|
Journal
|
2023 |
Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications
조홍래 ACS Applied Materials & Interfaces, v.15, no.44, pp.51339-51349 |
7 |
원문
|
|
Journal
|
2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Sungjae Chang Nanomaterials, v.13, no.5, pp.1-13 |
1 |
원문
|
|
Conference
|
2021 |
Study of Threshold Voltage Shift Mechanism Corresponding to the Proton Radiation Energy in GaN-based MIS-HEMTs
Sungjae Chang 대한전자공학회 학술 대회 (하계) 2021, pp.93-96 |
|
|
|
Journal
|
2020 |
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Sungjae Chang Nanomaterials, v.10, no.11, pp.1-11 |
11 |
원문
|
|
Journal
|
2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 |
5 |
원문
|
|
Journal
|
2019 |
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
황인태 Applied Sciences, v.9, no.17, pp.1-13 |
6 |
원문
|
|
Journal
|
2019 |
Characterization of Metal-ferroelectric-metal-insulator-semiconductor Structures using Ferroelectric Al-doped HfO2 Thin Films Prepared by Atomic-layer Deposition with Different O3 Doses
나소영 Japanese Journal of Applied Physics, v.58, no.7, pp.1-5 |
11 |
원문
|
|
Conference
|
2019 |
Ultralow Power Wireless-Fire-Alarm-System using a VO2-Based Metal-Insulator-Transition Device
Jimin Son International Conference on Sensing, Communication, and Networking (SECON) 2019, pp.1-2 |
1 |
원문
|
|
Journal
|
2019 |
Solution-Processable Nanocrystal-Based Broadband Fabry–Perot Absorber for Reflective Vivid Color Generation
김수정 ACS Applied Materials & Interfaces, v.11, no.7, pp.7280-7287 |
39 |
원문
|
|
Journal
|
2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200 |
5 |
원문
|
|
Journal
|
2018 |
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure
칸무하메드 ACS Applied Materials & Interfaces, v.10, no.28, pp.23961-23967 |
19 |
원문
|
|
Journal
|
2018 |
Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation
Sungjae Chang ECS Journal of Solid State Science and Technology, v.7, no.6, pp.86-90 |
8 |
원문
|
|
Journal
|
2016 |
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET
Hokyun Ahn ETRI Journal, v.38, no.4, pp.675-684 |
5 |
원문
|
|
Journal
|
2015 |
Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
Park Young Rak Physica Status Solidi (A), v.2112, no.5, pp.1170-1173 |
11 |
원문
|
|
Journal
|
2014 |
Postfabrication Annealing Effects on Insulator-Metal Transitions in VO2 Thin-Film Devices
Servin Rathi ACS Applied Materials & Interfaces, v.6, no.22, pp.19718-19725 |
21 |
원문
|
|
Journal
|
2014 |
G-s0 Mode Converter with Lateral Gold Mirrors for Nano-Plasmonic Integrated Circuits
이동헌 Journal of Nanoscience and Nanotechnology, v.14, no.11, pp.8320-8324 |
2 |
원문
|
|
Journal
|
2014 |
Electrical Properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN Metal-Insulator-Semiconductor (MIS) Structure
V Rajagopal Reddy Semiconductor Science and Technology, v.29, no.7, pp.1-6 |
29 |
원문
|
|
Journal
|
2014 |
Solution-Processed Phase-Change VO2 Metamaterials from Colloidal Vanadium Oxide (VOx) Nanocrystals
Sunghoon Hong ACS Nano, v.8, no.1, pp.797-806 |
116 |
원문
|
|
Journal
|
2014 |
Solution-Processed Phase-Change VO2 Metamaterials from Colloidal Vanadium Oxide (VOx) Nanocrystals
백태종 ACS Nano, v.8, no.1, pp.797-806 |
116 |
원문
|
|
Journal
|
2013 |
Negative-Differential-Resistance-Switching Si-Transistor Operated by Power Pulse and Identity of Zener Breakdown
Hyun-Tak Kim Applied Physics Letters, v.103, no.17, pp.1-3 |
2 |
원문
|
|
Conference
|
2013 |
Metal-Insulator Transition Mechanism and Sensors Using Mott Insulator VO2
Hyun-Tak Kim NATO Advanced Research Workshop on Nanotechnology in the Security Systems 2013, v.NATO SPC C, pp.205-214 |
0 |
원문
|
|
Journal
|
2012 |
Evolution of local work function in epitaxial VO 2 thin films spanning the metal-insulator transition
손아름 Applied Physics Letters, v.101, no.19, pp.1-3 |
33 |
원문
|
|
Journal
|
2012 |
Important Role of Polymorphs of Organic Semiconductors on the Reduction of Current Leakage in an Organic Capacitor
배진혁 Molecular Crystals and Liquid Crystals, v.567, no.1, pp.57-6286 |
1 |
원문
|
|
Journal
|
2012 |
A Waveguide-Typed Plasmonic Mode Converter
박해령 Optics Express, v.20, no.17, pp.18636-18645 |
18 |
원문
|
|
Journal
|
2012 |
Subthreshold Characteristics of Pentacene Field-Effect Transistors Influenced by Grain Boundaries
Park Jae Hoon Journal of Applied Physics, v.111, no.10, pp.1-6 |
12 |
원문
|
|
Journal
|
2012 |
Photo-Assisted Bistable Switching Using Mott Transition in Two-Terminal VO2 Device
Seo Giwan Applied Physics Letters, v.100, no.1, pp.1-3 |
57 |
원문
|
|
Journal
|
2011 |
Voltage-Pulse-Induced Switching Dynamics in $ \hbox{VO}_{2}$ Thin-Film Devices on Silicon
Seo Giwan IEEE Electron Device Letters, v.32, no.11, pp.1582-1584 |
36 |
원문
|
|
Journal
|
2011 |
Effective Plasmonic Mode-Size Converter
박해령 Optics Express, v.19, no.22, pp.21605-21613 |
10 |
원문
|
|
Journal
|
2010 |
Voltage-induced Current-Jump Assisted by Infrared or Temperature in p-Type GaAs
Choi Sungyoul Journal of the Korean Physical Society, v.57, no.61, pp.1769-1772 |
0 |
원문
|
|
Journal
|
2010 |
Linearity enhanced 2.4 GHz WLAN HBT power amplifier using digitally-controlled tunable output matching network with pHEMT switch in GaAs BiFET technology
윤상웅 Electronics Letters, v.46, no.23, pp.1573-1574 |
6 |
원문
|
|
Journal
|
2010 |
Linear Characteristics of a Metal-Insulator Transition Voltage and Oscillation Frequency in VO2 Devices
Kim Bongjun IEEE Electron Device Letters, v.31, no.11, pp.1314-1316 |
11 |
원문
|
|
Journal
|
2010 |
Monolithic Integrated Amplifier for Millimeter Wave Band
Ji Hong Gu 한국산학기술학회논문지, v.11, no.10, pp.3917-3922 |
|
원문
|
|
Journal
|
2010 |
VO2 Thin-Film Varistor Based on Metal-Insulator Transition
Kim Bongjun IEEE Electron Device Letters, v.31, no.1, pp.14-16 |
23 |
원문
|
|
Journal
|
2009 |
Properties of Al₂O₃ Insulating Film Using the ALD Method for Nonvolatile Memory Application
Soon-Won Jung 전기학회논문지, v.58, no.12, pp.2420-2424 |
|
|
|
Journal
|
2009 |
Control of Current-Jump Induced by Voltage, Temperature, Light in P-Type GaAs: Programmable Critical Temperature Sensor
Choi Sungyoul Applied Physics Letters, v.95, no.23, pp.1-4 |
4 |
원문
|
|
Journal
|
2009 |
Stability Improvement of 60 GHz Narrowband Amplifier Using Microstrip Coupled Lines
Woojin Chang ETRI Journal, v.31, no.6, pp.741-748 |
9 |
원문
|
|
Journal
|
2009 |
Vanadium Dioxide and Vanadium Sesquioxide Thin Films Fabricated on (0001) or (10 10)Al2O3 by Reactive RF-Magnetron Sputter Deposition and Subsequent Annealing Processes
Sun Jin Yun Japanese Journal of Applied Physics, v.48, no.4, pp.1-4 |
9 |
원문
|
|
Journal
|
2008 |
Micro X-Ray Diffraction Study in VO2 Films - Separation between Metal-Insulator Transition and Structural Phase Transition
Kim Bongjun Physical Review B : Condensed Matter and Materials Physics, v.77, no.23, pp.1-18 |
126 |
원문
|
|
Journal
|
2008 |
Metal-insulator Transition-induced Electrical Oscillation in Vanadium Dioxide Thin Film
Lee Yongwook Applied Physics Letters, v.92, no.16, pp.1-3 |
100 |
원문
|
|
Journal
|
2008 |
Characteristics of Vanadium Dioxide Films Deposited by RF-magnetron Sputter Deposition Technique using V-metal Target
Sun Jin Yun Physica B : Condensed Matter, v.403, no.5-9, pp.1381-1383 |
20 |
원문
|
|
Journal
|
2008 |
Preparation of V2O3 Thin Films by the Reduction of VO2 in a Very Low Pressure
Sun Jin Yun Electrochemical and Solid-State Letters, v.11, no.7, pp.H173-H175 |
6 |
원문
|
|
Journal
|
2008 |
Vanadium Dioxide Films Deposited on Amorphous SiO2- and Al2O3-Coated Si Substrates by Reactive RF-Magnetron Sputter Deposition
Sun Jin Yun Japanese Journal of Applied Physics, v.47, no.4, pp.3067-3069 |
22 |
원문
|
|
Journal
|
2008 |
Electrodynamics of the Vanadium Oxides VO2 and V2O3
M.M.Qazilbash Physical Review B : Condensed Matter and Materials Physics, v.77, no.11, pp.1-10 |
260 |
원문
|
|
Journal
|
2007 |
Hole-driven MIT theory, Mott transition in VO2, MoBRiK device
Hyun-Tak Kim Physica C : Superconductivity, v.460-462, pp.1076-1078 |
21 |
원문
|
|
Conference
|
2007 |
Synthesis of VO2 Nanowire and Observation of the Metal-Insulator Transition
Sungyoul Choi International Conference on Solid State Devices and Materials (SSDM) 2007, pp.1-2 |
|
|
|
Journal
|
2007 |
Direct Observation of the Structural Component of the Metal-Insulator Phase Transition and Growth Habits of Epitaxially Grown VO2 Nanowires
Jung-Inn Sohn Nano Letters, v.7, no.6, pp.1570-1574 |
127 |
원문
|
|
Journal
|
2007 |
Observation of abrupt first-order metal–insulator transition in Be-doped GaAs
Hyun-Tak Kim Journal of Crystal Growth, v.301-302, pp.252-255 |
4 |
원문
|
|
Journal
|
2007 |
Temperature Dependence of Metal-Insulator Transition in Mn-Doped p-Type GaAs
Sungyoul Choi Journal of the Korean Physical Society, v.50, no.3, pp.844-847 |
4 |
원문
|
|
Journal
|
2007 |
Analysis of the Surface Morphology and the Resistance of VO2 Thin Films on M-Plane Al2O3
Kim Bongjun Journal of the Korean Physical Society, v.50, no.3, pp.653-656 |
23 |
원문
|
|
Journal
|
2007 |
Comparative Analysis of VO2 Thin Films Prepared on Sapphire and SiO2/Si Substrates by the Sol-Gel Process
Chae Byung Gyu Japanese Journal of Applied Physics, v.46, no.2, pp.738-743 |
30 |
원문
|
|
Conference
|
2007 |
60 GHz Amplifier MMICs and Module for 60 GHz WPAN System
Woojin Chang Radio and Wireless Symposium (RWS) 2007, pp.377-380 |
4 |
원문
|
|
Journal
|
2006 |
Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor
Kim Bong Jun Applied Physics Letters, v.90, no.2, pp.1-4 |
227 |
원문
|
|
Journal
|
2006 |
Monoclinic and Correlated Metal Phase in VO 2 as Evidence of the Mott Transition : Coherent Phonon Analysis
Hyun-Tak Kim Physical Review Letters, v.97, no.26, pp.1-4 |
313 |
원문
|
|
Journal
|
2006 |
High Negative Differential Resistance in Silicon Quantum Dot Metal-Insulator-Semiconductor Structure
Rae-Man Park Applied Physics Letters, v.89, no.15, pp.1-3 |
14 |
원문
|
|
Journal
|
2005 |
Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse
Chae Byung Gyu Physica B : Condensed Matter, v.369, no.1-4, pp.76-80 |
132 |
원문
|
|
Journal
|
2005 |
Highly Oriented VO2 Thin Films Prepared by Sol-Gel Deposition
Chae Byung Gyu Electrochemical and Solid-State Letters, v.9, no.1, pp.C12-C14 |
104 |
원문
|
|
Journal
|
2003 |
Electrical Characteristics of Metal-Insulator-Semiconductor Schottky Diodes using a Photowashing Treatment in AlxGa1-xAs/InGaAs (X=0.75) Pseudomorphic High Electron Mobility Transistors
Sang Youn Han Journal of Vacuum Science and Technology B, v.21, no.5, pp.2133-2137 |
8 |
|