Subjects : Breakdown Voltage

Articles (57)
Patents (2)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2024	Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode Lee Hun Ki JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.42, no.4, pp.1-10	2
Journal	2024	β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV Kyu Jun Cho Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5	2
Conference	2024	High breakdown voltage, low specific on-resistance GaN on GaN PiN diodes with low contact resistance on p-type GaN for high power applications Kim Donghan Materials Research Society (MRS) Meeting 2024 (Spring), pp.1-2
Journal	2023	Human body model electrostatic discharge tester using metal oxide semiconductor‐controlled thyristors Jung Dong Yun ETRI Journal, v.45, no.3, pp.543-550	2
Journal	2021	Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode Jae-Sik Sim ETRI Journal, v.43, no.5, pp.916-922	2
Journal	2021	Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435
Journal	2019	Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect 황인태 Applied Sciences, v.9, no.17, pp.1-13	6
Journal	2019	2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate Mun Jae Kyoung ECS Journal of Solid State Science and Technology, v.8, no.7, pp.3079-3082	118
Journal	2019	DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure 곽현탁 Journal of Nanoscience and Nanotechnology, v.19, no.4, pp.2319-2322
Journal	2018	NDR-effect Vertical-illumination-type Ge-on-Si Avalanche Photodetector Kim Gyungock Optics Letters, v.43, no.22, pp.5583-5586	21
Journal	2018	High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier 이준혁 IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186	39
Journal	2018	Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure 곽현탁 Applied Sciences, v.8, no.6, pp.1-14	25
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 조영우 Solid-State Electronics, v.141, pp.7-12	9
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 손동혁 Solid-State Electronics, v.141, pp.7-12	9
Journal	2017	Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure Lee Hyun Soo Journal of Semiconductor Technology and Science, v.17, no.3, pp.354-362	1
Journal	2017	Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems Jung Dong Yun ETRI Journal, v.39, no.1, pp.62-68	16
Journal	2016	Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410	28
Journal	2016	High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications Kim Sang Gi Transactions on Electrical and Electronic Materials, v.17, no.5, pp.301-304	0
Journal	2016	Surface Al Doping of 4H-SiC Via Low Temperature Annealing Junbo Park Applied Physics Letters, v.109, no.3, pp.1-5	5
Conference	2016	Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact Kim Zin-Sig 대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403
Conference	2016	Analysis of High-Density Trench Gate MOSFET using SIde-wall Spacer Technology Kim Sang Gi International Conference on Electronics, Information and Communication (ICEIC) 2016, pp.751-752
Conference	2016	BCD Technology with an integrated Trench Gate MOSFET for Smart Power IC Won Jong Il International Conference on Electronics, Information and Communication (ICEIC) 2016, pp.745-746
Conference	2015	Improving Breakdown Voltage of SiC Schottky Barrier Diode using Field Metal Ring Structure Junbo Park International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1
Journal	2015	0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal Lee Hyun Soo IEEE Electron Device Letters, v.36, no.11, pp.1132-1134	51
Journal	2015	High-Voltage 4H-SiC Trench MOS Barrier Schottky Rectifier with Low Forward Voltage Drop Using Enhanced Sidewall Layer Cho Doo Hyung Japanese Journal of Applied Physics, v.54, no.12, pp.1-5	6
Journal	2015	Power Trench Gate MOSFET with an Integrated 6-Pack Configuration for a 3-Phase Inverter Won Jong Il Journal of the Korean Physical Society, v.67, no.7, pp.1214-1221	2
Conference	2015	700 V / 20 A Double AlGaN/GaN Lateral Schottky Barrier Diodes with Recessed Anode Structure on Silicon Substrate 나제호 International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2
Conference	2015	Effects on Breakdown Voltage Characteristics of Various Field Plates in GaN FETs Woojin Chang International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2
Journal	2015	Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs Kyu Jun Cho Journal of the Korean Physical Society, v.67, no.4, pp.682-686	3
Journal	2015	DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2 Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657	3
Conference	2015	Effects on Breakdown Voltages of GaN FETs for Field Plate Structures Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2015, pp.326-329
Journal	2014	Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate Hokyun Ahn Solid-State Electronics, v.95, pp.42-45	18
Conference	2014	Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1
Journal	2013	Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment Jong-Won Lim Thin Solid Films, v.547, pp.106-110	10
Journal	2013	Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG-Doped Deep Trench of p-Pillar Kim Sang Gi ETRI Journal, v.35, no.4, pp.632-637	8
Conference	2013	Effects of Various Field Plates for Normally-Off GaN MISFETs Woojin Chang International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2013, pp.332-333
Conference	2013	A Novel Super-Junction Trench Gate MOSFET Fabricated Using High Aspect-Ratio Trench Etching and Boron Lateral Diffusion Technologies Kim Sang Gi International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2013, pp.233-236	5
Journal	2012	Simulation and Fabrication Studies of Semi-SuperJunction Trench Power MOSFETs by RSO Process with Silicon Nitride Layer Na Kyoung Il ETRI Journal, v.34, no.6, pp.962-965	16
Journal	2012	K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors Park Young Rak Microwave and Optical Technology Letters, v.54, no.11, pp.2624-2626	0
Journal	2012	A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556	2
Journal	2011	Dependences of the Characteristics of an InGaP/GaAs HBT for Applications in Power Amplifiers on the Structural Parameters Min Byoung-Gue Journal of the Korean Physical Society, v.59, no.21, pp.435-438	2
Conference	2011	A new vertical GaN SBD employing in-situ metallic gallium ohmic contact 임지용 International Symposium on Power Semiconductor Devices (ISPSD) 2011, pp.247-250	7
Journal	2010	High-Density Nano-Scale N-Channel Trench-Gated MOSFETs Using the Self-Aligned Technique Kim Sang Gi Journal of the Korean Physical Society, v.57, no.4, pp.802-805	3
Journal	2008	Organic Field-effect Transistors with Thermal-cured Polyacrylate Gate Dielectric Films Gi Heon Kim Thin Solid Films, v.516, no.7, pp.1574-1577	4
Conference	2007	Fabrication of a Direct-Type Silicon Pixel Detector for a Large Area Hybrid X-Ray Imaging Device Park Kun Sik Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) 2007, pp.3446-3449	1
Conference	2007	Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel Hyung Sup Yoon International Conference on Indium Phosphide and Related Materials (IPRM) 2007, pp.110-113	0
Journal	2007	Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates Hyung Sup Yoon Journal of the Korean Physical Society, v.50, no.3, pp.889-892	4
Journal	2006	Dependence of the DC and the RF Characteristics of InGaAs /InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness Kim Yong Won Journal of the Korean Physical Society, v.49, no.3, pp.1202-1206
Conference	2006	A Fully-Integrated +23-dBm CMOS Triple Cascode Linear Power Amplifier with Inner-Parallel Power Control Scheme 오형석 Radio Frequency Integrated Circuits Symposium (RFIC) 2006, pp.141-144	12
Journal	2006	A New Strained-Si Channel High Voltage MOSFET for High Performance Power Applications Cho Young Kyun ETRI Journal, v.28, no.2, pp.253-256	10
Journal	2006	Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies Lee Seung-Yun Solid-State Electronics, v.50, no.3, pp.333-339	4
Journal	2005	Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers 한성주 IEEE Transactions on Device and Materials Reliability, v.5, no.2, pp.262-267	6
Journal	2004	A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC 손원소 ETRI Journal, v.26, no.1, pp.7-12	6
Journal	2003	Reduced Cell Pitch and On-resistance of Trench MOSFET by Employing Source on Trench Sidewall Park Il-Yong Electronics Letters, v.39, no.19, pp.1414-1415	1
Journal	2002	A Novel Process for Fabricating a High Density Trench MOSFETs for DC-DC Converters Kim Jongdae ETRI Journal, v.24, no.5, pp.333-340	24
Journal	2002	Reliability of planar InP-InGaAs avalanche photodiodes with recess etching Jihoun Jung IEEE Photonics Technology Letters, v.14, no.8, pp.1160-1162	16
Journal	2002	Breakdown Voltage Improvement of p-LDMOSFET with an Uneven Racetrack Source for PDP Driver IC Applications Roh Tae Moon ETRI Journal, v.24, no.4, pp.328-331	8

특허 검색결과
Status	Year	Patent Name	Country	Family Pat.	KIPRIS
Registered	2011	The Structure and its Fabrication Methods of Switching Device with embedded capac itor for High Power Radio Frequency Control Circuits	UNITED STATES
Registered	2005	HIGH VOLTAGE MOSFET HAVING Si/SiGe HETEROJUNCTION STRUCTURE AND METHOD OF MANUFACTURING THE SAME	UNITED STATES

연구보고서 검색결과
Type	Year	Research Project	Primary Investigator	Download
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