학술지
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2023 |
Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel
박종율 Electronics Letters, v.59 no.14, pp.1-3 |
0 |
원문
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학술지
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2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
장성재 Nanomaterials, v.13 no.5, pp.1-13 |
0 |
원문
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학술지
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2023 |
Analysis of issues in gate recess etching in the InAlAs/ InGaAs HEMT manufacturing process
민병규 ETRI Journal, v.45 no.1, pp.171-179 |
2 |
원문
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학술지
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2023 |
25-31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications
안현배 IEEE Microwave and Wireless Technology Letters, v.33 no.1, pp.47-50 |
2 |
원문
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학술지
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2022 |
Highly Efficient Hybrid Light-Emitting Transistors incorporating MoOx/Ag/MoOx Semi-Transparent Electrodes
박유정 Journal of Materials Chemistry C, v.10 no.3, pp.880-885 |
3 |
원문
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학술지
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2021 |
Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
문석호 ACS Applied Materials & Interfaces, v.13 no.49, pp.58253-59592 |
8 |
원문
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학술지
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2021 |
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
장성재 Crystals, v.11 no.11, pp.1-10 |
4 |
원문
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학술지
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2020 |
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
장성재 Nanomaterials, v.10 no.11, pp.1-11 |
8 |
원문
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학술지
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
강수철 Nanomaterials, v.10 no.11, pp.1-9 |
5 |
원문
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학술지
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2020 |
W-Band MMIC Chipset in 0.1-μm mHEMT Technology
이종민 ETRI Journal, v.42 no.4, pp.549-561 |
5 |
원문
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학술지
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2019 |
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
황인태 Applied Sciences, v.9 no.17, pp.1-13 |
5 |
원문
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학술지
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2019 |
DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure
곽현탁 Journal of Nanoscience and Nanotechnology, v.19 no.4, pp.2319-2322 |
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원문
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학술지
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2019 |
2단계 게이트 리세스 방법으로 제작한 100 nm mHEMT 소자의 DC 및 RF 특성
윤형섭 한국전자파학회논문지, v.30 no.4, pp.282-285 |
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원문
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학술지
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2019 |
Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier
김정길 Solid-State Electronics, v.152, pp.24-28 |
9 |
원문
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학술대회
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2018 |
2단계 게이트 리세스 방법으로 제작한 100nm mHEMT소자의 DC/RF 특성
윤형섭 한국전자파학회 학술 대회 (추계) 2018, pp.106-106 |
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학술지
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2018 |
High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
이준혁 IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186 |
30 |
원문
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학술지
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2018 |
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure
곽현탁 Applied Sciences, v.8 no.6, pp.1-14 |
22 |
원문
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학술지
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2018 |
Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation
장성재 ECS Journal of Solid State Science and Technology, v.7 no.6, pp.86-90 |
7 |
원문
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학술지
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2017 |
A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology
신동환 Journal of Electromagnetic Engineering and Science, v.17 no.4, pp.178-180 |
5 |
원문
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학술지
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
윤형섭 Journal of the Korean Physical Society, v.71 no.6, pp.360-364 |
2 |
원문
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학술지
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2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
이종민 Journal of the Korean Physical Society, v.71 no.6, pp.365-369 |
5 |
원문
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학술지
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2017 |
Growth of 10 nm-Thick AlIn(Ga)N/GaN Heterostructure with High Electron Mobility and Low Sheet Resistance
김정길 Physica Status Solidi (B), v.254 no.8, pp.1-5 |
1 |
원문
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학술지
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2017 |
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
도재원 Thin Solid Films, v.628, pp.31-35 |
8 |
원문
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학술지
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2017 |
High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors
이종민 Current Applied Physics, v.17 no.2, pp.157-161 |
12 |
원문
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학술지
|
2016 |
A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications
노윤섭 IEEE Microwave and Wireless Components Letters, v.26 no.8, pp.619-621 |
41 |
원문
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학술대회
|
2016 |
Characterization of 0.18 μm Gate-Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
윤형섭 International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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학술대회
|
2016 |
Characteristics of Enhanced-mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
이종민 International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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학술지
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2015 |
High-Performance Amorphous Multilayered ZnO-SnO2 Heterostructure Thin-Film Transistors: Fabrication and Characteristics
이수재 ETRI Journal, v.37 no.6, pp.1135-1142 |
25 |
원문
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학술지
|
2015 |
Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system
문재경 Solid-State Electronics, v.114, pp.121-130 |
2 |
원문
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학술지
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2015 |
Ka 대역 위성 통신 하향 링크를 위한 GaN 전력 증폭기 집적 회로
지홍구 한국산학기술학회논문지, v.16 no.12, pp.8643-8648 |
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원문
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학술지
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2015 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
조규준 Journal of the Korean Physical Society, v.67 no.4, pp.682-686 |
3 |
원문
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학술지
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2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
윤형섭 Journal of the Korean Physical Society, v.67 no.4, pp.654-657 |
4 |
원문
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학술대회
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2015 |
Ka-band GaN Power Amplifier MMIC Chipset for Satellite and 5G Cellular Communications
노윤섭 Asia-Pacific Conference on Antennas and Propagation (APCAP) 2015, pp.482-485 |
19 |
원문
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학술지
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2015 |
Highly Integrated C-Band GaN High Power Amplifier MMIC for Phased Array Applications
노윤섭 IEEE Microwave and Wireless Components Letters, v.25 no.6, pp.406-408 |
21 |
원문
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학술대회
|
2015 |
GaN High Power Devices and Their Applications
문재경 The Electrochemical Society (ECS) Meeting 2015 (ECS Transactions 66), v.66 no.1, pp.79-83 |
0 |
원문
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학술지
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2015 |
X-Band 100 W Solid-State Power Amplifier Using a 0.25 μM GaN HEMT Technology
강동민 Microwave and Optical Technology Letters, v.57 no.1, pp.212-216 |
6 |
원문
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학술지
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2014 |
High Output Power and High Fundamental Leakage Suppression Frequency Doubler MMIC for E-Band Transceiver
장동필 Journal of Electromagnetic Engineering and Science, v.14 no.4, pp.342-345 |
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원문
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학술대회
|
2014 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
조규준 International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.131-131 |
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학술지
|
2014 |
Characterization of Amorphous Multilayered ZnO-SnO2 Heterostructure Thin Films and their Field Effect Electronic Properties
이수재 Applied Physics Letters, v.105 no.20, pp.1-4 |
12 |
원문
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학술대회
|
2014 |
Compact 10 ~ 13 GHz GaN Low Noise Amplifier MMIC using Simple Matching and Bias Circuits
장우진 European Microwave Integrated Circuits Conference (EuMIC) 2014, pp.516-519 |
10 |
원문
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학술지
|
2014 |
Ku-Band GaN HPA MMIC with High-Power and High-PAE Performances
노윤섭 Electronics Letters, v.50 no.19, pp.1361-1363 |
7 |
원문
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학술지
|
2014 |
X-Band MMIC Low-Noise Amplifier MMIC on SiC Substrate Using 0.25-μm ALGaN/GaN HEMT Technology
장우진 Microwave and Optical Technology Letters, v.56 no.1, pp.96-99 |
8 |
원문
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학술지
|
2013 |
Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment
임종원 Thin Solid Films, v.547, pp.106-110 |
9 |
원문
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학술대회
|
2013 |
X-Band Low Noise Amplifier MMIC Using AlGaN/GaN HEMT Technology on SiC Substrate
장우진 Asia-Pacific Microwave Conference (APMC) 2013, pp.681-684 |
6 |
원문
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학술지
|
2012 |
K-Band Watt-Level mHEMT Power Amplifier using Quadruple-Stacked Transistors
박영락 Microwave and Optical Technology Letters, v.54 no.11, pp.2624-2626 |
0 |
원문
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학술지
|
2012 |
Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors
이종민 Microwave and Optical Technology Letters, v.54 no.9, pp.2103-2106 |
1 |
원문
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학술지
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2012 |
80-110 GHz MMIC Amplifiers Using a 0.1-μm GaAs-Based mHEMT Technology
강동민 Microwave and Optical Technology Letters, v.54 no.8, pp.1978-1982 |
1 |
원문
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학술지
|
2012 |
E-Band Wideband MMIC Receiver Using 0.1 um GaAs pHEMT Process
김봉수 ETRI Journal, v.34 no.4, pp.485-491 |
7 |
원문
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학술지
|
2011 |
Charge Injection Engineering of Ambipolar Field-Effect Transistors for High-Performance Organic Complementary Circuits
백강준 ACS Applied Materials & Interfaces, v.3 no.8, pp.3205-3214 |
149 |
원문
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학술지
|
2010 |
밀리미터파 대역 단일 집적 증폭기
지홍구 한국산학기술학회논문지, v.11 no.10, pp.3917-3922 |
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원문
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학술지
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2008 |
A Transceiver Module for Automotive Radar Sensors using W-band MMIC One-chip Set
강동민 Microwave and Optical Technology Letters, v.50 no.9, pp.2371-2376 |
0 |
원문
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학술지
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2008 |
LiNbO3LiNbO3 강유전체를 이용한 MFISFET의 제작 및 특성
정순원 전기학회논문지 P, v.57 no.2, pp.135-139 |
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학술대회
|
2007 |
Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel
윤형섭 International Conference on Indium Phosphide and Related Materials (IPRM) 2007, pp.110-113 |
0 |
원문
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학술대회
|
2006 |
Preamplifier Design for Fiber-Optic mm-Wave Wireless System
홍선의 European Microwave Conference (EuMC) 2006, pp.1545-1547 |
1 |
원문
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학술지
|
2006 |
Extremely Low Noise Characteristics of 0.15μm Power Metamorphic High-Electron-Mobility Transistors
심재엽 Japanese Journal of Applied Physics, v.45 no.4B, pp.3380-3383 |
2 |
원문
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학술지
|
2005 |
DC and RF Characteristics of 0.15 μm Power Metamorphic HEMTs
심재엽 ETRI Journal, v.27 no.6, pp.685-690 |
5 |
원문
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학술대회
|
2005 |
Preamplifier Design with Narrow Band for Fiber-Optic Millimeter-Wave Wireless LAN
홍선의 Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4 |
0 |
원문
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학술지
|
2005 |
A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs
임종원 ETRI Journal, v.27 no.3, pp.304-311 |
8 |
원문
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학술지
|
2005 |
A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems
강동민 ETRI Journal, v.27 no.2, pp.133-139 |
11 |
원문
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학술지
|
2004 |
The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs
윤두협 IEEE Transactions on Electron Devices, v.51 no.5, pp.785-789 |
15 |
원문
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학술지
|
2003 |
Electrical Characteristics of Metal-Insulator-Semiconductor Schottky Diodes using a Photowashing Treatment in AlxGa1-xAs/InGaAs (X=0.75) Pseudomorphic High Electron Mobility Transistors
Sang Youn Han Journal of Vacuum Science and Technology B, v.21 no.5, pp.2133-2137 |
8 |
|
학술지
|
2003 |
Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic Contacts to AlxGa1-xAs/InGaAs (x = 0.75) Pseudomorphic High Electron Mobility Transistor
Kyoung Jin Choi Journal of the Korean Physical Society, v.43 no.2, pp.253-258 |
8 |
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학술지
|
2003 |
High Power 0.25 μm Gate GaN HEMTs on Sapphire with Power Density 4.2 W/mm at 10 GHz
윤두협 Electronics Letters, v.39 no.6, pp.566-567 |
15 |
원문
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학술지
|
2002 |
Characterization of ultrafast devices using near-field optical heterodyning
M. E. Ali IEEE Microwave and Wireless Components Letters, v.12 no.10, pp.369-371 |
5 |
원문
|