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Journal
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2025 |
Mechanically Adaptable High‐Performance p(SBMA‐MMA) Copolymer Hydrogel with Iron (II/III) Perchlorate for Wearable Thermocell Applications
신길용 Advanced Functional Materials, v.35, no.12, pp.1-12 |
2 |
원문
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Conference
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2024 |
Monolithic-ALD-Oxide-Semiconductor-Channel CMOS Inverter Applications with n-Type IGZO Vertical TFT and p-Type SnO Planar TFT
Seong-Mok Cho International Meeting on Information Display (IMID) 2024, pp.269-269 |
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Conference
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2024 |
Monolithic-ALD-Oxide-Semiconductor-Channel CMOS Inverter Applications with n-Type IGZO Vertical TFT and p-Type SnO Planar TFT
Jeho Na International Meeting on Information Display (IMID) 2024, pp.269-269 |
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Conference
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2024 |
p-type SexTe1-x thin-film transistors for complementary logic gates
Choi Kyunghee International Meeting on Information Display (IMID) 2024, pp.1-1 |
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Journal
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2024 |
Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p−n Semiconductor Heterojunction Structure
Jung Hoon Han ACS Applied Materials & Interfaces, v.16, no.24, pp.31254-31260 |
0 |
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Journal
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2024 |
Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer
Choi Kyunghee ACS Applied Materials & Interfaces, v.16, no.18, pp.23459-23466 |
2 |
원문
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Conference
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2024 |
High breakdown voltage, low specific on-resistance GaN on GaN PiN diodes with low contact resistance on p-type GaN for high power applications
Kim Donghan Materials Research Society (MRS) Meeting 2024 (Spring), pp.1-2 |
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Conference
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2024 |
High-Performance p-type Thin Film Transistor Using Room Temperature Deposited Se-Te Alloying Channel Layer
Choi Kyunghee International Thin-Film Transistor Conference (ITC) 2024, pp.1-1 |
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Journal
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2024 |
Optimal hole extraction performance in MoOx-incorporated PEDOT:PSS films for organic photovoltaics
Hwang Tae-Ha Journal of the Korean Physical Society, v.84, no.5, pp.351-355 |
0 |
원문
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Journal
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2024 |
Optimal hole extraction performance in MoOx-incorporated PEDOT:PSS films for organic photovoltaics
곽동훈 Journal of the Korean Physical Society, v.84, no.5, pp.351-355 |
0 |
원문
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Conference
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2022 |
Fabrication and characterization of p-type thin-film transistors using SeTe active layer deposited by pulsed laser ablation
Choi Kyunghee The Electrochemical Society (ECS) Meeting 2022, pp.1-2 |
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Journal
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2022 |
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform
Seong Hyun Lee IEEE Transactions on Electron Devices, v.69, no.10, pp.5443-5449 |
6 |
원문
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Journal
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2021 |
The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors
Sooji Nam Physica Status Solidi (A) - Applications and Materials Science, v.218, no.18, pp.1-7 |
2 |
원문
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Journal
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2021 |
Cu/graphene Hybrid Transparent Conducting Electrodes for Organic Photovoltaic Devices
강주환 Carbon, v.171, pp.341-349 |
34 |
원문
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Journal
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2021 |
Cu/graphene Hybrid Transparent Conducting Electrodes for Organic Photovoltaic Devices
Sukyung Choi Carbon, v.171, pp.341-349 |
34 |
원문
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Journal
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2020 |
Multi-wafer-scale Growth of WSe2 Films using a Traveling Flow-type Reactor with a Remote Thermal Se Cracker
Hang Kang Applied Surface Science, v.528, pp.1-8 |
3 |
원문
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Journal
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2020 |
Multi-wafer-scale Growth of WSe2 Films using a Traveling Flow-type Reactor with a Remote Thermal Se Cracker
Sun Jin Yun Applied Surface Science, v.528, pp.1-8 |
3 |
원문
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Journal
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2020 |
Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing
권혁진 Nanomaterials, v.10, no.7, pp.1-13 |
7 |
원문
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Journal
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2020 |
Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing
Heqing Ye Nanomaterials, v.10, no.7, pp.1-13 |
7 |
원문
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Journal
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2019 |
Fabrication of 5,000V, 4-Inch Light Triggered Thyristor using Boron Diffusion Process and its Characterization
Park Kun Sik 전력전자학회논문지, v.24, no.6, pp.411-418 |
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Journal
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2019 |
A Highly Susceptive Mesoporous Hematite Microcube Architecture for Sustainable P-type Formaldehyde Gas Sensors
Park Hyung Ju Sensors and Actuators B : Chemical, v.287, pp.437-444 |
39 |
원문
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Conference
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2019 |
용액 공정으로 제조한 칼륨이 포함된 주석 산화물 p형 산화물 반도체
Cho Sung Haeng European Materials Research Society (E-MRS) Meeting 2019 (Spring), pp.1-28 |
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Conference
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2019 |
다공성 헤마타이트 마이크로큐브의 손쉬운 합성법과 그것을 이용한 지속가능한 P형 포름알데하이드 가스 센서
Park Hyung Ju 한국 MEMS 학술 대회 2019, pp.1-1 |
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Journal
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2018 |
Heterojunction Internal Photoemission of λ ∼ 2.8 μm by Ge/Si Core/Shell Nanowires
Suh Dongwoo IEEE Transactions on Electron Devices, v.65, no.12, pp.5406-5411 |
0 |
원문
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Conference
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2018 |
New p-Type Oxide Semiconductor with High Hole Mobility over 7 cm2/Vs Formed By Solution Process
Cho Sung Haeng The Electrochemical Society (ECS) Meeting 2018, pp.1-1 |
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Conference
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2018 |
Effects of Doping on the Structural, Optical, and Electrical Properties of Solution Processed P-type Tin Oxide Films for High Performance Thin-film Transistors
Sooji Nam SPIE Optics and Photonics 2018, pp.1-1 |
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Journal
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2018 |
Computational Discovery of P-type Transparent Oxide Semiconductors using Hydrogen Descriptor
윤용 npj Computational Materials, v.4, pp.1-7 |
70 |
원문
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Journal
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2018 |
Computational Discovery of P-type Transparent Oxide Semiconductors using Hydrogen Descriptor
임강훈 npj Computational Materials, v.4, pp.1-7 |
70 |
원문
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Journal
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2018 |
Flexible P-type PEDOT:PSS/a-Si:H Hybrid Thin Film Solar Cells with Boron-doped Interlayer
Lee Yoo Jeong Solar Energy, v.163, pp.398-404 |
20 |
원문
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Journal
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2017 |
Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters
이한솔 ACS Applied Materials & Interfaces, v.9, no.18, pp.15592-15598 |
31 |
원문
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Journal
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2016 |
Thermoelectric Cooler Module with Enhanced Cooling Ability Using a Hybrid Cu Paste and a Si Substrate
Bae Hyun-Cheol Journal of Nanoscience and Nanotechnology, v.16, no.12, pp.12732-12736 |
2 |
원문
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Conference
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2016 |
p-type Co-rich ZnCo2O4 Hollow Nanosphere: High Performance Formaldehyde Detection at ppb Levels
Park Hyung Ju International Meeting on Chemical Sensors (IMCS) 2016, pp.1-2 |
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Conference
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2016 |
The Effect of n-type Window Layer on the Performance of Amorphous Si:H Thin Film Solar Cells
Jung Kwang Hoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Journal
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2016 |
Doping-Concentration-Dependent Electric and Thermoelectric Properties of 2-Dimensional Silicon Thin Films
Kim Junsoo Journal of the Korean Physical Society, v.68, no.12, pp.1472-1475 |
1 |
원문
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Journal
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2016 |
Multi-Layered Hydrogenated P-Type Microcrystalline Silicon Windows for a-Si:H Thin Film Solar Cells on Opaque Substrates
Lee Yoo Jeong International Journal of Hydrogen Energy, v.41, no.15, pp.6240-6246 |
4 |
원문
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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Journal
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2013 |
Depinning of the Fermi Level at the Ge Schottky Interface through Se Treatment
V. Janardhanam Scripta Materialia, v.69, no.11-12, pp.809-811 |
11 |
원문
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Journal
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2013 |
Seebeck Coefficient Characterization of Highly Doped n- and p-Type Silicon Nanowires for Thermoelectric Device Applications Fabricated with Top-Down Approach
Kim Jae Hyeon Journal of Nanoscience and Nanotechnology, v.13, no.9, pp.6416-6419 |
12 |
원문
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Journal
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2013 |
Printed Organic One-Time Programmable ROM Array Using Anti-fuse Capacitor
양병도 ETRI Journal, v.35, no.4, pp.594-602 |
8 |
원문
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Conference
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2013 |
P.120: P‐doped Di‐[4‐(N,N‐ditolyl‐amino)‐phenyl]cyclohexane for Improving Power Efficiency of Organic Light‐Emitting Diodes
권용원 Society for Information Display (SID) International Symposium 2013, v.44, no.1, pp.1434-1437 |
0 |
원문
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Journal
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2013 |
Low-Voltage, High Speed Inkjet-Printed Flexible Complementary Polymer Electronic Circuits
백강준 Organic Electronics, v.14, no.5, pp.1407-1418 |
64 |
원문
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Journal
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2013 |
Effects of Two-Step Mg Doping in p-GaN on Efficiency Characteristics of InGaN Blue Light-Emitting Diodes without AlGaN Electron-Blocking Layers
류한열 Applied Physics Letters, v.102, no.18, pp.1-4 |
25 |
원문
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Journal
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2012 |
Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits
Kang-Jun Baeg ACS Applied Materials & Interfaces, v.4, no.11, pp.6176-6184 |
82 |
원문
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Journal
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2012 |
Characteristics of NiO–AZO thin films deposited by magnetron co-sputtering in an O2 atmosphere
H.W. Park Materials Letters, v.74, pp.30-32 |
13 |
원문
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Journal
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2012 |
Evaluation of Seebeck coefficients in n- and p-type silicon nanowires fabricated by complementary metal–oxide–semiconductor technology
Hyun Younghoon Nanotechnology, v.23, no.40, pp.1-7 |
13 |
원문
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Journal
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2012 |
Biotin-Functionalized Semiconducting Polymer in an Organic Field Effect Transistor and Application as a Biosensor
Kim Zin Sig Sensors, v.12, no.8, pp.11238-11248 |
15 |
원문
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Journal
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2012 |
High‐Performance Top‐Gated Organic Field‐Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory
Kang-Jun Baeg Advanced Functional Materials, v.22, no.14, pp.2915-2926 |
204 |
원문
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Journal
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2012 |
Characteristic Variations of Graphene Field-Effect Transistors Induced by CF4 Gas
Park Jae Hoon Japanese Journal of Applied Physics, v.51, no.8, pp.1-4 |
2 |
원문
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Journal
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2011 |
Polymer Dielectrics and Orthogonal Solvent Effects for High-Performance Inkjet-Printed Top-Gated P-Channel Polymer Field-Effect Transistors
Kang-Jun Baeg ETRI Journal, v.33, no.6, pp.887-896 |
30 |
원문
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Journal
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2011 |
Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs
Jun Myungsim Semiconductor Science and Technology, v.26, no.12, pp.1-4 |
0 |
원문
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Journal
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2011 |
Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation
Jun Myungsim Journal of Nanoscience and Nanotechnology, v.11, no.8, pp.7339-7342 |
0 |
원문
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Journal
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2011 |
Analysis of Configuration of Surface-Immobilized Proteins by Si Nanochannel Field Effect Transistor Biosensor
Park Chan Woo Sensors and Actuators B : Chemical, v.154, no.2, pp.164-168 |
6 |
원문
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Journal
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2011 |
High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm
Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4 |
1 |
원문
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Journal
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2011 |
Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes
Tae-Youb Kim Japanese Journal of Applied Physics, v.50, no.4 PART 2, pp.1-3 |
4 |
원문
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Journal
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2011 |
Structural and Optical Properties of Cu Doped ZnO Thin Films by Co-Sputtering
Chung Sung Mook Journal of Nanoscience and Nanotechnology, v.11, no.1, pp.782-786 |
10 |
원문
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Journal
|
2011 |
High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductors
Kang-Jun Baeg Journal of Polymer Science Part B : Polymer Physics, v.49, no.1, pp.62-67 |
103 |
원문
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Journal
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2010 |
Voltage-induced Current-Jump Assisted by Infrared or Temperature in p-Type GaAs
Choi Sungyoul Journal of the Korean Physical Society, v.57, no.61, pp.1769-1772 |
0 |
원문
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Journal
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2010 |
Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor
Jang Moon Gyu Journal of Vacuum Science and Technology B, v.28, no.4, pp.799-801 |
6 |
원문
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Journal
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2010 |
Temperature Dependency and Carrier Transport Mechanisms of Ti/p-Type InP Schottky Rectifiers
V. Janardhanam Journal of Alloys and Compounds, v.504, no.1, pp.146-150 |
87 |
원문
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Conference
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2009 |
Photo-Induced Abrupt Current-Jump in P-Type GaAs thin Films
Choi Sungyoul International Conference on Advanced Materials and Devices (ICAMD) 2009, pp.1-13 |
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Journal
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2009 |
Control of Current-Jump Induced by Voltage, Temperature, Light in P-Type GaAs: Programmable Critical Temperature Sensor
Choi Sungyoul Applied Physics Letters, v.95, no.23, pp.1-4 |
4 |
원문
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Conference
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2009 |
Voltage-Induced Current-Jump Assisted by Infrared or Temperature in P-Type GaAs
Choi Sungyoul International Conference on Advanced Materials and Devices (ICAMD) 2009, pp.1-3 |
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Journal
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2009 |
Chalcogen-based thin film transistor using CuInSe2 photo-active layer
김경암 Current Applied Physics, v.9, no.6, pp.1326-1329 |
5 |
원문
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Journal
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2009 |
Control of channel doping concentration for enhancing the sensitivity of ‘top-down’ fabricated Si nanochannel FET biosensors
Park Chan Woo Nanotechnology, v.20, no.47, pp.1-6 |
14 |
원문
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Journal
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2009 |
Electrical, Structural and Optical Characterization of Copper Oxide thin Films as a Function of Post Annealing Temperature
V. Figueiredo Physica Status Solidi (A), v.206, no.9, pp.2143-2148 |
71 |
원문
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Journal
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2009 |
Growth and Properties of Sb-doped ZnMgO Thin Films Deposited Usingrf Magnetron Sputtering
Chung Sung Mook Journal of the Korean Physical Society, v.55, no.3, pp.1123-1127 |
2 |
원문
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Conference
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2009 |
Analysis of Configuration of Surface-Immobilized Proteins by Si Nanochannel Field Effect Transistor Biosensor
Park Chan Woo Eurosensors 2009, pp.674-677 |
3 |
원문
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Conference
|
2009 |
Abrupt Current Jump of Epitaxial P-Type GaAs thin Film
Choi Sungyoul International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18) / International Conference on Modulated Semiconductor structures (MSS-14), pp.1-10 |
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Journal
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2009 |
Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique
문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624 |
6 |
원문
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Conference
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2009 |
Immunodetection of Cancer Marker in Human Serum using Silicon Field Effect Transistors
Kim Ansoon Nanotech conference and Expo 2009, pp.1-2 |
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Journal
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2009 |
Effect of Silicidation on Silicon-Based Thin Film Resistors in SiGe Integrated Circuits
Lee Sang-Heung Journal of Materials Science : Materials in Electronics, v.20, no.4, pp.354-359 |
0 |
원문
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Journal
|
2009 |
Fabrication of P-Type ZnO Thin Films Using Rf-Magnetron Sputter Deposition
Jun Kwan Kim Electrochemical and Solid-State Letters, v.12, no.4, pp.H109-H112 |
15 |
원문
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Journal
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2008 |
20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors
Jang Moon Gyu Applied Physics Letters, v.93, no.19, pp.1-3 |
11 |
원문
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Journal
|
2008 |
Current Flow Mechanisms of Platinum-Silicided p-Type Schottky Barrier MOSFETs
Jang Moon Gyu Journal of the Korean Physical Society, v.53, no.4, pp.2175-2178 |
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Journal
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2008 |
Chalcogenide Thin-Film Transistors using Oxygenated n-type and p-type Phase Change Materials
Song Kibong Applied Physics Letters, v.93, no.4, pp.1-3 |
25 |
원문
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Conference
|
2008 |
High Performance Schottky Barrier MOSFETs with Workfunction Engineering
Jang Moon Gyu Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2 |
1 |
원문
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Journal
|
2008 |
ZnO Nanotips and Nanorods on Carbon Nanotube/Si Substrates: Anomalous P-type Like Optical Properties of Undoped ZnO Nanotips
박승식 Nanotechnology, v.19, no.24, pp.1-5 |
16 |
원문
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Journal
|
2008 |
Schottky Barrier Heights of n/p-type Erbium-silicided Schottky Diodes
Jun Myung Sim Microelectronic Engineering, v.85, no.5-6, pp.1395-1398 |
5 |
원문
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Journal
|
2007 |
Silicon-based Thin Films as Bottom Electrodes in Chalcogenide Nonvolatile Memories
Lee Seung-Yun Applied Surface Science, v.254, no.1, pp.312-315 |
3 |
원문
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Journal
|
2007 |
Temperature Dependence of Metal-Insulator Transition in Mn-Doped p-Type GaAs
Sungyoul Choi Journal of the Korean Physical Society, v.50, no.3, pp.844-847 |
4 |
원문
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Conference
|
2006 |
The Diode Consisted of N-Type and P-Type CdS thin film Prepared by CBD Process
Cho Doo-Hee 광자기술 학술 회의 (PC) 2006, pp.1-2 |
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Journal
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2006 |
Isolation Effect on Organic Thin Film Transistors for Low Hysteresis Characteristics
Jung Hun Lee Journal of the Korean Physical Society, v.49, no.3, pp.1148-1151 |
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Journal
|
2006 |
Relationship between the liquid crystallinity and field‐effect‐transistor behavior of fluorene–thiophene‐based conjugated copolymers
임은희 Journal of Polymer Science Part A : Polymer Chemistry, v.44, no.16, pp.4709-4721 |
51 |
원문
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Conference
|
2006 |
Abrupt Metallic Transitions in p-type GaAs thin films
Sungyoul Choi International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-10 |
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Journal
|
2006 |
N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS
Jang Moon Gyu IEEE Transactions on Electron Devices, v.53, no.8, pp.1821-1825 |
28 |
원문
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Conference
|
2006 |
Measurement of the Electric and Optical Characteristics of the Hetero-Junction with n-CIS/p-CuSe
Lee Sang Su 한국광학회 학술 발표회 (하계) 2006, pp.143-144 |
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Journal
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2006 |
Solution-Processable Field-Effect Transistor Using a Fluorene- and Selenophene-Based Copolymer as an Active Layer
김영미 Macromolecules, v.39, no.12, pp.4081-4085 |
90 |
원문
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Journal
|
2005 |
Observation of Abrupt Metallic Transitions in p-Type GaAs Devices and Comparison with Avalanche Breakdown in the InGaAs APD
Youn Doo Hyeb Journal of the Korean Physical Society, v.47, no.1, pp.1-5 |
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Journal
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2002 |
Microstructure and Electrical Properties of Low Temperature Processed Ohmic Contacts to p-Type GaN
Miran Park ETRI Journal, v.24, no.5, pp.349-359 |
11 |
원문
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