학술지
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2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
장성재 Nanomaterials, v.13 no.5, pp.1-13 |
0 |
원문
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학술지
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2020 |
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
장성재 Nanomaterials, v.10 no.11, pp.1-11 |
8 |
원문
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학술지
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
강수철 Nanomaterials, v.10 no.11, pp.1-9 |
5 |
원문
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학술지
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2019 |
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
황인태 Applied Sciences, v.9 no.17, pp.1-13 |
5 |
원문
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학술지
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2019 |
Characterization of Metal-ferroelectric-metal-insulator-semiconductor Structures using Ferroelectric Al-doped HfO2 Thin Films Prepared by Atomic-layer Deposition with Different O3 Doses
나소영 Japanese Journal of Applied Physics, v.58 no.7, pp.1-5 |
10 |
원문
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학술대회
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2019 |
Ultralow Power Wireless-Fire-Alarm-System using a VO2-Based Metal-Insulator-Transition Device
손지민 International Conference on Sensing, Communication, and Networking (SECON) 2019, pp.1-2 |
1 |
원문
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학술지
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2019 |
Solution-Processable Nanocrystal-Based Broadband Fabry-Perot Absorber for Reflective Vivid Color Generation
김수정 ACS Applied Materials & Interfaces, v.11 no.7, pp.7280-7287 |
35 |
원문
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학술지
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2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
김성일 Journal of the Korean Physical Society, v.74 no.2, pp.196-200 |
4 |
원문
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학술지
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2018 |
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure
칸무하메드 ACS Applied Materials & Interfaces, v.10 no.28, pp.23961-23967 |
17 |
원문
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학술지
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2018 |
Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation
장성재 ECS Journal of Solid State Science and Technology, v.7 no.6, pp.86-90 |
7 |
원문
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학술지
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2016 |
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
안호균 ETRI Journal, v.38 no.4, pp.675-684 |
4 |
원문
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학술지
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2015 |
Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
박영락 Physica Status Solidi (A), v.2112 no.5, pp.1170-1173 |
7 |
원문
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학술지
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2014 |
Postfabrication Annealing Effects on Insulator-Metal Transitions in VO2 Thin-Film Devices
Servin Rathi ACS Applied Materials & Interfaces, v.6 no.22, pp.19718-19725 |
19 |
원문
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학술지
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2014 |
G-s0 Mode Converter with Lateral Gold Mirrors for Nano-Plasmonic Integrated Circuits
이동헌 Journal of Nanoscience and Nanotechnology, v.14 no.11, pp.8320-8324 |
2 |
원문
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학술지
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2014 |
Electrical Properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN Metal-Insulator-Semiconductor (MIS) Structure
V Rajagopal Reddy Semiconductor Science and Technology, v.29 no.7, pp.1-6 |
27 |
원문
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학술지
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2014 |
Solution-Processed Phase-Change VO2 Metamaterials from Colloidal Vanadium Oxide (VOx) Nanocrystals
백태종 ACS Nano, v.8 no.1, pp.797-806 |
105 |
원문
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학술지
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2014 |
Solution-Processed Phase-Change VO2 Metamaterials from Colloidal Vanadium Oxide (VOx) Nanocrystals
홍성훈 ACS Nano, v.8 no.1, pp.797-806 |
105 |
원문
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학술지
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2013 |
Negative-Differential-Resistance-Switching Si-Transistor Operated by Power Pulse and Identity of Zener Breakdown
김현탁 Applied Physics Letters, v.103 no.17, pp.1-3 |
2 |
원문
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학술대회
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2013 |
Metal-Insulator Transition Mechanism and Sensors Using Mott Insulator VO2
김현탁 NATO Advanced Research Workshop on Nanotechnology in the Security Systems 2013, v.NATO SPC C, pp.205-214 |
0 |
원문
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학술지
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2012 |
Evolution of local work function in epitaxial VO 2 thin films spanning the metal-insulator transition
손아름 Applied Physics Letters, v.101 no.19, pp.1-3 |
30 |
원문
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학술지
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2012 |
Important Role of Polymorphs of Organic Semiconductors on the Reduction of the Current Leakage in an Organic Capacitor
배진혁 Molecular Crystals and Liquid Crystals, v.567 no.1, pp.57-6286 |
1 |
원문
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학술지
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2012 |
A Waveguide-Typed Plasmonic Mode Converter
박해령 Optics Express, v.20 no.17, pp.18636-18645 |
18 |
원문
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학술지
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2012 |
Subthreshold Characteristics of Pentacene Field-Effect Transistors Influenced by Grain Boundaries
박재훈 Journal of Applied Physics, v.111 no.10, pp.1-6 |
12 |
원문
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학술지
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2012 |
Photo-Assisted Bistable Switching Using Mott Transition in Two-Terminal VO2 Device
서기완 Applied Physics Letters, v.100 no.1, pp.1-3 |
54 |
원문
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학술지
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2011 |
Voltage-Pulse-Induced Switching Dynamics in VO2 Thin-Film Devices on Silicon
서기완 IEEE Electron Device Letters, v.32 no.11, pp.1582-1584 |
35 |
원문
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학술지
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2011 |
Effective Plasmonic Mode-Size Converter
박해령 Optics Express, v.19 no.22, pp.21605-21613 |
10 |
원문
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학술지
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2010 |
Voltage-induced Current-Jump Assisted by Infrared or Temperature in p-Type GaAs
최성열 Journal of the Korean Physical Society, v.57 no.61, pp.1769-1772 |
0 |
원문
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학술지
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2010 |
Linear Characteristics of a Metal-Insulator Transition Voltage and Oscillation Frequency in VO2 Devices
김봉준 IEEE Electron Device Letters, v.31 no.11, pp.1314-1316 |
11 |
원문
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학술지
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2010 |
Linearity Enhanced 2.4 GHz WLAN HBT Power Amplifier Using Digitally-Controlled Tunable Output Matching Network with pHEMT Switch in GaAs BiFET Technology
윤상웅 Electronics Letters, v.46 no.23, pp.1573-1574 |
6 |
원문
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학술지
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2010 |
밀리미터파 대역 단일 집적 증폭기
지홍구 한국산학기술학회논문지, v.11 no.10, pp.3917-3922 |
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원문
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학술지
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2010 |
VO2 Thin-Film Varistor Based on Metal-Insulator Transition
김봉준 IEEE Electron Device Letters, v.31 no.1, pp.14-16 |
23 |
원문
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학술지
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2010 |
Effects of W Doping on the Metal-Insulator Transition in Vanadium Dioxide Film
채병규 Physica B : Condensed Matter, v.405 no.2, pp.663-667 |
36 |
원문
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학술대회
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2009 |
Voltage-Induced Current-Jump Assisted by Infrared or Temperature in P-Type GaAs
최성열 International Conference on Advanced Materials and Devices (ICAMD) 2009, pp.1-3 |
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학술지
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2009 |
Stability Improvement of 60 GHz Narrowband Amplifier Using Microstrip Coupled Lines
장우진 ETRI Journal, v.31 no.6, pp.741-748 |
9 |
원문
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학술지
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2009 |
Control of Current-Jump Induced by Voltage, Temperature, Light in P-Type GaAs: Programmable Critical Temperature Sensor
최성열 Applied Physics Letters, v.95 no.23, pp.1-4 |
4 |
원문
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학술지
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2009 |
비휘발성 메모리 응용을 위한 ALD법을 이용한 Al2O3 절연막의 특성
정순원 전기학회논문지, v.58 no.12, pp.2420-2424 |
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학술지
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2009 |
Vanadium Dioxide and Vanadium Sesquioxide Thin Films Fabricated on (0001) or (10 10)Al2O3 by Reactive RF-Magnetron Sputter Deposition and Subsequent Annealing Processes
윤선진 Japanese Journal of Applied Physics, v.48 no.4, pp.1-4 |
9 |
원문
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학술지
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2008 |
Micro X-Ray Diffraction Study in VO2 Films - Separation between Metal-Insulator Transition and Structural Phase Transition
김봉준 Physical Review B : Condensed Matter and Materials Physics, v.77 no.23, pp.1-18 |
122 |
원문
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학술지
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2008 |
Preparation of V2O3 Thin Films by the Reduction of VO2 in a Very Low Pressure
윤선진 Electrochemical and Solid-State Letters, v.11 no.7, pp.H173-H175 |
6 |
원문
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학술지
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2008 |
Characteristics of Vanadium Dioxide Films Deposited by RF-magnetron Sputter Deposition Technique using V-metal Target
윤선진 Physica B : Condensed Matter, v.403 no.5-9, pp.1381-1383 |
20 |
원문
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학술지
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2008 |
Vanadium Dioxide Films Deposited on Amorphous SiO2- and Al2O3-Coated Si Substrates by Reactive RF-Magnetron Sputter Deposition
윤선진 Japanese Journal of Applied Physics, v.47 no.4, pp.3067-3069 |
22 |
원문
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학술지
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2008 |
Metal-insulator Transition-induced Electrical Oscillation in Vanadium Dioxide Thin Film
이용욱 Applied Physics Letters, v.92 no.16, pp.1-3 |
96 |
원문
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학술지
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2008 |
Electrodynamics of the Vanadium Oxides VO2 and V2O3
M.M.Qazilbash Physical Review B : Condensed Matter and Materials Physics, v.77 no.11, pp.1-10 |
250 |
원문
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학술지
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2007 |
Hole-driven MIT theory, Mott transition in VO2, MoBRiK device
김현탁 Physica C : Superconductivity, v.460-462, pp.1076-1078 |
21 |
원문
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학술대회
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2007 |
Synthesis of VO2 Nanowire and Observation of the Metal-Insulator Transition
최성열 International Conference on Solid State Devices and Materials (SSDM) 2007, pp.1-2 |
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학술지
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2007 |
Direct Observation of the Structural Component of the Metal-Insulator Phase Transition and Growth Habits of Epitaxially Grown VO2 Nanowires
Jung-Inn Sohn Nano Letters, v.7 no.6, pp.1570-1574 |
122 |
원문
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학술지
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2007 |
Observation of Abrupt First-order Metal-insulator Transition in Be-doped GaAs
김현탁 Journal of Crystal Growth, v.301-302, pp.252-255 |
4 |
원문
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학술지
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2007 |
Temperature Dependence of Metal-Insulator Transition in Mn-Doped p-Type GaAs
최성열 Journal of the Korean Physical Society, v.50 no.3, pp.844-847 |
4 |
원문
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학술지
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2007 |
Analysis of the Surface Morphology and the Resistance of VO2 Thin Films on M-Plane Al2O3
김봉준 Journal of the Korean Physical Society, v.50 no.3, pp.653-656 |
22 |
원문
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학술지
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2007 |
Comparative Analysis of VO2 Thin Films Prepared on Sapphire and SiO2/Si Substrates by the Sol-Gel Process
채병규 Japanese Journal of Applied Physics, v.46 no.2, pp.738-743 |
29 |
원문
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학술대회
|
2007 |
60 GHz Amplifier MMICs and Module for 60 GHz WPAN System
장우진 Radio and Wireless Symposium (RWS) 2007, pp.377-380 |
4 |
원문
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학술지
|
2006 |
Temperature Dependence of Mott Transition in VO2 and Programmable Critical Temperature Sensor
김봉준 Applied Physics Letters, v.90 no.2, pp.1-4 |
205 |
원문
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학술지
|
2006 |
Monoclinic and Correlated Metal Phase in VO 2 as Evidence of the Mott Transition : Coherent Phonon Analysis
김현탁 Physical Review Letters, v.97 no.26, pp.1-4 |
303 |
원문
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학술지
|
2006 |
High Negative Differential Resistance in Silicon Quantum Dot Metal-Insulator-Semiconductor Structure
박래만 Applied Physics Letters, v.89 no.15, pp.1-3 |
14 |
원문
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학술지
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2005 |
Abrupt Metal-Insulator Transition Observedin VO2 thin Films Induced by a Switching Voltage Pulse
채병규 Physica B : Condensed Matter, v.369 no.1-4, pp.76-80 |
126 |
원문
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학술지
|
2005 |
Highly Oriented VO2 Thin Films Prepared by Sol-Gel Deposition
채병규 Electrochemical and Solid-State Letters, v.9 no.1, pp.C12-C14 |
100 |
원문
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학술지
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2003 |
Electrical Characteristics of Metal-Insulator-Semiconductor Schottky Diodes using a Photowashing Treatment in AlxGa1-xAs/InGaAs (X=0.75) Pseudomorphic High Electron Mobility Transistors
Sang Youn Han Journal of Vacuum Science and Technology B, v.21 no.5, pp.2133-2137 |
8 |
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