Subjects : Atomic Layer Deposition

Articles (95)
Patents (0)
R&D Reports (0)

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Type	Year	Title	Cited
Journal	2024	Wide process temperature of atomic layer deposition for In2 O3 thin-film transistors using novel indium precursor (N,N′-di-tert butylacetimidamido)dimethyllindium Juhun Lee Nanotechnology, v.35, no.37, pp.1-9	1
Journal	2024	Benzylphosphonic acid treated ultra-thin ALD-InOx for long term device stability Juhun Lee Journal of Materials Chemistry C, v.12, no.31, pp.11928-11937	1
Journal	2024	Characteristics of Ultrathin Indium Oxide Thin‐Film Transistors with Diverse Channel Lengths Fabricated by Atomic Layer Deposition Juhun Lee Physica Status Solidi (B): Basic Research, v.261, no.7, pp.1-6	2
Conference	2024	DBADMI(N,N’-di-tert-butylacetimidamido)dimethyllindium) as a Novel Liquid Indium Precursor for Atomic Layer Deposition and its use in In2O3 Thin-Film Transistors Juhun Lee International Thin-Film Transistor Conference (ITC) 2024, pp.1-2
Journal	2023	Experimental Robust Spontaneous Synchronizations in Coupled NbOx Oscillation Neurons for Unconventional Computing 김현욱 IEEE Transactions on Electron Devices, v.70, no.12, pp.6699-6702	6
Conference	2023	Importance of contact resistance on the device mobility of ultra-thin indium oxide formed by atomic layer deposition Juhun Lee Compound Semiconductor Week (CSW) 2023, pp.611-612
Conference	2023	Optical and electrical stability of single-layer Indium oxide thin-film transistors fabricated using atomic layer deposition with a novel indium precursor(SBIP-03) Juhun Lee Materials Research Society (MRS) Meeting 2023 (Spring), pp.1-1
Conference	2022	Characteristics of thin-body indium oxide thin-film transistors with diverse channel length fabricated by atomic layer deposition Juhun Lee International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2022, pp.1-1
Journal	2022	Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors Kim Jieun Advanced Electronic Materials, v.8, no.4, pp.1-8	6
Journal	2021	Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction Lim Jungwook Materials, v.14, no.24, pp.1-8	4
Journal	2021	Organic/Inorganic Hybrid Thin-Film Encapsulation Using Inkjet Printing and PEALD for Industrial Large-Area Process Suitability and Flexible OLED Application Kwon Byoung-Hwa ACS Applied Materials & Interfaces, v.13, no.46, pp.54621-55766	36
Journal	2021	Optimizing Oxide Mixing Ratio for Achieving Energy‐Efficient Oxide Thin‐Film Transistors Jaehyun Moon Physica Status Solidi (A) - Applications and Materials Science, v.218, no.16, pp.1-5	1
Journal	2021	Photoinduced Synaptic Behavior of InxTiyO Thin Film Transistors Lim Jungwook Advanced Electronic Materials, v.7, no.4, pp.1-7	10
Journal	2021	Effects of Moisture-Proof Back Passivation Layers of Al2O3 and AlxTi1-xOy Films on Efficiency Improvement and Color Modulation in Transparent a-Si:H Solar Cells Kim Jieun ACS Applied Materials & Interfaces, v.13, no.4, pp.4968-4974	13
Journal	2020	Eco-friendly Colorful Cu(In,Ga)Se2 Thin-film Solar Cells Technology Chung Yong-Duck 세라미스트, v.23, no.4, pp.389-406
Journal	2019	Film Thickness-dependent Ferroelectric Polarization Switching Dynamics of Undoped HfO2 Thin Films Prepared by Atomic Layer Deposition 최세나 Ceramics International, v.45, no.17, pp.22642-22648	29
Conference	2019	Development of Inorganic/Organic Thin Film Encapsulation by using Atomic Layer Deposition and Ink-jet Printing Process Kwon Byoung-Hwa International Conference on Advanced Electromaterials (ICAE) 2019, pp.1-1
Journal	2019	All-oxide Thin-film Transistors with Channels of Mixed InOx-ZnOy Formed by Plasma-enhanced Atomic Layer Deposition Process Lee Jeongmu Journal of Vacuum Science and Technology A, v.37, no.6, pp.1-7	11
Journal	2019	Polarization Switching Kinetics of the Ferroelectric Al-doped HfO2 Thin Films Prepared by Atomic Layer Deposition with Different Ozone Doses 윤소정 Journal of Vacuum Science and Technology B, v.37, no.5, pp.1-6	37
Journal	2019	Characterization of Metal-ferroelectric-metal-insulator-semiconductor Structures using Ferroelectric Al-doped HfO2 Thin Films Prepared by Atomic-layer Deposition with Different O3 Doses 나소영 Japanese Journal of Applied Physics, v.58, no.7, pp.1-5	11
Journal	2019	Fab-compatible Nano-lens Array Integration for Optically Efficient Flexible Top-emitting Organic Light-emitting Diodes Park Young Sam Japanese Journal of Applied Physics, v.58, no.SD, pp.1-6	5
Journal	2019	Fab-compatible Nano-lens Array Integration for Optically Efficient Flexible Top-emitting Organic Light-emitting Diodes 권정윤 Japanese Journal of Applied Physics, v.58, no.SD, pp.1-6	5
Journal	2019	Fab-compatible Nano-lens Array Integration for Optically Efficient Flexible Top-emitting Organic Light-emitting Diodes 김제한 Japanese Journal of Applied Physics, v.58, no.SD, pp.1-6	5
Journal	2018	원자층 증착법을 이용한 고이동도 초박막 결정질 인듐 옥사이드 박막 트랜지스터 Lee Jongchan Applied Physics Letters, v.113, no.11, pp.1-5	58
Conference	2018	High Mobility Transparent Thin Film Transistor with 5nm-Indium Oxide by Atomic Layer Deposition Lee Jongchan International Meeting on Information Display (IMID) 2018, pp.535-535
Journal	2018	Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation Sungjae Chang ECS Journal of Solid State Science and Technology, v.7, no.6, pp.86-90	8
Journal	2017	A Single‐Chamber System of Initiated Chemical Vapor Deposition and Atomic Layer Deposition for Fabrication of Organic/Inorganic Multilayer Films 김봉준 Advanced Engineering Materials, v.19, no.6, pp.1-9	25
Journal	2016	Improved stability of electrical properties of nitrogen-added Al 2 O 3 films grown by PEALD as gate dielectric Lee Da Jung Materials Research Bulletin, v.83, pp.597-602	10
Journal	2016	Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET Hokyun Ahn ETRI Journal, v.38, no.4, pp.675-684	5
Conference	2016	Oxide Vertical TFTs for the Application to the Ultra High Resolution Display 염혜인 Society for Information Display (SID) International Symposium 2016, pp.820-822	34
Conference	2015	The Effect of Annealing Treatment on Indium Oxide/Zinc Oxide Heterostructured Thin Films Transistors Grown by Plasma Enhanced Atomic Layer Deposition Lee Hwanjae International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1
Conference	2015	A Study on the Physical and Electrical Properties of Indium Oxide/Zinc Oxide Heterostructured Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition Lee Jeongmu International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1
Conference	2015	Effect of Post-Annealing Temperatures on SnO2/Al2O3 Superlattice Thin Fiim Transistors Grown by Atomic Layer Deposition Lee Hwanjae International Conference on Advanced Electromaterials (ICAE) 2015, pp.1-1
Conference	2015	Growth Characteristics and Electrical Properties of Aluminum Oxide and Tin Oxide Superlattice Thin Films by Atomic Layer Deposition Lee Jeongmu International Conference on Advanced Electromaterials (ICAE) 2015, pp.1-1
Conference	2015	The Effect of Post-Annealing on Bias Stability of InOx/ZnO Superlattice Thin Film Transistors Grown by Plasma Enhanced Atomic Layer Deposition Lee Hwanjae Asian-European International Conference on Plasma Surface Engineering (AEPSE) 2015, pp.1-1
Conference	2015	Growth Characteristics and Electrical Properties of Indium Oxide and Zinc Oxide Superlattice Thin Films by Plasma Enhanced Atomic Layer Deposition Lee Jeongmu Asian-European International Conference on Plasma Surface Engineering (AEPSE) 2015, pp.1-1
Conference	2015	Thermal Conductivity of Thin Film Al2O3 Grown by Atomic Layer Deposition Kim Junsoo European Materials Research Society (E-MRS) Meeting 2015 (Spring), pp.1-1
Journal	2014	A Thin Film Encapsulation Layer Fabricated via Initiated Chemical Vapor Deposition and Atomic Layer Deposition 김봉준 Journal of Applied Polymer Science, v.131, no.24, pp.1-7	23
Conference	2014	Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2
Journal	2014	Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate Hokyun Ahn Solid-State Electronics, v.95, pp.42-45	18
Journal	2014	Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method Hwang Chi-Sun IEEE Electron Device Letters, v.35, no.3, pp.360-362	54
Journal	2013	Fabrication of Ag Nanoparticles Embedded in TiO2 Nanotubes: Using Electrospun Nanofibers for Controlling Plasmonic Effects Jung Mi Hee Chemistry - A European Journal, v.19, no.26, pp.8543-8549	16
Conference	2013	High Mobility Oxide TFT for Large Area High Resolution AMOLED Park Sang-Hee Society for Information Display (SID) International Symposium 2013, pp.18-21	10
Journal	2013	Double-Layered Passivation Film Structure of Al2O3/SiNx for High Mobility Oxide Thin Film Transistors Park Sang-Hee Journal of Vacuum Science and Technology B, v.31, no.2, pp.1-6	30
Conference	2012	Oxygen Vacancy Effect for the Illumination Instability of In-Ga-O Transparent Thin Film Transistors Ryu Hojun International Meeting on Information Display (IMID) 2012, pp.1-2
Conference	2012	Study on the E/D - mode AlGaN/GaN MISFET with Al2O3 gate insulator grown by Atomic Layer Deposition International Confernece on Microelectronics and Plasma Technology (ICMAP) 2012, pp.1-1
Journal	2012	Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation Oh Himchan ETRI Journal, v.34, no.2, pp.280-283	16
Conference	2011	TiO2 Nanotubes Fabricated by Atomic Layer Deposition for Solar Cells 한국진공학회 학술 대회 (하계) 2011, pp.161-161
Journal	2010	Fabrication of Self-Aligned TFTs with a Ultra-Low Temperature Polycrystalline Silicon Process on Metal Foils Jaehyun Moon Solid-State Electronics, v.54, no.11, pp.1326-1331	2
Journal	2010	High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability Yang Shinhyuk IEEE Electron Device Letters, v.31, no.2, pp.144-146	67
Journal	2010	A Low-Temperature-Grown TiO2-Based Device for the Flexible Stacked RRAM Application Hu Young Jeong Nanotechnology, v.21, no.11, pp.1-6	132
Journal	2010	Optical and Electrical Properties of AlxTi1-xO Films Lim Jungwook Journal of the Korean Physical Society, v.56, no.1, pp.96-99	3
Journal	2010	Bipolar Resistive Switching in Amorphous Titanium Oxide Thin Film Hu Young Jeong Physica Status Solidi (RRL), v.4, no.1-2, pp.1-3	60
Journal	2009	Properties of Al₂O₃ Insulating Film Using the ALD Method for Nonvolatile Memory Application Soon-Won Jung 전기학회논문지, v.58, no.12, pp.2420-2424
Journal	2009	Optical and Electrical Properties of TixSi1-xOy Films Lim Jungwook ETRI Journal, v.31, no.6, pp.675-679	10
Journal	2009	Low Voltage Operation of Nonvolatile Ferroelectric Capacitors Using Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer and Thin Al2O3 Insulating Layer Soon-Won Jung Electrochemical and Solid-State Letters, v.12, no.9, pp.H325-H328	12
Conference	2009	Electrical and Optical Properties of AlTiO Films Lim Jungwook 한국반도체 학술 대회 (KCS) 2009, pp.1-2
Journal	2009	Transparent and Photo‐stable ZnO Thin‐film Transistors to Drive an Active Matrix Organic‐Light‐ Emitting‐Diode Display Panel Park Sang-Hee Advanced Materials, v.21, no.6, pp.678-682	338
Journal	2009	Passivation of Bottom-Gate IGZO Thin Film Transistors Cho Doo-Hee Journal of the Korean Physical Society, v.54, no.1, pp.531-534	43
Journal	2009	Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477	1
Journal	2008	Thin-film Passivation by Atomic Layer Deposition for Organic Field-effect Transistors 전하영 Applied Physics Letters, v.93, no.16, pp.1-3	32
Journal	2008	Voltage-Regulating Properties of AlxTi1_xOy Films Exhibiting an Abrupt Current Jump Lim Jungwook Electrochemical and Solid-State Letters, v.11, no.11, pp.G55-G57	0
Journal	2008	Optical AlxTi1-xOy Films Grown by Plasma Enhanced Atomic Layer Deposition Lim Jungwook Japanese Journal of Applied Physics, v.47, no.8, pp.6934-6937	10
Journal	2008	Vanadium Dioxide Films Deposited on Amorphous SiO2- and Al2O3-Coated Si Substrates by Reactive RF-Magnetron Sputter Deposition Sun Jin Yun Japanese Journal of Applied Physics, v.47, no.4, pp.3067-3069	22
Journal	2007	Rapid Vapor-Phase Fabrication of Organic−Inorganic Hybrid Superlattices with Monolayer Precision 이병훈 Journal of the American Chemical Society, v.129, no.51, pp.16034-16041	115
Journal	2007	Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition Park Sang-Hee Electrochemical and Solid-State Letters, v.11, no.1, pp.H10-H14	104
Journal	2007	Characteristics of Al[sub x]Ti[sub 1−x]O[sub y] Films Grown by Plasma-Enhanced Atomic Layer Deposition Lim Jungwook Journal of the Electrochemical Society, v.154, no.11, pp.G239-G243	25
Journal	2007	PEALD 방법으로 증착한 ZrO2/Al2O3 nano-compoiste 박막의 특성 Sun Jin Yun Journal of Nanoscience and Nanotechnology, v.7, no.11, pp.4180-4184
Journal	2007	Characteristics of Pentacene Thin Film Transistor with Al2O3 Gate Dielectrics on Plastic Substrate Lim Jungwook Electrochemical and Solid-State Letters, v.10, no.10, pp.J36-J38	8
Journal	2007	Stress Reduction of Ge2Sb2Te5 Crystallization by Capping Al2O3 Film Grown by PEALD Park Young Sam ECS Transactions, v.11, no.7, pp.245-248	2
Conference	2007	Application of Atomic Layer Deposition for the Transparent Display Park Sang-Hee International Conference on Atomic Layer Deposition (ALD) 2007, pp.1-1
Conference	2007	P‐18: Improvement of Stability in ZnO TFT Under Bias Stress Hwang Chi-Sun Society for Information Display (SID) International Symposium 2007, pp.237-240	6
Journal	2007	Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition Sun Jin Yun Electrochemical and Solid-State Letters, v.10, no.3, pp.H90-H93	11
Journal	2007	Sublithographic Vertical Gold Nanogap for Label-free Electrical Detection of Protein-ligand Binding 장동윤 Journal of Vacuum Science and Technology B, v.25, no.2, pp.443-447	62
Conference	2006	High-K Nano-Composite ZrO2/Al2O3 Films Deposited by Plasma-Enhanced Atomic Layer Deposition Sun Jin Yun International Conference on Nano Science and Nano Technology (GJ-NST) 2009, pp.1-25
Journal	2006	Performance Improvement of Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate by Plasma Oxidation of Polycrystalline Si Surface Kim Yong Hae IEEE Electron Device Letters, v.27, no.11, pp.896-898	10
Conference	2006	1.5 μm InAlGaAsllnP VCSELs with A1203 Embedded Apertures Song Hyun Woo IEEE Lasers and Electro-Optics Society (LEOS) Meeting 2006, pp.444-445	0
Conference	2006	Characteristics of ZrAlO Films Deposited by Plasma Enhanced Atomic Layer Deposition Sun Jin Yun The Electrochemical Society (ECS) Meeting 2006, pp.1-2
Conference	2006	Transparent ZnO Transistor Array by Means of Plasma Enhanced Atomic Layer Deposition Park Sang-Hee International Meeting on Information Display 2006, pp.601-604
Conference	2006	Plasma Oxidation Effect on Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate Kim Yong Hae International Meeting on Information Display 2006, pp.1122-1125
Conference	2006	Plasma Enhanced Atomic Layer Deposition of Vanadium Oxide using Tetrakis(Ethylmethylamino) Vanadium and O2 as Precursors Sun Jin Yun International Conference on Atomic Layer Deposition Workshop (ALD) 2006, pp.1-1
Conference	2006	Plasma-Enhanced Atomic Layer Deposition of ZrO2 film and the Performance of Pentacene thin film Transistor with ZrO2 Gate Dielectric Layer Sun Jin Yun International Conference on Atomic Layer Deposition Workshop (ALD) 2006, pp.1-1
Journal	2006	Long-wavelength InAlGaAs VCSELs with Al2O3 Embedded Current-confinement Apertures Song Hyun Woo Electronics Letters, v.42, no.14, pp.808-809	4
Conference	2006	4.3: Transparent ZnO Thin Film Transistor Array for the Application of Transparent AM-OLED Display Park Sang-Hee International Symposium, Seminar and Exhibition (SID) 2006, pp.25-28	43
Conference	2006	Switching Mechanism of TiO2 thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Ryu Min Ki MRS Meeting 2006 (Spring), pp.1-1
Journal	2006	Comparative study on Chemical Stability of Dielectric Oxide Films under HF Wet and Vapor Etching for Radiofrequency Microelectromechanical System Application Yang Woo Seok Thin Solid Films, v.500, no.1-2, pp.231-236	20
Conference	2006	Self-Aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate Jaehyun Moon Materials Research Society (MRS) Meeting 2006 (Spring), pp.1-6
Conference	2006	Plasma-Enhanced Atomic Layer Deposition 기술을 이용한 ZrOB 2B 박막 증착 공정에서 증착 온도와 Plasma Pulse Width가 박막 특성에 미치는 효과 Sun Jin Yun 한국반도체 학술 대회 (KCS) 2006, pp.1-2
Journal	2006	Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition Lim Jungwook Electrochemical and Solid-State Letters, v.9, no.1, pp.F8-F11	9
Journal	2005	Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition Sun Jin Yun Electrochemical and Solid-State Letters, v.8, no.11, pp.F47-F50	27
Conference	2005	Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition Park Sang-Hee ECS Transactions, pp.125-130	2
Journal	2005	Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition Lim Jungwook Electrochemical and Solid-State Letters, v.8, no.9, pp.F25-F28	16
Journal	2005	Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition Lim Jungwook ETRI Journal, v.27, no.1, pp.118-121	68
Journal	2005	원자층증착법에 의한 초박막 봉지기술 Park Sang-Hee Electrochemical and Solid-State Letters, v.8, no.2, pp.21-23	149
Journal	2004	고성능 저온 폴리실리콘 소자 특성 Kim Yong Hae IEEE Electron Device Letters, v.25, no.8, pp.550-552	27

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