학술지
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2022 |
Analysis of Temporal Carrier Build-up in Reconfigurable Field-effect Transistor
박정우 Electronics Letters, v.58 no.1, pp.35-37 |
0 |
원문
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학술지
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2021 |
The Potassium-Assisted P-Type Characteristics of Tin Oxide in Solution-Processed High-Performance Metal Oxide Thin-Film Transistors
남수지 Physica Status Solidi (A) - Applications and Materials Science, v.218 no.18, pp.1-7 |
1 |
원문
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학술지
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2021 |
Ultrafast Photoexcited-Carrier Behavior Induced by Hydrogen Ion Irradiation of a Cu(In,Ga)Se2 Thin Film in the Terahertz Region
이규석 IEEE Transactions on Terahertz Science and Technology, v.11 no.2, pp.175-182 |
5 |
원문
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학술지
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2021 |
Ultrafast Photoexcited-Carrier Behavior Induced by Hydrogen Ion Irradiation of a Cu(In,Ga)Se2 Thin Film in the Terahertz Region
이우정 IEEE Transactions on Terahertz Science and Technology, v.11 no.2, pp.175-182 |
5 |
원문
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학술지
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2021 |
Fabrication, Micro-structure Characteristics and Transport Properties of Co-evaporated Thin Flms of Bi2Te3 onAlN Coated Stainless Steel Foils
Aziz Ahmed Scientific Reports, v.11, pp.1-17 |
5 |
원문
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학술지
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2021 |
Cu/graphene Hybrid Transparent Conducting Electrodes for Organic Photovoltaic Devices
강주환 Carbon, v.171, pp.341-349 |
27 |
원문
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학술지
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2021 |
Cu/graphene Hybrid Transparent Conducting Electrodes for Organic Photovoltaic Devices
최수경 Carbon, v.171, pp.341-349 |
27 |
원문
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학술지
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2018 |
Facile Fabrication of Self-assembled ZnO Nanowire Network Channels and Its Gate-controlled UV Detection
장호찬 Nanoscale Research Letters, v.13, pp.1-9 |
12 |
원문
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학술지
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2018 |
Design and Characterization for Travelling Wave Electrodes of High-Speed Mach-Zehnder Electro-Optic Modulator on an N-doped InP Substrate
김성일 Microwave and Optical Technology Letters, v.60 no.6, pp.1558-1562 |
5 |
원문
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학술지
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2018 |
Computational Discovery of P-type Transparent Oxide Semiconductors using Hydrogen Descriptor
윤용 npj Computational Materials, v.4, pp.1-7 |
59 |
원문
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학술지
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2018 |
Computational Discovery of P-type Transparent Oxide Semiconductors using Hydrogen Descriptor
임강훈 npj Computational Materials, v.4, pp.1-7 |
59 |
원문
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학술지
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2017 |
Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters
이한솔 ACS Applied Materials & Interfaces, v.9 no.18, pp.15592-15598 |
28 |
원문
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학술지
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2016 |
Thermoelectric Cooler Module with Enhanced Cooling Ability Using a Hybrid Cu Paste and a Si Substrate
배현철 Journal of Nanoscience and Nanotechnology, v.16 no.12, pp.12732-12736 |
2 |
원문
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학술지
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2016 |
Surface Al Doping of 4H-SiC Via Low Temperature Annealing
박준보 Applied Physics Letters, v.109 no.3, pp.1-5 |
5 |
원문
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학술대회
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2016 |
The Effect of n-type Window Layer on the Performance of Amorphous Si:H Thin Film Solar Cells
정광훈 International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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학술지
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2015 |
CuOx/a-Si:H Heterojunction Thin-Film Solar Cell with an N-Type uc-Si:H Depletion-Assisting Layer
이성현 Progress in Photovoltaics : Research and Applications, v.23 no.11, pp.1642-1648 |
11 |
원문
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학술대회
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2015 |
The Effect of the Crystallinity of P- and N-Type Si Layers on the Performance of Substrate-Type A-Si:H Thin Film Solar Cells on Opaque Substrates
이유정 International Forum on Functional Materials (IFFM) 2015, pp.388-388 |
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학술대회
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2014 |
The Effect of Crystallinity of the n-Type Si Layer on the Performance of Substrate-Type a-Si:H Thin Film Solar Cells
이유정 European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2014, pp.1-2 |
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학술대회
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2013 |
CuOx/a-Si:H Heterojunction Thin-film Solar Cell with an n-type μc-Si:H Depletion-assisting Layer
Global Photovoltaic Conference (GPVC) 2013, pp.1-1 |
11 |
원문
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학술지
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2013 |
Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
박래만 Electronic Materials Letters, v.9 no.4, pp.467-469 |
6 |
원문
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학술지
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2013 |
Understanding the Influence of Doping in Efficient Phosphorescent Organic Light-Emitting Diodes with an Organic p-i-n Homojunction
Changhun Yun Organic Electronics, v.14 no.7, pp.1695-1703 |
22 |
원문
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학술지
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2013 |
Low-Voltage, High Speed Inkjet-Printed Flexible Complementary Polymer Electronic Circuits
백강준 Organic Electronics, v.14 no.5, pp.1407-1418 |
62 |
원문
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학술지
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2012 |
Label-Free and Real-Time Immunodetection of the Avian Influenza A Hemagglutinin Peptide Using a Silicon Field-Effect Transistor Fabricated by a Nickel Self-Aligned Silicide Process
홍효봉 Materials Transactions, v.53 no.9, pp.1633-1637 |
15 |
원문
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학술지
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2012 |
Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits
백강준 ACS Applied Materials & Interfaces, v.4 no.11, pp.6176-6184 |
76 |
원문
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학술지
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2012 |
Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits
백강준 Advanced Materials, v.24 no.40, pp.5433-5439 |
177 |
원문
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학술지
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2012 |
Evaluation of Seebeck Coefficients in n- and p-type Silicon Nanowires Fabricated by Complementary Metal-Oxide-Semiconductor Technology
현영훈 Nanotechnology, v.23 no.40, pp.1-7 |
13 |
원문
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학술지
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2012 |
Top-Down Processed Silicon Nanowires for Thermoelectric Applications
장문규 Journal of Nanoscience and Nanotechnology, v.12 no.4, pp.3552-3554 |
7 |
원문
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학술지
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2012 |
The Characteristics of Sub-10 nm Gate-length Erbium-Silicided n-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect-Transistors
장문규 Thin Solid Films, v.520 no.6, pp.2166-2169 |
1 |
원문
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학술지
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2012 |
The Characteristics of sub-10 nm Gate-length Erbium-silicided n-type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect-Transistors
장문규 Thin Solid Films, v.520 no.6, pp.2166-2169 |
1 |
원문
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학술지
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2011 |
Green Emission of Silicon Quantum Dot Light-emitting Diodes Caused by Enhanced Carrier Injection
김백현 Journal of the Korean Physical Society, v.59 no.3, pp.L2183-L2186 |
1 |
원문
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학술지
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2011 |
Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation
전명심 Journal of Nanoscience and Nanotechnology, v.11 no.8, pp.7339-7342 |
0 |
원문
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학술지
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2011 |
Improved Performance Uniformity of Inkjet Printed N-channel Organic Field-effect Transistors and Complementary Inverters
백강준 Organic Electronics, v.12 no.4, pp.634-640 |
61 |
원문
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학술지
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2011 |
High Speeds Complementary Integrated Circuits Fabricated with All-Printed Polymeric Semiconductors
백강준 Journal of Polymer Science Part B : Polymer Physics, v.49 no.1, pp.62-67 |
101 |
원문
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학술지
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2009 |
Chalcogen based thin Film Transistor using CuInSe2 Photo-Active Layer
김경암 Current Applied Physics, v.9 no.6, pp.1326-1329 |
5 |
원문
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학술지
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2009 |
Effect of Silicidation on Silicon-Based Thin Film Resistors in SiGe Integrated Circuits
이상흥 Journal of Materials Science : Materials in Electronics, v.20 no.4, pp.354-359 |
0 |
원문
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학술지
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2009 |
Fabrication of N-type Schottky Barrier Thin-film Transistor with Channel Length and Width of 0.1 μm and Erbium Silicide Source/Drain
양종헌 Thin Solid Films, v.517 no.5, pp.1825-1828 |
5 |
원문
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학술대회
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2009 |
Effects of Active Thickness in Oxide Semiconductor TFTs
황치선 Society for Information Display (SID) International Symposium 2009, pp.1107-1109 |
9 |
원문
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학술지
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2008 |
Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions
신진욱 IEEE Electron Device Letters, v.29 no.12, pp.1336-1339 |
4 |
원문
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학술지
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2008 |
Direct-Type Silicon Pixel Detector for a Large-Area Hybrid X-Ray Imaging Device
박건식 Journal of the Korean Physical Society, v.53 no.4, pp.2185-2191 |
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학술지
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2008 |
Transparent Thin-film Transistors with Zinc Oxide Semiconductor Fabricated by Reactive Sputtering using Metallic Zinc target
정우석 Thin Solid Films, v.516 no.22, pp.8159-5164 |
12 |
원문
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학술지
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2008 |
Chalcogenide Thin-Film Transistors using Oxygenated n-type and p-type Phase Change Materials
송기봉 Applied Physics Letters, v.93 no.4, pp.1-3 |
24 |
원문
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학술대회
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2008 |
High Performance Schottky Barrier MOSFETs with Workfunction Engineering
장문규 Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2 |
1 |
원문
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학술지
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2008 |
Effects of an Undoped Si1_xCx Buffer Layer on Performance of Si Nanocrystal Light-Emitting Diodes
허철 Electrochemical and Solid-State Letters, v.11 no.7, pp.H189-H192 |
1 |
원문
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학술지
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2008 |
Analysis of Temperature-dependent Barrier Heights in Erbium-silicided Schottky Diodes
전명심 Journal of Vacuum Science and Technology B, v.26 no.1, pp.137-140 |
8 |
원문
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학술지
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2007 |
Electrical and Microstructural Properties of Lresistance Ti/Re/Au Ohmic Contacts to n-type GaN
V. Rajagopal Reddy Physica Status Solidi (A), v.204 no.10, pp.3392-3397 |
0 |
원문
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학술지
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2007 |
Silicon-based Thin Films as Bottom Electrodes in Chalcogenide Nonvolatile Memories
이승윤 Applied Surface Science, v.254 no.1, pp.312-315 |
3 |
원문
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학술대회
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2007 |
Fabrication of a Direct-Type Silicon Pixel Detector for a Large Area Hybrid X-Ray Imaging Device
박건식 Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) 2007, pp.3446-3449 |
1 |
원문
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학술지
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2007 |
Ultrasensitive, Label-free, and Real-time Immunodetection using Silicon Field-effect Transistors
김안순 Applied Physics Letters, v.91 no.10, pp.1-3 |
240 |
원문
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학술지
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2007 |
Consideration of the Leakage-Current and the Radiation-Response Characteristics of Silicon PIN Detectors with Different N-Type Substrates and their Application to a Personal γ-ray Dosimeter
박종문 Journal of the Korean Physical Society, v.51 no.1, pp.10-17 |
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학술지
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2007 |
Estimates of the Photo-Response Characteristics of a Non-Fully-Depleted Silicon p-i-n Photodiode for the Near Infrared Spectral Range and the Experimental Results
박건식 Journal of the Korean Physical Society, v.50 no.4, pp.1156-1162 |
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학술지
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2007 |
Characteristics of N-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
박병철 Journal of the Korean Physical Society, v.50 no.3, pp.893-896 |
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학술대회
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2006 |
CBD 방법으로 제조한 N-Type 및 P-Type CdS 박막을 이용한 다이오드 제작
조두희 광자기술 학술 회의 (PC) 2006, pp.1-2 |
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학술지
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2006 |
Photoreflectance Interference in Dielectric Single Heterojunctions
이규석 Journal of the Korean Physical Society, v.49 no.5, pp.2045-2048 |
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학술대회
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2006 |
Characteristics of N-Type SB-MOSFETs using Metal-Gate & High-K
박병철 International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-1 |
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학술대회
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2006 |
n-type CIS 와 p-type CuSe의 이종 접합 구조에서의 전류 특성 및 광 특성 측정
이상수 한국광학회 학술 발표회 (하계) 2006, pp.143-144 |
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학술대회
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2006 |
10-nm-Gate-Length n-type Schottky barrier MOSFETs with High Current Drivability
장문규 Silicon Nanoelectronics Workshop (SNW) 2006, pp.1-2 |
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학술지
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2006 |
Fabrication of Nano-Gap Electrode Pairs Using Atomic-Layer-Deposited Sacrificial Layer and Shadow Deposition
박찬우 Japanese Journal of Applied Physics, v.45 no.5A, pp.4293-4295 |
1 |
원문
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학술지
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2006 |
Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors
장문규 Japanese Journal of Applied Physics, v.45 no.2A, pp.730-732 |
32 |
원문
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학술지
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2005 |
Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film
김용신 Applied Physics Letters, v.86 no.21, pp.1-3 |
255 |
원문
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학술지
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2003 |
Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications
장문규 IEEE Transactions on Nanotechnology, v.2 no.4, pp.205-209 |
16 |
원문
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