Subjects : threshold voltage (Vth)

Articles (125)
Patents (9)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2025	Electrical properties and conduction mechanisms of ε-GaSe films for selector and phase-change memory applications Lim Soyoung Applied Surface Science, v.682, pp.1-8	1
Journal	2024	Rapid activation of a solution-processed aluminum oxide gate dielectric through intense pulsed light irradiation 오연화 RSC Advances, v.14, no.50, pp.37438-37444	1
Conference	2024	Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs Jung Hyunwook International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444	0
Journal	2024	Wide process temperature of atomic layer deposition for In2 O3 thin-film transistors using novel indium precursor (N,N′-di-tert butylacetimidamido)dimethyllindium Juhun Lee Nanotechnology, v.35, no.37, pp.1-9	1
Journal	2024	Benzylphosphonic acid treated ultra-thin ALD-InOx for long term device stability Juhun Lee Journal of Materials Chemistry C, v.12, no.31, pp.11928-11937	1
Journal	2024	Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p−n Semiconductor Heterojunction Structure Jung Hoon Han ACS Applied Materials & Interfaces, v.16, no.24, pp.31254-31260	0
Conference	2023	Threshold Voltage Shift Mechanisms Induced by γ-ray and Proton Irradiation in GaN-based MIS-HEMTS for Satellite Communication System Sungjae Chang 한국통신학회 종합 학술 발표회 (하계) 2023, pp.1-3
Journal	2023	Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator Sungjae Chang Nanomaterials, v.13, no.5, pp.1-13	1
Journal	2022	Highly Efficient Hybrid Light-Emitting Transistors incorporating MoOx/Ag/MoOx Semi-Transparent Electrodes 박유정 Journal of Materials Chemistry C, v.10, no.3, pp.880-885	5
Conference	2021	Study of Threshold Voltage Shift Mechanism Corresponding to the Proton Radiation Energy in GaN-based MIS-HEMTs Sungjae Chang 대한전자공학회 학술 대회 (하계) 2021, pp.93-96
Journal	2020	Design and Characterization of N-MCT with Low Vth Off-FET for High Current-drive Capability Sungkyu Kwon Journal of Semiconductor Technology and Science, v.20, no.6, pp.533-542	2
Journal	2020	Few-layer PdSe2-based Field-effect Transistor for Photodetector Applications A.Venkatesan Materials Science in Semiconductor Processing, v.115, pp.1-7	9
Journal	2020	Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175
Journal	2019	Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect 황인태 Applied Sciences, v.9, no.17, pp.1-13	6
Journal	2019	Cone-jet Printing of Aligned Silver Nanowire/poly(ethylene oxide) Composite Electrodes for Organic Thin-film Transistors 김경훈 Organic Electronics, v.69, pp.190-199	35
Journal	2019	Cone-jet Printing of Aligned Silver Nanowire/poly(ethylene oxide) Composite Electrodes for Organic Thin-film Transistors Xinlin Li Organic Electronics, v.69, pp.190-199	35
Journal	2019	DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess Hyung Sup Yoon 한국전자파학회논문지, v.30, no.4, pp.282-285
Journal	2019	DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure 곽현탁 Journal of Nanoscience and Nanotechnology, v.19, no.4, pp.2319-2322
Journal	2019	GaN MIS-HEMT PA MMICs for 5G Mobile Devices Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200	5
Journal	2018	Comparison of Trapped Charges and Hysteresis Behavior in hBN Encapsulated Single MoS2 Flake based Field Effect Transistors on SiO2 and hBN Substrates 이창희 Nanotechnology, v.29, no.33, pp.1-8	88
Journal	2018	Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure 칸무하메드 ACS Applied Materials & Interfaces, v.10, no.28, pp.23961-23967	19
Journal	2018	Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors Yeonwha Oh Science of Advanced Materials, v.10, no.4, pp.518-521
Journal	2018	DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess Jung Hyunwook ECS Journal of Solid State Science and Technology, v.7, no.4, pp.197-200	2
Journal	2018	Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm2/V·s for High-Speed Operation Yang Jong-Heon IEEE Electron Device Letters, v.39, no.4, pp.508-511	39
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 조영우 Solid-State Electronics, v.141, pp.7-12	9
Journal	2018	Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching 손동혁 Solid-State Electronics, v.141, pp.7-12	9
Journal	2018	Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17	9
Journal	2017	80 μW/MHz, 850 MHz Fault Tolerant Processor with Fault Monitor Systems Han Jin Ho Journal of Semiconductor Technology and Science, v.17, no.5, pp.627-635	1
Journal	2017	Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364	2
Journal	2017	Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369	7
Journal	2017	High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161	15
Journal	2017	Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment 강민식 Nanoscale, v.9, no.4, pp.1645-1652	44
Journal	2016	High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications Kim Sang Gi Transactions on Electrical and Electronic Materials, v.17, no.5, pp.301-304	0
Journal	2016	Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET Hokyun Ahn ETRI Journal, v.38, no.4, pp.675-684	5
Journal	2016	Effects of Boundary and Bulk Control Technology in Cholesteric Liquid Crystals Gi Heon Kim Molecular Crystals and Liquid Crystals, v.633, no.1, pp.72-79	5
Conference	2016	Threshold Voltage Shift of 0.2 μm AlGaN/GaN MISHFET with Fluorinated Gate Dielectric Hokyun Ahn International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
Journal	2016	Non-volatile Organic Ferroelectric Memory Transistors Fabricated using Rigid Polyimide Islands on an Elastomer Substrate Soon-Won Jung Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.4, no.20, pp.4485-4490	28
Journal	2016	Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.16, no.3, pp.2752-2755	14
Journal	2015	High-Performance Amorphous Multilayered ZnO-SnO2 Heterostructure Thin-Film Transistors: Fabrication and Characteristics Su Jae Lee ETRI Journal, v.37, no.6, pp.1135-1142	28
Journal	2015	Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning Cho Sung Haeng IEEE Transactions on Electron Devices, v.62, no.11, pp.3653-3657	37
Journal	2015	DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2 Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657	3
Journal	2015	Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment Park Young Rak Physica Status Solidi (A), v.2112, no.5, pp.1170-1173	11
Journal	2014	Characterization of Amorphous Multilayered ZnO-SnO2 Heterostructure Thin Films and their Field Effect Electronic Properties Su Jae Lee Applied Physics Letters, v.105, no.20, pp.1-4	14
Conference	2014	Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2
Journal	2014	Influence of Gate Dielectric/Channel Interface Engineering on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Cho Sung Haeng Physica Status Solidi (A), v.211, no.9, pp.2126-2133	21
Journal	2014	Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests Jongmin Lee Journal of the Korean Physical Society, v.64, no.10, pp.1446-1450	3
Journal	2014	Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate Hokyun Ahn Solid-State Electronics, v.95, pp.42-45	18
Conference	2014	Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1
Journal	2013	Unusual Instability Mode of Transparent All Oxide Thin Film Transistor under Dynamic Bias Condition Oh Himchan Applied Physics Letters, v.103, no.12, pp.1-5	3
Conference	2013	Effects of Various Field Plates for Normally-Off GaN MISFETs Woojin Chang International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2013, pp.332-333
Journal	2013	Low-Voltage, High Speed Inkjet-Printed Flexible Complementary Polymer Electronic Circuits 백강준 Organic Electronics, v.14, no.5, pp.1407-1418	64
Journal	2013	Light-Exposure Effects on Electrical Characteristics of 6,13-Bis(triisopropylsilylethynyl)Pentacene/CdTe Composite Thin-Film Transistors 박재훈 Japanese Journal of Applied Physics, v.52, no.5 PART 2, pp.1-4	3
Journal	2012	Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits Kang-Jun Baeg ACS Applied Materials & Interfaces, v.4, no.11, pp.6176-6184	82
Journal	2012	Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors 박준용 ACS Applied Materials & Interfaces, v.4, no.10, pp.5369-5374	27
Journal	2012	An Experimental Study of the Effects of Source/Drain to Gate Overlap in Pentacene Thin-Film Transistors Park Jae Hoon Japanese Journal of Applied Physics, v.51, no.9 PART3, pp.1-4	4
Journal	2012	A Low-Power Scan Driver Circuit for Oxide TFTs Jae-Eun Pi IEEE Electron Device Letters, v.33, no.8, pp.1144-1146	26
Conference	2012	Passivation of High Mobility Oxide TFT Park Sang-Hee International Meeting on Information Display (IMID) 2012, pp.1-2
Conference	2012	Oxygen Vacancy Effect for the Illumination Instability of In-Ga-O Transparent Thin Film Transistors Ryu Hojun International Meeting on Information Display (IMID) 2012, pp.1-2
Journal	2012	Size and Surface Modification Effects on the pH Response of Si Nanowire Field-Effect Transistors 백인복 Journal of Nanoscience and Nanotechnology, v.12, no.7, pp.5678-5682	5
Journal	2012	Effect of Curing Temperature on Nano-Silver Paste Ink for Organic Thin-Film Transistors Minseok Kim Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3272-3275	7
Journal	2012	Variation in the Electrical Properties of 100 V/100 a Rated Mesh and Stripe TDMOSFETs (Trench Double-Diffused MOSFETs) for Motor Drive Applications Na Kyoung Il Journal of the Korean Physical Society, v.60, no.10, pp.1508-1512	0
Journal	2012	Effect of In-Ga-Zn-O Active Layer Channel Composition on Process Temperature for Flexible Oxide Thin-film Transistors 박준용 Journal of Vacuum Science and Technology B, v.30, no.4, pp.1-5	20
Conference	2012	Plastic-Based Guest-Host Liquid Crystal Displays Gi Heon Kim International Symposium on Advanced Display Materials and Devices (ADMD) 2012, pp.1-2
Journal	2012	High Performance of Ultralow Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate 박동진 Solid-State Electronics, v.75, pp.97-101	2
Journal	2012	Current Stress Induced Electrical Instability in Transparent Zinc Tin Oxide Thin-Film Transistors Cheong Woo-Seok Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3421-3424	18
Journal	2012	Modeling of Amorphous InGaZnO Thin Film Transistors using an Empirical Mobility Function based on the Exponential Deep and Tail States Jaeheon Shin Thin Solid Films, v.520, no.10, pp.3800-3802	11
Journal	2012	Photo-Assisted Bistable Switching Using Mott Transition in Two-Terminal VO2 Device Seo Giwan Applied Physics Letters, v.100, no.1, pp.1-3	57
Journal	2011	Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs Jun Myungsim Semiconductor Science and Technology, v.26, no.12, pp.1-4	0
Conference	2011	Drain Bias Induced Instability Characteristics in Oxide Thin Film Transistors Yang Shinhyuk International Meeting on Information Display (IMIT) 2011, pp.115-116
Journal	2011	Suppression in the Negative Bias Illumination Instability of Zn-Sn-O Transistor Using Oxygen Plasma Treatment Yang Shinhyuk Applied Physics Letters, v.99, no.10, pp.1-3	86
Journal	2011	Effects of the Composition of Sputtering Target on the Stability of InGaZnO Thin Film Transistor 허준영 Thin Solid Films, v.519, no.20, pp.6868-6871	38
Journal	2011	High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4	1
Journal	2011	Water-Related Abnormal Instability of Transparent Oxide/Organic Hybrid Thin Film Transistors Yang Shinhyuk Applied Physics Letters, v.98, no.10, pp.1-3	30
Journal	2011	Light Response of Top Gate InGaZnO Thin Film Transistor Park Sang-Hee Japanese Journal of Applied Physics, v.50, no.3S, pp.1-4	7
Journal	2011	Transition of Dominant Instability Mechanism Depending on Negative Gate Bias under Illumination in Amorphous In-Ga-Zn-O Thin Film Transistor Oh Himchan Applied Physics Letters, v.98, no.3, pp.1-3	98
Journal	2010	Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application Musarrat Hasan Electrochemical and Solid-State Letters, v.13, no.3, pp.H80-H82	2
Journal	2010	Fabrication of Self-Aligned TFTs with a Ultra-Low Temperature Polycrystalline Silicon Process on Metal Foils Jaehyun Moon Solid-State Electronics, v.54, no.11, pp.1326-1331	2
Journal	2010	P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain Choi Sungjin IEEE Transactions on Electron Devices, v.57, no.8, pp.1737-1742	4
Conference	2010	A 1 V 6-bit 2.4 GS/s Nyquist CMOS DAC for UWB Systems Bong Chan Kim International Microwave Symposium (IMS) 2010, pp.912-915	12
Journal	2009	Channel Protection Layer Effect on the Performance of Oxide TFTs Park Sang-Hee ETRI Journal, v.31, no.6, pp.653-659	77
Journal	2009	Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics 이정민 Applied Physics Letters, v.94, no.22, pp.1-4	109
Journal	2009	Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors Jae Kyeong Jeong Applied Physics Letters, v.95, no.12, pp.123505-1-123505-3	58
Journal	2009	High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach Ryu Min Ki Applied Physics Letters, v.95, no.7, pp.072104-1-072104-3	118
Journal	2009	Ku-band high-power amplifier MMIC with on-chip gate biasing circuit Youn Sub Noh Electronics Letters, v.45, no.15, pp.794-795	4
Journal	2009	Flexible Organic Thin-Film Transistors for Photodetectors 권재홍 Journal of the Korean Physical Society, v.55, no.1, pp.72-75	9
Journal	2009	Ku-Band Power Amplifier MMIC Chipset with On-Chip Active Gate Bias Circuit Youn Sub Noh ETRI Journal, v.31, no.3, pp.247-253	9
Journal	2009	Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications 백강준 Solid-State Electronics, v.53, no.11, pp.1165-1168	23
Journal	2009	Effect of UV/ozone Treatment on Hysteresis of Pentacene Thin-Film Transistor with Polymer Gate Dielectric Koo Jae Bon Solid-State Electronics, v.53, no.6, pp.621-625	39
Journal	2009	Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory 최성진 IEEE Electron Device Letters, v.30, no.1, pp.78-81	20
Journal	2009	Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail State Jaeheon Shin Journal of the Korean Physical Society, v.54, no.1, pp.527-530	24
Conference	2008	Fabrication of High Performance Pentacene TFTs using TX100 in PVP Gate Dielectric Song Kichul International Display Workshops (IDW) 2008, pp.715-716
Conference	2008	Ku-band MMIC Power Amplifier with On-chip Compensation Gate Bias Circuit Youn Sub Noh Asia-Pacific Microwave Conference (APMC) 2008, pp.1-4	2
Journal	2008	Downscaling of Organic Field‐Effect Transistors with a Polyelectrolyte Gate Insulator Lars Herlogsson Advanced Materials, v.20, no.24, pp.4708-4713	140
Journal	2008	Polarity Effects of Polymer Gate Electrets on Non‐Volatile Organic Field‐Effect Transistor Memory Back Gangjoon Advanced Functional Materials, v.18, no.22, pp.3678-3685	264
Journal	2008	Transparent Thin-film Transistors with Zinc Oxide Semiconductor Fabricated by Reactive Sputtering using Metallic Zinc target Cheong Woo-Seok Thin Solid Films, v.516, no.22, pp.8159-5164	12
Journal	2008	Effects of UV/ozone Treatment of a Polymer Dielectric Surface on the Properties of Pentacene Thin Films for Organic Transistors 한승진 Journal of Applied Physics, v.104, no.1, pp.1-4	14
Journal	2008	High-gain and Low-hysteresis Properties of Organic Inverters with an UV-photo Patternable Gate Dielectrics Lim Sangchul Thin Solid Films, v.516, no.12, pp.4330-4333	5
Journal	2008	Molecular Conductance Switch-On of Single Ruthenium Complex Molecules Seo Kyoung Ja Journal of the American Chemical Society, v.130, no.8, pp.2553-2559	109
Journal	2008	Organic Field-effect Transistors with Thermal-cured Polyacrylate Gate Dielectric Films Gi Heon Kim Thin Solid Films, v.516, no.7, pp.1574-1577	4
Journal	2007	Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films Yoon Sung Min Japanese Journal of Applied Physics, v.46, no.11, pp.7225-7231	17
Journal	2007	Photo-assisted Electrical Gating in a Two-terminal Device based on Vanadium Dioxide Thin Film Lee Yong Wook Optics Express, v.15, no.19, pp.12108-12113	35
Journal	2007	Device Characteristics of Pentacene Dual-Gate Organic Thin-Film Transistor Koo Jae Bon Japanese Journal of Applied Physics, v.46, no.8A, pp.5062-5066
Conference	2007	Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel Hyung Sup Yoon International Conference on Indium Phosphide and Related Materials (IPRM) 2007, pp.110-113	0
Journal	2007	Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates Hyung Sup Yoon Journal of the Korean Physical Society, v.50, no.3, pp.889-892	4
Journal	2007	Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition Sun Jin Yun Electrochemical and Solid-State Letters, v.10, no.3, pp.H90-H93	11
Journal	2007	Hysteresis and Threshold Voltage Shift of Pentacene Thin-film Transistors and Inverters with Al2O3 Gate Dielectric Koo Jae Bon Applied Physics Letters, v.90, no.13, pp.1-3	58
Journal	2007	Pentacene Thin-film Transistors and Inverters with Plasma-enhanced Atomic-layer-deposited Al2O3 Gate Dielectric Koo Jae Bon Thin Solid Films, v.515, no.5, pp.3132-3137	26
Journal	2007	Doping Effect of Solution-processed Thin-film Transistors based on Polyfluorene 임은희 Journal of Materials Chemistry, v.17, no.14, pp.1416-1420	68
Journal	2006	Threshold voltage control of pentacene thin‐film transistor with dual‐gate structure Koo Jae Bon Journal of Information Display, v.7, no.3, pp.27-30	7
Journal	2006	Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure Koo Jae Bon Electrochemical and Solid-State Letters, v.9, no.11, pp.G320-G322	9
Conference	2006	Threshold Voltage Control of Pentacene Thin-Film Transistor with Dual-Gate Structure Koo Jae Bon International Meeting on Information Display 2006, pp.1103-1106
Journal	2006	Ni/Au Contact to Silicon Quantum Dot Light-Emitting Diodes for the Enhancement of Carrier Injection and Light Extraction Efficiency 김백현 Applied Physics Letters, v.89, no.6, pp.1-3	41
Journal	2006	Solution-Processable Field-Effect Transistor Using a Fluorene- and Selenophene-Based Copolymer as an Active Layer 김영미 Macromolecules, v.39, no.12, pp.4081-4085	90
Conference	2006	4.3: Transparent ZnO Thin Film Transistor Array for the Application of Transparent AM-OLED Display Park Sang-Hee International Symposium, Seminar and Exhibition (SID) 2006, pp.25-28	43
Journal	2006	Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383	2
Journal	2006	Design and Optical Properties of ZnS: Mn Thin-Film Electroluminescent Devices on 2D SiO2 Corrugated Photonic Crystal Substrates 도영락 Journal of the Electrochemical Society, v.153, no.4, pp.H71-H77	3
Conference	2006	Self-Aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate Jaehyun Moon Materials Research Society (MRS) Meeting 2006 (Spring), pp.1-6
Journal	2006	The Effect of Channel Length on Turn-on Voltage in Pentacene-Based Thin Film Transistor Koo Jae Bon Synthetic Metals, v.156, no.7-8, pp.533-536	25
Journal	2006	The Effects of Surface Treatment on Device Performance in Pentacene-based thin Film Transistor Koo Jae Bon Synthetic Metals, v.156, no.2-4, pp.99-103	38
Journal	2005	DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690	5
Conference	2005	Fabrication of High Performance Low Temperature Poly-Si(LTPS) on Flexible Metal Foil Park Dong Jin International Display Workshops in Conjunction with Asia Display (IDW/AD) 2005, pp.1-4
Journal	2005	Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse Chae Byung Gyu Physica B : Condensed Matter, v.369, no.1-4, pp.76-80	132
Conference	2005	Design of the Multipaction Free High Power Ka-band Diplexer with an E-plane T-junction Yun So-Hyeun Asia-Pacific Conference on Communications (APCC) 2005, pp.582-585	8
Journal	2004	A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC 손원소 ETRI Journal, v.26, no.1, pp.7-12	6
Journal	2002	CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD Jaeheon Shin IEEE Photonics Technology Letters, v.14, no.8, pp.1031-1033	49

특허 검색결과
Status	Year	Patent Name	Country
Registered	2009	The Structure and its Fabrication Methods of Compound Semiconductor Device for Hi gh Power Radio Frequency Control Circuits	UNITED STATES
Registered	2014	POWER MANAGEMENT APPARATUS AND MULTI-SOURCE ENERGY HARVESTING SYSTEM USING THE SAME	UNITED STATES
Registered	2005	TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME	UNITED STATES
Registered	2019	SPIKE NEURAL NETWORK CIRCUIT INCLUDING RADIATION SOURCE	UNITED STATES
Registered	2009	IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR	UNITED STATES
Registered	2009	IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR	UNITED STATES
Registered	2005	METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR	UNITED STATES
Registered	2017	WEARABLE DEVICE AND DATA SECURITY METHOD THEREOF	UNITED STATES
Registered	2006	IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR	UNITED STATES

연구보고서 검색결과
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