Subjects : GaN HEMT

Articles (98)
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Type	Year	Title	Cited
Journal	2025	Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging Junhyung Kim Electronics Letters, v.61, no.1, pp.1-4	0
Conference	2024	A Ku-Band Low-Noise Amplifier MMIC Using 0.15-µm GaN HEMT Technology Woojin Chang International Symposium on Antennas and Propagation (ISAP) 2024, pp.1-2	0
Conference	2024	Optimization of GaN HEMT geometry for High Performance RF Application Jung Hyunwook International Workshop on Nitride Semiconductors (IWN) 2024, pp.1-2
Conference	2024	Enhancing Ohmic Contacts in GaN HEMT through Optimization of Ramp-up Rate in Annealing Process Junhyung Kim International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1104-1105	0
Conference	2024	0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band Junhyung Jeong International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457	0
Journal	2024	The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8	0
Conference	2024	Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs Jung Hyunwook International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444	0
Conference	2024	Electrical characteristics of regrown AlGaN/GaN HEMT for implementation of current aperture vertical electron transistors Kwak Hyeontak 한국LED·광전자학회 학술대회 2024, pp.1-1
Conference	2024	GaN HEMT 소자의 게이트 열처리 공정 유무에 따른 DC 특성 분석 Junhyung Kim 한국전자파학회 종합 학술 대회 (하계) 2024, pp.693-693
Conference	2024	X-band HPA MMIC using The ETRI 0.15μm GaN HEMT Process Junhyung Jeong 한국전자파학회 종합 학술 대회 (하계) 2024, pp.277-277
Conference	2024	A 15-W X-Band Power Amplifier MMIC Using 0.15-μm GaN HEMT Technology Woojin Chang 대한전자공학회 학술 대회 (하계) 2024, pp.521-524
Journal	2024	X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling Junhyung Jeong Electronics Letters, v.60, no.10, pp.1-3	1
Journal	2024	Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate Jung Hyunwook Materials Science in Semiconductor Processing, v.170, pp.1-5	2
Conference	2024	The Impact of T-Gate Head Size on Radiation Tolerance in GaN HEMTs Sungjae Chang 한국반도체 학술대회 (KCS) 2024, pp.397-397
Journal	2023	Theoretical and Experimental Analysis of Reversed Uneven Power Splitting Technique in GaN MMIC Doherty Power Amplifiers Kim Cheol Ho IEEE Access, v.11, pp.126098-126109	1
Conference	2023	Novel T-Shaped Gate Structure of AlGaN/GaN HEMTs on Si for RF Application Jung Hyunwook The Electrochemical Society (ECS) Meeting 2023, pp.1-1
Conference	2023	Ku-Band 35W Power Amplifier MMIC Using 0.15 µm GaN HEMT Technology Youn Sub Noh PhotonIcs and Electromagnetics Research Symposium (PIERS) 2023, pp.794-797	2
Conference	2022	Effect of T-gate Structure on RF Characteristic in AlGaN/GaN HEMTs Jung Hyunwook International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1
Conference	2022	InAlGaN/GaN HEMTs with over cut-off frequency of 160 GHz Sungjae Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1
Conference	2022	Ku-band SPDT Switch MMIC Design Using 0.2um GaN HEMT Process Youn Sub Noh 한국전자파학회 종합 학술 대회 (동계) 2022, pp.354-354
Journal	2021	Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications 문석호 ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592	13
Conference	2021	Design of A Ka-Band High Efficiency Power Amplifier MMIC Based on GaN HEMT Technology for 5G Base Station An Hyunbe 한국전자파학회 종합 학술 대회 (하계) 2021, pp.634-635
Conference	2021	Fabrication and Characteristics of InAlGaN/GaN HEMT Jung Hyunwook 대한전자공학회 학술 대회 (하계) 2021, pp.223-225
Conference	2021	Analysis of Temperature Characteristics of Gate Channel by DC Bias Conditions for GaN Large-Sized HEMT Modeling Woojin Chang 대한전자공학회 학술 대회 (하계) 2021, pp.315-319
Journal	2021	Technical Trends in GaN RF Electronic Device and Integrated Circuits for 5G Mobile Telecommunication Jongmin Lee 전자통신동향분석, v.36, no.3, pp.53-64
Conference	2021	X-band 20W Power Amplifier MMIC Developement Using 0.2um GaH HEMT Process Youn Sub Noh 통신 정보 합동 학술 대회 (JCCI) 2021, pp.1-1
Conference	2021	Broadband SPDT Switch MMIC Development Using 0.2um GaN HEMT Process Youn Sub Noh 한국전자파학회 종합 학술 대회 (동계) 2021, pp.139-139
Conference	2020	Frequency characteristics change according to the source and drain spacing of AlGaN / GaN HEMT device Kang Soo Cheol 한국전자파학회 종합 학술 대회 (하계) 2020, pp.543-543
Conference	2020	Characteristics of AlGaN/GaN HEMT with Selective Internal Inactive Area Jongmin Lee 대한전자공학회 학술 대회 (하계) 2020, pp.488-489
Conference	2020	Ohmic Contacts with Recess-etched and TMAH-treated Nanometer-scale Patterns for Improved Performance and Reliability in AlGaN/GaN HEMTs Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2020, pp.790-790
Journal	2020	Fabrication of Multi-Fin-Gate GaN HEMTs Using Honeycomb Shaped Nano-Channel Kim Jeong Jin 전기전자재료학회논문지, v.33, no.1, pp.16-20
Journal	2019	GaN MIS-HEMT PA MMICs for 5G Mobile Devices Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200	5
Conference	2018	E-mode GaN HEMT Devices and PA MMICs for 5G Mobile Handsets Kim Seong-Il International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2018, pp.255-255
Journal	2018	Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure 곽현탁 Applied Sciences, v.8, no.6, pp.1-14	25
Conference	2018	Fabrication and Characteristics of GaN HEMT on SiC Device with Internal Backside Via-hole in Active Region for MMIC Applications Min Byoung-Gue 한국 반도체 학술 대회 (KCS) 2018, pp.663-663
Conference	2018	Modeling and MMIC design of GaN HEMT device with internal back-side via Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2018, pp.634-634
Conference	2018	Breakdown and Power Characteristics of GaN HEMTs with a Variation of Device Dimensions for S-band Applications Jongmin Lee 한국 반도체 학술 대회 (KCS) 2018, pp.667-667
Conference	2018	28GHz MMIC Power Amplifier based on 0.15um GaN HEMT Technology Dong Min Kang 한국 반도체 학술 대회 (KCS) 2018, pp.1-1
Journal	2017	6-GHz-to-18-GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance Shin Dong Hwan ETRI Journal, v.39, no.5, pp.737-745	13
Journal	2017	A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology Shin Dong Hwan Journal of Electromagnetic Engineering and Science, v.17, no.4, pp.178-180	5
Conference	2017	내부 BVIA가 있는 GaN HEMT 소자 특성 및 모델링 Kim Seong-Il 대한전자공학회 RF/아날로그 회로 워크숍 2017, pp.397-398
Conference	2017	Development of a 0.15 μm GaN HEMT MMIC Process Hae Cheon Kim Asia-Pacific Workshop on Widegap Semiconductors (APWS) 2017, pp.1-2
Journal	2017	Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364	2
Journal	2017	Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369	7
Conference	2017	Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate Sungjae Chang International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89	4
Conference	2017	X-Band GaN MMIC Power Amplifier for the SSPA of a SAR System Shin Dong Hwan International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.93-95	26
Conference	2017	DC and RF Characterization of AlGaN/GaN HEMTs Devices Fabricated Using Digital Gate Recessing Hyung Sup Yoon 한국전기전자재료학회 학술 대회 (하계) 2017, pp.1-1
Journal	2017	High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161	15
Conference	2017	GaN HEMT Device Modeling and MMIC for Ka-band Applications Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2017, pp.1-1
Journal	2017	ETRI 0.25 μm GaN MMIC Process and X-Band Power Amplifier MMIC Lee Sang-Heung 한국전자파학회논문지, v.28, no.1, pp.1-9
Journal	2016	Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire Sungjae Chang ECS Journal of Solid State Science and Technology, v.5, no.12, pp.N102-N107	6
Journal	2016	Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410	28
Conference	2016	GaN HEMT 모델링 및 전력 증폭기 MMIC 설계 Kim Seong-Il 대한전자공학회 RF/아날로그 회로 워크숍 2016, pp.590-591
Conference	2016	Investgation of GaN Channel Quality on the Device Properties in AIGaN/GaN HEMTs Sungjae Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
Conference	2016	Characterization of 0.18 μm Gate-Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing Hyung Sup Yoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
Conference	2016	Surface Treatment for Recessed Gate and its Effects on the Performance of Enhancement-mode AlGaN/GaN HEMTs Jae Won Do International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
Conference	2016	Backside Process of AlGaN/GaN HEMT on SiC with Optimized Via-Hole Etching Conditions Min Byoung-Gue International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
Conference	2016	The Characterization of High Power Density 0.15 μm AlGaN/GaN HEMTs for Their MMIC Hae Cheon Kim Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) 2016, pp.W17-W18
Conference	2016	A 16 Watt X-Band GaN High Power Amplifier MMIC for Phased Array Applications Youn Sub Noh International Conference on Microwave and Millimeter Wave Technology (ICMMT) 2016, pp.1-3	7
Conference	2016	ETRI 0.25 μm GaN HEMT 공정을 이용한 X-대역 3 W 및 C-대역 5 W 전력 증폭기 MMIC Lee Sang-Heung 한국전자파학회 종합 학술 대회 (하계) 2016, pp.168-169
Conference	2016	GaN HEMT Modeling for X-band Applications Kim Seong-Il 대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560
Conference	2016	X-band 3 W and 6 W Power Amplifier MMICs using ETRI 0.25 μm GaN HEMT Lee Sang-Heung 대한전자공학회 종합 학술 대회 (하계) 2016, pp.1-3
Conference	2016	A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2016, pp.1-1
Conference	2016	Advanced Backend Processing and its Effects on the Performance and the Yield of GaN HEMT Deviceson SiC Substrate Jae Won Do 한국 반도체 학술 대회 (KCS) 2016, pp.1-1
Conference	2016	Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate Jongmin Lee 한국 반도체 학술 대회 (KCS) 2016, pp.1-2
Conference	2016	X-band 5W AlGaN/GaN HEMT Power MMICs Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2016, pp.1-1
Journal	2016	0.25 μm AlGaN/GaN HEMT Devices and 9 GHz Power Amplifier Dong Min Kang 한국전자파학회논문지, v.27, no.1, pp.76-79
Conference	2015	GaN High Power Amplifier MMIC for 30W Compact Doherty Amplifier for LTE Active Antenna System Chang Dong Pil European Microwave Integrated Circuits Conference (EuMIC) 2015, pp.265-268	6
Journal	2015	Asymmetric Broadband Doherty Power Amplifier Using GaN MMIC for Femto-Cell Base-Station 지승훈 IEEE Transactions on Microwave Theory and Techniques, v.63, no.9, pp.2802-2810	57
Journal	2015	Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole Min Byoung-Gue Journal of the Korean Physical Society, v.67, no.4, pp.718-722	2
Journal	2015	Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs Kyu Jun Cho Journal of the Korean Physical Society, v.67, no.4, pp.682-686	3
Journal	2015	DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2 Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657	3
Conference	2015	X-Band Power Amplifier Using 40W GaN-on-SiC HEMT Dong Min Kang 대한전자공학회 종합 학술 대회 (하계) 2015, pp.231-234
Conference	2015	Variations of DC Properties of AlGaN/GaN HEMT by Process Enhancement of Gate Recess Min Byoung-Gue 대한전자공학회 종합 학술 대회 (하계) 2015, pp.192-195
Conference	2015	Wide Head T-Shaped Gate Process for Low-Noise AlGaN/GaN HEMTs Hyung Sup Yoon International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2015, pp.363-366
Conference	2015	GaN High Power Devices and Their Applications Mun Jae Kyoung The Electrochemical Society (ECS) Meeting 2015 (ECS Transactions 66), v.66, no.1, pp.79-83	0
Journal	2015	GaN HEMT MMIC Doherty Power Amplifier with High Gain and High PAE 박윤식 IEEE Microwave and Wireless Components Letters, v.25, no.3, pp.187-189	22
Conference	2015	X-band 40W Pulsed Power Amplifier using 0.2um AlGaN/GaN HEMT Dong Min Kang 한국 반도체 학술 대회 (KCS) 2015, pp.192-192
Conference	2015	Low-Noise Microwave Performance of AlGaN/GaN HEMTs on SiC with Wide Head T-Shaped Gate Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2015, pp.191-191
Journal	2015	X‐band 100 W solid‐state power amplifier using a 0.25 μM GaN HEMT technology Dong Min Kang Microwave and Optical Technology Letters, v.57, no.1, pp.212-216	6
Conference	2014	Fabrication of GaN HEMT on SiC with Taper-Shaped Backside Via-Hole Min Byoung-Gue International Symposium Physics of Semiconductors and Applications (ISPSA) 2014, pp.80-80
Conference	2014	Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs Kyu Jun Cho International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.131-131
Conference	2014	100W Pulsed SSPA Using 25W AlGaN/GaN HEMT Technology at 9.2 - 9.5 GHz Dong Min Kang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.75-75
Conference	2014	DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Recessed Gate by ICP Etching of BCl3/SF6 Hyung Sup Yoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.81-81
Journal	2014	Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests Jongmin Lee Journal of the Korean Physical Society, v.64, no.10, pp.1446-1450	3
Conference	2014	Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1
Journal	2014	X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology Woojin Chang Microwave and Optical Technology Letters, v.56, no.1, pp.96-99	9
Conference	2013	X-Band Low Noise Amplifier MMIC Using AlGaN/GaN HEMT Technology on SiC Substrate Woojin Chang Asia-Pacific Microwave Conference (APMC) 2013, pp.681-684	7
Conference	2013	GaN MMIC Broadband Doherty Power Amplifier 지승훈 Asia-Pacific Microwave Conference (APMC) 2013, pp.603-605	9
Conference	2013	고온 저장 시험에 의한 GaN HEMT 소자의 특성 변화 Jongmin Lee 한국 반도체 학술 대회 (KCS) 2013, pp.1-2
Conference	2013	Packaged AlGaN/GaN HEMT with 100 W Output Power at 3 GHz Jong-Won Lim 한국 반도체 학술 대회 (KCS) 2013, pp.1-2
Conference	2013	Characteristics of 30W AlGaN/GaN HEMT Device for X-Band Applications Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2013, pp.1-2
Journal	2012	Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106	1
Conference	2012	Packaged GaN HEMT Power Bar with 17 W Output Power at 3 GHz Woojin Chang 한국 반도체 학술 대회 (KCS) 2012, pp.1-2
Conference	2012	Characteristics of 6W AlGaN/GaN HEMT device for X-band application Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2012, pp.381-382
Conference	2010	Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987
Journal	2004	The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs Youn Doo Hyeb IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789	15
Journal	2003	High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567	15

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