학술지
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2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
장성재 Nanomaterials, v.13 no.5, pp.1-13 |
0 |
원문
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학술지
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2022 |
Characteristics of PEALD-Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors
김지은 Advanced Electronic Materials, v.8 no.4, pp.1-8 |
4 |
원문
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학술지
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2022 |
Double-Gate and Body-Contacted Nonvolatile Oxide Memory Thin-Film Transistors for Fast Erase Programming
양종헌 IEEE Transactions on Electron Devices, v.69 no.1, pp.120-126 |
0 |
원문
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학술지
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2020 |
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
장성재 Nanomaterials, v.10 no.11, pp.1-11 |
8 |
원문
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학술지
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2020 |
Multi-wafer-scale Growth of WSe2 Films using a Traveling Flow-type Reactor with a Remote Thermal Se Cracker
윤선진 Applied Surface Science, v.528, pp.1-8 |
0 |
원문
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학술지
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2020 |
Multi-wafer-scale Growth of WSe2 Films using a Traveling Flow-type Reactor with a Remote Thermal Se Cracker
강항 Applied Surface Science, v.528, pp.1-8 |
0 |
원문
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학술지
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2019 |
Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs
장성재 ECS Journal of Solid State Science and Technology, v.8 no.12, pp.245-248 |
10 |
원문
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학술지
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2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
김성일 Journal of the Korean Physical Society, v.74 no.2, pp.196-200 |
4 |
원문
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학술대회
|
2018 |
The Effect of Aluminum in the Oxide Thin-Film Transistor
최지훈 European Materials Research Society (E-MRS) Meeting 2018 (Spring), pp.1-1 |
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학술지
|
2017 |
1-μm Short-Channel Oxide Thin-Film Transistors With Triangular Gate Spacer
최지훈 IEEE Electron Device Letters, v.38 no.10, pp.1398-1400 |
11 |
원문
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학술대회
|
2016 |
Double-Channel Oxide Semiconductor Vertical TFTs with Mo Source/Drain Layer
황치선 International Display Workshops in conjunction with Asia Display (IDW/AD) 2016, pp.274-276 |
0 |
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학술지
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2016 |
InGaZnO-Based Stretchable Ferroelectric Memory Transistor Using Patterned Polyimide/Polydimethylsiloxane Hybrid Substrate
나복순 Journal of Nanoscience and Nanotechnology, v.16 no.10, pp.10280-10283 |
5 |
원문
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학술지
|
2016 |
A Low Temperature, Solution-Processed Poly(4-vinylphenol), YOx Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor
신현우 Journal of Nanoscience and Nanotechnology, v.16 no.3, pp.2632-2636 |
3 |
원문
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학술지
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2016 |
Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer
정순원 Journal of Nanoscience and Nanotechnology, v.16 no.3, pp.2752-2755 |
13 |
원문
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학술지
|
2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide-Semiconductor Thin-Film Transistors for Low-Power Consumption
김경아 IEEE Transactions on Electron Devices, v.63 no.1, pp.394-401 |
5 |
원문
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학술지
|
2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide-Semiconductor Thin-Film Transistors for Low-Power Consumption
변춘원 IEEE Transactions on Electron Devices, v.63 no.1, pp.394-401 |
5 |
원문
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학술지
|
2015 |
Fabrication of Stretchable Organic-Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures
정순원 Journal of Nanoscience and Nanotechnology, v.15 no.10, pp.7526-7530 |
8 |
원문
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학술지
|
2015 |
Thickness Modulation Effects of Al2O3 Capping Layers on Device Performance for the Top-Gate Thin-Film Transistors Using Solution-Processed Poly(4-Vinyl Phenol)/Zn-Sn-O Gate Stacks
김경아 Journal of Vacuum Science and Technology B, v.33 no.3, pp.1-7 |
1 |
원문
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학술지
|
2015 |
Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer
정순원 Organic Electronics, v.16, pp.46-53 |
43 |
원문
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학술대회
|
2014 |
The Effects of Post-Deposition Treatments of Gate Insulator on the Electrical Properties of IZO-Based Oxide TFTs
송창우 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2014, pp.1-1 |
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학술지
|
2014 |
Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method
황치선 IEEE Electron Device Letters, v.35 no.3, pp.360-362 |
50 |
원문
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학술지
|
2013 |
Nonvolatile Memory Performance Improvements for Solution-Processed Thin-Film Transistors with Composition-Modified In-Zn-Ti-O Active Channel and Ferroelectric Copolymer Gate Insulator
박준용 Organic Electronics, v.14 no.9, pp.2148-2157 |
6 |
원문
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학술지
|
2013 |
Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
박래만 Electronic Materials Letters, v.9 no.4, pp.467-469 |
6 |
원문
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학술대회
|
2012 |
Printed Indium Zinc Oxide Nonvolatile Memory Thin-film Transistors with P(VDF-TrFE) Gate Insulator
Asian Meeting on Ferroelectrics (AMF) 2012, pp.1-1 |
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학술대회
|
2012 |
Effects of the NH Content of PECVD Grown SiNx Gate Insulator on the Electrical Performance and Stability of Ti, B-doped InZnO Thin Film Transistors
MRS Meeting 2012 (Fall), pp.1-1 |
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학술대회
|
2012 |
Nonvolatile Memory Operations of Solution-Processed In-Zn-Ti-O Thin-Film Transistors with Ferroelectric Copolymer Gate Insulator
MRS Meeting 2012 (Fall), pp.1-1 |
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학술대회
|
2012 |
Electrical characteristic of IGZO oxide TFT with 3 layer gate insulator
International Workshop on Flexible and Printable Electronics (IWFPE) 2012, pp.1-3 |
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학술대회
|
2012 |
Effects of the rf power of PECVD for gate insulator deposition on the electrical performance and stability of Ti, B-doped InZnO thin film transistors
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) 2012, pp.1-1 |
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학술대회
|
2012 |
The thermal annealing effects of gate insulator on the electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors
International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1 |
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학술대회
|
2012 |
Nonvolatile Memory Thin-Film Transistors using Organic Ferroelectric Gate Insulator
Optics+Photonics 2012, pp.1-1 |
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학술대회
|
2012 |
Change of electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors depending on gate insulators
International Conference on Microelectronics and Plasma Technology (ICMAP) 2012, pp.1-1 |
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학술대회
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2012 |
Study on the E/D - mode AlGaN/GaN MISFET with Al2O3 gate insulator grown by Atomic Layer Deposition
International Confernece on Microelectronics and Plasma Technology (ICMAP) 2012, pp.1-1 |
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학술대회
|
2011 |
Flexible Thin Film Transistor with Organic Gate Insulator and IGZO as the Active Layer
김희옥 International Conference on Advanced Electromaterials (ICAE) 2011, pp.1-1 |
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학술지
|
2011 |
Electrical Properties of Top-Gate Oxide Thin-Film Transistors with Double-Channel Layers
정우석 Journal of Crystal Growth, v.326 no.1, pp.186-190 |
9 |
원문
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학술지
|
2011 |
Enhanced Bias Illumination Stability of Oxide Thin Film Transistor through Insertion of Ultrathin Positive Charge Barrier into Active Material
오힘찬 Applied Physics Letters, v.99 no.2, pp.1-3 |
35 |
원문
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학술지
|
2011 |
Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor
윤성민 IEEE Transactions on Electron Devices, v.58 no.7, pp.2135-2142 |
20 |
원문
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학술지
|
2011 |
Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing
김민석 Electrochemical and Solid-State Letters, v.14 no.8, pp.H333-H336 |
33 |
원문
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학술지
|
2011 |
“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel
윤성민 Journal of the Korean Physical Society, v.58 no.5, pp.1494-1499 |
2 |
원문
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학술지
|
2011 |
Polymeric Ferroelectric & Oxide Semiconductor-Based Fully Transparent Memristor Cell
윤성민 Applied Physics A : Materials Science & Processing, v.102 no.4, pp.983-990 |
10 |
원문
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학술지
|
2011 |
Nonvolatile Memory Thin-Film Transistors Using an Organic Ferroelectric Gate Insulator and an Oxide Semiconducting Channel
윤성민 Semiconductor Science and Technology, v.26 no.3, pp.1-25 |
40 |
원문
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학술지
|
2011 |
In-Ga-Zn-Oxide Thin-Film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target
정우석 Journal of the Korean Physical Society, v.58 no.3, pp.608-611 |
3 |
원문
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학술지
|
2011 |
Water-Related Abnormal Instability of Transparent Oxide/Organic Hybrid Thin Film Transistors
양신혁 Applied Physics Letters, v.98 no.10, pp.1-3 |
30 |
원문
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학술지
|
2010 |
Nonvolatile Memory Transistors Using Solution-Processed Zinc-Tin Oxide and Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene)
윤성민 Organic Electronics, v.11 no.11, pp.1746-1752 |
18 |
원문
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학술지
|
2010 |
Device Reliability under Electrical Stress and Photo Response of Oxide TFTs
박상희 Journal of the Society for Information Display, v.18 no.10, pp.779-788 |
11 |
원문
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학술대회
|
2010 |
Flexible Nonvolatile Memory Thin-Film Transistors Using Oxide Semiconductor Active Channel and Organic Ferroelectric Gate Insulator
윤성민 Asian Meeting on Ferroelectricity (AMF) 2010 / Asian Meeting on Electroceramics (AMEC) 2010, pp.321-321 |
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학술지
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2010 |
Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer
윤성민 Journal of the Electrochemical Society, v.157 no.7, pp.H771-H778 |
3 |
원문
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학술지
|
2010 |
Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell
윤성민 IEEE Electron Device Letters, v.31 no.2, pp.138-140 |
12 |
원문
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학술지
|
2010 |
Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator
윤성민 Electrochemical and Solid-State Letters, v.13 no.5, pp.H141-H143 |
17 |
원문
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학술지
|
2009 |
Novel Tapered Macrogate Structure for Carbon Nanotube based Field Emission Display
정진우 Journal of Korean Vacuum Science & Technology, v.27 no.3, pp.1097-1100 |
13 |
원문
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학술지
|
2009 |
Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer
윤성민 Journal of Physics D : Applied Physics, v.42 no.24, pp.1-6 |
31 |
원문
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학술대회
|
2009 |
High Mobility In-Ga-Zn-Oxide Thin-Film Transistor with Sb2TeOx Gate Insulator Fabricated by Reactive Sputtering
정우석 International Conference on Solid State Devices and Materials (SSDM) 2009, pp.1-2 |
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학술지
|
2009 |
Optimization of Amorphous In-Ga-Zn-Oxide Semiconductor for the Top-Gate Transparent Thin-Film Transistor
정우석 Journal of the Korean Physical Society, v.54 no.5, pp.1879-1884 |
9 |
원문
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학술지
|
2009 |
High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators
정우석 Japanese Journal of Applied Physics, v.48 no.4, pp.1-15 |
16 |
원문
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학술지
|
2009 |
Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
신재헌 ETRI Journal, v.31 no.1, pp.62-64 |
185 |
원문
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학술지
|
2009 |
Passivation of Bottom-Gate IGZO Thin Film Transistors
조두희 Journal of the Korean Physical Society, v.54 no.1, pp.531-534 |
43 |
원문
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학술지
|
2009 |
Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors
정우석 Journal of the Korean Physical Society, v.54 no.1, pp.473-477 |
1 |
원문
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학술지
|
2008 |
Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator
Lars Herlogsson Advanced Materials, v.20 no.24, pp.4708-4713 |
136 |
원문
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학술대회
|
2008 |
Top Gate ZnO-TFT Driving AM-OLED Fabricated on a Plastic Substrate
황치선 International Meeting on Information Display (IMID) 2008, pp.1466-1469 |
0 |
|
학술대회
|
2008 |
High Mobility Transparent SnO2 and ZnO-SnO2 Thin-film Transistors with Double-layed Gate Insulators
정우석 International Conference on Solid State Devices and Materials (SSDM) 2008, pp.498-499 |
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학술대회
|
2008 |
Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM-OLED Display
박상희 Society for Information Display (SID) International Symposium 2008, pp.629-632 |
37 |
원문
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학술지
|
2007 |
Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition
박상희 Electrochemical and Solid-State Letters, v.11 no.1, pp.H10-H14 |
103 |
원문
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학술지
|
2007 |
Electric Characteristics of Organic Thin-film Transistors and Logic Circuits with a Ferroelectric Gate Insulator
양용석 Thin Solid Films, v.515 no.19, pp.7688-7691 |
2 |
원문
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학술대회
|
2006 |
Fabrication of Organic Thin-Film Transistors with Polymer Gate Insulators on Plastic Substrate
안성덕 International Meeting on Information Display 2006, pp.1170-1173 |
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학술지
|
2006 |
The Effect of Channel Length on Turn-on Voltage in Pentacene-Based Thin Film Transistor
구재본 Synthetic Metals, v.156 no.7-8, pp.533-536 |
25 |
원문
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