Subjects : electron mobility

Articles (86)
Patents (7)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2025	Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging Junhyung Kim Electronics Letters, v.61, no.1, pp.1-4	0
Conference	2024	A Ku-Band Low-Noise Amplifier MMIC Using 0.15-µm GaN HEMT Technology Woojin Chang International Symposium on Antennas and Propagation (ISAP) 2024, pp.1-2	0
Journal	2024	The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8	0
Conference	2024	Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs Jung Hyunwook International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444	0
Conference	2024	A 15-W X-Band Power Amplifier MMIC Using 0.15-μm GaN HEMT Technology Woojin Chang 대한전자공학회 학술 대회 (하계) 2024, pp.521-524
Journal	2024	X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling Junhyung Jeong Electronics Letters, v.60, no.10, pp.1-3	1
Journal	2024	Four-channel GaAs multifunction chips with bottom RF interface for Ka-band SATCOM antennas Jeong Jin Cheol ETRI Journal, v.46, no.2, pp.323-332	2
Journal	2024	Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate Jung Hyunwook Materials Science in Semiconductor Processing, v.170, pp.1-5	2
Conference	2023	Ku-Band 35W Power Amplifier MMIC Using 0.15 µm GaN HEMT Technology Youn Sub Noh PhotonIcs and Electromagnetics Research Symposium (PIERS) 2023, pp.794-797	2
Journal	2023	Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel Jong Yul Park Electronics Letters, v.59, no.14, pp.1-3	2
Journal	2023	Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator Sungjae Chang Nanomaterials, v.13, no.5, pp.1-13	1
Journal	2023	Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process Min Byoung-Gue ETRI Journal, v.45, no.1, pp.171-179	4
Journal	2023	25–31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications 안현배 IEEE Microwave and Wireless Technology Letters, v.33, no.1, pp.47-50	10
Conference	2022	A 28GHz-band integrated GaAs Power Amplifier for 5G Mobile Communications Park Bong Hyuk International SoC Design Conference (ISOCC) 2022, pp.376-377	1
Conference	2022	A Ku-band Cascode Low Noise Amplifier using InGaAs E-mode 0.15-um pHEMT Technology Kong Sunwoo Global Symposium on Millimeter-Waves & Terahertz (GSMM) 2022, pp.32-34	4
Journal	2022	Highly Efficient Hybrid Light-Emitting Transistors incorporating MoOx/Ag/MoOx Semi-Transparent Electrodes 박유정 Journal of Materials Chemistry C, v.10, no.3, pp.880-885	5
Journal	2021	Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications 문석호 ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592	13
Journal	2021	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors Sungjae Chang Crystals, v.11, no.11, pp.1-10	6
Journal	2021	Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435
Conference	2021	Study of Threshold Voltage Shift Mechanism Corresponding to the Proton Radiation Energy in GaN-based MIS-HEMTs Sungjae Chang 대한전자공학회 학술 대회 (하계) 2021, pp.93-96
Journal	2021	Technical Trends in GaN RF Electronic Device and Integrated Circuits for 5G Mobile Telecommunication Jongmin Lee 전자통신동향분석, v.36, no.3, pp.53-64
Journal	2020	Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Sungjae Chang Nanomaterials, v.10, no.11, pp.1-11	11
Journal	2020	Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9	5
Journal	2020	W‐Band MMIC chipset in 0.1‐μm mHEMT technology Jongmin Lee ETRI Journal, v.42, no.4, pp.549-561	6
Journal	2019	Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122
Journal	2019	Technical Trends in Next-Generation GaN RF Power Devices and Integrated Circuits Lee Sang-Heung 전자통신동향분석, v.34, no.5, pp.71-80
Journal	2019	Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect 황인태 Applied Sciences, v.9, no.17, pp.1-13	6
Journal	2019	DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess Hyung Sup Yoon 한국전자파학회논문지, v.30, no.4, pp.282-285
Journal	2019	DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure 곽현탁 Journal of Nanoscience and Nanotechnology, v.19, no.4, pp.2319-2322
Journal	2019	Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier 김정길 Solid-State Electronics, v.152, pp.24-28	9
Journal	2018	Technical Trends of Semiconductors for Harsh Environments Woojin Chang 전자통신동향분석, v.33, no.6, pp.12-23
Journal	2018	High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier 이준혁 IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186	39
Journal	2018	Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure 곽현탁 Applied Sciences, v.8, no.6, pp.1-14	25
Conference	2018	Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond Kim Zin-Sig 대한전자공학회 학술 대회 (하계) 2018, pp.195-198
Journal	2018	Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation Sungjae Chang ECS Journal of Solid State Science and Technology, v.7, no.6, pp.86-90	8
Journal	2017	A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology Shin Dong Hwan Journal of Electromagnetic Engineering and Science, v.17, no.4, pp.178-180	5
Journal	2017	Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364	2
Journal	2017	Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369	7
Journal	2017	Growth of 10 nm‐thick AlIn(Ga)N/GaN heterostructure with high electron mobility and low sheet resistance 김정길 Physica Status Solidi (B), v.254, no.8, pp.1-5	2
Journal	2017	The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors Jae Won Do Thin Solid Films, v.628, pp.31-35	10
Journal	2017	High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161	15
Conference	2016	Hydrazine (N2H4)-Based Surface Treatment Method for AlGaN/GaN MIS-HEMTs with A High Quality Interface Jung Hyunwook International Conference on Solid State Devices and Materials (SSDM) 2016, pp.785-786
Journal	2016	A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications Youn Sub Noh IEEE Microwave and Wireless Components Letters, v.26, no.8, pp.619-621	49
Conference	2016	GaN HEMT Modeling for X-band Applications Kim Seong-Il 대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560
Conference	2016	A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2016, pp.1-1
Journal	2015	Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system Mun Jae Kyoung Solid-State Electronics, v.114, pp.121-130	2
Journal	2015	High-Performance Amorphous Multilayered ZnO-SnO2 Heterostructure Thin-Film Transistors: Fabrication and Characteristics Su Jae Lee ETRI Journal, v.37, no.6, pp.1135-1142	28
Journal	2015	GaN HPA Monolithic Microwave Integrated Circuit for Ka Band Satellite Down Link Payload Ji Hong Gu 한국산학기술학회논문지, v.16, no.12, pp.8643-8648
Journal	2015	Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs Kyu Jun Cho Journal of the Korean Physical Society, v.67, no.4, pp.682-686	3
Journal	2015	DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2 Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657	3
Conference	2015	Ka-band GaN Power Amplifier MMIC Chipset for Satellite and 5G Cellular Communications Youn Sub Noh Asia-Pacific Conference on Antennas and Propagation (APCAP) 2015, pp.482-485	21
Conference	2015	X-Band Power Amplifier Using 40W GaN-on-SiC HEMT Dong Min Kang 대한전자공학회 종합 학술 대회 (하계) 2015, pp.231-234
Journal	2015	Highly Integrated C-Band GaN High Power Amplifier MMIC for Phased Array Applications Youn Sub Noh IEEE Microwave and Wireless Components Letters, v.25, no.6, pp.406-408	23
Conference	2015	GaN High Power Devices and Their Applications Mun Jae Kyoung The Electrochemical Society (ECS) Meeting 2015 (ECS Transactions 66), v.66, no.1, pp.79-83	0
Journal	2015	X‐band 100 W solid‐state power amplifier using a 0.25 μM GaN HEMT technology Dong Min Kang Microwave and Optical Technology Letters, v.57, no.1, pp.212-216	6
Conference	2014	100W Pulsed SSPA Using 25W AlGaN/GaN HEMT Technology at 9.2 - 9.5 GHz Dong Min Kang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.75-75
Journal	2014	Characterization of Amorphous Multilayered ZnO-SnO2 Heterostructure Thin Films and their Field Effect Electronic Properties Su Jae Lee Applied Physics Letters, v.105, no.20, pp.1-4	14
Conference	2014	Compact 10 ~ 13 GHz GaN Low Noise Amplifier MMIC using Simple Matching and Bias Circuits Woojin Chang European Microwave Integrated Circuits Conference (EuMIC) 2014, pp.516-519	11
Journal	2014	Ku‐band GaN HPA MMIC with high‐power and high‐PAE performances Youn Sub Noh Electronics Letters, v.50, no.19, pp.1361-1363	9
Journal	2014	X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology Woojin Chang Microwave and Optical Technology Letters, v.56, no.1, pp.96-99	9
Journal	2013	Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment Jong-Won Lim Thin Solid Films, v.547, pp.106-110	10
Conference	2013	X-Band Low Noise Amplifier MMIC Using AlGaN/GaN HEMT Technology on SiC Substrate Woojin Chang Asia-Pacific Microwave Conference (APMC) 2013, pp.681-684	7
Journal	2012	K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors Park Young Rak Microwave and Optical Technology Letters, v.54, no.11, pp.2624-2626	0
Journal	2012	Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106	1
Journal	2012	80–110 GHz MMIC amplifiers using a 0.1‐μm GaAs‐based mHEMT technology Dong Min Kang Microwave and Optical Technology Letters, v.54, no.8, pp.1978-1982	1
Journal	2012	E-Band Wideband MMIC Receiver Using 0.1 um GaAs pHEMT Process Kim Bong-Su ETRI Journal, v.34, no.4, pp.485-491	7
Journal	2011	Charge Injection Engineering of Ambipolar Field-Effect Transistors for High-Performance Organic Complementary Circuits Kang-Jun Baeg ACS Applied Materials & Interfaces, v.3, no.8, pp.3205-3214	154
Conference	2011	Design of 220 GHz-band Amplifier Using InP HEMT Technology Woojin Chang International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2011, pp.1120-1122
Journal	2010	Monolithic Integrated Amplifier for Millimeter Wave Band Ji Hong Gu 한국산학기술학회논문지, v.11, no.10, pp.3917-3922
Conference	2010	Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987
Conference	2009	60 GHz Amplifier Module Using Low Temperature Co-fired Ceramic Technology Woojin Chang International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2009, pp.1-3
Journal	2008	A transceiver module for automotive radar sensors using W‐band monolithic microwave‐integrated circuit one‐chip set Dong Min Kang Microwave and Optical Technology Letters, v.50, no.9, pp.2371-2376	0
Conference	2007	Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel Hyung Sup Yoon International Conference on Indium Phosphide and Related Materials (IPRM) 2007, pp.110-113	0
Conference	2006	Preamplifier Design for Fiber-Optic mm-Wave Wireless System Hong Seon-Eui European Microwave Conference (EuMC) 2006, pp.1545-1547	1
Conference	2006	Broadband 60 GHz Power Amplifier MMIC with Excellent Gain-Flatness Woojin Chang International Conference on Solid State Devices and Materials (SSDM) 2006, pp.614-615
Journal	2006	Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383	2
Journal	2005	DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690	5
Conference	2005	Preamplifier Design with Narrow Band for Fiber-Optic Millimeter-Wave Wireless LAN Hong Seon-Eui Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4	0
Journal	2005	A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs Jong-Won Lim ETRI Journal, v.27, no.3, pp.304-311	8
Journal	2005	A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems Dong Min Kang ETRI Journal, v.27, no.2, pp.133-139	11
Journal	2004	The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs Youn Doo Hyeb IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789	15
Journal	2003	Electrical Characteristics of Metal-Insulator-Semiconductor Schottky Diodes using a Photowashing Treatment in AlxGa1-xAs/InGaAs (X=0.75) Pseudomorphic High Electron Mobility Transistors Sang Youn Han Journal of Vacuum Science and Technology B, v.21, no.5, pp.2133-2137	8
Journal	2003	Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic Contacts to AlxGa1-xAs/InGaAs (x = 0.75) Pseudomorphic High Electron Mobility Transistor Kyoung Jin Choi Journal of the Korean Physical Society, v.43, no.2, pp.253-258	8
Conference	2003	0.5um PHEMT를 이용한 무선랜용 5GHz 대역 MMIC 2단 전력증폭기 Dong Min Kang International Technical Conference on Circuits Systems, Computers and Communications (ITC-CSCC) 2003, pp.693-695
Journal	2003	High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567	15
Journal	2002	Characterization of ultrafast devices using near-field optical heterodyning M. E. Ali IEEE Microwave and Wireless Components Letters, v.12, no.10, pp.369-371	5

특허 검색결과
Status	Year	Patent Name	Country
Registered	2010	POWER AMPLIFIER HAVING DEPLETION MODE HIGH ELECTRON MOBILITY TRANSISTOR	UNITED STATES
Registered	2016	고전자 이동도 트랜지스터 및 그 제조방법	KOREA
Registered	2008	BIOSENSOR AND METHOD OF MANUFACTURING THE SAME	UNITED STATES
Registered	2006	METHOD OF FABRICATING PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR	UNITED STATES
Registered	2016	HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF	UNITED STATES
Registered	2021	질화물계 고 전자 이동도 트랜지스터 및 그 제조 방법	KOREA
Registered	2013	TRANSISTOR AND METHOD OF FABRICATING THE SAME	UNITED STATES

연구보고서 검색결과
Type	Year	Research Project	Primary Investigator	Download
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