Subjects : ON/OFF ratio

Articles (53)
Patents (1)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2022	Highly Efficient Hybrid Light-Emitting Transistors incorporating MoOx/Ag/MoOx Semi-Transparent Electrodes 박유정 Journal of Materials Chemistry C, v.10, no.3, pp.880-885	5
Journal	2021	Photoinduced Synaptic Behavior of InxTiyO Thin Film Transistors Lim Jungwook Advanced Electronic Materials, v.7, no.4, pp.1-7	10
Journal	2020	Electrically Stable Polymer-only Dielectrics for Organic Field-effect Transistors with Low Gate Leakage Current Sooji Nam Organic Electronics, v.85, pp.1-5	14
Journal	2020	Exploiting Defective RRAM Array as Synapses of HTM Spatial Pooler with Boost-factor Adjustment Scheme for Defect-tolerant Neuromorphic Systems Woo Jiyong Scientific Reports, v.10, pp.1-8	13
Journal	2018	Facile Fabrication of Self-assembled ZnO Nanowire Network Channels and Its Gate-controlled UV Detection 장호찬 Nanoscale Research Letters, v.13, pp.1-9	13
Journal	2018	Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure 칸무하메드 ACS Applied Materials & Interfaces, v.10, no.28, pp.23961-23967	19
Journal	2018	Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors Yeonwha Oh Science of Advanced Materials, v.10, no.4, pp.518-521
Journal	2017	1- $\mu \text{m}$ Short-Channel Oxide Thin-Film Transistors With Triangular Gate Spacer Ji Hun Choi IEEE Electron Device Letters, v.38, no.10, pp.1398-1400	13
Journal	2017	Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single- Layer MoS2 Device Mohammad Asif Khan ACS Applied Materials & Interfaces, v.9, no.32, pp.26983-26989	8
Journal	2017	Pre-Annealing Effect for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors Kang Chan-Mo Journal of Nanoscience and Nanotechnology, v.17, no.5, pp.3293-3297	3
Journal	2017	Organic Vapor-Jet-based Route for Solvent-Free Additive Formation of Oxide Semiconductors 최정민 Organic Electronics, v.43, pp.235-239	3
Journal	2017	Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment 강민식 Nanoscale, v.9, no.4, pp.1645-1652	44
Journal	2016	InGaZnO-Based Stretchable Ferroelectric Memory Transistor Using Patterned Polyimide/Polydimethylsiloxane Hybrid Substrate Na Bock Soon Journal of Nanoscience and Nanotechnology, v.16, no.10, pp.10280-10283	6
Journal	2016	InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors With High Mobility and High Uniformity Ji Hun Choi IEEE Electron Device Letters, v.37, no.10, pp.1295-1298	36
Journal	2016	The Bilayer Structure for Low-Temperature, Solution-Processed Indium Zinc Oxide Thin-Film Transistors Yeonwha Oh Journal of Nanoscience and Nanotechnology, v.16, no.8, pp.8692-8695	2
Journal	2016	Non-volatile Organic Ferroelectric Memory Transistors Fabricated using Rigid Polyimide Islands on an Elastomer Substrate Soon-Won Jung Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.4, no.20, pp.4485-4490	28
Journal	2016	High-Performance, Solution-Processed Indium-Oxide TFTs Using Rapid Flash Lamp Annealing Kang Chan-Mo IEEE Electron Device Letters, v.37, no.5, pp.595-598	31
Conference	2015	Double-Channel InZnO/AlSnZnInO Thin-Film Transistors with Ultra High Mobility Choi Ji Hoon International Display Workshops (IDW) 2015, pp.189-190	1
Journal	2015	Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate Soon-Won Jung Journal of Vacuum Science and Technology B, v.33, no.5, pp.1-4	18
Journal	2015	Thickness Modulation Effects of Al2O3 Capping Layers on Device Performance for the Top-Gate Thin-Film Transistors Using Solution-Processed Poly(4-Vinyl Phenol)/Zn-Sn-O Gate Stacks 김경아 Journal of Vacuum Science and Technology B, v.33, no.3, pp.1-7	1
Journal	2015	Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer Soon-Won Jung Organic Electronics, v.16, pp.46-53	50
Journal	2013	Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor Soon-Won Jung ETRI Journal, v.35, no.4, pp.734-737	18
Journal	2011	Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance Yang Shinhyuk IEEE Electron Device Letters, v.32, no.12, pp.1692-1694	60
Journal	2011	Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor Yoon Sung Min IEEE Transactions on Electron Devices, v.58, no.7, pp.2135-2142	21
Journal	2011	“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel Yoon Sung Min Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499	2
Journal	2011	Polymer 1x2 Thermo-Optic Digital Optical Switch Based on the Total-Internal-Reflection Effect Han Young-Tak ETRI Journal, v.33, no.2, pp.275-278	17
Journal	2011	Improved Performance Uniformity of Inkjet Printed N-channel Organic Field-effect Transistors and Complementary Inverters Kang-Jun Baeg Organic Electronics, v.12, no.4, pp.634-640	66
Journal	2011	Water-Related Abnormal Instability of Transparent Oxide/Organic Hybrid Thin Film Transistors Yang Shinhyuk Applied Physics Letters, v.98, no.10, pp.1-3	30
Journal	2011	n-Ga-Zn-oxide Thin-film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target Cheong Woo-Seok Journal of the Korean Physical Society, v.58, no.3, pp.608-611	3
Journal	2011	Structural and Optical Properties of Cu Doped ZnO Thin Films by Co-Sputtering Chung Sung Mook Journal of Nanoscience and Nanotechnology, v.11, no.1, pp.782-786	10
Journal	2010	Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application Musarrat Hasan Electrochemical and Solid-State Letters, v.13, no.3, pp.H80-H82	2
Journal	2010	Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene) Yoon Sung Min Organic Electronics, v.11, no.11, pp.1746-1752	18
Journal	2010	Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer Yoon Sung Min Journal of the Electrochemical Society, v.157, no.7, pp.H771-H778	3
Journal	2010	Mechanically Flexible Thin Film Transistors and Logic Gates on Plastic Substrates by Use of Single-Crystal Silicon Wires from Bulk Wafers 이승기 Applied Physics Letters, v.96, no.17, pp.1-3	21
Journal	2010	Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors Yoon Sung Min Japanese Journal of Applied Physics, v.49, no.4 PART 2, pp.1-6	20
Journal	2010	Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926	108
Journal	2010	Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer Soon-Won Jung Current Applied Physics, v.10, no.1 SUPPL., pp.e58-e61	31
Journal	2009	Al-Zn-Sn-O thin Film Transistors with Top and Bottom Gate Structure for AMOLED Cho Doo-Hee IEICE Transactions on Electronics, v.E92-C, no.11, pp.1340-1346	8
Journal	2009	Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer Yoon Sung Min Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6	32
Journal	2009	Optimization of an Amorphous In-Ga-Zn-Oxide Semiconductor for a Top-Gate Transparent Thin-Film Transistor Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.5, pp.1879-1884	9
Journal	2009	High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators Cheong Woo-Seok Japanese Journal of Applied Physics, v.48, no.4, pp.1-15	16
Journal	2009	Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477	1
Conference	2008	Fabrication of High Performance Pentacene TFTs using TX100 in PVP Gate Dielectric Song Kichul International Display Workshops (IDW) 2008, pp.715-716
Journal	2008	Synergistic Effect of Polymer and Oligomer Blends for Solution-processable Organic Thin-film Transistors 임은희 Organic Electronics, v.9, no.6, pp.952-958	12
Conference	2008	Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED Cho Doo-Hee International Display Workshops (IDW) 2008, pp.1625-1628	0
Conference	2008	Novel Oxide Thin Film Transistors for Transparent AMOLED Cho Doo-Hee International Meeting on Information Display (IMID) 2008, pp.1101-1104	1
Journal	2008	125 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode You Jongbum Optics Express, v.16, no.22, pp.18340-18344	70
Conference	2008	Top Gate ZnO-TFT Driving AM-OLED Fabricated on a Plastic Substrate Hwang Chi-Sun International Meeting on Information Display (IMID) 2008, pp.1466-1469	0
Journal	2008	Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature Cho Doo-Hee Applied Physics Letters, v.93, no.14, pp.1-3	152
Journal	2008	Transparent Thin-film Transistors with Zinc Oxide Semiconductor Fabricated by Reactive Sputtering using Metallic Zinc target Cheong Woo-Seok Thin Solid Films, v.516, no.22, pp.8159-5164	12
Journal	2007	Doping Effect of Solution-processed Thin-film Transistors based on Polyfluorene 임은희 Journal of Materials Chemistry, v.17, no.14, pp.1416-1420	68
Conference	2006	4.3: Transparent ZnO Thin Film Transistor Array for the Application of Transparent AM-OLED Display Park Sang-Hee International Symposium, Seminar and Exhibition (SID) 2006, pp.25-28	43
Journal	2003	Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications Jang Moon Gyu IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209	16

특허 검색결과
Status	Year	Patent Name	Country	Family Pat.	KIPRIS
Registered	2009	Graphene field effect transistor and method of manufacturing the same	UNITED STATES

연구보고서 검색결과
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