Subjects : Off current

Articles (57)
Patents (2)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2025	Electrical properties and conduction mechanisms of ε-GaSe films for selector and phase-change memory applications Lim Soyoung Applied Surface Science, v.682, pp.1-8	1
Journal	2024	Characteristics of Ultrathin Indium Oxide Thin‐Film Transistors with Diverse Channel Lengths Fabricated by Atomic Layer Deposition Juhun Lee Physica Status Solidi (B): Basic Research, v.261, no.7, pp.1-6	2
Journal	2024	Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography Sung Chihun IEEE Electron Device Letters, v.45, no.6, pp.1020-1023	1
Journal	2024	Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer Choi Kyunghee ACS Applied Materials & Interfaces, v.16, no.18, pp.23459-23466	2
Journal	2023	Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer Jeonggil Kim Micromachines, v.14, no.6, pp.1-10	5
Journal	2023	Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer 이준혁 Micromachines, v.14, no.6, pp.1-10	5
Journal	2021	Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors Chihun Sung IEEE Electron Device Letters, v.42, no.9, pp.1327-1330	7
Journal	2021	Polyvinylalcohol (PVA)-Assisted Exfoliation of ReS2 Nanosheets and the Use of ReS2-PVA Composites for Transparent Memristive Photosynapse Devices Jung Kwang Hoon ACS Applied Materials & Interfaces, v.13, no.7, pp.8919-8928	14
Journal	2019	Cone-jet Printing of Aligned Silver Nanowire/poly(ethylene oxide) Composite Electrodes for Organic Thin-film Transistors 김경훈 Organic Electronics, v.69, pp.190-199	35
Journal	2019	Cone-jet Printing of Aligned Silver Nanowire/poly(ethylene oxide) Composite Electrodes for Organic Thin-film Transistors Xinlin Li Organic Electronics, v.69, pp.190-199	35
Journal	2018	Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface Kim Tae Yoon ACS Applied Materials & Interfaces, v.10, no.31, pp.26405-26412	14
Journal	2018	Metal-Agglomeration-Suppressed Growth of MoS2 and MoSe2 Films with Small Sulfur and Selenium Molecules for High Mobility Field Effect Transistor Applications Jung Kwang Hoon Nanoscale, v.10, no.32, pp.15213-15221	10
Journal	2018	Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors Yeonwha Oh Science of Advanced Materials, v.10, no.4, pp.518-521
Journal	2018	Low-Temperature Solution-Processed Zinc Oxide Field Effect Transistor by Blending Zinc Hydroxide and Zinc Oxide Nanoparticle in Aqueous Solutions 신현우 Japanese Journal of Applied Physics, v.57, no.5S, pp.1-5	5
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 조영우 Solid-State Electronics, v.141, pp.7-12	9
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 손동혁 Solid-State Electronics, v.141, pp.7-12	9
Journal	2018	Na-Cation-Assisted Exfoliation of MX2 (M = Mo, W; X = S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer-Nanocomposite Memory Applications 연창봉 Small, v.14, no.2, pp.1-10	23
Conference	2017	80‐3: Design of Spatial Light Modulator on Glass using Oxide TFTs with Lower Off‐state Current Jae-Eun Pi Society for Information Display (SID) International Symposium 2017, pp.1178-1181	1
Journal	2017	The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors Jae Won Do Thin Solid Films, v.628, pp.31-35	10
Journal	2017	Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs Sungjae Chang IEEE Electron Device Letters, v.38, no.4, pp.441-444	14
Journal	2016	A Low Temperature, Solution-Processed Poly(4-vinylphenol), YOx Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor Shin Hyun Woo Journal of Nanoscience and Nanotechnology, v.16, no.3, pp.2632-2636	3
Journal	2014	Electrical Properties of Solution-Deposited ZnO Thin-Film Transistors by Low-Temperature Annealing Lim Sang Chul Journal of Nanoscience and Nanotechnology, v.14, no.11, pp.8665-8670	8
Journal	2014	Device Characteristics of Inkjet-Printed ZnO TFTs by Solution Process Lim Sang Chul Japanese Journal of Applied Physics, v.53, no.5S3, pp.1-5	8
Journal	2013	Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices 최민섭 Nature Communications, v.4, pp.1-7	602
Journal	2012	Pressure Control Organic Vapor Deposition Methods for Fabricating Organic Thin-Film Transistors Seongdeok Ahn ETRI Journal, v.34, no.6, pp.970-973	3
Conference	2012	Electronic Characteristics of ZnO Thin Film Transistors by Low-temperature Process Lim Sang Chul International Meeting on Information Display (IMID) 2012, pp.1-2
Journal	2012	Effect of Curing Temperature on Nano-Silver Paste Ink for Organic Thin-Film Transistors Minseok Kim Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3272-3275	7
Journal	2012	The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors Jang Moon Gyu Thin Solid Films, v.520, no.6, pp.2166-2169	1
Journal	2011	Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs Jun Myungsim Semiconductor Science and Technology, v.26, no.12, pp.1-4	0
Journal	2011	High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4	1
Journal	2010	Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application Musarrat Hasan Electrochemical and Solid-State Letters, v.13, no.3, pp.H80-H82	2
Conference	2010	High Speed Lightening of CNT Field Emission Backlight for LCD by Enhanced Turn-off Current Driving Method Jeong Jin Woo International Display Workshops (IDW) 2010, pp.2017-2018
Conference	2010	Impulsive Operation of Carbon Nano Tube Field Emission Back Light by Enhanced Turn-off Current Driving Method Yoon-Ho Song International Meeting on Information Display (IMID) 2010 / International Display Manufacturing Conference (IDMC) 2010 / Asia Display 2010, pp.723-724
Journal	2010	Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor Jang Moon Gyu Journal of Vacuum Science and Technology B, v.28, no.4, pp.799-801	6
Journal	2010	Variations in the Electric Characteristics of an Organic Schottky Diode with the P3HT Thickness Kim Kang Dae Journal of the Korean Physical Society, v.57, no.1, pp.124-127	10
Journal	2010	Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer Yoon Sung Min Journal of the Electrochemical Society, v.157, no.7, pp.H771-H778	3
Journal	2010	Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator Yoon Sung Min Electrochemical and Solid-State Letters, v.13, no.5, pp.H141-H143	17
Conference	2009	21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane Cho Doo-Hee Society for Information Display (SID) International Symposium 2009, pp.280-283	29
Journal	2009	Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique 문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624	6
Journal	2009	Fabrication of N- and P-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods 신진욱 Japanese Journal of Applied Physics, v.48, no.4, pp.1-4	0
Journal	2009	Transparent Oxide Thin-Film Transistors Composed of Al and Sn-Doped Zinc Indium Oxide Cho Doo-Hee IEEE Electron Device Letters, v.30, no.1, pp.48-50	18
Journal	2009	Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477	1
Journal	2008	Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions 신진욱 IEEE Electron Device Letters, v.29, no.12, pp.1336-1339	4
Journal	2008	Downscaling of Organic Field‐Effect Transistors with a Polyelectrolyte Gate Insulator Lars Herlogsson Advanced Materials, v.20, no.24, pp.4708-4713	140
Journal	2008	Synergistic Effect of Polymer and Oligomer Blends for Solution-processable Organic Thin-film Transistors 임은희 Organic Electronics, v.9, no.6, pp.952-958	12
Journal	2008	20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors Jang Moon Gyu Applied Physics Letters, v.93, no.19, pp.1-3	11
Conference	2008	P‐28: ZnO TFTs Fabricated at Room Temperature by Solution Process Ji-Young Oh Society for Information Display (SID) International Symposium 2008, pp.1274-1276	8
Journal	2008	High-gain and Low-hysteresis Properties of Organic Inverters with an UV-photo Patternable Gate Dielectrics Lim Sangchul Thin Solid Films, v.516, no.12, pp.4330-4333	5
Journal	2007	Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition Park Sang-Hee Electrochemical and Solid-State Letters, v.11, no.1, pp.H10-H14	104
Journal	2007	Characteristics of Pentacene Thin Film Transistor with Al2O3 Gate Dielectrics on Plastic Substrate Lim Jungwook Electrochemical and Solid-State Letters, v.10, no.10, pp.J36-J38	8
Journal	2007	Pentacene Thin-film Transistors and Inverters with Plasma-enhanced Atomic-layer-deposited Al2O3 Gate Dielectric Koo Jae Bon Thin Solid Films, v.515, no.5, pp.3132-3137	26
Journal	2007	Doping Effect of Solution-processed Thin-film Transistors based on Polyfluorene 임은희 Journal of Materials Chemistry, v.17, no.14, pp.1416-1420	68
Journal	2006	Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732	32
Journal	2006	The Effects of Surface Treatment on Device Performance in Pentacene-based thin Film Transistor Koo Jae Bon Synthetic Metals, v.156, no.2-4, pp.99-103	38
Conference	2005	Fabrication of High Performance Low Temperature Poly-Si(LTPS) on Flexible Metal Foil Park Dong Jin International Display Workshops in Conjunction with Asia Display (IDW/AD) 2005, pp.1-4
Journal	2004	고성능 저온 폴리실리콘 소자 특성 Kim Yong Hae IEEE Electron Device Letters, v.25, no.8, pp.550-552	27
Journal	2003	Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications Jang Moon Gyu IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209	16

특허 검색결과
Status	Year	Patent Name	Country	Family Pat.	KIPRIS
Registered	2010	REFERENCE VOLTAGE SUPPLY CIRCUIT	UNITED STATES
Registered	2008	Active-Matrix Field Emission Display and Its Driving Method	UNITED STATES

연구보고서 검색결과
Type	Year	Research Project	Primary Investigator	Download
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