Subject

Subjects : memory device

  • Articles (80)
  • Patents (21)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Conference 2024 OMB-CXL: A Micro-Benchmark Suite for Evaluating MPI Communication Utilizing Compute Express Link Memory Devices   Tu Tran  Practice and Experience in Advanced Research Computing (PEARC) 2024, pp.1-8 1 원문
Journal 2024 Technology Trends in CXL Memory and Utilization Software   Ahn Hoo Young  전자통신동향분석, v.39, no.1, pp.62-73 원문
Journal 2023 Neuromorphic Sensory Cognition-Focused on Touch and Smell   Lee Hyung-Kun  전자통신동향분석, v.38, no.6, pp.62-74 원문
Journal 2023 Neuromorphic Sensory Cognition-Focused on Touch and Smell   Kang-Ho Park  전자통신동향분석, v.38, no.6, pp.62-74 원문
Journal 2021 MemBox: Shared Memory Device for Memory-Centric Computing Applicable to Deep Learning Problems   Yongseok Choi  Electronics, v.10, no.21, pp.1-18 0 원문
Journal 2021 Photoinduced Synaptic Behavior of InxTiyO Thin Film Transistors   Lim Jungwook  Advanced Electronic Materials, v.7, no.4, pp.1-7 10 원문
Journal 2020 Multi‐Level Long‐Term Memory Resembling Human Memory Based on Photosensitive Field‐Effect Transistors with Stable Interfacial Deep Traps   Kim Tae Yoon  Advanced Electronic Materials, v.66, no.4, pp.1-7 12 원문
Journal 2020 Flexible NiO Nanocrystal-based Resistive Memory Device Fabricated by Low-temperature Solution-process   Yun Hye Won  Current Applied Physics, v.20, no.2, pp.288-292 19 원문
Conference 2018 Nonvolatile Memory Devices of ReS2 Nanosheets- Polyvinylalcohol Composites   Junjae Yang  International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2018, pp.1-1
Journal 2018 Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface   Kim Tae Yoon  ACS Applied Materials & Interfaces, v.10, no.31, pp.26405-26412 14 원문
Conference 2018 Development of spatial light modulator with ultra fine pixel pitch for electronic holography (Conference Presentation)   Hwang Chi-Sun  SPIE Commercial + Scientific Sensing and Imaging 2018 (SPIE 10666), pp.1-1 원문
Journal 2018 Solution-Processed Flexible NiO Resistive Random Access Memory Device   김수정  Solid-State Electronics, v.142, pp.56-61 9 원문
Journal 2018 High Performance SONOS Flash Memory with In-Situ Silicon Nanocrystals Embedded in Silicon Nitride Charge Trapping Layer   임재갑  Solid-State Electronics, v.140, pp.134-138 13 원문
Journal 2018 Na-Cation-Assisted Exfoliation of MX2 (M = Mo, W; X = S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer-Nanocomposite Memory Applications   연창봉  Small, v.14, no.2, pp.1-10 23 원문
Conference 2017 A Backup/Recovery Method for Fault Tolerant Memory-based Storage in Integrated Storage System   Cha Jae-Geun  International Conference on Information Technology (ICIT) 2017, pp.351-354 0 원문
Journal 2016 InGaZnO-Based Stretchable Ferroelectric Memory Transistor Using Patterned Polyimide/Polydimethylsiloxane Hybrid Substrate   Na Bock Soon  Journal of Nanoscience and Nanotechnology, v.16, no.10, pp.10280-10283 6 원문
Journal 2016 Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption   김경아  IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401 5 원문
Journal 2016 Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption   Byun Chunwon  IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401 5 원문
Journal 2015 Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate   Soon-Won Jung  Journal of Vacuum Science and Technology B, v.33, no.5, pp.1-4 18 원문
Journal 2015 Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer   Soon-Won Jung  Organic Electronics, v.16, pp.46-53 50 원문
Journal 2014 Automated and Coupled Services of Advanced Smart Surveillance Systems Toward Green IT: Tracking, Retrieval and Digital Evidence   Su Wan Park  Journal of Supercomputing, v.69, no.3, pp.1215-1234 1 원문
Journal 2013 Transparent Non-Volatile Memory Device Using Silicon Quantum Dots   Rae-Man Park  Electronic Materials Letters, v.9, no.4, pp.467-469 6 원문
Journal 2013 Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices   최민섭  Nature Communications, v.4, pp.1-7 602 원문
Conference 2012 Transparent Nonvolatile Memory Device using Silicon Quantum Dots   Rae-Man Park  International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1
Journal 2012 High‐Performance Top‐Gated Organic Field‐Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory   Kang-Jun Baeg  Advanced Functional Materials, v.22, no.14, pp.2915-2926 204 원문
Journal 2012 Organic Nonvolatile Memory Devices Fabricated by Using an Inkjet Printing Method   Yong Suk Yang  Journal of the Korean Physical Society, v.60, no.10, pp.1504-1507 6 원문
Journal 2012 Nitrogen doping effect in Ag-SbTe solid electrolyte for programmable metallisation cell memory   Park Young Sam  Electronics Letters, v.48, no.8, pp.458-460 3 원문
Journal 2011 Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory   손대호  Thin Solid Films, v.519, no.18, pp.6174-6177 0 원문
Journal 2011 Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor   Yoon Sung Min  IEEE Transactions on Electron Devices, v.58, no.7, pp.2135-2142 21 원문
Journal 2011 Self-Aligned Formation of Nanoscale Phase Change Materials for Nonvolatile Memory Application   이승윤  Japanese Journal of Applied Physics, v.50, no.6 PART 2, pp.1-5 0 원문
Journal 2011 Bending Characteristics of Ferroelectric Poly(Vinylidene Fluoride Trifluoroethylene) Capacitors Fabricated on Flexible Polyethylene Naphthalate Substrate   Yoon Sung Min  Current Applied Physics, v.11, no.3 SUPPL., pp.S219-S224 15 원문
Journal 2011 Critical Role of Top Interface Layer on the Bipolar Resistive Switching of Al/PEDOT:PSS/Al Memory Device   김종윤  Current Applied Physics, v.11, no.2 SUPPL., pp.e35-e39 7 원문
Journal 2011 Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory   정후영  Applied Physics A : Materials Science & Processing, v.102, no.4, pp.967-972 30 원문
Journal 2011 Nonvolatile Memory Thin-Film Transistors Using an Organic Ferroelectric Gate Insulator and an Oxide Semiconducting Channel   Yoon Sung Min  Semiconductor Science and Technology, v.26, no.3, pp.1-25 42 원문
Journal 2010 Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications   Kim Jongyun  Nano Letters, v.10, no.11, pp.4381-4386 547 원문
Journal 2010 Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications   Hu Young Jeong  Nano Letters, v.10, no.11, pp.4381-4386 547 원문
Journal 2010 Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices   정후영  Advanced Functional Materials, v.20, no.22, pp.3912-3917 175 원문
Journal 2010 Flexible Resistive Switching Memory Device Based on Graphene Oxide   홍설기  IEEE Electron Device Letters, v.31, no.9, pp.1005-1007 168 원문
Journal 2010 Conduction and Low-Frequency Noise Analysis in Al/α-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices   이정규  IEEE Electron Device Letters, v.31, no.6, pp.603-605 43 원문
Journal 2010 Phase-Change Memory Device Fabricated Using Solid-State Alloying   이승윤  Electronics Letters, v.46, no.9, pp.652-654 5 원문
Journal 2010 Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator   Yoon Sung Min  Electrochemical and Solid-State Letters, v.13, no.5, pp.H141-H143 17 원문
Journal 2010 A Low-Temperature-Grown TiO2-Based Device for the Flexible Stacked RRAM Application   Hu Young Jeong  Nanotechnology, v.21, no.11, pp.1-6 132 원문
Journal 2009 Transparent Flexible Resistive Random Access Memory Fabricated at Room Temperature   서중원  Applied Physics Letters, v.95, no.13, pp.1-4 125 원문
Journal 2009 Memory Metamaterials   T.Driscoll  Science, v.325, no.5947, pp.1518-1521 827 원문
Journal 2009 Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications   Yoon Sung Min  Japanese Journal of Applied Physics, v.48, no.9, pp.1-4 3 원문
Conference 2009 CMOS Compatible Phase-Change Memory Device for Low Power Consumption   Park Young Sam  International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) 2009, pp.1-2
Journal 2009 Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications   백강준  Solid-State Electronics, v.53, no.11, pp.1165-1168 23 원문
Journal 2009 Improvement of operational stability in SET states of phase-change-type nonvolatile memory devices using Sb-rich phase of Ge–Sb–Te alloys   Yoon Sung Min  Solid-State Electronics, v.53, no.5, pp.557-561 6 원문
Journal 2009 Enhanced Memory Behavior in Phase-Change Nonvolatile-Memory Devices Using Multilayered Structure of Compositionally Modified Ge–Sb–Te Films   Yoon Sung Min  Japanese Journal of Applied Physics, v.48, no.4, pp.1-6 2 원문
Conference 2008 Nonvolatile Resistive Switching Memory Devices using Organic- Inorganic Hybrid Superlattices with Monolayer Precision   Sung-Yool Choi  Molecular Electronics 2008, pp.1-1
Conference 2008 How to Improve Molecular Memory Device yield using SAMs   Hyoyoung Lee  International Conference on Nano-Molecular Electronics (ICNME) 2008, pp.1-1
Journal 2008 Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures   Yoon Sung Min  Microelectronic Engineering, v.85, no.12, pp.2334-2337 11 원문
Conference 2008 Molecular Conductance Switching of Single Ruthenium Complex Molecules and Nanostructured Memory Device   Hyoyoung Lee  Molecualr Electronics 2008, pp.1-1
Journal 2008 Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications   Lee Seung-Yun  Microelectronic Engineering, v.85, no.12, pp.2342-2345 5 원문
Conference 2008 Top Electrode Dependence on Resistance Switching Properties of Metal/TiOx/Al Memory Devices   Hu Young Jeong  International Conference on Nano Science and Nano Technology (GJ-NST) 2008, pp.1-1
Journal 2008 Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti-Si-N Heating Layers   Yoon Sung Min  Journal of the Electrochemical Society, v.155, no.6, pp.H421-H425
Conference 2008 Fabrication of Molecular Memory Devices Using Bulky Ruthenium Complexes   Chang Hojong  International Conference on Molecular Electronics and Devices (IC ME&D) 2008, pp.1-2
Conference 2008 Molecular Memory Devices using Ruthenium-terpyridine, MLCT, Complexes   Hyoyoung Lee  MRS Meeting 2008 (Spring), pp.1-1
Journal 2008 Bilayer Heater Electrode for Improving Reliability of Phase-Change Memory Devices   Lee Seung-Yun  Journal of the Electrochemical Society, v.115, no.5, pp.H314-H318 7 원문
Conference 2008 Phase-Change Memory Devices Employing SiGe Heating Layers   Lee Seung-Yun  한국 반도체 학술 대회 (KCS) 2008, pp.33-34
Journal 2007 Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films   Yoon Sung Min  Japanese Journal of Applied Physics, v.46, no.11, pp.7225-7231 17 원문
Journal 2007 Nanoscale Observations of the Operational Failure for Phase-change-type Nonvolatile Memory Devices using Ge2Sb2Te5 Chalcogenide Thin Films   Yoon Sung Min  Applied Surface Science, v.254, no.1, pp.316-320 50 원문
Journal 2007 Silicon-based Thin Films as Bottom Electrodes in Chalcogenide Nonvolatile Memories   Lee Seung-Yun  Applied Surface Science, v.254, no.1, pp.312-315 3 원문
Journal 2007 Time Dependent Resistance Change of Amorphous Phase in Phase-Change Nonvolatile Memories   Yoon Sung Min  Integrated Ferroelectrics, v.93, no.1, pp.83-89 2 원문
Journal 2007 Effects of Barrier Layers on the Electrical Behaviors of Phase-Change Memory Devices Using Sb-rich Ge-Sb-Te Films   Yoon Sung Min  Integrated Ferroelectrics, v.93, no.1, pp.75-82 4 원문
Journal 2007 Structural and Dielectric Properties of Barium Stannate Titanate Thin Films for Microwave Tunable Devices and Multifunctional Sensors   Su Jae Lee  Integrated Ferroelectrics, v.93, no.1, pp.141-147
Journal 2007 Low Power and High Speed Phase-change Memory Devices with Silicon-germanium Heating Layers   Lee Seung-Yun  Journal of Vacuum Science and Technology B, v.25, no.4, pp.1244-1248 16 원문
Journal 2007 Rose Bengal Dye on Thiol-Terminated Bilayer for Molecular Devices   Bang Gyeong Sook  Langmuir, v.23, no.9, pp.5195-5199 11 원문
Journal 2007 Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5   Yoon Sung Min  Japanese Journal of Applied Physics, v.46, no.4, pp.L99-L102 18 원문
Conference 2006 Molecular Memory Device Patterened by Organic Conducting Electrode   Hyoyoung Lee  MRS Meeting 2006 (Fall), pp.1-1
Conference 2006 An Application of Molecular Memory Devices: A Thiol-Substitued Ru-Terpyridine Self-Assembles on Gold Surface   Hyoyoung Lee  MRS Meeting 2006 (Fall), pp.1-3
Conference 2006 A Thiol-Substitued Ru[II]-Terpyridine Complexes: Syntheses, Immobilization, and Application for Molecular Memory Devices   Lee Junghyun  Asian Conference on Nanoscience and Nanotechnology (AsiaNANO) 2006, pp.1-2
Conference 2006 Development of Molecular Logic Array and Memory Device   Hyoyoung Lee  Nanotechnology Materials and Devices Conference (NMDC) 2006, pp.1-3
Conference 2006 Molecular Logic and Memory Device   Hyoyoung Lee  International Conference Korean Soceity for Bioinformatics (KSBI) 2006, pp.1-2
Journal 2006 Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations   Yoon Sung Min  IEEE Electron Device Letters, v.27, no.6, pp.445-447 112 원문
Conference 2006 Phase Change Memory Device with U-shaped Heater (PCM-U)   Park Young Sam  European Phase Change and Ovonic Symposium (EPCOS) 2006, pp.1-4
Journal 2006 Writing Current Reduction in Phase Change Memory Device with U-Shaped Heater (PCM-U)   Park Young Sam  Japanese Journal of Applied Physics, v.45, no.20, pp.516-518 16 원문
Conference 2005 Research and Development on Next-Generation Nonvolatile Memory in ETRI   Byoung Gon Yu  Symposium on Semiconductors and Integrated Circuits Technology, pp.1-4
Journal 2005 Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications   Yoon Sung Min  Japanese Journal of Applied Physics, v.44, no.24-27, pp.L869-L872 36 원문
Conference 2004 Matching output queueing with a multiple input/output-queued switch   Hyoung-Il Lee  INFOCOM 2004, pp.1135-1146 4 원문
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2006 MEMORY DEVICES INCLUDING DIELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME UNITED STATES
Registered 2018 광 복원성 반도체 장치, 이를 제조하는 방법, 및 이를 이용한 플래시 메모리 장치 KOREA KIPRIS
Registered 2009 MEMORY ACCESS DEVICE INCLUDING MULTIPLE PROCESSORS UNITED STATES
Registered 2012 RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME UNITED STATES
Registered 2020 메모리 소자 KOREA KIPRIS
Registered 2020 메모리 소자 KOREA KIPRIS
Registered 2020 메모리 소자 및 그 제조 방법 KOREA KIPRIS
Registered 2006 Phase change memory devices with micro laser injector UNITED STATES
Registered 2009 PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME UNITED STATES
Registered 2009 PROGRAMMABLE LOGIC BLOCK OF FPGA USING PHASE-CHANGE MEMORY DEVICE UNITED STATES
Registered 2020 MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME UNITED STATES
Registered 2020 INFORMATION PROCESSING APPARATUS AND METHOD OF OPERATING NEURAL NETWORK COMPUTING DEVICE THEREIN UNITED STATES
Registered 2008 PHASE-CHANGE NONVOLATILE MEMORY DEVICE USING Sb-Zn ALLOY AND MANUFACTURING METHOD THEREOF UNITED STATES
Registered 2018 OPTICALLY RESTORABLE SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, AND FLASH MEMORY DEVICE USING THE SAME UNITED STATES
Registered 2010 RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME UNITED STATES
Registered 2010 RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME UNITED STATES
Registered 2016 캐시 메모리 장치 및 그것의 동작 방법 KOREA KIPRIS
Registered 2009 TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME UNITED STATES
Registered 2012 TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME UNITED STATES
Registered 2014 플래시 메모리 장치를 위한 주소변환 시스템 및 그 방법 KOREA KIPRIS
Registered 2014 SYSTEM AND METHOD FOR EFFICIENT ADDRESS TRANSLATION ON FLASH MEMORY DEVICE UNITED STATES
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