Subjects : gate dielectric

Articles (98)
Patents (0)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2024	Rapid activation of a solution-processed aluminum oxide gate dielectric through intense pulsed light irradiation 오연화 RSC Advances, v.14, no.50, pp.37438-37444	1
Journal	2024	Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography Sung Chihun IEEE Electron Device Letters, v.45, no.6, pp.1020-1023	1
Journal	2024	Replicating the Bright-Light Therapy of Seasonal Affective Disorder Using Dual-Gate Dielectric Synaptic Transistors: An Exploration of Neuromorphic Computing Approaches Jaehee Lee ACS APPLIED ELECTRONIC MATERIALS, v.6, no.3, pp.1904-1911	1
Journal	2023	Novel approach for implementing ternary value logic devices showing negative differential transconductance characteristics by Fowler–Nordheim tunneling Kim Jieun Materials Science in Semiconductor Processing, v.164, pp.1-6	1
Journal	2022	Photo-Synaptic Oxide Transistors with Al2O3/SiOx Stacked Gate Dielectric Exhibiting 1024 Conduction States with Good Linearity Lim Jungwook Advanced Electronic Materials, v.8, no.10, pp.1-5	6
Journal	2022	Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors Kim Jieun Advanced Electronic Materials, v.8, no.4, pp.1-8	6
Journal	2021	Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications 권혁진 Advanced Functional Materials, v.31, no.10, pp.1-15	36
Journal	2021	Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications Heqing Ye Advanced Functional Materials, v.31, no.10, pp.1-15	36
Journal	2020	Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Sungjae Chang Nanomaterials, v.10, no.11, pp.1-11	11
Journal	2019	Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect 황인태 Applied Sciences, v.9, no.17, pp.1-13	6
Journal	2019	Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors Sooji Nam Applied Sciences, v.9, no.1, pp.1-8	3
Conference	2018	Top Gate MoSe2 FET with Low Damage Deposition of Al2O3 Gate Dielectric 채현준 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2018, pp.1-1
Journal	2018	Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface Kim Tae Yoon ACS Applied Materials & Interfaces, v.10, no.31, pp.26405-26412	14
Journal	2018	Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric Maruf A. Bhuiyan IEEE Transactions on Nuclear Science, v.65, no.1, pp.46-52	22
Journal	2018	Ion-Gel-Gated Graphene Optical Modulator with Hysteretic Behavior Jin Tae Kim ACS Applied Materials & Interfaces, v.10, no.2, pp.1836-1845	38
Journal	2017	A Study on N2O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor Doohyung Cho Journal of the Korean Physical Society, v.71, no.3, pp.150-155	5
Journal	2017	Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs Sungjae Chang IEEE Electron Device Letters, v.38, no.4, pp.441-444	14
Conference	2016	Total Ionizing Dose Effects on GaN-based HEMTs and MOSHEMTs: Effects of Channel Thickness and Epitaxial MgCaO as Gate Dielectric M. Bhuiyan Semiconductor Interface Specialists Conference (SISC) 2016, pp.1-2
Journal	2016	Improved stability of electrical properties of nitrogen-added Al 2 O 3 films grown by PEALD as gate dielectric Lee Da Jung Materials Research Bulletin, v.83, pp.597-602	10
Conference	2016	Rapid Activation of Solution-processed Aluminium Oxide Gate Dielectric Using Flash Lamp Annealing Yeonwha Oh MRS Meeting 2016 (Fall), pp.1-1
Journal	2016	InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors With High Mobility and High Uniformity Ji Hun Choi IEEE Electron Device Letters, v.37, no.10, pp.1295-1298	36
Journal	2016	Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET Hokyun Ahn ETRI Journal, v.38, no.4, pp.675-684	5
Conference	2016	Threshold Voltage Shift of 0.2 μm AlGaN/GaN MISHFET with Fluorinated Gate Dielectric Hokyun Ahn International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
Journal	2016	Photo-patternable High-k ZrOx Dielectrics Prepared using Zirconium Acrylate for Low-voltage-operating Organic Complementary Inverters 정용진 Organic Electronics, v.33, pp.40-47	24
Conference	2015	Double-Channel InZnO/AlSnZnInO Thin-Film Transistors with Ultra High Mobility Choi Ji Hoon International Display Workshops (IDW) 2015, pp.189-190	1
Journal	2015	Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7513-7517	4
Journal	2015	Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7526-7530	9
Conference	2015	The Highly Stable InGaZnO TFTs Deposited by High Density Plasma Sputtering Cho Sung Haeng International Thin-Film Transistor Conference (ITC) 2015, pp.17-18
Journal	2014	Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures 이관형 Advanced Functional Materials, v.24, no.32, pp.5157-5163	71
Journal	2014	Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures Yu Young-Jun Advanced Functional Materials, v.24, no.32, pp.5157-5163	71
Journal	2014	Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures 강석주 Advanced Functional Materials, v.24, no.32, pp.5157-5163	71
Journal	2014	Influence of Gate Dielectric/Channel Interface Engineering on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Cho Sung Haeng Physica Status Solidi (A), v.211, no.9, pp.2126-2133	21
Journal	2014	Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate Hokyun Ahn Solid-State Electronics, v.95, pp.42-45	18
Journal	2013	Organic–inorganic hybrid gate dielectric for solution-processed ZnO thin film transistors Ji-Young Oh Journal of Vacuum Science and Technology B, v.31, no.5, pp.1-6	10
Journal	2013	Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures Bae Sung-Bum Microelectronic Engineering, v.109, pp.10-12	6
Journal	2013	Low-Voltage, High Speed Inkjet-Printed Flexible Complementary Polymer Electronic Circuits 백강준 Organic Electronics, v.14, no.5, pp.1407-1418	64
Journal	2012	High‐Performance Top‐Gated Organic Field‐Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory Kang-Jun Baeg Advanced Functional Materials, v.22, no.14, pp.2915-2926	204
Journal	2012	A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556	2
Journal	2012	High Performance of Ultralow Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate 박동진 Solid-State Electronics, v.75, pp.97-101	2
Journal	2011	Polymer Dielectrics and Orthogonal Solvent Effects for High-Performance Inkjet-Printed Top-Gated P-Channel Polymer Field-Effect Transistors Kang-Jun Baeg ETRI Journal, v.33, no.6, pp.887-896	30
Journal	2011	Moisture-Induced Hysteresis of Pentacene Thin Film Transistors with Cross-Linked Poly(4-vinylphenol) Gate Dielectrics Kim Junho Journal of Nanoscience and Nanotechnology, v.11, no.5, pp.4577-4580	0
Journal	2011	Low-voltage-operated Top-gate Polymer Thin-film Transistors with High-capacitance P(VDF-TrFE)/PVDF-blended Dielectrics Soon-Won Jung Current Applied Physics, v.11, no.3 Suppl., pp.S213-S218	44
Journal	2011	Improved Performance Uniformity of Inkjet Printed N-channel Organic Field-effect Transistors and Complementary Inverters Kang-Jun Baeg Organic Electronics, v.12, no.4, pp.634-640	66
Journal	2011	Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array Kim Byeonghoon IEEE Electron Device Letters, v.32, no.3, pp.324-326	29
Journal	2011	High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductors Kang-Jun Baeg Journal of Polymer Science Part B : Polymer Physics, v.49, no.1, pp.62-67	103
Journal	2010	Effects of N2 and NH3 Remote Plasma Nitridation on the Structural and Electrical Characteristics of the HfO2 Gate Dielectrics Park Kun Sik Applied Surface Science, v.257, no.4, pp.1347-1350	35
Journal	2010	Low-Voltage-Operated Top-Gate Polymer Thin-Film Transistors with high Capacitance Poly(Vinylidene Fluoride-Trifluoroethylene)/Poly(Methyl Methacrylate) Dielectrics Soon-Won Jung Journal of Applied Physics, v.108, no.10	45
Journal	2010	Fabrication of Self-Aligned TFTs with a Ultra-Low Temperature Polycrystalline Silicon Process on Metal Foils Jaehyun Moon Solid-State Electronics, v.54, no.11, pp.1326-1331	2
Journal	2010	High Mobility Top-Gated Poly(3-hexylthiophene) Field-Effect Transistors with High Work-Function Pt Electrodes 백강준 Thin Solid Films, v.518, no.14, pp.4024-4029	56
Journal	2010	In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO2 Films 최철종 Materials Transactions, v.51, no.4, pp.793-798	3
Journal	2010	Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer Soon-Won Jung Current Applied Physics, v.10, no.1 SUPPL., pp.e58-e61	31
Journal	2009	Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics 이정민 Applied Physics Letters, v.94, no.22, pp.1-4	109
Conference	2009	Organic Thin Film Transistors with Cross-Linked PVP Gate Dielectrics by Using Photo-Initiator and PMF Yun Ho Jin International Meeting on Information Display (IMID) 2009, pp.1-3
Journal	2009	Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With Al2O3 and Al2O3/SiNx Gate Dielectrics 조인탁 IEEE Electron Device Letters, v.30, no.8, pp.828-830	45
Conference	2009	Hysteresis Induced by UV/ozone Surface Treatment in Pentacene TFT with Acrylic Polymer Gate Dielectric Koo Jae Bon KJF International Conference on Organic Materials for Electronics and Photonics (KJF-ICOMEP) 2009, pp.1-2
Journal	2009	Flexible Organic Thin-Film Transistors for Photodetectors 권재홍 Journal of the Korean Physical Society, v.55, no.1, pp.72-75	9
Journal	2009	Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications 백강준 Solid-State Electronics, v.53, no.11, pp.1165-1168	23
Journal	2009	Effect of UV/ozone Treatment on Hysteresis of Pentacene Thin-Film Transistor with Polymer Gate Dielectric Koo Jae Bon Solid-State Electronics, v.53, no.6, pp.621-625	39
Journal	2009	Polaron Localization at Interfaces in High‐Mobility Microcrystalline Conjugated Polymers N. Zhao Advanced Materials, v.21, no.37, pp.3759-3763	97
Journal	2009	Characteristics of Metal-Oxide-Semiconductor (MOS) Device with Er Metal Gate on SiO2 Film 최철종 Microelectronics Reliability, v.49, no.4, pp.463-465	2
Journal	2009	Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors Yong-Young Noh Organic Electronics, v.10, no.1, pp.174-180	121
Journal	2009	Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain Yang Jong-Heon Thin Solid Films, v.517, no.5, pp.1825-1828	5
Journal	2008	Properties of Ferroelectric P(VDF-TrFE) 70/30 Copolymer Films as a Gate Dielectric Jung Soonwon Integrated Ferroelectrics, v.100, no.1, pp.198-205	23
Conference	2008	Fabrication of High Performance Pentacene TFTs using TX100 in PVP Gate Dielectric Song Kichul International Display Workshops (IDW) 2008, pp.715-716
Journal	2008	Polarity Effects of Polymer Gate Electrets on Non‐Volatile Organic Field‐Effect Transistor Memory Back Gangjoon Advanced Functional Materials, v.18, no.22, pp.3678-3685	264
Journal	2008	Electrostatic Modification of Infrared Response in Gated Structures based on VO2 M. M. Qazilbash Applied Physics Letters, v.92, no.24, pp.1-3	65
Journal	2008	High-gain and Low-hysteresis Properties of Organic Inverters with an UV-photo Patternable Gate Dielectrics Lim Sangchul Thin Solid Films, v.516, no.12, pp.4330-4333	5
Journal	2008	A Two-Layer Stacked Polycrystalline Silicon Thin Film Transistor Complementary Metal Oxide Semiconductor Inverters Using Laser Crystallized Channel with High-k and Metal Gate on Si Oh Soon-Young Japanese Journal of Applied Physics, v.47, no.4, pp.3091-3094	7
Journal	2008	Organic Field-effect Transistors with Thermal-cured Polyacrylate Gate Dielectric Films Gi Heon Kim Thin Solid Films, v.516, no.7, pp.1574-1577	4
Conference	2007	Pentacene Thin-film Transistors with Thin Polymer Gate Dielectric and Silver Electrode Kim Junho International Display Workshops (IDW) 2007, pp.2005-2006
Conference	2007	Enhanced Pentacene OTFT Properties with Surface Treatment on PSPI Gate Dielectric Do Lee-Mi International Display Workshops (IDW) 2007, pp.2013-2014
Journal	2007	Er and Pt Gate Electrodes Formed on SiO2 Gate Dielectrics Choi Chel-Jong Electrochemical and Solid-State Letters, v.11, no.2, pp.H22-H25	0
Journal	2007	Novel Organic Inverters with Dual-Gate Pentacene Thin-Film Transistor Koo Jae Bon Organic Electronics, v.8, no.5, pp.552-558	58
Journal	2007	Characteristics of Pentacene Thin Film Transistor with Al2O3 Gate Dielectrics on Plastic Substrate Lim Jungwook Electrochemical and Solid-State Letters, v.10, no.10, pp.J36-J38	8
Journal	2007	Device Characteristics of Pentacene Dual-Gate Organic Thin-Film Transistor Koo Jae Bon Japanese Journal of Applied Physics, v.46, no.8A, pp.5062-5066
Journal	2007	Electric Characteristics of Organic Thin-film Transistors and Logic Circuits with a Ferroelectric Gate Insulator Yong Suk Yang Thin Solid Films, v.515, no.19, pp.7688-7691	2
Journal	2007	Electrical and Structural Properties of High-k Er-silicate Gate Dielectric Formed by Interfacial Reaction between Er and SiO2 Films Choi Chel-Jong Applied Physics Letters, v.91, no.1, pp.1-3	17
Journal	2007	Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition Sun Jin Yun Electrochemical and Solid-State Letters, v.10, no.3, pp.H90-H93	11
Journal	2007	Hysteresis and Threshold Voltage Shift of Pentacene Thin-film Transistors and Inverters with Al2O3 Gate Dielectric Koo Jae Bon Applied Physics Letters, v.90, no.13, pp.1-3	58
Journal	2007	Pentacene Thin-film Transistors and Inverters with Plasma-enhanced Atomic-layer-deposited Al2O3 Gate Dielectric Koo Jae Bon Thin Solid Films, v.515, no.5, pp.3132-3137	26
Journal	2006	Threshold voltage control of pentacene thin‐film transistor with dual‐gate structure Koo Jae Bon Journal of Information Display, v.7, no.3, pp.27-30	7
Journal	2006	Low-Voltage and High-Gain Pentacene Inverters with Plasma-Enhanced Atomic-Layer-Deposited Gate Dielectrics Koo Jae Bon Applied Physics Letters, v.89, no.3, pp.1-3	21
Conference	2006	Enhanced Mobility of New Thieno [3,2] Thienophen Oligomer TFTs with Al2O3 Gate Dielectrics Do Lee-Mi International Display Workshops (IDW) 2006, pp.1517-1518
Journal	2006	Performance Improvement of Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate by Plasma Oxidation of Polycrystalline Si Surface Kim Yong Hae IEEE Electron Device Letters, v.27, no.11, pp.896-898	10
Journal	2006	Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure Koo Jae Bon Electrochemical and Solid-State Letters, v.9, no.11, pp.G320-G322	9
Journal	2006	Plastic-Based Organic Thin-Film Transistors with Thermally Cured Polymeric Gate Dielectrics Gi Heon Kim Journal of the Korean Physical Society, v.49, no.3, pp.1239-1242
Journal	2006	Rare-Earth Gate Oxides for GaAs MOSFET Application 권광호 Applied Surface Science, v.252, no.21, pp.7624-7630	4
Conference	2006	Plasma Oxidation Effect on Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate Kim Yong Hae International Meeting on Information Display 2006, pp.1122-1125
Conference	2006	Plasma-Enhanced Atomic Layer Deposition of ZrO2 film and the Performance of Pentacene thin film Transistor with ZrO2 Gate Dielectric Layer Sun Jin Yun International Conference on Atomic Layer Deposition Workshop (ALD) 2006, pp.1-1
Conference	2006	The Organic thin film Transistor with PEALD Grown Alumina Gate Dielectric Lim Jungwook International Conference on Atomic Layer Deposition Workshop (ALD) 2006, pp.1-1
Conference	2006	Organic Field-Effect Transistors with Thermal-Cured Polyacrylate Gate Dielectric Films Gi Heon Kim MRS Meeting 2006 (Spring), pp.1-1
Conference	2006	Low-Voltage Pentacene Transistors and Inverters with Plasma-Enhanced Atomic Layer Deposited Gate Dielectrics Koo Jae Bon MRS Meeting 2006 (Spring), pp.1-14
Conference	2006	Self-Aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate Jaehyun Moon Materials Research Society (MRS) Meeting 2006 (Spring), pp.1-6
Conference	2005	Fabrication of High Performance Low Temperature Poly-Si(LTPS) on Flexible Metal Foil Park Dong Jin International Display Workshops in Conjunction with Asia Display (IDW/AD) 2005, pp.1-4
Conference	2005	Plastic-Based Organic Thin-Film Transistors with Thermal-Cured Polymeric Gate Dielectrics Gi Heon Kim International Conference on Advanced Materials and Devices (ICAMD) 2006, pp.1-12
Journal	2005	Flexible Organic LED and Organic Thin-Film Transistor Taehyoung Zyung Proceedings of the IEEE, v.93, no.7, pp.1265-1272	35
Journal	2005	Surface-Treatment Effects on Organic Thin-Film Transistors Lim Sang Chul Synthetic Metals, v.148, no.1, pp.75-79	208
Journal	2004	고성능 저온 폴리실리콘 소자 특성 Kim Yong Hae IEEE Electron Device Letters, v.25, no.8, pp.550-552	27

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