Subjects : Leakage Current

Articles (98)
Patents (6)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2025	Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging Junhyung Kim Electronics Letters, v.61, no.1, pp.1-4	0
Journal	2024	Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors 김희태 IEEE Electron Device Letters, v.45, no.12, pp.2431-2434	1
Journal	2024	Rapid activation of a solution-processed aluminum oxide gate dielectric through intense pulsed light irradiation 오연화 RSC Advances, v.14, no.50, pp.37438-37444	1
Journal	2024	The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8	0
Journal	2023	Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer Jeonggil Kim Micromachines, v.14, no.6, pp.1-10	5
Journal	2023	Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer 이준혁 Micromachines, v.14, no.6, pp.1-10	5
Journal	2022	Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si Ho Sung Kim Nanoscale Research Letters, v.17, pp.1-7	4
Conference	2021	Conducted Electromagnetic Interference Energy Harvesting for Green Communication of IoT Sensors Hyoung Chang Hee International Conference on Information and Communication Technology Convergence (ICTC) 2021, pp.1743-1746	0
Journal	2021	Effects of Moisture-Proof Back Passivation Layers of Al2O3 and AlxTi1-xOy Films on Efficiency Improvement and Color Modulation in Transparent a-Si:H Solar Cells Kim Jieun ACS Applied Materials & Interfaces, v.13, no.4, pp.4968-4974	13
Journal	2020	Electrically Stable Polymer-only Dielectrics for Organic Field-effect Transistors with Low Gate Leakage Current Sooji Nam Organic Electronics, v.85, pp.1-5	14
Journal	2020	Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175
Conference	2019	Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218
Journal	2019	Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect 황인태 Applied Sciences, v.9, no.17, pp.1-13	6
Journal	2019	An Eco-friendly Flexible Piezoelectric Energy Harvester That Delivers High Output Performance is Based on Lead-free MASnI3 Films and MASnI3-PVDF Composite Films Swathi Ippili Nano Energy, v.57, pp.911-923	114
Journal	2019	Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier 김정길 Solid-State Electronics, v.152, pp.24-28	9
Journal	2018	High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier 이준혁 IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186	39
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 조영우 Solid-State Electronics, v.141, pp.7-12	9
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 손동혁 Solid-State Electronics, v.141, pp.7-12	9
Journal	2018	Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17	9
Journal	2017	Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss Jung Dong Yun ETRI Journal, v.39, no.6, pp.866-873	12
Journal	2017	Flexible Integrated OLED Substrates Prepared by Printing and Plating Process Cho Doo-Hee Organic Electronics, v.50, pp.170-176	51
Journal	2017	Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369	7
Journal	2017	Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure Lee Hyun Soo Journal of Semiconductor Technology and Science, v.17, no.3, pp.354-362	1
Journal	2017	The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors Jae Won Do Thin Solid Films, v.628, pp.31-35	10
Journal	2017	High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161	15
Journal	2017	Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems Jung Dong Yun ETRI Journal, v.39, no.1, pp.62-68	16
Journal	2016	Improved stability of electrical properties of nitrogen-added Al 2 O 3 films grown by PEALD as gate dielectric Lee Da Jung Materials Research Bulletin, v.83, pp.597-602	10
Journal	2016	Transformer-Reuse Reconfigurable Synchronous Boost Converter with 20 mV MPPT-Input, 88% Efficiency and 37 mW Maximum Output Power Im Jong Pil ETRI Journal, v.38, no.4, pp.654-664	4
Journal	2016	Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET Hokyun Ahn ETRI Journal, v.38, no.4, pp.675-684	5
Journal	2016	Surface Al Doping of 4H-SiC Via Low Temperature Annealing Junbo Park Applied Physics Letters, v.109, no.3, pp.1-5	5
Journal	2016	Photo-patternable High-k ZrOx Dielectrics Prepared using Zirconium Acrylate for Low-voltage-operating Organic Complementary Inverters 정용진 Organic Electronics, v.33, pp.40-47	24
Journal	2016	Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application Won Jong Il ETRI Journal, v.38, no.2, pp.244-251	10
Journal	2016	A Low Temperature, Solution-Processed Poly(4-vinylphenol), YOx Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor Shin Hyun Woo Journal of Nanoscience and Nanotechnology, v.16, no.3, pp.2632-2636	3
Conference	2015	Suppression of Leakage Current in Dual Schottky Barrier Diode using BOE Treatment Hyun-Gyu Jang International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1
Journal	2015	0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal Lee Hyun Soo IEEE Electron Device Letters, v.36, no.11, pp.1132-1134	51
Journal	2015	Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7513-7517	4
Journal	2015	High-Voltage 4H-SiC Trench MOS Barrier Schottky Rectifier with Low Forward Voltage Drop Using Enhanced Sidewall Layer Cho Doo Hyung Japanese Journal of Applied Physics, v.54, no.12, pp.1-5	6
Journal	2015	Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs Kyu Jun Cho Journal of the Korean Physical Society, v.67, no.4, pp.682-686	3
Journal	2015	Low Leakage Current AlGaN/GaN on Si-Based Schottky Barrier Diode with Bonding-Pad Electrode Mesa Etching Hyun-Gyu Jang Japanese Journal of Applied Physics, v.54, no.7, pp.1-5	3
Conference	2015	Variations of DC Properties of AlGaN/GaN HEMT by Process Enhancement of Gate Recess Min Byoung-Gue 대한전자공학회 종합 학술 대회 (하계) 2015, pp.192-195
Journal	2015	Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process Kim Jeong-Jin Japanese Journal of Applied Physics, v.54, no.3, pp.1-3	1
Journal	2015	A Feasibility Study on the Adoption of Human Body Communication for Medical Service Hyoung Chang Hee IEEE Transactions on Circuits and Systems II : Express Briefs, v.62, no.2, pp.169-173	19
Journal	2015	Stretchable Organic Thin-Film Transistors Fabricated on Elastomer Substrates Using Polyimide Stiff-Island Structures Soon-Won Jung ECS Solid State Letters, v.4, no.1, pp.P1-P3	33
Journal	2014	Electrical Properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN Metal-Insulator-Semiconductor (MIS) Structure V Rajagopal Reddy Semiconductor Science and Technology, v.29, no.7, pp.1-6	29
Journal	2014	Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths Park Young Rak Electronics Letters, v.50, no.16, pp.1164-1165	17
Journal	2014	Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests Jongmin Lee Journal of the Korean Physical Society, v.64, no.10, pp.1446-1450	3
Journal	2014	Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate Hokyun Ahn Solid-State Electronics, v.95, pp.42-45	18
Journal	2013	Analysis of Failure in Miniature X‐ray Tubes with Gated Carbon Nanotube Field Emitters Kang Jun Tae ETRI Journal, v.35, no.6, pp.1164-1167	18
Journal	2013	Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor Soon-Won Jung ETRI Journal, v.35, no.4, pp.734-737	18
Conference	2013	Analysis of CNT Emitter-Based Miniature X-Ray Tubes for Stable and Reliable Operation Kang Jun Tae International Vacuum Nanoelectronics Conference (IVNC) 2013, pp.1-2	1
Journal	2012	Important Role of Polymorphs of Organic Semiconductors on the Reduction of Current Leakage in an Organic Capacitor 배진혁 Molecular Crystals and Liquid Crystals, v.567, no.1, pp.57-6286	1
Journal	2012	A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556	2
Journal	2012	The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors Jang Moon Gyu Thin Solid Films, v.520, no.6, pp.2166-2169	1
Conference	2011	High-transmission Triode CNT Emitter on Metal Tip for Super-miniature X-ray Tube Kang Jun Tae International Vacuum Nanoelectronics Conference (IVNC) 2011, pp.145-146
Journal	2011	“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel Yoon Sung Min Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499	2
Journal	2011	High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4	1
Journal	2010	Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor Jang Moon Gyu Journal of Vacuum Science and Technology B, v.28, no.4, pp.799-801	6
Journal	2010	Temperature Dependency and Carrier Transport Mechanisms of Ti/p-Type InP Schottky Rectifiers V. Janardhanam Journal of Alloys and Compounds, v.504, no.1, pp.146-150	87
Journal	2010	Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926	108
Journal	2010	Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer Soon-Won Jung Current Applied Physics, v.10, no.1 SUPPL., pp.e58-e61	31
Journal	2010	Optical and Electrical Properties of AlxTi1-xO Films Lim Jungwook Journal of the Korean Physical Society, v.56, no.1, pp.96-99	3
Journal	2009	Properties of Al₂O₃ Insulating Film Using the ALD Method for Nonvolatile Memory Application Soon-Won Jung 전기학회논문지, v.58, no.12, pp.2420-2424
Journal	2009	Biosensors using the Si nanochannel junction-isolated from the Si bulk substrate Chang-Geun Ahn Journal of Applied Physics, v.106, no.11, pp.1-6	6
Journal	2009	Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer Yoon Sung Min Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6	32
Journal	2009	A 0.6-V Delta–Sigma Modulator With Subthreshold-Leakage Suppression Switches 노형동 IEEE Transactions on Circuits and Systems II : Express Briefs, v.56, no.11, pp.825-829	36
Journal	2009	Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications Yoon Sung Min Japanese Journal of Applied Physics, v.48, no.9, pp.1-4	3
Journal	2009	Low Voltage Operation of Nonvolatile Ferroelectric Capacitors Using Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer and Thin Al2O3 Insulating Layer Soon-Won Jung Electrochemical and Solid-State Letters, v.12, no.9, pp.H325-H328	12
Journal	2009	Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique 문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624	6
Journal	2009	Fabrication of N- and P-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods 신진욱 Japanese Journal of Applied Physics, v.48, no.4, pp.1-4	0
Journal	2009	Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors Yong-Young Noh Organic Electronics, v.10, no.1, pp.174-180	121
Conference	2009	Electrical and Optical Properties of AlTiO Films Lim Jungwook 한국반도체 학술 대회 (KCS) 2009, pp.1-2
Conference	2009	P‐8: Effects of Active Thickness in Oxide Semiconductor TFTs Hwang Chi-Sun Society for Information Display (SID) International Symposium 2009, pp.1107-1109	10
Journal	2009	Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477	1
Journal	2008	20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors Jang Moon Gyu Applied Physics Letters, v.93, no.19, pp.1-3	11
Journal	2008	Enhancement of a top emission organic light-emitting diode with a double buffer layer Chung Sung Mook Synthetic Metals, v.158, no.14, pp.561-564	7
Journal	2008	The improvement of mechanical and dielectric properties of ordered mesoporous silica film using TEOS–MTES mixed silica precursor 하태정 Ceramics International, v.34, no.4, pp.947-951	25
Journal	2008	3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate Kim Yong Hae ETRI Journal, v.30, no.2, pp.308-314	8
Journal	2008	A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET Chang-Geun Ahn Materials Science and Engineering B, v.147, no.2-3, pp.183-186	4
Conference	2007	Fabrication of a Direct-Type Silicon Pixel Detector for a Large Area Hybrid X-Ray Imaging Device Park Kun Sik Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) 2007, pp.3446-3449	1
Journal	2007	Consideration of the Leakage-Current and the Radiation-Response Characteristics of Silicon PIN Detectors with Different N-Type Substrates and their Application to a Personal γ-ray Dosimeter Park Jong-Moon Journal of the Korean Physical Society, v.51, no.1, pp.10-17
Journal	2007	Degradation Analysis in Asymmetric Sampled Grating Distributed Feedback Laser Diodes 주한성 Microelectronics Journal, v.38, no.6-7, pp.740-745	0
Conference	2006	Active-Matrix Cathodes for Improving Uniformity of Field Emission Display Jeong Jin Woo 한국반도체 학술 대회 (KCS) 2006, pp.779-780
Conference	2006	Effects of the Resistivity and Crystal Orientation of the Silicon PIN Detector on the Dark Current and Radiation Response Characteristics Park Kun Sik IEEE Nuclear Science Symposium Conference Record 2006, pp.1068-1072	3
Journal	2006	Design and Fabrication of the Double-Sided Silicon Microstrip Sensor 박환배 Journal of the Korean Physical Society, v.49, no.4, pp.1401-1406
Conference	2006	Two Dimensional 32×32 InGaAs/InP Photodiode Arrays and Dark Current Characteristics Limited by the Diffusion and Generation-Recombination Eun Soo Nam International Conference on Optical Internet and Next Generation Network (COIN-NGNCON) 2006, pp.78-80	1
Conference	2006	High Performance Silicon PIN Photodiode for Near-IR Spectral Range (2): Leakage Current and Photo-response Characteristics Park Kun Sik 한국반도체 학술 대회 (KCS) 2006, pp.241-243
Journal	2006	Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732	32
Journal	2006	Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition Lim Jungwook Electrochemical and Solid-State Letters, v.9, no.1, pp.F8-F11	9
Conference	2005	Enhancement of luminance Characteristics in Top Emitting OLEDs with the Cr/Al/Cr Anodes Chung Sung Mook International Display Workshops (IDW) 2005, pp.1-4
Conference	2005	Fabrication of High Performance Low Temperature Poly-Si(LTPS) on Flexible Metal Foil Park Dong Jin International Display Workshops in Conjunction with Asia Display (IDW/AD) 2005, pp.1-4
Journal	2005	Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition Lim Jungwook Electrochemical and Solid-State Letters, v.8, no.9, pp.F25-F28	16
Journal	2005	Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers 한성주 IEEE Transactions on Device and Materials Reliability, v.5, no.2, pp.262-267	6
Conference	2005	A Single-Pole 6-Throw (SP6T) Antenna Switch Using Metal-Contact RF MEMS Switches for Multi-Band Applications Jaewoo Lee IEEE MTT-S International Microwave Symposium 2005, pp.931-934	8
Journal	2005	Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition Lim Jungwook ETRI Journal, v.27, no.1, pp.118-121	68
Journal	2004	표면처리에 의한 CNT의 효율적인 전자방출 Kwang Bok Kim Journal of Vacuum Science and Technology B, v.22, no.3, pp.1331-1334	48
Journal	2003	엑시머 레이저 에 의해 형성된 TFT 특성 Kim Yong Hae Thin Solid Films, v.440, no.1-2, pp.169-173	12
Journal	2003	Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic Contacts to AlxGa1-xAs/InGaAs (x = 0.75) Pseudomorphic High Electron Mobility Transistor Kyoung Jin Choi Journal of the Korean Physical Society, v.43, no.2, pp.253-258	8
Journal	2002	Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors 최경진 Japanese Journal of Applied Physics, v.41, no.5A, pp.2894-2899	7

특허 검색결과
Status	Year	Patent Name	Country
Registered	2008	Fabrication Method of Low Power Semiconductor Device using SOI BiCMOS	UNITED STATES
Registered	2016	HIGH RELIABILITY FIELD EFFECT POWER DEVICE AND MANUFACTURING METHOD THEREOF	UNITED STATES
Registered	2006	SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME	UNITED STATES
Registered	2017	SEMICONDUCTOR DEVICE WITH PASSIVATION LAYER FOR CONTROL OF LEAKAGE CURRENT	UNITED STATES
Registered	2008	Active-Matrix Field Emission Display and Its Driving Method	UNITED STATES
Registered	2009	EXTERNAL CAVITY LASER LIGHT SOURCE	UNITED STATES

연구보고서 검색결과
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