Subjects : subthreshold swing (SS)

Articles (58)
Patents (1)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2024	Rapid activation of a solution-processed aluminum oxide gate dielectric through intense pulsed light irradiation 오연화 RSC Advances, v.14, no.50, pp.37438-37444	1
Conference	2024	Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs Jung Hyunwook International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444	0
Journal	2024	Benzylphosphonic acid treated ultra-thin ALD-InOx for long term device stability Juhun Lee Journal of Materials Chemistry C, v.12, no.31, pp.11928-11937	1
Journal	2024	Characteristics of Ultrathin Indium Oxide Thin‐Film Transistors with Diverse Channel Lengths Fabricated by Atomic Layer Deposition Juhun Lee Physica Status Solidi (B): Basic Research, v.261, no.7, pp.1-6	2
Journal	2024	β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV Kyu Jun Cho Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5	2
Journal	2024	Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography Sung Chihun IEEE Electron Device Letters, v.45, no.6, pp.1020-1023	1
Conference	2023	Oxide Semiconductor Thin-Film Transistors with Deep Submicron Channel Fabricated with Hyperlithography Sung Chihun Society for Information Display (SID) International Symposium 2023, pp.692-694	0
Journal	2021	Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors Chihun Sung IEEE Electron Device Letters, v.42, no.9, pp.1327-1330	7
Journal	2021	Optimizing Oxide Mixing Ratio for Achieving Energy‐Efficient Oxide Thin‐Film Transistors Jaehyun Moon Physica Status Solidi (A) - Applications and Materials Science, v.218, no.16, pp.1-5	1
Journal	2018	원자층 증착법을 이용한 고이동도 초박막 결정질 인듐 옥사이드 박막 트랜지스터 Lee Jongchan Applied Physics Letters, v.113, no.11, pp.1-5	58
Conference	2018	Transparent Triple-layer Oxide TFT for Enhanced Photo Switching Characteristics Lee Jongchan International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2018, pp.1-3	2
Journal	2018	Low-Temperature Solution-Processed Zinc Oxide Field Effect Transistor by Blending Zinc Hydroxide and Zinc Oxide Nanoparticle in Aqueous Solutions 신현우 Japanese Journal of Applied Physics, v.57, no.5S, pp.1-5	5
Journal	2018	Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm2/V·s for High-Speed Operation Yang Jong-Heon IEEE Electron Device Letters, v.39, no.4, pp.508-511	39
Journal	2017	Pre-Annealing Effect for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors Kang Chan-Mo Journal of Nanoscience and Nanotechnology, v.17, no.5, pp.3293-3297	3
Journal	2017	Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs Sungjae Chang IEEE Electron Device Letters, v.38, no.4, pp.441-444	14
Journal	2017	Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment 강민식 Nanoscale, v.9, no.4, pp.1645-1652	44
Journal	2015	High-Performance Amorphous Multilayered ZnO-SnO2 Heterostructure Thin-Film Transistors: Fabrication and Characteristics Su Jae Lee ETRI Journal, v.37, no.6, pp.1135-1142	28
Journal	2015	Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning Cho Sung Haeng IEEE Transactions on Electron Devices, v.62, no.11, pp.3653-3657	37
Journal	2015	Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7526-7530	9
Journal	2015	Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate Soon-Won Jung Journal of Vacuum Science and Technology B, v.33, no.5, pp.1-4	18
Journal	2015	Thickness Modulation Effects of Al2O3 Capping Layers on Device Performance for the Top-Gate Thin-Film Transistors Using Solution-Processed Poly(4-Vinyl Phenol)/Zn-Sn-O Gate Stacks 김경아 Journal of Vacuum Science and Technology B, v.33, no.3, pp.1-7	1
Journal	2015	Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer Soon-Won Jung Organic Electronics, v.16, pp.46-53	50
Journal	2014	Characterization of Amorphous Multilayered ZnO-SnO2 Heterostructure Thin Films and their Field Effect Electronic Properties Su Jae Lee Applied Physics Letters, v.105, no.20, pp.1-4	14
Journal	2014	Characterization of ZnO–SnO2 nanocomposite thin films deposited by pulsed laser ablation and their field effect electronic properties Su Jae Lee Materials Letters, v.122, pp.94-97	20
Conference	2013	High Mobility Oxide TFT for Large Area High Resolution AMOLED Park Sang-Hee Society for Information Display (SID) International Symposium 2013, pp.18-21	10
Journal	2013	Double-Layered Passivation Film Structure of Al2O3/SiNx for High Mobility Oxide Thin Film Transistors Park Sang-Hee Journal of Vacuum Science and Technology B, v.31, no.2, pp.1-6	30
Conference	2012	Electronic Characteristics of ZnO Thin Film Transistors by Low-temperature Process Lim Sang Chul International Meeting on Information Display (IMID) 2012, pp.1-2
Journal	2012	Effect of In-Ga-Zn-O Active Layer Channel Composition on Process Temperature for Flexible Oxide Thin-film Transistors 박준용 Journal of Vacuum Science and Technology B, v.30, no.4, pp.1-5	20
Journal	2011	Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs Jun Myungsim Semiconductor Science and Technology, v.26, no.12, pp.1-4	0
Journal	2011	Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor Yoon Sung Min IEEE Transactions on Electron Devices, v.58, no.7, pp.2135-2142	21
Journal	2011	“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel Yoon Sung Min Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499	2
Journal	2011	High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4	1
Journal	2010	Fabrication of Self-Aligned TFTs with a Ultra-Low Temperature Polycrystalline Silicon Process on Metal Foils Jaehyun Moon Solid-State Electronics, v.54, no.11, pp.1326-1331	2
Journal	2010	Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene) Yoon Sung Min Organic Electronics, v.11, no.11, pp.1746-1752	18
Journal	2010	Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor Jang Moon Gyu Journal of Vacuum Science and Technology B, v.28, no.4, pp.799-801	6
Journal	2010	Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer Yoon Sung Min Journal of the Electrochemical Society, v.157, no.7, pp.H771-H778	3
Journal	2010	Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926	108
Journal	2010	Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator Yoon Sung Min Electrochemical and Solid-State Letters, v.13, no.5, pp.H141-H143	17
Journal	2009	Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors Cheong Woo-Seok ETRI Journal, v.31, no.6, pp.660-666	26
Journal	2009	Al-Zn-Sn-O thin Film Transistors with Top and Bottom Gate Structure for AMOLED Cho Doo-Hee IEICE Transactions on Electronics, v.E92-C, no.11, pp.1340-1346	8
Conference	2009	21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane Cho Doo-Hee Society for Information Display (SID) International Symposium 2009, pp.280-283	29
Journal	2009	Transparent Oxide Thin-Film Transistors Composed of Al and Sn-Doped Zinc Indium Oxide Cho Doo-Hee IEEE Electron Device Letters, v.30, no.1, pp.48-50	18
Conference	2009	P‐8: Effects of Active Thickness in Oxide Semiconductor TFTs Hwang Chi-Sun Society for Information Display (SID) International Symposium 2009, pp.1107-1109	10
Journal	2008	Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions 신진욱 IEEE Electron Device Letters, v.29, no.12, pp.1336-1339	4
Conference	2008	Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED Cho Doo-Hee International Display Workshops (IDW) 2008, pp.1625-1628	0
Conference	2008	Novel Oxide Thin Film Transistors for Transparent AMOLED Cho Doo-Hee International Meeting on Information Display (IMID) 2008, pp.1101-1104	1
Conference	2008	Top Gate ZnO-TFT Driving AM-OLED Fabricated on a Plastic Substrate Hwang Chi-Sun International Meeting on Information Display (IMID) 2008, pp.1466-1469	0
Journal	2008	Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature Cho Doo-Hee Applied Physics Letters, v.93, no.14, pp.1-3	152
Journal	2008	Transparent Thin-film Transistors with Zinc Oxide Semiconductor Fabricated by Reactive Sputtering using Metallic Zinc target Cheong Woo-Seok Thin Solid Films, v.516, no.22, pp.8159-5164	12
Conference	2008	High Performance Schottky Barrier MOSFETs with Workfunction Engineering Jang Moon Gyu Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2	1
Conference	2008	P‐20: Post‐Annealing and Passivations of Transparent Bottom Gate IGZO Thin Film Transistors Cho Doo-Hee Society for Information Display (SID) International Symposium 2008, pp.1243-1246	6
Journal	2008	Three-Dimensionally Stacked Poly-Si TFT CMOS Inverter with High Quality Laser Crystallized Channel on Si Substrate Oh Soon-Young Solid-State Electronics, v.52, no.3, pp.372-376	7
Journal	2007	Selective oxidation fin channel MOSFETs with low source/drain series resistance Cho Young Kyun Electronics Letters, v.43, no.13, pp.734-735	0
Journal	2007	Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition Sun Jin Yun Electrochemical and Solid-State Letters, v.10, no.3, pp.H90-H93	11
Journal	2007	Pentacene Thin-film Transistors and Inverters with Plasma-enhanced Atomic-layer-deposited Al2O3 Gate Dielectric Koo Jae Bon Thin Solid Films, v.515, no.5, pp.3132-3137	26
Journal	2006	N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS Jang Moon Gyu IEEE Transactions on Electron Devices, v.53, no.8, pp.1821-1825	28
Conference	2006	Self-Aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate Jaehyun Moon Materials Research Society (MRS) Meeting 2006 (Spring), pp.1-6
Journal	2005	Strained-SiGe Complementary MOSFETs Adopting Different Thickness of Silicon Cap Layers for Low Power and High Performance Applications Bongki Mheen ETRI Journal, v.27, no.4, pp.439-445	8

특허 검색결과
Status	Year	Patent Name	Country	Family Pat.	KIPRIS
Registered	2007	비대칭 디설파이드 정착기를 가지는 분자 전자소자용 화합물 및 그 제조 방	KOREA

연구보고서 검색결과
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