ETRI-Knowledge Sharing Plaform

Low Noise Amplifier(LNA) Algan/Gan Hemts Comparative Study Schottky Barrier Diode(SBD) Breakdown Voltage(BDV) Compound Semiconductor Algan/Gan-On-Si Components Technology Microwave Integrated Circuit T-Gate Frequency Range Microwave Monolithic Integrated Circuits(MMIC) Pseudomorphic High Electron Mobility Transistor(pHEMT) Recessed Gate Cut-Off Frequency Gate Recess Normally-Off Schottky Contacts Algaas/Ingaas/Gaas Phemts Power Amplifiers(PAs) Field Plate Microwave Characteristics X-Band High Performance Silicon Carbide(3C-SiC) Continuous Wave(CW) Drain Current National Defense Platform Development Rf Power Rf Performance Electrical Characteristics Gan Fet Silicon Nitride Saturated Output Power Third-Order Intercept Point Current Density Wireless Personal Area Network(WPAN) High Power Conversion Efficiency High-Efficiency Operation Maximum Oscillation Frequency Optical Communications Channel Width Current Collapse Sic Substrate Merged Pin Schottky Diode Nitride Layer Recess Depth Structural Changes Enhancement-Mode Low Turn-On Voltage Simulation Results 5 Ghz Coupled Microstrip Line Parasitic Capacitance Ohmic Contact Low Leakage Current P-N Junction Depletion Mode Bias Circuit 4h-Sic S-Band Electrical Characterization Gate Shape Forward Current Light Source Plasma Treatment Plasma-Induced Damage Rf Characteristics Small Signal Gain 6 Ghz Trade-Off Threshold Voltage(Vth) Pre-Passivation Etching Process Gan Power Device Gate Leakage Current Low Temperature Cofired Ceramic(LTCC) Passivation Layer Smart Lighting And Gate Transmission Loss Forward And Reverse Gan Hemt Technology Metal-Insulator-Semiconductor(MIS) 220 Ghz Sensor Node Current Status Device Characteristics Device Performance Gate Bias Ltcc Technology Pfc Converter Thermal Conduction Atomic Composition Current Capacity Device Degradation Device Structure Dc Power Transmission Line Trend Of Increasing MOS-HEMT Water Pressure Etching Method Energy Loss Electrical Properties(I-V curve) Electroplated Cu Uwb System Hot Electrons Gate Electrode Ground-Signal-Ground High Gain Heat Dissipation Heat Sink Information And Communication Technology(ICT) Millimetre-Wave Major Switching Molecular Beam Epitaxy(MBE) Measurement Results 100 W-Class Power Hemt Power Consumption Power Density Platform-Based Physical Mechanism Resistance Measurement Resonance Method Solid State Power Amplifier Surface Layer Treatment Process Two-Stage Algan/Gan Mis-Hemt Annealing Temperature Asynchronous Processor Chip Package Cavity Resonance Branch-Line Coupler Band Bending Two-Step Junction Temperature Ultra-Wideband System X-Ray Photoelectron Spectroscopy Wilkinson Power Divider Electrical Measurements Gan Transistor Gate Fabrication Gan On Sic High Rate Improved Stability Mis Schottky Diodes Mmic Power Amplifier Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Patch Resonator Power Switching Reverse Leakage Current Surface Wave Switching Performance System-On-Package Surge Current Schottky Junction Simulation And Measurement Through Silicon Vias(TSV) Thermal Stress Thermal Stability(TGA) Applied Physics Cascode Structure Ceramic Technology Cross-Sectional Area(CSA) T-Shaped Gate 900 V Experimental Measurements Electronic Devices First Stage Gate Dielectric Fe-Doped High Temperature Characterization Heat Flux Insertion Loss X-Ray Photoemission Spectroscopy Mole Fraction Network Applications Nitrogen Gas Numerical Simulations Potential Gradient Plasma Ashing Sintered Wick Semiconductor Device Thermal Oxidation Antenna Structure Auger Electron Spectroscopy Chemical Mechanical Polishing(CMP) Dissipation Method Dielectric Properties Buffer Layer Based System Ultralow Power(ULP) Voltage Characteristics Via-Hole Wet And Dry Etching Etching Depth Fabrication Technology Gan Diode Gallium Nitride (Gan) High-Voltage And High-Power High Speed Switching High Switching Speed High Breakdown Field Ltcc Substrate Metal Layer Plasma Process Si Wafer Stable Structure Switching Loss Semi-Insulating Thick Films Thermal Characteristics As 2 Al Film Contact Resistivity Channel Layer Critical Voltage Design And Implementation Bonding Wires Wet Etching Fluorine Ions E-Beam Lithography Gan Device Gan-On-Diamond Gaas Surface Guard Ring Head Size High Thermal Conductivity Low-Power Operation Mim Capacitor Material Properties Non-Recessed Oxide-Semiconductor Field-Effect Transistors Power Transistor Plasma-Enhanced Atomic Layer Deposition Post-Annealing Radar System Representative Models Reference Surface Stress-Free Surface Passivation Sin X Scattering Parameters(S-parameters) 5.8 Ghz Si-Doped Side-Wall Concentration Ratio Contact Degradation Conduction Band Offset Cap Layer Device Simulation Main Patch Wlan Applications Gate Length High Linearity Inp Hemt Low Pressure Metal-Semiconductor Field-Effect Transistor Maximum Electric Field Matching Circuit Mesa Etching Millimeter-Wave Band Microwave Frequencies 18 Ghz Operation Test Oxide Layer Off-State Breakdown Pseudomorphic Hemt Process Technology Potential Distribution P-Doping Passive Components Reverse Bias Radar Image Ring Resonator Solar Cells Sige Bicmos Technology Semiconductor Process Sheet Resistance Trap Effect Antenna Gain Common-Source Critical Inductance C-Band Double Plasma Scaling Effect Efficiency And Power High Power Devices High Power Applications Low Onset Voltage Low Voltage Linear Trend Maximum Frequency Novel Device On-Wafer Power Electronics Parasitic Inductance Package Technology Potential Barrier Packaging Technology Region Area Si-Based Sic Power Devices Single Supply Switching Device 60 Ghz Applications Transistor Devices Thick Photoresist Thz Imaging System Au Contacts Anisotropic Etching Communications Technology Control Range Deep Reactive Ion Etching Doping Concentration Different Structures Dielectric Materials Drain Voltage Blocking Voltage Back Grinding Frequency Band High-Temperature Operation Heat Pipes Ieee 802.11a Lift-Off Process Lithography Process Low Loss Minimum Noise Figure Mmw Band 2.4 Ghz 2d Simulation On-Current Package Substrate Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Source Region Self-Heating Effect(SHE) Supply Voltage Si Substrate Schottky Interface