Journal
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2023 |
Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications
조홍래 ACS Applied Materials & Interfaces, v.15, no.44, pp.51339-51349 |
7 |
원문
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Journal
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2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Sungjae Chang Nanomaterials, v.13, no.5, pp.1-13 |
1 |
원문
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Journal
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2022 |
Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors
Kim Jieun Advanced Electronic Materials, v.8, no.4, pp.1-8 |
6 |
원문
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Journal
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2022 |
Double-Gate and Body-Contacted Nonvolatile Oxide Memory Thin-Film Transistors for Fast Erase Programming
Yang Jong-Heon IEEE Transactions on Electron Devices, v.69, no.1, pp.120-126 |
1 |
원문
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Conference
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2021 |
Study of Threshold Voltage Shift Mechanism Corresponding to the Proton Radiation Energy in GaN-based MIS-HEMTs
Sungjae Chang 대한전자공학회 학술 대회 (하계) 2021, pp.93-96 |
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Journal
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2020 |
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Sungjae Chang Nanomaterials, v.10, no.11, pp.1-11 |
11 |
원문
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Journal
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2020 |
Multi-wafer-scale Growth of WSe2 Films using a Traveling Flow-type Reactor with a Remote Thermal Se Cracker
Hang Kang Applied Surface Science, v.528, pp.1-8 |
3 |
원문
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Journal
|
2020 |
Multi-wafer-scale Growth of WSe2 Films using a Traveling Flow-type Reactor with a Remote Thermal Se Cracker
Sun Jin Yun Applied Surface Science, v.528, pp.1-8 |
3 |
원문
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Journal
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2019 |
Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs
Sungjae Chang ECS Journal of Solid State Science and Technology, v.8, no.12, pp.245-248 |
11 |
원문
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Journal
|
2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200 |
5 |
원문
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Journal
|
2017 |
1- $\mu \text{m}$ Short-Channel Oxide Thin-Film Transistors With Triangular Gate Spacer
Ji Hun Choi IEEE Electron Device Letters, v.38, no.10, pp.1398-1400 |
13 |
원문
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Conference
|
2016 |
Double-Channel Oxide Semiconductor Vertical TFTs with Mo Source/Drain Layer
Hwang Chi-Sun International Display Workshops in conjunction with Asia Display (IDW/AD) 2016, pp.274-276 |
0 |
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Journal
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2016 |
InGaZnO-Based Stretchable Ferroelectric Memory Transistor Using Patterned Polyimide/Polydimethylsiloxane Hybrid Substrate
Na Bock Soon Journal of Nanoscience and Nanotechnology, v.16, no.10, pp.10280-10283 |
6 |
원문
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Journal
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2016 |
Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer
Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.16, no.3, pp.2752-2755 |
14 |
원문
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Journal
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2016 |
A Low Temperature, Solution-Processed Poly(4-vinylphenol), YOx Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor
Shin Hyun Woo Journal of Nanoscience and Nanotechnology, v.16, no.3, pp.2632-2636 |
3 |
원문
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Journal
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2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption
김경아 IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401 |
5 |
원문
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Journal
|
2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption
Byun Chunwon IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401 |
5 |
원문
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Journal
|
2015 |
Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures
Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7526-7530 |
9 |
원문
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Journal
|
2015 |
Thickness Modulation Effects of Al2O3 Capping Layers on Device Performance for the Top-Gate Thin-Film Transistors Using Solution-Processed Poly(4-Vinyl Phenol)/Zn-Sn-O Gate Stacks
김경아 Journal of Vacuum Science and Technology B, v.33, no.3, pp.1-7 |
1 |
원문
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Conference
|
2015 |
The Highly Stable InGaZnO TFTs Deposited by High Density Plasma Sputtering
Cho Sung Haeng International Thin-Film Transistor Conference (ITC) 2015, pp.17-18 |
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Journal
|
2015 |
Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer
Soon-Won Jung Organic Electronics, v.16, pp.46-53 |
50 |
원문
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Conference
|
2014 |
The Effects of Post-Deposition Treatments of Gate Insulator on the Electrical Properties of IZO-Based Oxide TFTs
Song Chang Woo International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2014, pp.1-1 |
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Journal
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2014 |
Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method
Hwang Chi-Sun IEEE Electron Device Letters, v.35, no.3, pp.360-362 |
54 |
원문
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Journal
|
2013 |
Nonvolatile memory performance improvements for solution-processed thin-film transistors with composition-modified In–Zn–Ti–O active channel and ferroelectric copolymer gate insulator
박준용 Organic Electronics, v.14, no.9, pp.2148-2157 |
7 |
원문
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Journal
|
2013 |
Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
Rae-Man Park Electronic Materials Letters, v.9, no.4, pp.467-469 |
6 |
원문
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Conference
|
2012 |
Printed Indium Zinc Oxide Nonvolatile Memory Thin-film Transistors with P(VDF-TrFE) Gate Insulator
Asian Meeting on Ferroelectrics (AMF) 2012, pp.1-1 |
|
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Conference
|
2012 |
Nonvolatile Memory Operations of Solution-Processed In-Zn-Ti-O Thin-Film Transistors with Ferroelectric Copolymer Gate Insulator
MRS Meeting 2012 (Fall), pp.1-1 |
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Conference
|
2012 |
Electrical characteristic of IGZO oxide TFT with 3 layer gate insulator
International Workshop on Flexible and Printable Electronics (IWFPE) 2012, pp.1-3 |
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Conference
|
2012 |
Effects of the NH Content of PECVD Grown SiNx Gate Insulator on the Electrical Performance and Stability of Ti, B-doped InZnO Thin Film Transistors
MRS Meeting 2012 (Fall), pp.1-1 |
|
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Conference
|
2012 |
Effects of the rf power of PECVD for gate insulator deposition on the electrical performance and stability of Ti, B-doped InZnO thin film transistors
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) 2012, pp.1-1 |
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Conference
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2012 |
The thermal annealing effects of gate insulator on the electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors
International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1 |
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Conference
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2012 |
Oxygen Vacancy Effect for the Illumination Instability of In-Ga-O Transparent Thin Film Transistors
Ryu Hojun International Meeting on Information Display (IMID) 2012, pp.1-2 |
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Conference
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2012 |
Nonvolatile Memory Thin-Film Transistors using Organic Ferroelectric Gate Insulator
Optics+Photonics 2012, pp.1-1 |
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Conference
|
2012 |
Study on the E/D - mode AlGaN/GaN MISFET with Al2O3 gate insulator grown by Atomic Layer Deposition
International Confernece on Microelectronics and Plasma Technology (ICMAP) 2012, pp.1-1 |
|
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Conference
|
2012 |
Change of electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors depending on gate insulators
International Conference on Microelectronics and Plasma Technology (ICMAP) 2012, pp.1-1 |
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Conference
|
2011 |
Flexible Thin Film Transistor with Organic Gate Insulator and IGZO as the Active Layer
Hee-Ok Kim International Conference on Advanced Electromaterials (ICAE) 2011, pp.1-1 |
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Journal
|
2011 |
Electrical Properties of Top-Gate Oxide Thin-Film Transistors with Double-Channel Layers
Cheong Woo-Seok Journal of Crystal Growth, v.326, no.1, pp.186-190 |
9 |
원문
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Journal
|
2011 |
Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor
Yoon Sung Min IEEE Transactions on Electron Devices, v.58, no.7, pp.2135-2142 |
21 |
원문
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Journal
|
2011 |
Enhanced Bias Illumination Stability of Oxide Thin Film Transistor through Insertion of Ultrathin Positive Charge Barrier into Active Material
Oh Himchan Applied Physics Letters, v.99, no.2, pp.1-3 |
36 |
원문
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Journal
|
2011 |
Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing
Minseok Kim Electrochemical and Solid-State Letters, v.14, no.8, pp.H333-H336 |
38 |
원문
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Journal
|
2011 |
“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel
Yoon Sung Min Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499 |
2 |
원문
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Journal
|
2011 |
Water-Related Abnormal Instability of Transparent Oxide/Organic Hybrid Thin Film Transistors
Yang Shinhyuk Applied Physics Letters, v.98, no.10, pp.1-3 |
30 |
원문
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Journal
|
2011 |
Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell
Yoon Sung Min Applied Physics A : Materials Science & Processing, v.102, no.4, pp.983-990 |
11 |
원문
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Journal
|
2011 |
n-Ga-Zn-oxide Thin-film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target
Cheong Woo-Seok Journal of the Korean Physical Society, v.58, no.3, pp.608-611 |
3 |
원문
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Journal
|
2011 |
Nonvolatile Memory Thin-Film Transistors Using an Organic Ferroelectric Gate Insulator and an Oxide Semiconducting Channel
Yoon Sung Min Semiconductor Science and Technology, v.26, no.3, pp.1-25 |
42 |
원문
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Journal
|
2010 |
Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)
Yoon Sung Min Organic Electronics, v.11, no.11, pp.1746-1752 |
18 |
원문
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Journal
|
2010 |
Device Reliability under Electrical Stress and Photo Response of Oxide TFTs
Park Sang-Hee Journal of the Society for Information Display, v.18, no.10, pp.779-788 |
11 |
원문
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Conference
|
2010 |
Flexible Nonvolatile Memory Thin-Film Transistors Using Oxide Semiconductor Active Channel and Organic Ferroelectric Gate Insulator
윤성민 Asian Meeting on Ferroelectricity (AMF) 2010 / Asian Meeting on Electroceramics (AMEC) 2010, pp.321-321 |
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Journal
|
2010 |
Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer
Yoon Sung Min Journal of the Electrochemical Society, v.157, no.7, pp.H771-H778 |
3 |
원문
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Journal
|
2010 |
Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell
Yoon Sung Min IEEE Electron Device Letters, v.31, no.2, pp.138-140 |
14 |
원문
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Journal
|
2010 |
Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator
Yoon Sung Min Electrochemical and Solid-State Letters, v.13, no.5, pp.H141-H143 |
17 |
원문
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Journal
|
2009 |
Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer
Yoon Sung Min Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6 |
32 |
원문
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Conference
|
2009 |
Oxide TFT Structure Affecting the Device Performance
Park Sang-Hee 한국정보디스플레이학회 학술 대회 2009, pp.385-388 |
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Conference
|
2009 |
High Mobility In-Ga-Zn-Oxide Thin-Film Transistor with Sb2TeOx Gate Insulator Fabricated by Reactive Sputtering
Cheong Woo-Seok International Conference on Solid State Devices and Materials (SSDM) 2009, pp.1-2 |
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Conference
|
2009 |
Plastic-Based Organic Thin-Film Transistors Using Solution-Processed Nanocomposite Insulators
Gi Heon Kim Advanced Display Materials and Devices (ADMD) 2009, pp.96-96 |
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Journal
|
2009 |
Optimization of an Amorphous In-Ga-Zn-Oxide Semiconductor for a Top-Gate Transparent Thin-Film Transistor
Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.5, pp.1879-1884 |
9 |
원문
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Journal
|
2009 |
Novel Tapered Macrogate Structure for Carbon Nanotube based Field Emission Display
Jeong Jin Woo JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.27, no.3, pp.1097-1100 |
14 |
원문
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Journal
|
2009 |
High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators
Cheong Woo-Seok Japanese Journal of Applied Physics, v.48, no.4, pp.1-15 |
16 |
원문
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Journal
|
2009 |
Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
Jaeheon Shin ETRI Journal, v.31, no.1, pp.62-64 |
189 |
원문
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Journal
|
2009 |
Passivation of Bottom-Gate IGZO Thin Film Transistors
Cho Doo-Hee Journal of the Korean Physical Society, v.54, no.1, pp.531-534 |
43 |
원문
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Journal
|
2009 |
Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors
Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477 |
1 |
원문
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Journal
|
2008 |
Downscaling of Organic Field‐Effect Transistors with a Polyelectrolyte Gate Insulator
Lars Herlogsson Advanced Materials, v.20, no.24, pp.4708-4713 |
140 |
원문
|
Conference
|
2008 |
Top Gate ZnO-TFT Driving AM-OLED Fabricated on a Plastic Substrate
Hwang Chi-Sun International Meeting on Information Display (IMID) 2008, pp.1466-1469 |
0 |
|
Conference
|
2008 |
High Mobility Transparent SnO2 and ZnO-SnO2 Thin-film Transistors with Double-layed Gate Insulators
Cheong Woo-Seok International Conference on Solid State Devices and Materials (SSDM) 2008, pp.498-499 |
|
|
Conference
|
2008 |
42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM‐OLED Display
Park Sang-Hee Society for Information Display (SID) International Symposium 2008, pp.629-632 |
39 |
원문
|
Journal
|
2007 |
Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition
Park Sang-Hee Electrochemical and Solid-State Letters, v.11, no.1, pp.H10-H14 |
104 |
원문
|
Journal
|
2007 |
Electric Characteristics of Organic Thin-film Transistors and Logic Circuits with a Ferroelectric Gate Insulator
Yong Suk Yang Thin Solid Films, v.515, no.19, pp.7688-7691 |
2 |
원문
|
Conference
|
2006 |
Fabrication of Organic Thin-Film Transistors with Polymer Gate Insulators on Plastic Substrate
Seongdeok Ahn International Meeting on Information Display 2006, pp.1170-1173 |
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|
Journal
|
2006 |
The Effect of Channel Length on Turn-on Voltage in Pentacene-Based Thin Film Transistor
Koo Jae Bon Synthetic Metals, v.156, no.7-8, pp.533-536 |
25 |
원문
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