Society, v.155, no.6, pp.H421-H425
Conference	2008	Protection of Window Med ia Video by Faked FourCC Park Jee Hyun International Conference on Consumer Electronics (ICCE) 2008, pp.1-2	1
Conference	2007	Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT Hokyun Ahn Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4	0
Journal	2007	Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates Hyung Sup Yoon Journal of the Korean Physical Society, v.50, no.3, pp.889-892	4
Journal	2006	White Light Emitting Electrophosphorescent Devices with Solution Processed Emission Layer Lee Jeong Ik Japanese Journal of Applied Physics, v.45, no.12, pp.9231-9233	5
Conference	2006	Secure MPEG-4 Streaming on IP Set-top Box Park Jee Hyun Europe-China Conference on Intellectual Properly in Digital Media (IPDM) 2006, pp.1-7
Journal	2006	Relationship between the liquid crystallinity and field‐effect‐transistor behavior of fluorene–thiophene‐based conjugated copolymers 임은희 Journal of Polymer Science Part A : Polymer Chemistry, v.44, no.16, pp.4709-4721	51
Journal	2006	Nanoscale thin-film Morphologies and Field-Effect Transistor Behavior of Oligothiophene Derivatives 임은희 Organic Electronics, v.7, no.3, pp.121-131	45
Journal	2006	Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383	2
Journal	2006	The Effects of Surface Treatment on Device Performance in Pentacene-based thin Film Transistor Koo Jae Bon Synthetic Metals, v.156, no.2-4, pp.99-103	38
Conference	2005	Research and Development on Next-Generation Nonvolatile Memory in ETRI Byoung Gon Yu Symposium on Semiconductors and Integrated Circuits Technology, pp.1-4
Journal	2005	DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690	5
Journal	2005	Solution-Processible Blue-Light-Emitting Polymers Based on Alkoxy-Substituted Poly(Spirobifluorene) Lee Jeong Ik ETRI Journal, v.27, no.2, pp.181-187	26
Conference	2002	The Effects of Plasma Induced Damage on The Channel Layers of Ion Implanted GaAs MESFETs during Reactive Ion Etching(RIE) and Plasma Ashing Processes Hokyun Ahn Materials Research Society (MRS) Meeting 2002 (Spring), v.720, pp.67-72	1

특허 검색결과
Status	Year	Patent Name	Country	Family Pat.	KIPRIS
Registered	2006	미세 티형 또는 감마형 게이트 전극을 가지는 전계효과 트랜지스터의 제조방법	UNITED STATES
Registered	2008	Manufacturing method of field effcet transistor having fine T or gamma gate	UNITED STATES

연구보고서 검색결과
Type	Year	Research Project	Primary Investigator	Download
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