Subjects : High-electron mobility transistor (HEMT)

Articles (93)
Patents (9)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2025	Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging Junhyung Kim Electronics Letters, v.61, no.1, pp.1-4	0
Conference	2024	An 8.9-17.3 GHz Low Noise Amplifier in Enhancement-Mode GaAs 0.15-um pHEMT process Kong Sunwoo Asia-Pacific Microwave Conference (APMC) 2024, pp.1-3	0
Conference	2024	A Ku-Band Low-Noise Amplifier MMIC Using 0.15-µm GaN HEMT Technology Woojin Chang International Symposium on Antennas and Propagation (ISAP) 2024, pp.1-2	0
Conference	2024	0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band Junhyung Jeong International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457	0
Journal	2024	The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8	0
Conference	2024	Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs Jung Hyunwook International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444	0
Conference	2024	A 15-W X-Band Power Amplifier MMIC Using 0.15-μm GaN HEMT Technology Woojin Chang 대한전자공학회 학술 대회 (하계) 2024, pp.521-524
Journal	2024	X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling Junhyung Jeong Electronics Letters, v.60, no.10, pp.1-3	1
Journal	2024	Four-channel GaAs multifunction chips with bottom RF interface for Ka-band SATCOM antennas Jeong Jin Cheol ETRI Journal, v.46, no.2, pp.323-332	2
Journal	2024	Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate Jung Hyunwook Materials Science in Semiconductor Processing, v.170, pp.1-5	2
Conference	2023	Ku-Band 35W Power Amplifier MMIC Using 0.15 µm GaN HEMT Technology Youn Sub Noh PhotonIcs and Electromagnetics Research Symposium (PIERS) 2023, pp.794-797	2
Journal	2023	Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel Jong Yul Park Electronics Letters, v.59, no.14, pp.1-3	2
Journal	2023	Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator Sungjae Chang Nanomaterials, v.13, no.5, pp.1-13	1
Journal	2023	Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process Min Byoung-Gue ETRI Journal, v.45, no.1, pp.171-179	4
Journal	2023	25–31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications 안현배 IEEE Microwave and Wireless Technology Letters, v.33, no.1, pp.47-50	10
Conference	2022	A 28GHz-band integrated GaAs Power Amplifier for 5G Mobile Communications Park Bong Hyuk International SoC Design Conference (ISOCC) 2022, pp.376-377	1
Journal	2021	Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications 문석호 ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592	13
Journal	2021	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors Sungjae Chang Crystals, v.11, no.11, pp.1-10	6
Journal	2021	Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435
Conference	2021	Study of Threshold Voltage Shift Mechanism Corresponding to the Proton Radiation Energy in GaN-based MIS-HEMTs Sungjae Chang 대한전자공학회 학술 대회 (하계) 2021, pp.93-96
Journal	2021	Technical Trends in GaN RF Electronic Device and Integrated Circuits for 5G Mobile Telecommunication Jongmin Lee 전자통신동향분석, v.36, no.3, pp.53-64
Journal	2020	Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Sungjae Chang Nanomaterials, v.10, no.11, pp.1-11	11
Journal	2020	Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9	5
Journal	2020	W‐Band MMIC chipset in 0.1‐μm mHEMT technology Jongmin Lee ETRI Journal, v.42, no.4, pp.549-561	6
Journal	2020	A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices Min Byoung-Gue Journal of the Korean Physical Society, v.77, no.2, pp.122-126	4
Journal	2019	Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122
Journal	2019	Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect 황인태 Applied Sciences, v.9, no.17, pp.1-13	6
Journal	2019	DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess Hyung Sup Yoon 한국전자파학회논문지, v.30, no.4, pp.282-285
Journal	2019	DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure 곽현탁 Journal of Nanoscience and Nanotechnology, v.19, no.4, pp.2319-2322
Journal	2019	Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier 김정길 Solid-State Electronics, v.152, pp.24-28	9
Journal	2019	GaN MIS-HEMT PA MMICs for 5G Mobile Devices Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200	5
Journal	2018	High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier 이준혁 IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186	39
Journal	2018	Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure 곽현탁 Applied Sciences, v.8, no.6, pp.1-14	25
Conference	2018	Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond Kim Zin-Sig 대한전자공학회 학술 대회 (하계) 2018, pp.195-198
Journal	2018	Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation Sungjae Chang ECS Journal of Solid State Science and Technology, v.7, no.6, pp.86-90	8
Journal	2018	A 6–18-GHz GaAs Multifunction Chip With 8-bit True Time Delay and 7-bit Amplitude Control Jeong Jin Cheol IEEE Transactions on Microwave Theory and Techniques, v.66, no.5, pp.2220-2230	76
Journal	2018	Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric Maruf A. Bhuiyan IEEE Transactions on Nuclear Science, v.65, no.1, pp.46-52	22
Journal	2017	A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology Shin Dong Hwan Journal of Electromagnetic Engineering and Science, v.17, no.4, pp.178-180	5
Journal	2017	Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364	2
Journal	2017	Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369	7
Conference	2017	Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate Sungjae Chang International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89	4
Journal	2017	The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors Jae Won Do Thin Solid Films, v.628, pp.31-35	10
Journal	2017	High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161	15
Conference	2016	Hydrazine (N2H4)-Based Surface Treatment Method for AlGaN/GaN MIS-HEMTs with A High Quality Interface Jung Hyunwook International Conference on Solid State Devices and Materials (SSDM) 2016, pp.785-786
Journal	2016	A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications Youn Sub Noh IEEE Microwave and Wireless Components Letters, v.26, no.8, pp.619-621	49
Conference	2016	GaN HEMT Modeling for X-band Applications Kim Seong-Il 대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560
Conference	2016	A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2016, pp.1-1
Journal	2015	Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system Mun Jae Kyoung Solid-State Electronics, v.114, pp.121-130	2
Journal	2015	GaN HPA Monolithic Microwave Integrated Circuit for Ka Band Satellite Down Link Payload Ji Hong Gu 한국산학기술학회논문지, v.16, no.12, pp.8643-8648
Journal	2015	Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole Min Byoung-Gue Journal of the Korean Physical Society, v.67, no.4, pp.718-722	2
Journal	2015	Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs Kyu Jun Cho Journal of the Korean Physical Society, v.67, no.4, pp.682-686	3
Journal	2015	DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2 Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657	3
Conference	2015	Ka-band GaN Power Amplifier MMIC Chipset for Satellite and 5G Cellular Communications Youn Sub Noh Asia-Pacific Conference on Antennas and Propagation (APCAP) 2015, pp.482-485	21
Conference	2015	X-Band Power Amplifier Using 40W GaN-on-SiC HEMT Dong Min Kang 대한전자공학회 종합 학술 대회 (하계) 2015, pp.231-234
Journal	2015	Highly Integrated C-Band GaN High Power Amplifier MMIC for Phased Array Applications Youn Sub Noh IEEE Microwave and Wireless Components Letters, v.25, no.6, pp.406-408	23
Conference	2015	GaN High Power Devices and Their Applications Mun Jae Kyoung The Electrochemical Society (ECS) Meeting 2015 (ECS Transactions 66), v.66, no.1, pp.79-83	0
Journal	2015	Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment Park Young Rak Physica Status Solidi (A), v.2112, no.5, pp.1170-1173	11
Journal	2015	Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process Kim Jeong-Jin Japanese Journal of Applied Physics, v.54, no.3, pp.1-3	1
Journal	2015	X‐band 100 W solid‐state power amplifier using a 0.25 μM GaN HEMT technology Dong Min Kang Microwave and Optical Technology Letters, v.57, no.1, pp.212-216	6
Conference	2014	100W Pulsed SSPA Using 25W AlGaN/GaN HEMT Technology at 9.2 - 9.5 GHz Dong Min Kang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.75-75
Conference	2014	90GHz polarization-division duplex RF transceiver for multi-gigabit transmission Kim Kwang Seon European Microwave Conference (EuMC) 2014, pp.905-908	3
Conference	2014	Compact 10 ~ 13 GHz GaN Low Noise Amplifier MMIC using Simple Matching and Bias Circuits Woojin Chang European Microwave Integrated Circuits Conference (EuMIC) 2014, pp.516-519	11
Journal	2014	Ku‐band GaN HPA MMIC with high‐power and high‐PAE performances Youn Sub Noh Electronics Letters, v.50, no.19, pp.1361-1363	9
Journal	2014	X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology Woojin Chang Microwave and Optical Technology Letters, v.56, no.1, pp.96-99	9
Journal	2013	Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment Jong-Won Lim Thin Solid Films, v.547, pp.106-110	10
Conference	2013	X-Band Low Noise Amplifier MMIC Using AlGaN/GaN HEMT Technology on SiC Substrate Woojin Chang Asia-Pacific Microwave Conference (APMC) 2013, pp.681-684	7
Journal	2012	K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors Park Young Rak Microwave and Optical Technology Letters, v.54, no.11, pp.2624-2626	0
Journal	2012	16-QAM-Based Highly Spectral-Efficient E-band Communication System with Bit Rate up to 10 Gbps Kang Min Soo ETRI Journal, v.34, no.5, pp.649-654	17
Journal	2012	Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106	1
Journal	2012	80–110 GHz MMIC amplifiers using a 0.1‐μm GaAs‐based mHEMT technology Dong Min Kang Microwave and Optical Technology Letters, v.54, no.8, pp.1978-1982	1
Journal	2012	E-Band Wideband MMIC Receiver Using 0.1 um GaAs pHEMT Process Kim Bong-Su ETRI Journal, v.34, no.4, pp.485-491	7
Conference	2011	Design of 220 GHz-band Amplifier Using InP HEMT Technology Woojin Chang International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2011, pp.1120-1122
Journal	2010	Monolithic Integrated Amplifier for Millimeter Wave Band Ji Hong Gu 한국산학기술학회논문지, v.11, no.10, pp.3917-3922
Conference	2010	Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987
Conference	2009	60 GHz Amplifier Module Using Low Temperature Co-fired Ceramic Technology Woojin Chang International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2009, pp.1-3
Journal	2009	Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477	1
Journal	2008	A transceiver module for automotive radar sensors using W‐band monolithic microwave‐integrated circuit one‐chip set Dong Min Kang Microwave and Optical Technology Letters, v.50, no.9, pp.2371-2376	0
Conference	2007	Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel Hyung Sup Yoon International Conference on Indium Phosphide and Related Materials (IPRM) 2007, pp.110-113	0
Conference	2006	Preamplifier Design for Fiber-Optic mm-Wave Wireless System Hong Seon-Eui European Microwave Conference (EuMC) 2006, pp.1545-1547	1
Conference	2006	Broadband 60 GHz Power Amplifier MMIC with Excellent Gain-Flatness Woojin Chang International Conference on Solid State Devices and Materials (SSDM) 2006, pp.614-615
Journal	2006	Experimental Evidence for Drude-Boltzmann-Like Transport in a Two-Dimensional Electron Gas in an AlGaN/GaN Heterostructure Jing Han Chen Journal of the Korean Physical Society, v.48, no.6, pp.1539-1543
Journal	2006	Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383	2
Journal	2006	Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process Jong-Won Lim Japanese Journal of Applied Physics, v.45, no.4B, pp.3358-3363	0
Journal	2005	DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690	5
Conference	2005	Preamplifier Design with Narrow Band for Fiber-Optic Millimeter-Wave Wireless LAN Hong Seon-Eui Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4	0
Journal	2005	A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs Jong-Won Lim ETRI Journal, v.27, no.3, pp.304-311	8
Journal	2005	A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems Dong Min Kang ETRI Journal, v.27, no.2, pp.133-139	11
Journal	2004	The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs Youn Doo Hyeb IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789	15
Journal	2003	Electrical Characteristics of Metal-Insulator-Semiconductor Schottky Diodes using a Photowashing Treatment in AlxGa1-xAs/InGaAs (X=0.75) Pseudomorphic High Electron Mobility Transistors Sang Youn Han Journal of Vacuum Science and Technology B, v.21, no.5, pp.2133-2137	8
Journal	2003	Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic Contacts to AlxGa1-xAs/InGaAs (x = 0.75) Pseudomorphic High Electron Mobility Transistor Kyoung Jin Choi Journal of the Korean Physical Society, v.43, no.2, pp.253-258	8
Conference	2003	0.5um PHEMT를 이용한 무선랜용 5GHz 대역 MMIC 2단 전력증폭기 Dong Min Kang International Technical Conference on Circuits Systems, Computers and Communications (ITC-CSCC) 2003, pp.693-695
Journal	2003	High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567	15
Journal	2002	Characterization of ultrafast devices using near-field optical heterodyning M. E. Ali IEEE Microwave and Wireless Components Letters, v.12, no.10, pp.369-371	5

특허 검색결과
Status	Year	Patent Name	Country
Registered	2010	POWER AMPLIFIER HAVING DEPLETION MODE HIGH ELECTRON MOBILITY TRANSISTOR	UNITED STATES
Registered	2022	HIGH-ELECTRON-MOBILITY TRANSISTOR DEVICE AND METHOD OF MANUFACURING THE SAME	UNITED STATES
Registered	2020	고 전자이동도 트랜지스터 및 그 제조 방법	KOREA
Registered	2016	고전자 이동도 트랜지스터 및 그 제조방법	KOREA
Registered	2022	고전자 이동도 트랜지스터 소자 및 그 제조 방법	KOREA
Registered	2006	METHOD OF FABRICATING PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR	UNITED STATES
Registered	2016	HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF	UNITED STATES
Registered	2021	질화물계 고 전자 이동도 트랜지스터 및 그 제조 방법	KOREA
Registered	2013	TRANSISTOR AND METHOD OF FABRICATING THE SAME	UNITED STATES

연구보고서 검색결과
Type	Year	Research Project	Primary Investigator	Download
No search results.