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Journal
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2025 |
Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs
Jung Hyunwook ETRI Journal, v.권호미정, pp.1-12 |
0 |
원문
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Conference
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2025 |
X-band HPA MMIC using Domestic GaN HEMT Process
Jeong Junhyung 한국전자파학회 종합 학술 대회 (하계) 2025, pp.210-210 |
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Conference
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2025 |
Compact X-band 30W Power Amplifier MMIC using 0.2 um GaN HEMT Technology
Youn Sub Noh International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2025, pp.1440-1442 |
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Conference
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2025 |
Influence of Double-Deck T-gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
Park Jongyul International Microwave Symposium (IMS) 2025, pp.874-877 |
0 |
원문
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Journal
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2025 |
Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging
Junhyung Kim Electronics Letters, v.61, no.1, pp.1-4 |
0 |
원문
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Conference
|
2024 |
A Ku-Band Low-Noise Amplifier MMIC Using 0.15-µm GaN HEMT Technology
Woojin Chang International Symposium on Antennas and Propagation (ISAP) 2024, pp.1-2 |
0 |
원문
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Conference
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2024 |
Optimization of GaN HEMT geometry for High Performance RF Application
Jung Hyunwook International Workshop on Nitride Semiconductors (IWN) 2024, pp.1-2 |
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Conference
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2024 |
Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs
Jung Hyunwook International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444 |
0 |
원문
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Conference
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2024 |
0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band
Junhyung Jeong International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457 |
0 |
원문
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Journal
|
2024 |
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors
Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8 |
0 |
원문
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Conference
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2024 |
Enhancing Ohmic Contacts in GaN HEMT through Optimization of Ramp-up Rate in Annealing Process
Junhyung Kim International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1104-1105 |
0 |
원문
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Conference
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2024 |
Electrical characteristics of regrown AlGaN/GaN HEMT for implementation of current aperture vertical electron transistors
Kwak Hyeontak 한국LED·광전자학회 학술대회 2024, pp.1-1 |
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Conference
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2024 |
X-band HPA MMIC using The ETRI 0.15μm GaN HEMT Process
Junhyung Jeong 한국전자파학회 종합 학술 대회 (하계) 2024, pp.277-277 |
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Conference
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2024 |
GaN HEMT 소자의 게이트 열처리 공정 유무에 따른 DC 특성 분석
Junhyung Kim 한국전자파학회 종합 학술 대회 (하계) 2024, pp.693-693 |
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Conference
|
2024 |
A 15-W X-Band Power Amplifier MMIC Using 0.15-μm GaN HEMT Technology
Woojin Chang 대한전자공학회 학술 대회 (하계) 2024, pp.521-524 |
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Journal
|
2024 |
X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling
Junhyung Jeong Electronics Letters, v.60, no.10, pp.1-3 |
1 |
원문
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Journal
|
2024 |
Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
Jung Hyunwook Materials Science in Semiconductor Processing, v.170, pp.1-5 |
3 |
원문
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Conference
|
2024 |
The Impact of T-Gate Head Size on Radiation Tolerance in GaN HEMTs
Sungjae Chang 한국반도체 학술대회 (KCS) 2024, pp.397-397 |
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Journal
|
2023 |
Theoretical and Experimental Analysis of Reversed Uneven Power Splitting Technique in GaN MMIC Doherty Power Amplifiers
Kim Cheol Ho IEEE Access, v.11, pp.126098-126109 |
1 |
원문
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Conference
|
2023 |
Novel T-Shaped Gate Structure of AlGaN/GaN HEMTs on Si for RF Application
Jung Hyunwook The Electrochemical Society (ECS) Meeting 2023, pp.1-1 |
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Conference
|
2023 |
Ku-Band 35W Power Amplifier MMIC Using 0.15 µm GaN HEMT Technology
Youn Sub Noh PhotonIcs and Electromagnetics Research Symposium (PIERS) 2023, pp.794-797 |
2 |
원문
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Conference
|
2022 |
InAlGaN/GaN HEMTs with over cut-off frequency of 160 GHz
Sungjae Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
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|
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Conference
|
2022 |
Effect of T-gate Structure on RF Characteristic in AlGaN/GaN HEMTs
Jung Hyunwook International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
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|
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Conference
|
2022 |
Ku-band SPDT Switch MMIC Design Using 0.2um GaN HEMT Process
Youn Sub Noh 한국전자파학회 종합 학술 대회 (동계) 2022, pp.354-354 |
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Journal
|
2021 |
Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
문석호 ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592 |
20 |
원문
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Conference
|
2021 |
Design of A Ka-Band High Efficiency Power Amplifier MMIC Based on GaN HEMT Technology for 5G Base Station
An Hyunbe 한국전자파학회 종합 학술 대회 (하계) 2021, pp.634-635 |
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Conference
|
2021 |
Analysis of Temperature Characteristics of Gate Channel by DC Bias Conditions for GaN Large-Sized HEMT Modeling
Woojin Chang 대한전자공학회 학술 대회 (하계) 2021, pp.315-319 |
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Conference
|
2021 |
Fabrication and Characteristics of InAlGaN/GaN HEMT
Jung Hyunwook 대한전자공학회 학술 대회 (하계) 2021, pp.223-225 |
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Journal
|
2021 |
Technical Trends in GaN RF Electronic Device and Integrated Circuits for 5G Mobile Telecommunication
Jongmin Lee 전자통신동향분석, v.36, no.3, pp.53-64 |
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원문
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Conference
|
2021 |
X-band 20W Power Amplifier MMIC Developement Using 0.2um GaH HEMT Process
Youn Sub Noh 통신 정보 합동 학술 대회 (JCCI) 2021, pp.1-1 |
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Conference
|
2021 |
Broadband SPDT Switch MMIC Development Using 0.2um GaN HEMT Process
Youn Sub Noh 한국전자파학회 종합 학술 대회 (동계) 2021, pp.139-139 |
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Conference
|
2020 |
Characteristics of AlGaN/GaN HEMT with Selective Internal Inactive Area
Jongmin Lee 대한전자공학회 학술 대회 (하계) 2020, pp.488-489 |
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|
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Conference
|
2020 |
Frequency characteristics change according to the source and drain spacing of AlGaN / GaN HEMT device
Kang Soo Cheol 한국전자파학회 종합 학술 대회 (하계) 2020, pp.543-543 |
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|
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Conference
|
2020 |
Ohmic Contacts with Recess-etched and TMAH-treated Nanometer-scale Patterns for Improved Performance and Reliability in AlGaN/GaN HEMTs
Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2020, pp.790-790 |
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|
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Journal
|
2020 |
Fabrication of Multi-Fin-Gate GaN HEMTs Using Honeycomb Shaped Nano-Channel
Kim Jeong Jin 전기전자재료학회논문지, v.33, no.1, pp.16-20 |
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Journal
|
2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200 |
5 |
원문
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Conference
|
2018 |
E-mode GaN HEMT Devices and PA MMICs for 5G Mobile Handsets
Kim Seong-Il International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2018, pp.255-255 |
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|
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Journal
|
2018 |
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure
곽현탁 Applied Sciences, v.8, no.6, pp.1-14 |
29 |
원문
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Conference
|
2018 |
28GHz MMIC Power Amplifier based on 0.15um GaN HEMT Technology
Dong Min Kang 한국 반도체 학술 대회 (KCS) 2018, pp.1-1 |
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|
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Conference
|
2018 |
Modeling and MMIC design of GaN HEMT device with internal back-side via
Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2018, pp.634-634 |
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|
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Conference
|
2018 |
Breakdown and Power Characteristics of GaN HEMTs with a Variation of Device Dimensions for S-band Applications
Jongmin Lee 한국 반도체 학술 대회 (KCS) 2018, pp.667-667 |
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|
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Conference
|
2018 |
Fabrication and Characteristics of GaN HEMT on SiC Device with Internal Backside Via-hole in Active Region for MMIC Applications
Min Byoung-Gue 한국 반도체 학술 대회 (KCS) 2018, pp.663-663 |
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Journal
|
2017 |
6-GHz-to-18-GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance
Shin Dong Hwan ETRI Journal, v.39, no.5, pp.737-745 |
14 |
원문
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Journal
|
2017 |
A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology
Shin Dong Hwan Journal of Electromagnetic Engineering and Science, v.17, no.4, pp.178-180 |
5 |
원문
|
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Conference
|
2017 |
Development of a 0.15 μm GaN HEMT MMIC Process
Hae Cheon Kim Asia-Pacific Workshop on Widegap Semiconductors (APWS) 2017, pp.1-2 |
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Journal
|
2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
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Journal
|
2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369 |
8 |
원문
|
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Conference
|
2017 |
내부 BVIA가 있는 GaN HEMT 소자 특성 및 모델링
Kim Seong-Il 대한전자공학회 RF/아날로그 회로 워크숍 2017, pp.397-398 |
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|
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Conference
|
2017 |
Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate
Sungjae Chang International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89 |
4 |
원문
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Conference
|
2017 |
X-Band GaN MMIC Power Amplifier for the SSPA of a SAR System
Shin Dong Hwan International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.93-95 |
27 |
원문
|
|
Conference
|
2017 |
DC and RF Characterization of AlGaN/GaN HEMTs Devices Fabricated Using Digital Gate Recessing
Hyung Sup Yoon 한국전기전자재료학회 학술 대회 (하계) 2017, pp.1-1 |
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|
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Conference
|
2017 |
GaN HEMT Device Modeling and MMIC for Ka-band Applications
Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2017, pp.1-1 |
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Journal
|
2017 |
High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161 |
15 |
원문
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Journal
|
2017 |
ETRI 0.25 μm GaN MMIC Process and X-Band Power Amplifier MMIC
Lee Sang-Heung 한국전자파학회논문지, v.28, no.1, pp.1-9 |
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원문
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Journal
|
2016 |
Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 |
29 |
원문
|
|
Journal
|
2016 |
Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire
Sungjae Chang ECS Journal of Solid State Science and Technology, v.5, no.12, pp.N102-N107 |
6 |
원문
|
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Conference
|
2016 |
GaN HEMT 모델링 및 전력 증폭기 MMIC 설계
Kim Seong-Il 대한전자공학회 RF/아날로그 회로 워크숍 2016, pp.590-591 |
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|
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Conference
|
2016 |
Surface Treatment for Recessed Gate and its Effects on the Performance of Enhancement-mode AlGaN/GaN HEMTs
Jae Won Do International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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|
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Conference
|
2016 |
Backside Process of AlGaN/GaN HEMT on SiC with Optimized Via-Hole Etching Conditions
Min Byoung-Gue International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
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Conference
|
2016 |
Characterization of 0.18 μm Gate-Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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|
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Conference
|
2016 |
Investgation of GaN Channel Quality on the Device Properties in AIGaN/GaN HEMTs
Sungjae Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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|
|
Conference
|
2016 |
A 16 Watt X-Band GaN High Power Amplifier MMIC for Phased Array Applications
Youn Sub Noh International Conference on Microwave and Millimeter Wave Technology (ICMMT) 2016, pp.1-3 |
7 |
원문
|
|
Conference
|
2016 |
X-band 3 W and 6 W Power Amplifier MMICs using ETRI 0.25 μm GaN HEMT
Lee Sang-Heung 대한전자공학회 종합 학술 대회 (하계) 2016, pp.1-3 |
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|
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Conference
|
2016 |
ETRI 0.25 μm GaN HEMT 공정을 이용한 X-대역 3 W 및 C-대역 5 W 전력 증폭기 MMIC
Lee Sang-Heung 한국전자파학회 종합 학술 대회 (하계) 2016, pp.168-169 |
|
|
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Conference
|
2016 |
GaN HEMT Modeling for X-band Applications
Kim Seong-Il 대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560 |
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|
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Conference
|
2016 |
The Characterization of High Power Density 0.15 μm AlGaN/GaN HEMTs for Their MMIC
Hae Cheon Kim Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) 2016, pp.W17-W18 |
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|
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Conference
|
2016 |
A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT
Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
|
|
|
Conference
|
2016 |
X-band 5W AlGaN/GaN HEMT Power MMICs
Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
|
|
|
Conference
|
2016 |
Advanced Backend Processing and its Effects on the Performance and the Yield of GaN HEMT Deviceson SiC Substrate
Jae Won Do 한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
|
|
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Conference
|
2016 |
Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate
Jongmin Lee 한국 반도체 학술 대회 (KCS) 2016, pp.1-2 |
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|
|
Journal
|
2016 |
0.25 μm AlGaN/GaN HEMT Devices and 9 GHz Power Amplifier
Dong Min Kang 한국전자파학회논문지, v.27, no.1, pp.76-79 |
|
원문
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|
Journal
|
2015 |
Asymmetric Broadband Doherty Power Amplifier Using GaN MMIC for Femto-Cell Base-Station
지승훈 IEEE Transactions on Microwave Theory and Techniques, v.63, no.9, pp.2802-2810 |
57 |
원문
|
|
Conference
|
2015 |
GaN High Power Amplifier MMIC for 30W Compact Doherty Amplifier for LTE Active Antenna System
Chang Dong Pil European Microwave Integrated Circuits Conference (EuMIC) 2015, pp.265-268 |
7 |
원문
|
|
Journal
|
2015 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Kyu Jun Cho Journal of the Korean Physical Society, v.67, no.4, pp.682-686 |
3 |
원문
|
|
Journal
|
2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
원문
|
|
Journal
|
2015 |
Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole
Min Byoung-Gue Journal of the Korean Physical Society, v.67, no.4, pp.718-722 |
2 |
원문
|
|
Conference
|
2015 |
Variations of DC Properties of AlGaN/GaN HEMT by Process Enhancement of Gate Recess
Min Byoung-Gue 대한전자공학회 종합 학술 대회 (하계) 2015, pp.192-195 |
|
|
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Conference
|
2015 |
X-Band Power Amplifier Using 40W GaN-on-SiC HEMT
Dong Min Kang 대한전자공학회 종합 학술 대회 (하계) 2015, pp.231-234 |
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|
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Conference
|
2015 |
Wide Head T-Shaped Gate Process for Low-Noise AlGaN/GaN HEMTs
Hyung Sup Yoon International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2015, pp.363-366 |
|
|
|
Conference
|
2015 |
GaN High Power Devices and Their Applications
Mun Jae Kyoung The Electrochemical Society (ECS) Meeting 2015 (ECS Transactions 66), v.66, no.1, pp.79-83 |
0 |
원문
|
|
Journal
|
2015 |
GaN HEMT MMIC Doherty Power Amplifier with High Gain and High PAE
박윤식 IEEE Microwave and Wireless Components Letters, v.25, no.3, pp.187-189 |
22 |
원문
|
|
Conference
|
2015 |
X-band 40W Pulsed Power Amplifier using 0.2um AlGaN/GaN HEMT
Dong Min Kang 한국 반도체 학술 대회 (KCS) 2015, pp.192-192 |
|
|
|
Conference
|
2015 |
Low-Noise Microwave Performance of AlGaN/GaN HEMTs on SiC with Wide Head T-Shaped Gate
Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2015, pp.191-191 |
|
|
|
Journal
|
2015 |
X‐band 100 W solid‐state power amplifier using a 0.25 μM GaN HEMT technology
Dong Min Kang Microwave and Optical Technology Letters, v.57, no.1, pp.212-216 |
6 |
원문
|
|
Conference
|
2014 |
Fabrication of GaN HEMT on SiC with Taper-Shaped Backside Via-Hole
Min Byoung-Gue International Symposium Physics of Semiconductors and Applications (ISPSA) 2014, pp.80-80 |
|
|
|
Conference
|
2014 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Kyu Jun Cho International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.131-131 |
|
|
|
Conference
|
2014 |
100W Pulsed SSPA Using 25W AlGaN/GaN HEMT Technology at 9.2 - 9.5 GHz
Dong Min Kang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.75-75 |
|
|
|
Conference
|
2014 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Recessed Gate by ICP Etching of BCl3/SF6
Hyung Sup Yoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.81-81 |
|
|
|
Journal
|
2014 |
Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests
Jongmin Lee Journal of the Korean Physical Society, v.64, no.10, pp.1446-1450 |
3 |
원문
|
|
Conference
|
2014 |
Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts
Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1 |
|
|
|
Journal
|
2014 |
X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology
Woojin Chang Microwave and Optical Technology Letters, v.56, no.1, pp.96-99 |
9 |
원문
|
|
Conference
|
2013 |
GaN MMIC Broadband Doherty Power Amplifier
지승훈 Asia-Pacific Microwave Conference (APMC) 2013, pp.603-605 |
9 |
원문
|
|
Conference
|
2013 |
X-Band Low Noise Amplifier MMIC Using AlGaN/GaN HEMT Technology on SiC Substrate
Woojin Chang Asia-Pacific Microwave Conference (APMC) 2013, pp.681-684 |
8 |
원문
|
|
Conference
|
2013 |
Packaged AlGaN/GaN HEMT with 100 W Output Power at 3 GHz
Jong-Won Lim 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Conference
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2013 |
Characteristics of 30W AlGaN/GaN HEMT Device for X-Band Applications
Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Conference
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2013 |
고온 저장 시험에 의한 GaN HEMT 소자의 특성 변화
Jongmin Lee 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Journal
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2012 |
Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106 |
1 |
원문
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Conference
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2012 |
Characteristics of 6W AlGaN/GaN HEMT device for X-band application
Kim Seong-Il 한국 반도체 학술 대회 (KCS) 2012, pp.381-382 |
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Conference
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2012 |
Packaged GaN HEMT Power Bar with 17 W Output Power at 3 GHz
Woojin Chang 한국 반도체 학술 대회 (KCS) 2012, pp.1-2 |
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Conference
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2010 |
Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications
Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987 |
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Journal
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2004 |
The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs
Youn Doo Hyeb IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789 |
15 |
원문
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Journal
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2003 |
High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz
Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567 |
15 |
원문
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