Subject

Subjects : Schottky barrier

  • Articles (86)
  • Patents (6)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2024 Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode   Lee Hun Ki  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.42, no.4, pp.1-10 2 원문
Journal 2024 β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV   Kyu Jun Cho  Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5 2 원문
Journal 2023 Port‐assignment modelling of anti‐parallel Schottky barrier diode and 0.3‐THz sub‐harmonic mixer design   Young Ho Kim  Electronics Letters, v.59, no.2, pp.1-2 2 원문
Journal 2022 Switching and Heat-Dissipation Performance Analysis of an LTCC-Based Leadless Surface Mount Package   Jung Dong Yun  Journal of Semiconductor Technology and Science, v.22, no.1, pp.1-9 1 원문
Journal 2021 Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates   Kim Zin-Sig  Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 원문
Journal 2021 Cost-effective photonics-based THz wireless delivery system using a directly modulated DFB-LD   Kim Eon-Sang  Optics Communications, v.492, pp.1-6 10 원문
Journal 2021 Highly Reliable THz Hermetic Detector based on InGaAs/InP Schottky Barrier Diode   Shin Jun-Hwan  Infrared Physics and Technology, v.115, pp.1-5 7 원문
Conference 2021 Switching and Heat-dissipation Performance Analysis of an LTCC-based Leadless Surface Mount Package Using a Power Factor Correction Converter   Jung Dong Yun  International Conference on Electronics, Information and Communication (ICEIC) 2021, pp.811-813 2 원문
Journal 2021 Cost-Effective Photonics-Based THz Wireless Transmission Using PAM-N Signals in the 0.3 THz Band   Sang Rok Moon  IEEE/OSA Journal of Lightwave Technology, v.39, no.2, pp.357-362 45 원문
Conference 2020 30 A / 900 V AlGaN/GaN-on-Si Double-Packaged Schottky Barrier Diodes with Controlled Passivation Edge   Jeho Na  International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2020, pp.1-1
Conference 2020 Multi-layer Ceramic based Surface Mount Device Packaging for 1200 V and 1700 V SiC SBD Power Semiconductors   Jung Dong Yun  International Conference on Consumer Electronics (ICCE) 2020 : Asia, pp.603-606 4 원문
Conference 2020 1700 V Full-SiC Half-bridge Power Module with Low Switching Loss   Jung Dong Yun  Electronic System-Integration Technology Conference (ESTC) 2020, pp.1-4 1 원문
Journal 2020 High-Speed and Cost-Effective Reflective Terahertz Imaging System Using a Novel 2D Beam Scanner   Mugeon Kim  IEEE/OSA Journal of Lightwave Technology, v.38, no.16, pp.4237-4243 26 원문
Journal 2020 High-Speed and Cost-Effective Reflective Terahertz Imaging System Using a Novel 2D Beam Scanner   Lee Eui Su  IEEE/OSA Journal of Lightwave Technology, v.38, no.16, pp.4237-4243 26 원문
Conference 2020 Thermal Behavior of AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrate   Kim Zin-Sig  한국 반도체 학술 대회 (KCS) 2020, pp.783-783
Journal 2020 Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors   Jisu Jang  ACS Applied Materials & Interfaces, v.12, no.4, pp.5031-5039 63 원문
Journal 2020 Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors   김윤섭  ACS Applied Materials & Interfaces, v.12, no.4, pp.5031-5039 63 원문
Conference 2019 Schottky Barrier Height Modulation by ZnO Interlayer for High-Performance MoS2 Field-Effect Transistors   Jisu Jang  International Conference on Advanced Electromaterials (ICAE) 2019, pp.1-1
Journal 2019 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond   Kim Zin-Sig  Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122 원문
Conference 2019 Photonics-based Multi-spectral THz Imaging using a Dual-mode Laser and a Telecentric f-θ Lens   Kiwon Moon  Conference on Lasers and Electro-Optics (CLEO) 2019, pp.1-2 2 원문
Conference 2019 Fabrication and Characterication of Using Room Temperature Implantation 4H-SiC Schottky Barrier Diode   Doohyung Cho  SiC 반도체 컨퍼런스 2019, pp.57-57
Journal 2018 Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure   칸무하메드  ACS Applied Materials & Interfaces, v.10, no.28, pp.23961-23967 19 원문
Journal 2018 High Performance Self-gating Graphene/MoS2 Diode Enabled by Asymmetric Contacts   무하마드칸  Nanotechnology, v.29, no.39, pp.1-6 7 원문
Conference 2018 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond   Kim Zin-Sig  대한전자공학회 학술 대회 (하계) 2018, pp.195-198
Journal 2018 Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2   무하마드 칸  Chemistry of Materials, v.30, no.3, pp.1011-1016 22 원문
Conference 2018 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond   Kim Zin-Sig  한국 반도체 학술 대회 (KCS) 2018, pp.1-1
Journal 2017 Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss   Jung Dong Yun  ETRI Journal, v.39, no.6, pp.866-873 12 원문
Conference 2017 Fabrication of Schottky Barrier Diodes on AlGaN/GaN Heterostructures on CVD Diamond Substrate   Kim Zin-Sig  Asia-Pacific Workshop on Widegap Semiconductors (APWS) 2017, pp.1-1
Journal 2017 Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single- Layer MoS2 Device   Mohammad Asif Khan  ACS Applied Materials & Interfaces, v.9, no.32, pp.26983-26989 8 원문
Journal 2017 Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure   Lee Hyun Soo  Journal of Semiconductor Technology and Science, v.17, no.3, pp.354-362 1 원문
Journal 2017 Thickness-dependent Schottky Barrier Height of MoS2 Field-effect Transistors   김준영  Nanoscale, v.9, no.18, pp.6151-6157 127 원문
Journal 2016 Surface Al Doping of 4H-SiC Via Low Temperature Annealing   Junbo Park  Applied Physics Letters, v.109, no.3, pp.1-5 5 원문
Conference 2016 Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact   Kim Zin-Sig  대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403
Conference 2016 Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate   Jongmin Lee  한국 반도체 학술 대회 (KCS) 2016, pp.1-2
Journal 2016 Real-time Imaging of Moving Living Objects using a Compact Terahertz Scanner   Han Sang-Pil  Applied Physics Express, v.9, no.2, pp.1-3 7 원문
Conference 2015 Improving Breakdown Voltage of SiC Schottky Barrier Diode using Field Metal Ring Structure   Junbo Park  International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1
Conference 2015 Suppression of Leakage Current in Dual Schottky Barrier Diode using BOE Treatment   Hyun-Gyu Jang  International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1
Journal 2015 0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal   Lee Hyun Soo  IEEE Electron Device Letters, v.36, no.11, pp.1132-1134 51 원문
Conference 2015 700 V / 20 A Double AlGaN/GaN Lateral Schottky Barrier Diodes with Recessed Anode Structure on Silicon Substrate   나제호  International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2
Journal 2015 Low Leakage Current AlGaN/GaN on Si-Based Schottky Barrier Diode with Bonding-Pad Electrode Mesa Etching   Hyun-Gyu Jang  Japanese Journal of Applied Physics, v.54, no.7, pp.1-5 3 원문
Conference 2015 Portable Terahertz Scanner for Imaging and Spectroscopy Using InP-Related Devices   Park Kyung Hyun  Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VIII (SPIE 9362), pp.1-11 0 원문
Journal 2014 Real-Time Continuous-Wave Terahertz Line Scanner Based on a Compact 1 × 240 InGaAs Schottky Barrier Diode Array Detector   Han Sang-Pil  Optics Express, v.22, no.23, pp.28977-28983 34 원문
Conference 2014 Zero-Bias InGaAs Schottky Barrier Diode Array for Terahertz Imaging Applications   Hyunsung Ko  OptoElectronics and Communications Conference (OECC) 2014 / Australian Conference on Optical Fibre Technology (ACOFT) 2014, pp.982-983 1
Journal 2014 Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths   Park Young Rak  Electronics Letters, v.50, no.16, pp.1164-1165 17 원문
Conference 2014 Terahertz Reflection Imaging based on Schottky Barrier Diode Detectors     International Nanotech Symposium and Nano-Convergence Expo (NANO KOREA) 2014, pp.1-1
Conference 2014 Photonic Devices for Tunable Continuous-Wave Terahertz Generation and Detection   Park Kyung Hyun  Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII (SPIE 8985), pp.1-10 6 원문
Journal 2013 InGaAs Schottky Barrier Diode Array Detector for a Real-Time Compact Terahertz Line Scanner   Han Sang-Pil  Optics Express, v.21, no.22, pp.25874-25882 72 원문
Conference 2013 Terahertz Imaging Using InGaAs Schottky Barrier Diode Array Detectors   Han Sang-Pil  International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) 2013, pp.1-2 1 원문
Journal 2012 Low Temperature Characteristics of Schottky Barrier Single Electron and Single Hole Transistors   Jang Moon Gyu  ETRI Journal, v.34, no.6, pp.950-953 1 원문
Journal 2012 Enhancement in Light Emission Efficiency of Si Nanocrystal Light-Emitting Diodes by a Surface Plasmon Coupling   Huh Chul  Applied Physics Letters, v.100, no.18, pp.1-5 32 원문
Journal 2012 The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors   Jang Moon Gyu  Thin Solid Films, v.520, no.6, pp.2166-2169 1 원문
Journal 2011 A 1.485-Gbit/s Video Signal Transmission System at Carrier Frequencies of 240 GHz and 300 GHz   Tae Jin Chung  ETRI Journal, v.33, no.6, pp.965-968 8 원문
Journal 2011 Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs   Jun Myungsim  Semiconductor Science and Technology, v.26, no.12, pp.1-4 0 원문
Journal 2011 Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation   Jun Myungsim  Journal of Nanoscience and Nanotechnology, v.11, no.8, pp.7339-7342 0 원문
Journal 2011 Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory   손대호  Thin Solid Films, v.519, no.18, pp.6174-6177 0 원문
Conference 2011 A new vertical GaN SBD employing in-situ metallic gallium ohmic contact   임지용  International Symposium on Power Semiconductor Devices (ISPSD) 2011, pp.247-250 7 원문
Journal 2011 High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm   Jun Myungsim  Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4 1 원문
Journal 2011 Analysis of Transconductance (gm) in Schottky-Barrier MOSFETs   최성진  IEEE Transactions on Electron Devices, v.58, no.2, pp.427-432 35 원문
Journal 2010 P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain   Choi Sungjin  IEEE Transactions on Electron Devices, v.57, no.8, pp.1737-1742 4 원문
Journal 2010 Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor   Jang Moon Gyu  Journal of Vacuum Science and Technology B, v.28, no.4, pp.799-801 6 원문
Journal 2010 A 1.485 Gbps Wireless Video Signal Transmission System at 240 GHz   Lee Won Hui  한국인터넷방송통신학회논문지, v.10, no.4, pp.105-113
Conference 2010 A Novel TFT with a Laterally Engineered Bandgap for of 3D Logic and Flash Memory   최성진  Symposium on VLSI Technology (VLSIT) 2010, pp.111-112 26 원문
Journal 2010 High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain   Choi Sungjin  IEEE Electron Device Letters, v.31, no.3, pp.228-230 15 원문
Journal 2009 Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique   문란주  Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624 6 원문
Journal 2009 Fabrication of N- and P-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods   신진욱  Japanese Journal of Applied Physics, v.48, no.4, pp.1-4 0 원문
Journal 2009 Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory   최성진  IEEE Electron Device Letters, v.30, no.1, pp.78-81 20 원문
Journal 2009 Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain   Yang Jong-Heon  Thin Solid Films, v.517, no.5, pp.1825-1828 5 원문
Journal 2008 Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions   신진욱  IEEE Electron Device Letters, v.29, no.12, pp.1336-1339 4 원문
Conference 2008 High Speed Flash Memory and 1T-DRAM on Dopant Segregated Schottky Barrier (DSSB) FinFET SONOS Device for Multi-functional SoC Applications   최성진  International Electron Devices Meeting (IEDM) 2008, pp.1-4 17 원문
Journal 2008 20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors   Jang Moon Gyu  Applied Physics Letters, v.93, no.19, pp.1-3 11 원문
Journal 2008 Current Flow Mechanisms of Platinum-Silicided p-Type Schottky Barrier MOSFETs   Jang Moon Gyu  Journal of the Korean Physical Society, v.53, no.4, pp.2175-2178
Conference 2008 Current Flow Mechanism in Schottky-Barrier MOSFETs and Application to the 1T-DRAM   최성진  International Conference on Solid State Devices and Materials (SSDM) 2008, pp.226-227
Conference 2008 High Performance Schottky Barrier MOSFETs with Workfunction Engineering   Jang Moon Gyu  Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2 1 원문
Journal 2008 Schottky Barrier Heights of n/p-type Erbium-silicided Schottky Diodes   Jun Myung Sim  Microelectronic Engineering, v.85, no.5-6, pp.1395-1398 5 원문
Journal 2008 Analysis of Temperature-dependent Barrier Heights in Erbium-silicided Schottky Diodes   Jun Myung Sim  Journal of Vacuum Science and Technology B, v.26, no.1, pp.137-140 8 원문
Journal 2007 Effects of Metal Silicide/Silicon Interface Trap Distribution on Schottky Barrier MOSFET Devices   조원주  Journal of the Korean Physical Society, v.51, pp.S313-S317
Conference 2007 Schottky Barrier Heights of ErSi1.7 Schottky Diodes   Jun Myung Sim  International Conference on Micro and Nano Engineering (MNE) 2007, pp.1-2
Journal 2007 Analysis of Interface Trap States at Schottky Diode by using Equivalent Circuit Modeling   Jun Myung Sim  Journal of Vacuum Science and Technology B, v.25, no.1, pp.82-85 5 원문
Journal 2006 N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS   Jang Moon Gyu  IEEE Transactions on Electron Devices, v.53, no.8, pp.1821-1825 28 원문
Conference 2006 10-nm-Gate-Length n-type Schottky barrier MOSFETs with High Current Drivability   Jang Moon Gyu  Silicon Nanoelectronics Workshop (SNW) 2006, pp.1-2
Conference 2006 Schottky Barrier MOSFETs for Nano-Regime Applications   Jang Moon Gyu  MRS Meeting 2006 (Spring), pp.1-18
Journal 2006 Schottky Barrier MOSFETs with High Current Drivability for Nano-regime Applications   Jang Moon Gyu  Jounal of Semiconductor Technology and Science, v.6, no.1, pp.10-15
Journal 2006 Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors   Jang Moon Gyu  Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732 32 원문
Conference 2005 Scalability of Schottky Barrier MOSFETs for Nano-Regime Applications   Jang Moon Gyu  Silicon Nanoelectronics Workshop (SNW) 2005, pp.1-3
Journal 2003 Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications   Jang Moon Gyu  IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209 16 원문
Journal 2002 Analysis of Schottky Barrier Height in Small Contacts Using a Thermionic-Field Emission Model   Jang Moon Gyu  ETRI Journal, v.24, no.6, pp.455-461 39
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2020 SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME UNITED STATES
Registered 2006 SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME UNITED STATES
Registered 2007 쇼트키 장벽 관통 트랜지스터 및 그 제조방법 KOREA KIPRIS
Registered 2006 쇼트키 장벽 관통 트랜지스터 제조방법 KOREA
Registered 2019 쇼트키 장벽 다이오드 및 그의 제조 방법 KOREA KIPRIS
Registered 2007 쇼트키 장벽 박막 트랜지스터 제조방법 KOREA KIPRIS
연구보고서 검색결과
Type Year Research Project Primary Investigator Download
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