|
Journal
|
2025 |
Mechanically Adaptable High‐Performance p(SBMA‐MMA) Copolymer Hydrogel with Iron (II/III) Perchlorate for Wearable Thermocell Applications
신길용 Advanced Functional Materials, v.35, no.12, pp.1-12 |
2 |
원문
|
|
Conference
|
2024 |
Monolithic-ALD-Oxide-Semiconductor-Channel CMOS Inverter Applications with n-Type IGZO Vertical TFT and p-Type SnO Planar TFT
Seong-Mok Cho International Meeting on Information Display (IMID) 2024, pp.269-269 |
|
|
|
Conference
|
2024 |
Monolithic-ALD-Oxide-Semiconductor-Channel CMOS Inverter Applications with n-Type IGZO Vertical TFT and p-Type SnO Planar TFT
Jeho Na International Meeting on Information Display (IMID) 2024, pp.269-269 |
|
|
|
Journal
|
2024 |
Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p−n Semiconductor Heterojunction Structure
Jung Hoon Han ACS Applied Materials & Interfaces, v.16, no.24, pp.31254-31260 |
0 |
원문
|
|
Journal
|
2024 |
Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer
Choi Kyunghee ACS Applied Materials & Interfaces, v.16, no.18, pp.23459-23466 |
2 |
원문
|
|
Journal
|
2022 |
Analysis of temporal carrier build‐up in reconfigurable field‐effect transistor
Jeong Woo Park Electronics Letters, v.58, no.1, pp.35-37 |
0 |
원문
|
|
Journal
|
2021 |
The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors
Sooji Nam Physica Status Solidi (A) - Applications and Materials Science, v.218, no.18, pp.1-7 |
2 |
원문
|
|
Journal
|
2021 |
Ultrafast Photoexcited-Carrier Behavior Induced by Hydrogen Ion Irradiation of a Cu(In,Ga)Se2 Thin Film in the Terahertz Region
Lee Woo Jung IEEE Transactions on Terahertz Science and Technology, v.11, no.2, pp.175-182 |
6 |
원문
|
|
Journal
|
2021 |
Ultrafast Photoexcited-Carrier Behavior Induced by Hydrogen Ion Irradiation of a Cu(In,Ga)Se2 Thin Film in the Terahertz Region
이규석 IEEE Transactions on Terahertz Science and Technology, v.11, no.2, pp.175-182 |
6 |
원문
|
|
Journal
|
2021 |
Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils
Aziz Ahmed Scientific Reports, v.11, pp.1-17 |
9 |
원문
|
|
Journal
|
2021 |
Cu/graphene Hybrid Transparent Conducting Electrodes for Organic Photovoltaic Devices
강주환 Carbon, v.171, pp.341-349 |
34 |
원문
|
|
Journal
|
2021 |
Cu/graphene Hybrid Transparent Conducting Electrodes for Organic Photovoltaic Devices
Sukyung Choi Carbon, v.171, pp.341-349 |
34 |
원문
|
|
Journal
|
2018 |
Technical Trends of Semiconductors for Harsh Environments
Woojin Chang 전자통신동향분석, v.33, no.6, pp.12-23 |
|
원문
|
|
Journal
|
2018 |
Facile Fabrication of Self-assembled ZnO Nanowire Network Channels and Its Gate-controlled UV Detection
장호찬 Nanoscale Research Letters, v.13, pp.1-9 |
13 |
원문
|
|
Journal
|
2018 |
Design and Characterization for Travelling Wave Electrodes of High-Speed Mach-Zehnder Electro-Optic Modulator on an N-doped InP Substrate
Kim Sungil Microwave and Optical Technology Letters, v.60, no.6, pp.1558-1562 |
5 |
원문
|
|
Journal
|
2018 |
Computational Discovery of P-type Transparent Oxide Semiconductors using Hydrogen Descriptor
윤용 npj Computational Materials, v.4, pp.1-7 |
70 |
원문
|
|
Journal
|
2018 |
Computational Discovery of P-type Transparent Oxide Semiconductors using Hydrogen Descriptor
임강훈 npj Computational Materials, v.4, pp.1-7 |
70 |
원문
|
|
Journal
|
2017 |
Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters
이한솔 ACS Applied Materials & Interfaces, v.9, no.18, pp.15592-15598 |
31 |
원문
|
|
Journal
|
2016 |
Thermoelectric Cooler Module with Enhanced Cooling Ability Using a Hybrid Cu Paste and a Si Substrate
Bae Hyun-Cheol Journal of Nanoscience and Nanotechnology, v.16, no.12, pp.12732-12736 |
2 |
원문
|
|
Journal
|
2016 |
Surface Al Doping of 4H-SiC Via Low Temperature Annealing
Junbo Park Applied Physics Letters, v.109, no.3, pp.1-5 |
5 |
원문
|
|
Conference
|
2016 |
The Effect of n-type Window Layer on the Performance of Amorphous Si:H Thin Film Solar Cells
Jung Kwang Hoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
|
Journal
|
2015 |
CuOx/a-Si:H Heterojunction Thin-Film Solar Cell with an N-Type uc-Si:H Depletion-Assisting Layer
Lee Seong Hyun Progress in Photovoltaics : Research and Applications, v.23, no.11, pp.1642-1648 |
12 |
원문
|
|
Conference
|
2015 |
The Effect of the Crystallinity of P- and N-Type Si Layers on the Performance of Substrate-Type A-Si:H Thin Film Solar Cells on Opaque Substrates
Lee Yoo Jeong International Forum on Functional Materials (IFFM) 2015, pp.388-388 |
|
|
|
Conference
|
2014 |
The Effect of Crystallinity of the n-Type Si Layer on the Performance of Substrate-Type a-Si:H Thin Film Solar Cells
Lee Yoo Jeong European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2014, pp.1-2 |
|
|
|
Conference
|
2013 |
CuOx/a-Si:H Heterojunction Thin-film Solar Cell with an n-type μc-Si:H Depletion-assisting Layer
Lee Seong Hyun Global Photovoltaic Conference (GPVC) 2013, pp.1-1 |
12 |
|
|
Journal
|
2013 |
Understanding the influence of doping in efficient phosphorescent organic light-emitting diodes with an organic p–i–n homojunction
Changhun Yun Organic Electronics, v.14, no.7, pp.1695-1703 |
22 |
원문
|
|
Journal
|
2013 |
Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
Rae-Man Park Electronic Materials Letters, v.9, no.4, pp.467-469 |
6 |
원문
|
|
Journal
|
2013 |
Low-Voltage, High Speed Inkjet-Printed Flexible Complementary Polymer Electronic Circuits
백강준 Organic Electronics, v.14, no.5, pp.1407-1418 |
64 |
원문
|
|
Journal
|
2012 |
Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits
Kang-Jun Baeg ACS Applied Materials & Interfaces, v.4, no.11, pp.6176-6184 |
82 |
원문
|
|
Journal
|
2012 |
Label-Free and Real-Time Immunodetection of the Avian Influenza A Hemagglutinin Peptide Using a Silicon Field-Effect Transistor Fabricated by a Nickel Self-Aligned Silicide Process
Hong Hyo Bong Materials Transactions, v.53, no.9, pp.1633-1637 |
16 |
원문
|
|
Journal
|
2012 |
Evaluation of Seebeck coefficients in n- and p-type silicon nanowires fabricated by complementary metal–oxide–semiconductor technology
Hyun Younghoon Nanotechnology, v.23, no.40, pp.1-7 |
13 |
원문
|
|
Journal
|
2012 |
Top-Down Processed Silicon Nanowires for Thermoelectric Applications
Jang Moon Gyu Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3552-3554 |
7 |
원문
|
|
Journal
|
2012 |
The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
Jang Moon Gyu Thin Solid Films, v.520, no.6, pp.2166-2169 |
1 |
원문
|
|
Journal
|
2011 |
Green Emission of Silicon Quantum Dot Light-emitting Diodes Caused by Enhanced Carrier Injection
김백현 Journal of the Korean Physical Society, v.59, no.3, pp.L2183-L2186 |
1 |
원문
|
|
Journal
|
2011 |
Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation
Jun Myungsim Journal of Nanoscience and Nanotechnology, v.11, no.8, pp.7339-7342 |
0 |
원문
|
|
Journal
|
2011 |
Improved Performance Uniformity of Inkjet Printed N-channel Organic Field-effect Transistors and Complementary Inverters
Kang-Jun Baeg Organic Electronics, v.12, no.4, pp.634-640 |
66 |
원문
|
|
Journal
|
2011 |
High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductors
Kang-Jun Baeg Journal of Polymer Science Part B : Polymer Physics, v.49, no.1, pp.62-67 |
103 |
원문
|
|
Journal
|
2009 |
Chalcogen-based thin film transistor using CuInSe2 photo-active layer
김경암 Current Applied Physics, v.9, no.6, pp.1326-1329 |
5 |
원문
|
|
Journal
|
2009 |
Effect of Silicidation on Silicon-Based Thin Film Resistors in SiGe Integrated Circuits
Lee Sang-Heung Journal of Materials Science : Materials in Electronics, v.20, no.4, pp.354-359 |
0 |
원문
|
|
Conference
|
2009 |
P‐8: Effects of Active Thickness in Oxide Semiconductor TFTs
Hwang Chi-Sun Society for Information Display (SID) International Symposium 2009, pp.1107-1109 |
10 |
원문
|
|
Journal
|
2009 |
Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain
Yang Jong-Heon Thin Solid Films, v.517, no.5, pp.1825-1828 |
5 |
원문
|
|
Journal
|
2008 |
Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions
신진욱 IEEE Electron Device Letters, v.29, no.12, pp.1336-1339 |
4 |
원문
|
|
Journal
|
2008 |
Transparent Thin-film Transistors with Zinc Oxide Semiconductor Fabricated by Reactive Sputtering using Metallic Zinc target
Cheong Woo-Seok Thin Solid Films, v.516, no.22, pp.8159-5164 |
12 |
원문
|
|
Journal
|
2008 |
Chalcogenide Thin-Film Transistors using Oxygenated n-type and p-type Phase Change Materials
Song Kibong Applied Physics Letters, v.93, no.4, pp.1-3 |
25 |
원문
|
|
Conference
|
2008 |
High Performance Schottky Barrier MOSFETs with Workfunction Engineering
Jang Moon Gyu Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2 |
1 |
원문
|
|
Journal
|
2008 |
Effects of an Undoped Si1_xCx Buffer Layer on Performance of Si Nanocrystal Light-Emitting Diodes
Huh Chul Electrochemical and Solid-State Letters, v.11, no.7, pp.H189-H192 |
1 |
원문
|
|
Journal
|
2008 |
Analysis of Temperature-dependent Barrier Heights in Erbium-silicided Schottky Diodes
Jun Myung Sim Journal of Vacuum Science and Technology B, v.26, no.1, pp.137-140 |
8 |
원문
|
|
Journal
|
2007 |
Silicon-based Thin Films as Bottom Electrodes in Chalcogenide Nonvolatile Memories
Lee Seung-Yun Applied Surface Science, v.254, no.1, pp.312-315 |
3 |
원문
|
|
Conference
|
2007 |
Fabrication of a Direct-Type Silicon Pixel Detector for a Large Area Hybrid X-Ray Imaging Device
Park Kun Sik Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) 2007, pp.3446-3449 |
1 |
원문
|
|
Journal
|
2007 |
Electrical and microstructural properties of low‐resistance Ti/Re/Au ohmic contacts to n‐type GaN
V. Rajagopal Reddy Physica Status Solidi (A), v.204, no.10, pp.3392-3397 |
0 |
원문
|
|
Journal
|
2007 |
Ultrasensitive, Label-free, and Real-time Immunodetection using Silicon Field-effect Transistors
Kim Ansoon Applied Physics Letters, v.91, no.10, pp.1-3 |
244 |
원문
|
|
Journal
|
2007 |
Consideration of the Leakage-Current and the Radiation-Response Characteristics of Silicon PIN Detectors with Different N-Type Substrates and their Application to a Personal γ-ray Dosimeter
Park Jong-Moon Journal of the Korean Physical Society, v.51, no.1, pp.10-17 |
|
|
|
Journal
|
2007 |
Characteristics of N-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
박병철 Journal of the Korean Physical Society, v.50, no.3, pp.893-896 |
|
|
|
Journal
|
2006 |
Photoreflectance Interference in Dielectric Single Heterojunctions
Lee Kyu-Seok Journal of the Korean Physical Society, v.49, no.5, pp.2045-2048 |
|
|
|
Conference
|
2006 |
The Diode Consisted of N-Type and P-Type CdS thin film Prepared by CBD Process
Cho Doo-Hee 광자기술 학술 회의 (PC) 2006, pp.1-2 |
|
|
|
Conference
|
2006 |
Characteristics of N-Type SB-MOSFETs using Metal-Gate & High-K
박병철 International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-1 |
|
|
|
Conference
|
2006 |
Measurement of the Electric and Optical Characteristics of the Hetero-Junction with n-CIS/p-CuSe
Lee Sang Su 한국광학회 학술 발표회 (하계) 2006, pp.143-144 |
|
|
|
Conference
|
2006 |
10-nm-Gate-Length n-type Schottky barrier MOSFETs with High Current Drivability
Jang Moon Gyu Silicon Nanoelectronics Workshop (SNW) 2006, pp.1-2 |
|
|
|
Journal
|
2006 |
Fabrication of Nano-Gap Electrode Pairs Using Atomic-Layer-Deposited Sacrificial Layer and Shadow Deposition
Park Chan Woo Japanese Journal of Applied Physics, v.45, no.5A, pp.4293-4295 |
1 |
원문
|
|
Journal
|
2006 |
Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors
Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732 |
32 |
원문
|
|
Journal
|
2005 |
Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film
Yong Shin Kim Applied Physics Letters, v.86, no.21, pp.1-3 |
258 |
원문
|
|
Journal
|
2003 |
Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications
Jang Moon Gyu IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209 |
16 |
원문
|